GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding (Englisch)
Nationallizenz
- Neue Suche nach: Radu, I.
- Neue Suche nach: Szafraniak, I.
- Neue Suche nach: Scholz, R.
- Neue Suche nach: Alexe, M.
- Neue Suche nach: Go¨sele, U.
- Neue Suche nach: Radu, I.
- Neue Suche nach: Szafraniak, I.
- Neue Suche nach: Scholz, R.
- Neue Suche nach: Alexe, M.
- Neue Suche nach: Go¨sele, U.
In:
Journal of Applied Physics
;
94
, 12
;
7820-7825
;
2003
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding
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Beteiligte:Radu, I. ( Autor:in ) / Szafraniak, I. ( Autor:in ) / Scholz, R. ( Autor:in ) / Alexe, M. ( Autor:in ) / Go¨sele, U. ( Autor:in )
-
Erschienen in:Journal of Applied Physics ; 94, 12 ; 7820-7825
-
Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:15.12.2003
-
ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 94, Ausgabe 12
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