Silicon reaction of TiNx diffusion barriers at high temperatures (Englisch)
- Neue Suche nach: Jiménez, M. C.
- Neue Suche nach: Fernandez, M.
- Neue Suche nach: Albella, J. M.
- Neue Suche nach: Martinez‐Duart, J. M.
- Neue Suche nach: Jiménez, M. C.
- Neue Suche nach: Fernandez, M.
- Neue Suche nach: Albella, J. M.
- Neue Suche nach: Martinez‐Duart, J. M.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
9
, 3
;
1492-1496
;
1991
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Silicon reaction of TiNx diffusion barriers at high temperatures
-
Weitere Titelangaben:Silicon reaction of TiNx diffusion barriers at high temperatures
-
Beteiligte:Jiménez, M. C. ( Autor:in ) / Fernandez, M. ( Autor:in ) / Albella, J. M. ( Autor:in ) / Martinez‐Duart, J. M. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.05.1991
-
Format / Umfang:5 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 9, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1421
-
Comparison of CH4/H2/Ar reactive ion etching and electron cyclotron resonance plasma etching of In‐based III–V alloysPearton, S. J. / Chakrabarti, U. K. / Katz, A. / Perley, A. P. / Hobson, W. S. / Constantine, C. et al. | 1991
- 1433
-
Reactive sputtering of InP in N2 and N2/O2 plasmasSundararaman, C. S. / Lafontaine, H. / Poulin, S. / Mouton, A. / Currie, J. F. et al. | 1991
- 1440
-
Chemically assisted ion beam etching of InP and InSb using reactive flux of iodine and Ar+ beamBharadwaj, L. M. / Bonhomme, P. / Faure, J. / Balossier, G. / Bajpai, R. P. et al. | 1991
- 1445
-
AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etchFullowan, T. R. / Pearton, S. J. / Kopf, K. F. / Smith, P. R. et al. | 1991
- 1449
-
Alkane based plasma etching of GaAsLaw, V. J. / Tewordt, M. / Ingram, S. G. / Jones, G. A. C. et al. | 1991
- 1456
-
Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurementsJoseph, M. / Guimaraes, F. E. G. / Kraus, J. / Tegude, F.‐J. et al. | 1991
- 1461
-
Plasma–surface interactions in fluorocarbon etching of silicon dioxideButterbaugh, J. W. / Gray, D. C. / Sawin, H. H. et al. | 1991
- 1471
-
400 kHz radio‐frequency biased electron cyclotron resonance plasma etching for Al–Si–Cu patterningSamukawa, Seiji / Toyosato, Tomohiko / Wani, Etsuo et al. | 1991
- 1478
-
Response surface modeling of high pressure chemical vapor deposited blanket tungstenClark, Thomas E. / Chang, Mei / Leung, Cissy et al. | 1991
- 1487
-
Influence of silicon concentration and layering of molybdenum silicide on the reliability of Al–Si–Cu interconnectionsSuwa, Motoo / Fukada, Shin‐ichi / Onuki, Jin / Fujii, Yuuji / Yamada, Kouichiro et al. | 1991
- 1492
-
Silicon reaction of TiNx diffusion barriers at high temperaturesJiménez, M. C. / Fernandez, M. / Albella, J. M. / Martinez‐Duart, J. M. et al. | 1991
- 1497
-
Formation of cobalt silicide under a passivating film of molybdenum or tungstenYang, Fann‐Mei / Chen, Mao‐Chieh et al. | 1991
- 1503
-
The reaction of amorphous Co–Zr layers with Si(100) and SiO2 substrates by annealing in vacuum and NH3Duchateau, J. P. W. B. / Kuiper, A. E. T. / Willemsen, M. F. C. / Torrisi, A. / van der Kolk, G. J. et al. | 1991
- 1511
-
Low‐temperature heteroepitaxy of Ge on Si by GeH4 gas low‐pressure chemical vapor depositionFujinaga, Kiyohisa et al. | 1991
- 1517
-
Quantification of the strain in fully relaxed Si/Ge heteroepitaxial films and superlattices via molecular dynamicsSrivastava, D. / Taylor, R. S. / Garrison, B. J. et al. | 1991
- 1524
-
A direct method to produce and measure compositional grading in AlxGa1−xAs alloysSundaram, M. / Wixforth, A. / Geels, R. S. / Gossard, A. C. / English, J. H. et al. | 1991
- 1530
-
Effects of annealing on anodic oxides of GaPKato, Y. / Geib, K. M. / Gann, R. G. / Brusenback, P. R. / Wilmsen, C. W. et al. | 1991
- 1535
-
Adsorption and desorption of sulfur on a GaAs (001) surface by H2S exposure and heat treatmentKawanishi, Hidenori / Sugimoto, Yoshimasa / Akita, Kenzo et al. | 1991
- 1540
-
Improvement of adhesion between Si3N4 thin films and polycarbonate substrates by preparation of an interpenetrating layer using microwave plasma enhanced chemical vapor depositionSatoh, Toshiya / Takahashi, Shigeru et al. | 1991
- 1545
-
Resist development simulation treated as a boundary value problemBergner, K. et al. | 1991
- 1549
-
Specific atom imaging, nanoprocessing, and electrical nanoanalysis with scanning tunneling microscopyKazmerski, Lawrence L. et al. | 1991
- 1557
-
Atmospheric scanning electron microscopy using silicon nitride thin film windowsGreen, E. D. / Kino, G. S. et al. | 1991
- 1559
-
High resolution atomic force microscopy potentiometryWeaver, J. M. R. / Abraham, David W. et al. | 1991
- 1562
-
Semiconductor characterization by scanning force microscope surface photovoltage microscopyWeaver, J. M. R. / Wickramasinghe, H. K. et al. | 1991
- 1566
-
Underwater scanning tunneling microscopy of organic and biological moleculesMou, Jianxun / Sun, Wenjun / Yan, Junjue / Yang, W. S. / Liu, Cheng / Zhai, Zhonghe / Xu, Qiang / Xie, Youchang et al. | 1991
- 1570
-
Studies of nucleation and growth morphology of boron‐doped diamond microcrystals by scanning tunneling microscopyEverson, M. P. / Tamor, M. A. et al. | 1991
- 1577
-
Gold/carbon superfine particles produced in pulsed CO2 laser stimulated plasmasColgate, S. O. / Simon, C. G. / Boggess, S. J. / Moini, M. / D’Agostino, A. T. / Ammons, J. M. et al. | 1991
- 1596
-
Anisotropic etching of polysilicon in a single‐wafer aluminum etch reactorMaa, J.‐S. / Gossenberger, H. / DiGeronimo, F. et al. | 1991
- 1598
-
Multiple submicron‐sized Schottky point contacts interconnected by a submicron‐sized airbridgeSchmidt, P. E. / Kosemura, K. / Okada, M. / Yokoyama, N. et al. | 1991
- 1601
-
WNX–Schottky diodes on semiconductor–insulator–semiconductor‐like n‐GaAs/undoped‐AlGaAs/n‐GaAs heterostructuresSteiner, Klaus / Mikami, Hitoshi / Nishihori, Kazuya / Nagaoka, Masami / Uchitomi, Naotaka et al. | 1991
- 1605
-
A mechanical probe for accurate substrate temperature measurements in molecular beam epitaxyEkenstedt, M. J. / Andersson, T. G. et al. | 1991
- 1613
-
Mercury cadmium telluride and related compounds: The last ten years and the next ten yearsFreeman, Charles F. et al. | 1991
- 1615
-
Diffusion mechanisms in mercury cadmium tellurideStevenson, D. A. / Tang, M‐F. S. et al. | 1991
- 1625
-
Selective annealing for the planar processing of HgCdTe devicesParat, K. K. / Ehsani, H. / Bhat, I. B. / Ghandhi, S. K. et al. | 1991
- 1630
-
The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltellurideKorenstein, R. / Hallock, P. / MacLeod, B. et al. | 1991
- 1634
-
The effect of growth orientation on the morphology, composition, and growth rate of mercury cadmium telluride layers grown by metalorganic vapor phase epitaxyCinader, G. / Raizman, A. / Sher, A. et al. | 1991
- 1639
-
Growth and carrier concentration control of Hg1−xCdxTe heterostructures using isothermal vapor phase epitaxy and vapor phase epitaxy techniquesLee, S. B. / Kim, D. / Stevenson, D. A. et al. | 1991
- 1646
-
Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substratesArias, J. M. / Zandian, M. / Shin, S. H. / McLevige, W. V. / Pasko, J. G. / DeWames, R. E. et al. | 1991
- 1651
-
Molecular‐beam epitaxy of CdTe on large area Si(100)Sporken, R. / Lange, M. D. / Faurie, J. P. / Petruzzello, J. et al. | 1991
- 1656
-
Characterization of CdTe, HgTe, and Hg1−xCdxTe grown by chemical beam epitaxyWagner, B. K. / Rajavel, D. / Benz, R. G. / Summers, C. J. et al. | 1991
- 1661
-
Low‐temperature growth of midwavelength infrared liquid phase epitaxy HgCdTe on sapphireJohnston, S. / Blazejewski, E. R. / Bajaj, J. / Chen, J. S. / Bubulac, L. / Williams, G. et al. | 1991
- 1667
-
A review of impurity behavior in bulk and epitaxial Hg1−xCdxTeCapper, P. et al. | 1991
- 1682
-
Impurities and metalorganic chemical‐vapor deposition growth of mercury cadmium tellurideEaston, B. C. / Maxey, C. D. / Whiffin, P. A. C. / Roberts, J. A. / Gale, I. G. / Grainger, F. / Capper, P. et al. | 1991
- 1687
-
The growth and properties of In‐doped metalorganic vapor phase epitaxy interdiffused multilayer process (HgCd)TeGough, J. S. / Houlton, M. R. / Irvine, S. J. C. / Shaw, N. / Young, M. L. / Astles, M. G. et al. | 1991
- 1691
-
Arsenic doping in metalorganic chemical vapor deposition Hg1−xCdxTe using tertiarybutylarsine and diethylarsineEdwall, D. D. / Chen, J.‐S. / Bubulac, L. O. et al. | 1991
- 1695
-
Dynamics of arsenic diffusion in metalorganic chemical vapor deposition HgCdTe on GaAs/Si substratesBubulac, L. O. / Edwall, D. D. / Viswanathan, C. R. et al. | 1991
- 1705
-
Extrinsic p‐doped HgCdTe grown by direct alloy growth organometallic epitaxyTaskar, N. R. / Bhat, I. B. / Parat, K. K. / Ghandhi, S. K. / Scilla, G. J. et al. | 1991
- 1709
-
Determination of acceptor densities in p‐type Hg1−xCdxTe by thermoelectric measurementsBaars, J. / Brink, D. / Ziegler, J. et al. | 1991
- 1716
-
Mechanisms of incorporation of donor and acceptor dopants in (Hg,Cd)Te alloysVydyanath, H. R. et al. | 1991
- 1724
-
Growth and characterization of P‐on‐n HgCdTe liquid‐phase epitaxy heterojunction material for 11–18 μm applicationsPultz, G. N. / Norton, Peter W. / Krueger, E. Eric / Reine, M. B. et al. | 1991
- 1731
-
Improved breakdown voltage in molecular beam epitaxy HgCdTe heterostructuresKoestner, R. J. / Goodwin, M. W. / Schaake, H. F. et al. | 1991
- 1738
-
Review of the status of computational solid‐state physicsSher, A. / van Schilfgaarde, M. / Berding, M. A. et al. | 1991
- 1740
-
Mercury cadmium telluride junctions grown by liquid phase epitaxyWang, C. C. et al. | 1991
- 1746
-
HgZnTe for very long wavelength infrared applicationsPatten, E. A. / Kalisher, M. H. / Chapman, G. R. / Fulton, J. M. / Huang, C. Y. / Norton, P. R. / Ray, M. / Sen, S. et al. | 1991
- 1752
-
A high quantum efficiency in situ doped mid‐wavelength infrared p‐on‐n homojunction superlattice detector grown by photoassisted molecular‐beam epitaxyHarris, K. A. / Myers, T. H. / Yanka, R. W. / Mohnkern, L. M. / Otsuka, N. et al. | 1991
- 1759
-
Subband spectroscopy and steady‐state measurement of dark current in metal–insulator–semiconductor devicesSchiebel, R. A. et al. | 1991
- 1764
-
Dark current processes in thinned p‐type HgCdTeBlanks, D. K. et al. | 1991
- 1770
-
Properties of Schottky diodes on n‐type Hg1−xCdxTeLeech, Patrick W. / Kibel, Martyn H. et al. | 1991
- 1777
-
Uncooled 10.6 μm mercury manganese telluride photoelectromagnetic infrared detectorsBecla, P. / Grudzien, N. / Piotrowski, J. et al. | 1991
- 1781
-
Novel device concept for silicon based infrared detectorsScott, G. / Mercer, D. E. / Helms, C. R. et al. | 1991
- 1785
-
Characterization of PbTe/p‐Si and SnTe/p‐Si heterostructuresScott, G. / Helms, C. R. et al. | 1991
- 1789
-
Long‐wavelength infrared detection in a photovoltaic‐type superlattice structureO, Byungsung / Choe, J.‐W. / Francombe, M. H. / Bandara, K. M. S. V. / Sorar, E. / Coon, D. D. / Lin, Y. F. / Takei, W. J. et al. | 1991
- 1794
-
High‐efficiency infrared light emitting diodes made in liquid phase epitaxy and molecular beam epitaxy HgCdTe layersBouchut, P. / Destefanis, G. / Chamonal, J. P. / Million, A. / Pelliciari, B. / Piaguet, J. et al. | 1991
- 1799
-
Electrical properties of modulation‐doped HgTe–CdTe superlatticesHwang, S. / Lansari, Y. / Yang, Z. / Cook, J. W. / Schetzina, J. F. et al. | 1991
- 1805
-
Optical and magneto‐optic properties of HgTe/CdTe superlattices in the inverted‐band semiconducting regimeYang, Z. / Yu, Z. / Lansari, Y. / Cook, J. W. / Schetzina, J. F. et al. | 1991
- 1809
-
Magneto‐optical transitions between subbands with different quantum numbers in narrow gap HgTe–CdTe superlatticesLuo, H. / Yang, G. L. / Furdyna, J. K. / Ram‐Mohan, L. R. et al. | 1991
- 1813
-
Shubnikov–de Haas oscillations and quantum Hall effect in modulation‐doped HgTe–CdTe superlatticesHoffman, C. A. / Meyer, J. R. / Arnold, D. J. / Bartoli, F. J. / Lansari, Y. / Cook, J. W. / Schetzina, J. F. et al. | 1991
- 1818
-
Theory for electron and hole transport in HgTe–CdTe superlatticesMeyer, J. R. / Arnold, D. J. / Hoffman, C. A. / Bartoli, F. J. / Ram‐Mohan, L. R. et al. | 1991
- 1823
-
Minority carrier lifetimes of metalorganic chemical vapor deposition long‐wavelength infrared HgCdTe on GaAsZucca, R. / Edwall, D. D. / Chen, J. S. / Johnston, S. L. / Younger, C. R. et al. | 1991
- 1829
-
Trapping effects in HgCdTeNemirovsky, Y. / Fastow, R. / Meyassed, M. / Unikovsky, A. et al. | 1991
- 1840
-
Correlation of HgCdTe epilayer defects with underlying substrate defects by synchrotron x‐ray topographyDean, B. E. / Johnson, C. J. / McDevitt, S. C. / Neugebauer, G. T. / Sepich, J. L. / Dobbyn, R. C. / Kuriyama, M. / Ellsworth, J. / Vydyanath, H. R. / Kennedy, J. J. et al. | 1991
- 1847
-
Photoexcited hot electron relaxation processes in n‐HgCdTe through impact ionization into trapsSeiler, D. G. / Lowney, J. R. / Littler, C. L. / Yoon, I. T. / Loloee, M. R. et al. | 1991
- 1852
-
Dislocation density variations in HgCdTe films grown by dipping liquid phase epitaxy: Effects on metal–insulator–semiconductor propertiesChandra, D. / Tregilgas, J. H. / Goodwin, M. W. et al. | 1991
- 1858
-
Surface energies for molecular beam epitaxy growth of HgTe and CdTeBerding, M. A. / Krishnamurthy, Srinivasan / Sher, A. et al. | 1991
- 1861
-
Structural characterization of the (111) surfaces of CdZnTe and HgCdTe epilayers by x‐ray photoelectron diffractionSeelmann‐Eggebert, M. / Richter, H. J. et al. | 1991
- 1870
-
X‐ray photoelectron diffraction from the HgCdTe(111) surfaceHerman, G. S. / Friedman, D. J. / Tran, T. T. / Fadley, C. S. / Granozzi, G. / Rizzi, G. A. / Osterwalder, J. / Bernardi, S. et al. | 1991
- 1874
-
Electrochemical approaches to cleaning, reconstruction, passivation, and characterization of the HgCdTe surfaceMenezes, S. / McLevige, W. V. / Blazejewski, E. R. / Tennant, W. E. / Ziegler, J. P. et al. | 1991
- 1879
-
Composition, growth mechanism, and stability of anodic fluoride films on Hg1−xCdxTeWeiss, Eliezer / Helms, C. R. et al. | 1991
- 1886
-
Study of temperature dependent structural changes in molecular‐beam epitaxy grown Hg1−xCdxTe by x‐ray lattice parameter measurements and extended x‐ray absorption fine structureDi Marzio, D. / Lee, M. B. / DeCarlo, J. / Gibaud, A. / Heald, S. M. et al. | 1991
- 1892
-
Characterization of CdTe, (Cd,Zn)Te, and Cd(Te,Se) single crystals by transmission electron microscopyRai, R. S. / Mahajan, S. / McDevitt, S. / Johnson, C. J. et al. | 1991
- 1897
-
Optical techniques for composition measurement of bulk and thin‐film Cd1−yZnyTeJohnson, S. M. / Sen, S. / Konkel, W. H. / Kalisher, M. H. et al. | 1991