Self‐defocusing in GaP induced by band‐gap resonant nonlinear refraction (Englisch)
Nationallizenz
- Neue Suche nach: Ji, W.
- Neue Suche nach: Tang, S. H.
- Neue Suche nach: Kukaswadia, A. K.
- Neue Suche nach: Ji, W.
- Neue Suche nach: Tang, S. H.
- Neue Suche nach: Kukaswadia, A. K.
In:
Journal of Applied Physics
;
73
, 12
;
8455-8457
;
1993
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Self‐defocusing in GaP induced by band‐gap resonant nonlinear refraction
-
Beteiligte:
-
Erschienen in:Journal of Applied Physics ; 73, 12 ; 8455-8457
-
Verlag:
- Neue Suche nach: American Institute of Physics
-
Erscheinungsdatum:15.06.1993
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 73, Ausgabe 12
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 8017
-
Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive‐ion etchingKroesen, G. M. W. / Oehrlein, G. S. / Fre´sart, E. de / Haverlag, M. et al. | 1993
- 8027
-
Role of cladding layer thicknesses on strained‐layer InGaAs/GaAs single and multiple quantum well lasersLiu, D. C. / Lee, C. P. / Tsai, C. M. / Lei, T. F. / Tsang, J. S. / Chiang, W. H. / Tu, Y. K. et al. | 1993
- 8035
-
Line shape analysis of higher order nonlinear processes in time‐resolved degenerate four‐wave mixing in GaAsWu, Song et al. | 1993
- 8041
-
Nonlinear optical properties of CdSe quantum dotsPark, S. H. / Casey, Michael P. / Falk, Joel et al. | 1993
- 8046
-
Upconversion dynamics of Er3+:YAIO3Simkin, D.J. et al. | 1993
- 8046
-
Upconversion dynamics of Er3+:YAlO3Simkin, D. J. / Koningstein, J. A. / Myslinski, P. / Boothroyd, S. A. / Chrostowski, J. et al. | 1993
- 8050
-
Studies of photorefractive diffraction dynamic in paraelectric KTa1−xNbxO3 crystalsYe, Peixian / Yang, Changxi / Lian, Yingwu / Wang, Dadi / Guan, Qincai / Wang, Jiyang et al. | 1993
- 8059
-
Short pulse electron beam excitation of the high‐pressure atomic Ne laserShon, Jong W. / Rhoades, Robert L. / Verdeyen, Joseph T. / Kushner, Mark J. et al. | 1993
- 8066
-
Fabrication and optical properties of lead‐germanate glasses and a new class of optical fibers doped with Tm3+Wang, J. / Lincoln, J. R. / Brocklesby, W. S. / Deol, R. S. / Mackechnie, C. J. / Pearson, A. / Tropper, A. C. / Hanna, D. C. / Payne, D. N. et al. | 1993
- 8076
-
Optical Kerr‐effect measurement for a series of alcoholsHarrison, Neil J. / Jennings, Barry R. et al. | 1993
- 8081
-
Spatial coherence measurements and x‐ray holographic imaging using a laser‐generated plasma x‐ray source in the water window spectral regionTurcu, I. C. E. / Ross, I. N. / Schulz, M. S. / Daido, H. / Tallents, G. J. / Krishnan, J. / Dwivedi, L. / Hening, A. et al. | 1993
- 8088
-
Transient heating and melting transformations in argon‐ion laser irradiation of polysilicon filmsXu, Xianfan / Taylor, Scott L. / Park, Hee K. / Grigoropoulos, Costas P. et al. | 1993
- 8097
-
Analysis of a diode with a ferroelectric cathodeSchachter, L. / Ivers, J. D. / Nation, J. A. / Kerslick, G. S. et al. | 1993
- 8111
-
Plasma‐sheath approximate solutions for planar and cylindrical anodes and probesBiblarz, O. / Brown, G. S. et al. | 1993
- 8122
-
Hydrogen‐atom spectroscopy of the ionizing plasma containing molecular hydrogen: Line intensities and ionization rateSawada, Keiji / Eriguchi, Kouji / Fujimoto, Takashi et al. | 1993
- 8126
-
Electron and metastable densities in parallel‐plate radio‐frequency dischargesGreenberg, K. E. / Hebner, G. A. et al. | 1993
- 8134
-
K‐shell x‐ray yield scaling for aluminum x‐pinch plasmasKalantar, D. H. / Hammer, D. A. / Mittal, K. C. / Qi, N. / Young, F. C. / Stephanakis, S. J. / Burkhalter, P. G. / Mehlman, G. / Newman, D. A. et al. | 1993
- 8139
-
A fundamental mode, high‐power, large‐orbit gyrotron using a rectangular interaction regionRadack, D. J. / Ramaswamy, K. / Destler, W. W. / Rodgers, J. et al. | 1993
- 8146
-
Surface cleaning of C‐doped p+ GaAs with hydrogen electron cyclotron resonance plasmaWatanabe, Noriyuki / Nittono, Takumi / Ito, Hiroshi / Kondo, Naoto / Nanishi, Yasushi et al. | 1993
- 8151
-
Temporal evolution of the electron energy distribution function in oxygen and chlorine gases under dc and ac fieldsJiang, Ping / Economou, Demetre J. et al. | 1993
- 8161
-
Lattice position of Si in GaAs determined by x‐ray standing wave measurementsShih, A. / Cowan, P. L. / Southworth, S. / Fotiadis, L. / Hor, C. / Karlin, B. / Moore, F. / Dobisz, E. / Dietrich, H. et al. | 1993
- 8169
-
X‐ray scattering studies of FeSi2 films epitaxially grown on Si(111)Gay, J. M. / Stocker, P. / Re´thore´, F. et al. | 1993
- 8179
-
Optical doping of soda‐lime‐silicate glass with erbium by ion implantationSnoeks, E. / van den Hoven, G. N. / Polman, A. et al. | 1993
- 8184
-
Radiation damage in SiO~2/Sl induced by low-energy electrons via plasmon excitationYunogami, T. / Mizutani, T. et al. | 1993
- 8184
-
Radiation damage in SiO2/Si induced by low‐energy electrons via plasmon excitationYunogami, Takashi / Mizutani, Tatsumi et al. | 1993
- 8189
-
Scanning probe microscopy studies of electromigration in electroplated Au wiresPaniccia, M. / Flinn, P. / Reifenberger, R. et al. | 1993
- 8198
-
Pressure‐induced rocksalt phase of aluminum nitride: A metastable structure at ambient conditionXia, Qing / Xia, Hui / Ruoff, Arthur L. et al. | 1993
- 8201
-
Kinetics of laser‐induced phase transitions in Ni‐Al alloysBostanjoglo, O. / Penschke, V. et al. | 1993
- 8206
-
Penetration profiles for fast grain‐boundary diffusion by the dissociative mechanismMishin, Yu. M. / Herzig, Chr. et al. | 1993
- 8215
-
Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristicsMathiot, D. / Straboni, A. / Andre, E. / Debenest, P. et al. | 1993
- 8221
-
Ion channeling study of Scx(Yb,Er)1−xAs films on GaAs (001)Guivarc’h, A. / Ballini, Y. / Minier, M. / Guenais, B. / Dupas, G. / Ropars, G. / Regreny, A. et al. | 1993
- 8227
-
Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular‐beam epitaxial layersSeong, Tae‐Yeon / Norman, A. G. / Ferguson, I. T. / Booker, G. R. et al. | 1993
- 8237
-
Doping of Si thin films by low‐temperature molecular beam epitaxyGossmann, H.‐J. / Unterwald, F. C. / Luftman, H. S. et al. | 1993
- 8242
-
Pulsed laser deposition of SiC films on fused silica and sapphire substratesRimai, L. / Ager, R. / Hangas, J. / Logothetis, E. M. / Abu‐Ageel, Nayef / Aslam, M. et al. | 1993
- 8250
-
Single‐crystal Si/NiSi2/Si(100) structuresTung, R. T. / Eaglesham, D. J. / Schrey, F. / Sullivan, J. P. et al. | 1993
- 8258
-
Interfacial reactions of ultrahigh vacuum deposited yttrium thin films on (111)Si at low temperaturesLee, T. L. / Chen, L. J. et al. | 1993
- 8267
-
Misfit dislocation distributions in capped (buried) strained semiconductor layersGosling, T. J. / Bullough, R. / Jain, S. C. / Willis, J. R. et al. | 1993
- 8279
-
Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin filmsHayzelden, C. / Batstone, J. L. et al. | 1993
- 8290
-
Incongruent transfer in laser deposition of FeSiGaRu thin filmsvan de Riet, E. / Kools, J. C. S. / Dieleman, J. et al. | 1993
- 8297
-
The energetics of dislocation array stability in strained epitaxial layersGosling, T. J. / Willis, J. R. / Bullough, R. / Jain, S. C. et al. | 1993
- 8304
-
Optimal epilayer thickness for InxGa1-xAs and InyAI1-yAs composition measurement by high-resolution x-ray diffractionBennett, Brian R. et al. | 1993
- 8304
-
Optimal epilayer thickness for InxGa1−xAs and InyAl1−yAs composition measurement by high‐resolution x‐ray diffractionBennett, Brian R. / del Alamo, Jesu´s A. et al. | 1993
- 8309
-
Hindered transformation of Pd2Ge to PdGe in the Pd/a‐Ge:H systemEdelman, F. / Cytermann, C. / Brener, R. / Eizenberg, M. / Weil, R. / Beyer, W. et al. | 1993
- 8313
-
Remote n‐type modulation doping of InAs quantum wells by ‘‘deep acceptors’’ in AlSbShen, Jun / Dow, John D. / Ren, Shang Yuan / Tehrani, Saied / Goronkin, Herb et al. | 1993
- 8319
-
Free‐carrier absorption of nondegenerate semiconductors in quantizing magnetic fields: Nonpolar optical phonon scatteringWu, Chhi‐Chong / Lin, Chau‐Jy et al. | 1993
- 8324
-
Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurementsKim, J. S. / Seiler, D. G. / Tseng, W. F. et al. | 1993
- 8336
-
Nondestructive diagnostic method using ac surface photovoltage for detecting metallic contaminants in silicon wafersShimizu, Hirofumi / Munakata, Chusuke et al. | 1993
- 8340
-
Behavior of InP:Fe under high electric fieldTurki, K. / Picoli, G. / Viallet, J. E. et al. | 1993
- 8349
-
Energy levels of GaSb grown by metalorganic chemical vapor depositionSu, Y. K. / Chen, S. M. et al. | 1993
- 8353
-
Trap‐assisted conduction in nitrided‐oxide and re‐oxidized nitrided‐oxide n‐channel metal‐oxide‐semiconductor field‐effect transistorsFleischer, S. / Lai, P. T. / Cheng, Y. C. et al. | 1993
- 8359
-
Transport measurements in p‐type CdTe single crystals and ion‐beam doped thin filmsMoesslein, Jochen / Lopez‐Otero, Adolfo / Fahrenbruch, Alan L. / Kim, Donghwan / Bube, Richard H. et al. | 1993
- 8359
-
Transport measurements in p-type CdTe single crystals and ion-beam Jochen Moesslein, doped thin filmsLopez-Otero, Adolfo et al. | 1993
- 8364
-
Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/SiXie, Y. H. / Fitzgerald, E. A. / Monroe, D. / Silverman, P. J. / Watson, G. P. et al. | 1993
- 8371
-
Role of initial conductance and gas pressure on the conductance response of single‐crystal SnO2 thin films to H2, O2, and COVetrone, J. / Chung, Y.‐W. / Cavicchi, R. / Semancik, S. et al. | 1993
- 8377
-
Properties of Co‐N, Co‐Fe‐N, and Co‐Zr‐N films prepared by rf sputtering in nitrogen‐argon gas mixturesShih, K. K. / Karasinski, J. et al. | 1993
- 8381
-
ZnTe: A potential interlayer to form low resistance back contacts in CdS/CdTe solar cellsRioux, Dennis / Niles, David W. / Ho¨chst, Hartmut et al. | 1993
- 8386
-
Minority‐carrier recombination kinetics and transport in ‘‘surface‐free’’ GaAs/AlxGa1−xAs double heterostructuresGilliland, G. D. / Wolford, D. J. / Kuech, T. F. / Bradley, J. A. / Hjalmarson, H. P. et al. | 1993
- 8397
-
Optical tuning by angular constraint of the electron gas in a cylindrical quantum wellHuang, Danhong / Gumbs, Godfrey et al. | 1993
- 8397
-
Optical tuning by angular constraint of the electron gas in a cylindricalHuang, Danhong et al. | 1993
- 8402
-
Effect of pressure on the growth of crystallites of low‐pressure chemical‐vapor‐deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin‐film transistorsDimitriadis, C. A. / Stoemenos, J. / Coxon, P. A. / Friligkos, S. / Antonopoulos, J. / Economou, N. A. et al. | 1993
- 8402
-
Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field and thin-film transistorsDimitriadis, C.A. / Stoemenos, J. / Coxon, P.A. / Friligkos, S. / Antonopoulos, J. / Economou, N.A. et al. | 1993
- 8412
-
Enhanced surface/interface recombination and surface inversion of Ni decorated Si/Si(Ge)/Si heterostructuresZhou, T. Q. / Buczkowski, A. / Radzimski, Z. J. / Rozgonyi, G. A. et al. | 1993
- 8419
-
Growth of high‐Tc YBa2Cu3Oy films with an off‐axis sputtering configurationWang, L. M. / Sung, H. H. / Chern, J. H. / Yang, H. C. / Horng, H. E. et al. | 1993
- 8423
-
The influence of oxygen partial pressure and temperature on Bi‐Pb‐Sr‐Ca‐Cu‐O 110 K superconductor phase formation and its stabilityZhu, Wen / Nicholson, Patrick S. et al. | 1993
- 8429
-
Nonrandom gold‐YBa2Cu3O7−x compositesVeretnik, D. / Reich, S. et al. | 1993
- 8436
-
Determination of magnetic anisotropy by transverse susceptibility measurement—an application to NdFeBZimmermann, G. et al. | 1993
- 8441
-
Soft magnetic properties of Co‐Fe‐Al‐N filmsIwasaki, Hitoshi / Akashi, Reiko / Ohsawa, Yuichi et al. | 1993
- 8441
-
Soft magnetic properties of Co-Fe-AI-N filmsIwasaki, Hitoshi et al. | 1993
- 8447
-
Structural chemistry, magnetism and 119Sn Mössbauer spectroscopy of ternary compounds REMn6Sn6 (RE=Pr,Nd,Sm)Weitzer, F. et al. | 1993
- 8447
-
Structural chemistry, magnetism and 119Sn Mo¨ssbauer spectroscopy of ternary compounds REMn6Sn6 (RE=Pr,Nd,Sm)Weitzer, F. / Leithe‐Jasper, A. / Hiebl, K. / Rogl, P. / Qi, Qinian / Coey, J. M. D. et al. | 1993
- 8447
-
Structural chemistry, magnetism and ^1^1^9Sn Moessbauer spectroscopy of ternary compounds REMn~6Sn~6 (RE = Pr,Nd,Sm)Weitzer, F. / Leithe-Jasper, A. / Hiebl, K. / Rogl, P. et al. | 1993
- 8451
-
Relation between the Ω6 intensity parameter of Er3+ ions and the 151Eu isomer shift in oxide glassesTanabe, S. / Ohyagi, T. / Todoroki, S. / Hanada, T. / Soga, N. et al. | 1993
- 8451
-
Relation between the Q6 intensity parameter of Er3+ ions and the 151Eu isomer shift in oxide glassesTanabe, S. et al. | 1993
- 8455
-
Self‐defocusing in GaP induced by band‐gap resonant nonlinear refractionJi, W. / Tang, S. H. / Kukaswadia, A. K. et al. | 1993
- 8458
-
Criteria for Si quantum‐well luminescenceRen, Shang Yuan / Dow, John D. / Shen, Jun et al. | 1993
- 8463
-
Electric‐field‐induced refractive index changes in three‐step asymmetric coupled quantum wellsSusa, Nobuhiko et al. | 1993
- 8471
-
Orientational decay in poled second‐order nonlinear optical guest‐host polymers: Temperature dependence and effects of poling geometrySta¨helin, M. / Walsh, C. A. / Burland, D. M. / Miller, R. D. / Twieg, R. J. / Volksen, W. et al. | 1993
- 8480
-
Determining energy‐band offsets in quantum wells using only spectroscopic dataKoteles, Emil S. et al. | 1993
- 8485
-
Differences in the structure of amorphous hydrogenated silicon‐carbide layers prepared with either methane or silylmethanesFo¨lsch, J. / Ru¨bel, H. / Schade, H. et al. | 1993
- 8489
-
Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structuresZavada, J. M. / Voillot, F. / Lauret, N. / Wilson, R. G. / Theys, B. et al. | 1993
- 8495
-
Photoluminescence of liquid‐phase epitaxial Te‐doped GaSbWu, Meng‐Chyi / Chen, Chi‐Ching et al. | 1993
- 8502
-
Magneto‐optics of excitons in a center Si δ‐doped GaAs/AlGaAs quantum wellRimmer, J. S. / Evans, J. H. / Innes, A. / Hamilton, B. / Missous, M. et al. | 1993
- 8502
-
Magneto-optics of excitons in a center Si d-doped GaAs-AlGaAs quantum wellRimmer, J.S. et al. | 1993
- 8506
-
Characterization of SiC whiskers through infrared‐absorption spectroscopyDiGregorio, J. F. / Furtak, T. E. et al. | 1993
- 8514
-
Optical and compositional studies of SiN thin films with conventional and synchrotron radiation ellipsometryLogothetidis, S. / Petalas, J. / Markwitz, A. / Johnson, R. L. et al. | 1993
- 8519
-
Generation mechanisms of paramagnetic centers by gamma‐ray irradiation at and near the Si/SiO2 interfaceAwazu, Koichi / Watanabe, Kikuo / Kawazoe, Hiroshi et al. | 1993
- 8526
-
Excited‐state absorption in the infrared emission domain of Nd3+‐doped Y3Al5O12, YLiF4, and LaMgAl11O19Guyot, Yannick / Moncorge, Richard et al. | 1993
- 8531
-
Observation of a charge limit for semiconductor photocathodesWoods, M. / Clendenin, J. / Frisch, J. / Kulikov, A. / Saez, P. / Schultz, D. / Turner, J. / Witte, K. / Zolotorev, M. et al. | 1993
- 8536
-
r-x phonon-assisted thermionic currents in the GaAs-AlxGa1-xAs interface systemTammaro, David et al. | 1993
- 8536
-
Γ‐X phonon‐assisted thermionic currents in the GaAs/AlxGa1−xAs interface systemTammaro, David / Hess, Karl / Capasso, Federico et al. | 1993
- 8544
-
Effect of gas‐phase collisions in pulsed‐laser desorption: A three‐dimensional Monte Carlo simulation studySibold, Dieter / Urbassek, Herbert M. et al. | 1993
- 8552
-
Laser ablative hole formation in amorphous thin filmsBlatter, A. / Ortiz, C. et al. | 1993
- 8561
-
Valency and type conversion in CulnSe2 with H2 plasma exposure: A photoemission investigationNelson, Art J. et al. | 1993
- 8561
-
Valency and type conversion in CuInSe2 with H2 plasma exposure: A photoemission investigationNelson, Art J. / Frigo, Sean P. / Rosenberg, Richard et al. | 1993
- 8565
-
Modeling of time‐dependent process changes and hysteresis in Ti‐O2 reactive sputteringKusano, E. et al. | 1993
- 8575
-
Morphology and crystallography of single crystal precipitates on Al alloy films grown by the sputtering methodNiwa, Hideo / Yamaguchi, Ichiro / Yagi, Haruyoshi / Kato, Masaharu et al. | 1993
- 8580
-
Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputteringAdibi, F. / Petrov, I. / Greene, J. E. / Hultman, L. / Sundgren, J.‐E. et al. | 1993
- 8580
-
Effects of high-flux low-energy (20-100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Tio 5Alo 5N alloys grown by ultra-high-vacuum reactive magnetron sputteringAdibi, F. et al. | 1993
- 8580
-
Effects of high-flux low-energy (20-1l00 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti(0.5)Al(0.5)N alloys grown by ultra-high-vacuum reactive magnetron sputteringAdibi, F. / Petrov, I. / Green, J.E. / Hultman, L. / Sundgren, J.E. et al. | 1993
- 8590
-
Growth kinetics of micron‐size nickel lines produced by laser‐assisted decomposition of nickel tetracarbonylBoughaba, S. / Auvert, G. et al. | 1993
- 8601
-
Thermodynamic limits on multigap photovoltaic cells: Design mismatch for a varying meteorological environmentSpirkl, W. / Sizmann, R. et al. | 1993
- 8607
-
Compound‐lens injector for a pulsed 13‐TW electron beamSanford, T. W. L. / Poukey, J. W. / Halbleib, J. A. / Mock, R. C. et al. | 1993
- 8615
-
Characteristics of a GaAs‐InGaAs delta‐doped quantum‐well switchHsu, Wei‐Chou / Guo, Der‐Feng / Liu, Wen‐Chau / Lour, Wen‐Shiung et al. | 1993
- 8615
-
Characteristics of a GaAs-lnGaAs delta-doped quantum-well switchHsu, Wei-Chou et al. | 1993
- 8618
-
Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructuresBelenky, G. L. / Garbinski, P. A. / Luryi, S. / Mastrapasqua, M. / Cho, A. Y. / Hamm, R. A. / Hayes, T. R. / Laskowski, E. J. / Sivco, D. L. / Smith, P. R. et al. | 1993
- 8628
-
Current‐voltage curves for a spatially periodic Ge diodeAbraham‐Shrauner, Barbara / Weeks, William / Zitter, Robert N. et al. | 1993
- 8633
-
Sequential tunneling versus resonant tunneling in a double‐barrier diodeHu, Yuming / Stapleton, Shawn et al. | 1993
- 8637
-
Radiation detection from Fiske steps in Josephson junctions above 200 GHzCirillo, M. / Modena, I. / Santucci, F. / Carelli, P. / Castellano, M. G. / Leoni, R. et al. | 1993
- 8641
-
Wide‐band frequency response measurements of photodetectors using low‐level photocurrent noise detectionXie, Fu Zeng / Kuhl, D. / Bo¨ttcher, E. H. / Ren, S. Y. / Bimberg, D. et al. | 1993
- 8647
-
X‐ray diffraction study of surface acoustic wave device under acoustic excitationZolotoyabko, E. / Jacobsohn, E. / Shechtman, D. / Kantor, B. / Salzman, J. et al. | 1993
- 8650
-
Noise‐free parametric energy multiplication for frequency measurements of an anharmonic mono‐ion oscillatorYu, N. / Dehmelt, H. / Nagourney, W. et al. | 1993
- 8653
-
Interdiffusion of GaAs/Ga1−xInxAs quantum wellsTaylor, W. J. / Kuwata, N. / Yoshida, I. / Katsuyama, T. / Hayashi, H. et al. | 1993
- 8656
-
Effect of electromagnetic radiation on alternating current losses in high‐Tc superconductorsKumar, Binod / Das, Kamal K. et al. | 1993
- 8659
-
Interpretation of the activation energy derived from a stretched‐exponential description of defect density kinetics in hydrogenated amorphous siliconBenatar, Lisa E. / Redfield, David / Bube, Richard H. et al. | 1993
- 8662
-
An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substratesGuha, S. / Madhukar, A. et al. | 1993
- 8665
-
SUMMARY OF THE PACS| 1993
- 8666
-
SUBJECT HEADINGS USED IN VOLUME 73| 1993
- 8671
-
SUBJECT INDEX TO VOLUME 73| 1993
- 8770
-
AUTHOR INDEX TO VOLUME 73| 1993
- R1
-
Frequency control of semiconductor lasersOhtsu, M. / Nakagawa, K. / Kourogi, M. / Wang, W. et al. | 1993