High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD (Englisch)
Freier Zugriff
- Neue Suche nach: Gogova, D.
- Neue Suche nach: Tran, D. Q.
- Neue Suche nach: Stanishev, V.
- Neue Suche nach: Jokubavicius, V.
- Neue Suche nach: Vines, L.
- Neue Suche nach: Schubert, M.
- Neue Suche nach: Yakimova, R.
- Neue Suche nach: Paskov, P. P.
- Neue Suche nach: Darakchieva, V.
- Neue Suche nach: Gogova, D.
- Neue Suche nach: Tran, D. Q.
- Neue Suche nach: Stanishev, V.
- Neue Suche nach: Jokubavicius, V.
- Neue Suche nach: Vines, L.
- Neue Suche nach: Schubert, M.
- Neue Suche nach: Yakimova, R.
- Neue Suche nach: Paskov, P. P.
- Neue Suche nach: Darakchieva, V.
In:
Journal of Vacuum Science & Technology A
;
42
, 2
;
9
;
2024
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
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Beteiligte:Gogova, D. ( Autor:in ) / Tran, D. Q. ( Autor:in ) / Stanishev, V. ( Autor:in ) / Jokubavicius, V. ( Autor:in ) / Vines, L. ( Autor:in ) / Schubert, M. ( Autor:in ) / Yakimova, R. ( Autor:in ) / Paskov, P. P. ( Autor:in ) / Darakchieva, V. ( Autor:in )
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Erschienen in:Journal of Vacuum Science & Technology A ; 42, 2 ; 9
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.03.2024
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Format / Umfang:9 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 42, Ausgabe 2
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