Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP (Englisch)
- Neue Suche nach: Ahadi, Kaveh
- Neue Suche nach: Cadien, Ken
- Neue Suche nach: Ahadi, Kaveh
- Neue Suche nach: Cadien, Ken
In:
Journal of Vacuum Science & Technology A
;
39
, 3
;
8
;
2021
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP
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Beteiligte:Ahadi, Kaveh ( Autor:in ) / Cadien, Ken ( Autor:in )
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Erschienen in:Journal of Vacuum Science & Technology A ; 39, 3 ; 8
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.05.2021
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Format / Umfang:8 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 39, Ausgabe 3
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