Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures (Englisch)
Freier Zugriff
- Neue Suche nach: Dong, Yongqi
- Neue Suche nach: Xu, Haoran
- Neue Suche nach: Luo, Zhenlin
- Neue Suche nach: Zhou, Hua
- Neue Suche nach: Fong, Dillon D.
- Neue Suche nach: Wu, Wenbin
- Neue Suche nach: Gao, Chen
- Neue Suche nach: Dong, Yongqi
- Neue Suche nach: Xu, Haoran
- Neue Suche nach: Luo, Zhenlin
- Neue Suche nach: Zhou, Hua
- Neue Suche nach: Fong, Dillon D.
- Neue Suche nach: Wu, Wenbin
- Neue Suche nach: Gao, Chen
In:
APL Materials
;
5
, 5
;
7
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures
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Weitere Titelangaben:Dong et al.
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Beteiligte:Dong, Yongqi ( Autor:in ) / Xu, Haoran ( Autor:in ) / Luo, Zhenlin ( Autor:in ) / Zhou, Hua ( Autor:in ) / Fong, Dillon D. ( Autor:in ) / Wu, Wenbin ( Autor:in ) / Gao, Chen ( Autor:in )
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Erschienen in:APL Materials ; 5, 5 ; 7
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Verlag:
- Neue Suche nach: AIP Publishing LLC
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Erscheinungsdatum:01.05.2017
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Format / Umfang:7 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 5, Ausgabe 5
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Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructuresDong, Yongqi / Xu, Haoran / Luo, Zhenlin / Zhou, Hua / Fong, Dillon D. / Wu, Wenbin / Gao, Chen et al. | 2017
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