Determination of the very low‐frequency characteristics of dielectric materials: A surface potential approach (Englisch)
Nationallizenz
- Neue Suche nach: Pouille`s, V.
- Neue Suche nach: Lebey, T.
- Neue Suche nach: Castelan, P.
- Neue Suche nach: Pouille`s, V.
- Neue Suche nach: Lebey, T.
- Neue Suche nach: Castelan, P.
In:
Journal of Applied Physics
;
79
, 11
;
8620-8628
;
1996
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Determination of the very low‐frequency characteristics of dielectric materials: A surface potential approach
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Beteiligte:
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Erschienen in:Journal of Applied Physics ; 79, 11 ; 8620-8628
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:01.06.1996
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 79, Ausgabe 11
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Active microlevers as miniature torque magnetometersRossel, C. / Bauer, P. / Zech, D. / Hofer, J. / Willemin, M. / Keller, H. et al. | 1996
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Anomalous broadening of energy distributions in photoemitted electron beamsGuidi, Vincenzo et al. | 1996
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Novel type‐II quantum cascade lasersYang, Rui Q. / Pei, S. S. et al. | 1996
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Langmuir probe measurements of discharge parameters in a Cs–Ba tacitronLuke, James R. / El‐Genk, Mohamed S. et al. | 1996
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Optimization of x‐ray sources for proximity lithography produced by a high average power Nd:glass laserCelliers, P. / Da Silva, L. B. / Dane, C. B. / Mrowka, S. / Norton, M. / Harder, J. / Hackel, L. / Matthews, D. L. / Fiedorowicz, H. / Bartnik, A. et al. | 1996
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Evolution of shallow donors with proton fluence in n‐type siliconNtsoenzok, E. / Desgardin, P. / Saillard, M. / Vernois, J. / Barbot, J. F. et al. | 1996
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Damage in ion implanted silicon measured by x‐ray diffractionMilita, S. / Servidori, M. et al. | 1996
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The effects of flux, fluence and temperature on amorphization in ion implanted semiconductorsCarter, G. et al. | 1996
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Spectral hole burning and uniaxial stress study of radiation‐induced defects in diamondOsvet, A. / Palm, V. / Sildos, I. et al. | 1996
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Fractal analysis of atomic force microscopy pictures of slip lines on a GaAs/GaAlAs heterostructure plastically deformed to obtain quantum wiresRessier, L. / Voillot, F. / Goiran, M. / Peyrade, J. P. / Vieu, C. et al. | 1996
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Significant densification of sol‐gel derived amorphous silica films by vacuum ultraviolet irradiationImai, Hiroaki / Yasumori, Masaru / Hirashima, Hiroshi / Awazu, Koichi / Onuki, Hideo et al. | 1996
- 8310
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Spall fracture properties of aluminum and magnesium at high temperaturesKanel, G. I. / Razorenov, S. V. / Bogatch, A. / Utkin, A. V. / Fortov, V. E. / Grady, D. E. et al. | 1996
- 8318
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Phonon density of states of nanocrystalline Fe prepared by high‐energy ball millingFultz, B. / Robertson, J. L. / Stephens, T. A. / Nagel, L. J. / Spooner, S. et al. | 1996
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An improved method, based on Whipple’s exact solution, for obtaining accurate grain‐boundary diffusion coefficients from shallow solute concentration gradientsChung, Yong‐Chae / Wuensch, Bernhardt J. et al. | 1996
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-
Effect of post‐pattern annealing on the grain structure and reliability of Al‐based interconnectsKang, S. H. / Kim, C. / Morris, J. W. / Ge´nin, F. Y. et al. | 1996
- 8336
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The thermal conductivity of polycrystalline diamond films: Effects of isotope contentBelay, Kalayu / Etzel, Zongyin / Onn, David G. / Anthony, T. R. et al. | 1996
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Short and long annealing of high‐dose arsenic‐implanted pseudomorphic GexSi1−x on Si(100)Lie, D. Y. C. / Im, S. / Nicolet, M.‐A. / Theodore, N. D. et al. | 1996
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Laser‐induced crystallization phenomena in GeTe‐based alloys. III. GeTeSe alloys for a CD compatible erasable diskJongenelis, A. P. J. M. / Coombs, J. H. / van Es‐Spiekman, W. / Jacobs, B. A. J. et al. | 1996
- 8357
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Crystallization of germanium–antimony–tellurium amorphous thin film sandwiched between various dielectric protective filmsOhshima, Norikazu et al. | 1996
- 8364
-
Curvature of multilayer epitaxial filmsMarcus, P. M. et al. | 1996
- 8367
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Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substratesChyi, J.‐I. / Shieh, J.‐L. / Pan, J.‐W. / Lin, R.‐M. et al. | 1996
- 8371
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Anisotropic strain relaxation of GaInP epitaxial layers in compression and tensionMatragrano, M. J. / Ast, D. G. / Shealy, J. R. / Krishnamoorthy, V. et al. | 1996
- 8379
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Interface properties of (In,Ga)Sb/InAs heterostructuresZborowski, J. T. / Vigliante, A. / Moss, S. C. / Golding, T. D. et al. | 1996
- 8384
-
Interaction of dopants with a host GaAs lattice: The case of low‐temperature grown molecular beam epitaxial GaAs(Si)O’Hagan, S. P. / Missous, M. / Mottram, A. / Wright, A. C. et al. | 1996
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Small mesas and holes in split‐gate quantum wires acting as ‘‘artificial impurities’’ fabricated with scanning tunneling microscopeYamada, Syoji / Yamamoto, Masafumi et al. | 1996
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First‐principles calculation of the hexagonal‐closed‐packed Ni75Ta25 metastable phaseHuang, X. Y. / Pan, J. S. / Fan, Y. D. et al. | 1996
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A method of investigating well width fluctuations in diluted magnetic semiconductor superlattices using spin-flip Raman spectroscopyRoberts, R.G. et al. | 1996
- 8406
-
Elastic scattering calculations for electrons and positrons in solid targetsDapor, Maurizio et al. | 1996
- 8412
-
Low‐temperature transport properties of the filled and unfilled IrSb3 skutterudite systemTritt, Terry M. / Nolas, G. S. / Slack, G. A. / Ehrlich, A. C. / Gillespie, D. J. / Cohn, Josh L. et al. | 1996
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Preparation and thermoelectric properties of the skutterudite‐related phase Ru0.5Pd0.5Sb3Caillat, T. / Kulleck, J. / Borshchevsky, A. / Fleurial, J.‐P. et al. | 1996
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- 8435
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Quasineutrality in semiconductorsin ’t Hout, S. R. et al. | 1996
- 8445
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Electrical activation and local structure of Se atoms in ion‐implanted indium phosphideYu, Kin Man / Chan, Ning / Hsu, Leonardo et al. | 1996
- 8451
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The effect of linear and non‐linear diffusion on exciton energies in quantum wellsHarrison, P. / Hagston, W. E. et al. | 1996
- 8456
-
Strain and quantum confinement energies in n‐type modulation‐doped lattice‐mismatched InAsP quantum‐well wiresHammersberg, J. / Notomi, M. / Weman, H. / Lundstro¨m, T. / Potemski, M. / Sugiura, H. / Okamoto, M. / Tamamura, T. et al. | 1996
- 8465
-
Low‐temperature mobility of two‐dimensional electrons in (Ga,In)As–(Al,In)As heterojunctionsGreally, M. G. / Hayne, M. / Usher, A. / Hill, G. / Hopkinson, M. et al. | 1996
- 8470
-
Characterization of semiconductor heterojunctions using internal photoemissionChen, Ing‐Shin / Jackson, T. N. / Wronski, C. R. et al. | 1996
- 8475
-
Subband mixing in resonant magnetotunneling through double‐barrier semiconductor nanostructuresFarinas, Paulo F. / Marques, Gilmar E. / Studart, Nelson et al. | 1996
- 8482
-
Study of subband electronic structure of Si d-doped GaAs using magnetotransport measurements in tilted magnetic fieldsLi, G. et al. | 1996
- 8482
-
Study of subband electronic structure of Si δ‐doped GaAs using magnetotransport measurements in tilted magnetic fieldsLi, G. / Hauser, N. / Jagadish, C. / Antoszewski, J. / Xu, W. et al. | 1996
- 8488
-
Temperature‐dependent transport properties of n+ GaAs/low‐temperature GaAs/n+ GaAs structures grown by molecular beam epitaxyChen, Jenn‐Fang / Chen, Nie‐Chuan / Chiu, Shih‐Yang / Wang, Pie‐yong / Lee, Wei‐I / Chin, Albert et al. | 1996
- 8493
-
Electrical characterization of n‐amorphous/p‐crystalline silicon heterojunctionsMarsal, L. F. / Pallare`s, J. / Correig, X. / Calderer, J. / Alcubilla, R. et al. | 1996
- 8498
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Effects of high temperature rapid thermal annealing using a flat gas flame on the electrical properties of phosphorus‐doped polycrystalline silicon filmsQu, W. F. / Masaki, Y. / Kitagawa, A. / Suzuki, M. et al. | 1996
- 8503
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Effects of gas ratio on electrical properties of electron‐cyclotron‐resonance nitride films grown at room temperatureChang, Kow‐Ming / Tsai, Jung‐Yu / Li, Chii‐Horng / Yeh, Ta‐Hsun / Wang, Shih‐Wei / Yang, Ji‐Yi et al. | 1996
- 8507
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Interface traps in jet‐vapor‐deposited silicon nitride–silicon capacitorsMallik, A. / Wang, X. W. / Ma, T. P. / Cui, G. J. / Tamagawa, T. / Halpern, B. L. / Schmitt, J. J. et al. | 1996
- 8512
-
Conducting properties of polyaniline blendsPinto, N. J. / Torres, C. M. / Kahol, P. K. / McCormick, B. J. et al. | 1996
- 8516
-
Adjustment of temperature coefficient of resistance in NiCr/CuNi(Mn)/NiCr filmsBru¨ckner, W. / Baunack, St. / Elefant, D. / Reiss, G. et al. | 1996
- 8521
-
Optical and electrical investigations of indium oxide thin films prepared by thermal oxidation of indium thin filmsDas, V. Damodara / Kirupavathy, Shahil / Damodare, Laxmikant / Lakshminarayan, N. et al. | 1996
- 8531
-
Roughness effect on heterojunction photovoltaicsPalasantzas, G. / Koumanakos, E. et al. | 1996
- 8537
-
Band‐gap engineering in CdS/Cu(In,Ga)Se2 solar cellsTopicˇ, Marko / Smole, Franc / Furlan, Jozˇe et al. | 1996
- 8541
-
Low Schottky barrier height contacts to n‐CdTe using rare‐earth metalsCunff, D. Brun‐Le / Daudin, B. et al. | 1996
- 8549
-
Surface photovoltage spectroscopy of thin filmsLeibovitch, M. / Kronik, L. / Fefer, E. / Burstein, L. / Korobov, V. / Shapira, Yoram et al. | 1996
- 8557
-
Surface filamentation in semi‐insulating siliconGradinaru, G. / Sudarshan, T. S. et al. | 1996
- 8565
-
‘‘Concerted’’ regeneration of electroformed metal‐insulator‐metal devicesSharpe, R. G. / Palmer, R. E. et al. | 1996
- 8571
-
Magnetic flux penetration process in two‐dimensional superconductor covered with ferromagnetic particle arrayNozaki, Yukio / Otani, Yoshichika / Runge, Katharina / Miyajima, Hideki / Pannetier, Bernard / Nozie`res, Jean Pierre / Fillion, Gerard et al. | 1996
- 8578
-
Magnetic force microscopy of domain wall fine structures in iron filmsSchneider, M. / Mu¨ller‐Pfeiffer, St. / Zinn, W. et al. | 1996
- 8584
-
Magnetization of nanocrystalline dysprosium: Annealing effectsMulyukov, Kh. Ya. / Korznikova, G. F. / Nikitin, S. A. et al. | 1996
- 8588
-
Anisotropy of permeability at 10 Oe in textured soft magnetic materialsBirsan, M. / Szpunar, J. A. et al. | 1996
- 8593
-
The magnetoresistance and microstructure of Fe–xCr–10Co alloy thin filmsChang, H. C. / Chang, Y. H. / Ger, C. H. / Yao, S. Y. et al. | 1996
- 8598
-
Correlation between giant magnetoresistance and the antiferromagnetic volume fraction in superlatticesTakahashi, Y. / Inomata, K. et al. | 1996
- 8603
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The trade‐off between large magnetoresistance and small coercivity in symmetric spin valvesEgelhoff, W. F. / Chen, P. J. / Powell, C. J. / Stiles, M. D. / McMichael, R. D. / Lin, C.‐L. / Sivertsen, J. M. / Judy, J. H. / Takano, K. / Berkowitz, A. E. et al. | 1996
- 8607
-
Locally resolved photothermally modulated ferromagnetic resonance investigation of magnetic anisotropies in a (001) Fe wedge filmMeckenstock, R. / Harms, K. / von Geisau, O. / Pelzl, J. et al. | 1996
- 8612
-
Weak ferromagnetic resonance of Gd2CuO4 small particlesMira, J. / Rivas, J. / Butera, A. / Tovar, M. / Va´zquez Va´zquez, C. / Mahi´a, J. / Lo´pez‐Quintela, M. A. / Oseroff, S. B. et al. | 1996
- 8615
-
Investigation of glassy behavior of lead magnesium niobate relaxorsCheng, Zong‐Yang / Zhang, Liang‐Ying / Yao, Xi et al. | 1996
- 8620
-
Determination of the very low‐frequency characteristics of dielectric materials: A surface potential approachPouille`s, V. / Lebey, T. / Castelan, P. et al. | 1996
- 8629
-
Energy handling capability of ZnO varistorsBartkowiak, M. / Comber, M. G. / Mahan, G. D. et al. | 1996
- 8634
-
Vertical drift of P–E hysteresis loop in asymmetric ferroelectric capacitorsZheng, Lirong / Lin, Chenglu / Xu, W.‐Ping / Okuyama, Masanori et al. | 1996
- 8638
-
Correlation of photon emission with electric‐field‐initiated nanometer‐scale surface modificationStrozewski, K. J. / McBride, S. E. / Wetsel, G. C. et al. | 1996
- 8643
-
Optical properties of boron carbide (B5C) thin films fabricated by plasma‐enhanced chemical‐vapor depositionAhmad, Ahmad A. / Ianno, N. J. / Snyder, P. G. / Welipitiya, D. / Byun, D. / Dowben, P. A. et al. | 1996
- 8648
-
Two‐photon absorption and photoconductivity in photosensitive glassesWeitzman, Peter S. / O¨sterberg, Ulf et al. | 1996
- 8656
-
Optical absorption in alloys of Si, Ge, C, and SnOrner, B. A. / Hits, D. / Kolodzey, J. / Guarin, F. J. / Powell, A. R. / Iyer, S. S. et al. | 1996
- 8660
-
Effect of different preparation conditions on light emission from silicon implanted SiO2 layersGhislotti, G. / Nielsen, B. / Asoka‐Kumar, P. / Lynn, K. G. / Gambhir, A. / Di Mauro, L. F. / Bottani, C. E. et al. | 1996
- 8664
-
Resonant Raman scattering and photoluminescence studies of porous silicon membranesGuha, Soumyendu / Steiner, Peter / Lang, Walter et al. | 1996
- 8669
-
Optical and structural properties of spontaneously formed long‐range compositional modulation in (111)A and (111)B AlGaAsChin, Albert / Lin, B. C. / Gu, G. L. / Hsieh, K. Y. et al. | 1996
- 8675
-
Optical properties of ultrathin GaAs/AlAs quantum well structures with an electric fieldErdog˘an, M. U. / Sankaran, V. / Kim, K. W. / Stroscio, M. A. / Iafrate, G. J. et al. | 1996
- 8682
-
Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge regionHogg, R. A. / Takahei, K. / Taguchi, A. et al. | 1996
- 8688
-
Luminescence and deep‐level characteristics of GaAs/Si with atomic layer epitaxy grown predeposition layersMazumdar, Mousumi / Dhar, S. / Das, Utpal et al. | 1996
- 8693
-
Cathodoluminescence study of the spatial distribution of electron‐hole pairs generated by an electron beam in Al0.4Ga0.6AsBonard, Jean‐Marc / Ganie`re, Jean‐Daniel / Akamatsu, Brigitte / Arau´jo, Daniel / Reinhart, Franz‐Karl et al. | 1996
- 8704
-
Influence of the negative thermal‐expansion coefficient on the luminescence properties of (CdMnMg)TeSchenk, H. / Wolf, M. / Mackh, G. / Zehnder, U. / Ossau, W. / Waag, A. / Landwehr, G. et al. | 1996
- 8712
-
Influence of radiation interference on the shape of Raman spectra for amorphous hydrogen‐free diamondlike carbon filmsKhriachtchev, L. Yu. / Ra¨sa¨nen, M. / Lappalainen, R. et al. | 1996
- 8717
-
Effect of an interlayer on the emission characteristics of a white‐light‐emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layerLee, Y. H. / Ju, B. K. / Song, M. H. / Hahn, T. S. / Oh, M. H. / Kim, D. H. et al. | 1996
- 8725
-
Hydrodynamic instabilities in laser pulse‐produced melts of metal filmsBostanjoglo, O. / Nink, T. et al. | 1996
- 8730
-
Ultraviolet and electron radiation induced fragmentation of adsorbed ferroceneWelipitiya, Dulip / Green, A. / Woods, J. P. / Dowben, P. A. / Robertson, Brian W. / Byun, Dongjin / Zhang, Jiandi et al. | 1996
- 8735
-
Radical and film growth kinetics in methane radio‐frequency glow dischargesDagel, D. J. / Mallouris, C. M. / Doyle, J. R. et al. | 1996
- 8748
-
Amorphous and microcrystalline silicon films deposited by hot‐wire chemical vapor deposition at filament temperatures between 1500 and 1900 °CBrogueira, P. / Conde, J. P. / Arekat, S. / Chu, V. et al. | 1996
- 8748
-
Amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition at filament temperatures between 1500 and 1900 (degree)CBrogueira, P. et al. | 1996
- 8761
-
Growth and characterization of anodic oxides on Si(100) formed in 0.1 hydrochloric acidBardwell, M.J.A. et al. | 1996
- 8761
-
Growth and characterization of anodic oxides on Si(100) formed in 0.1 M hydrochloric acidBardwell, J. A. / Draper, N. / Schmuki, P. et al. | 1996
- 8770
-
Equilibrium fluid configurations in low gravitySasges, M. R. / Ward, C. A. / Azuma, H. / Yoshihara, S. et al. | 1996
- 8783
-
The influence of ambient magnetic environments on high‐Tc superconducting quantum interference device gradiometersKeene, M. N. / Exon, N. J. / Humphreys, R. G. / Chew, N. G. et al. | 1996
- 8792
-
Comparison of quantum well and single heterojunction structures for acoustic charge transfer devicesHayden, R. K. / Woods, R. C. / Kumagai, S. / Yamanouchi, K. / Grey, R. et al. | 1996
- 8798
-
Tunable infrared detector with epitaxial silicide/silicon heterostructuresSchwarz, C. / von Ka¨nel, H. et al. | 1996
- 8808
-
Effect of layered structures on the location of emissive regions in organic electroluminescent devicesAminaka, Ei‐ichiro / Tsutsui, Tetsuo / Saito, Shogo et al. | 1996
- 8816
-
Effects of doping dyes on the electroluminescent characteristics of multilayer organic light‐emitting diodesSuzuki, Hiroyuki / Hoshino, Satoshi et al. | 1996
- 8823
-
The influence of Thomson effect on the maximum power output and maximum efficiency of a thermoelectric generatorChen, Jincan / Yan, Zijun / Wu, Liqing et al. | 1996
- 8829
-
Mode reduction, Q loss, gain saturation, and bandfilling modification of the light versus current characteristics of thin (asymptotically equal to 0.9 m) quantum well heterostructure lasersEvans, P. W. / Holonyak, N. / Ries, M. J. / Chen, E. I. / Minervini, A. D. et al. | 1996
- 8829
-
Mode reduction, Q loss, gain saturation, and bandfilling modification of the light versus current characteristics of thin (∼0.9 μm) quantum well heterostructure lasersEvans, P. W. / Holonyak, N. / Ries, M. J. / Chen, E. I. / Minervini, A. D. et al. | 1996
- 8829
-
Mode reduction, Q loss, gain saturation, and bandfilling modification of the light versus current characteristics of thin (about 0.9 micron) quantum well heterostructure lasersEvans, P.W. / Holonyak, N. jun. / Ries, M.J. / Chen, E.I. / Minervini, A.D. et al. | 1996
- 8829
-
Mode reduction, a loss, gain saturation, and bandfilling modification of the light versus current characteristics of thin (~0.9 mm) quantum well heterostructure lasersEvans, P.W. et al. | 1996
- 8832
-
Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thicknessYi, H. J. / Diaz, J. / Eliashevich, I. / Lukas, G. / Kim, S. / Wu, D. / Erdthmann, M. / Jelen, C. / Slivken, S. / Wang, L. J. et al. | 1996
- 8832
-
Comparison of gain and threshold current density for InGaAsP/GaAs (lambda=808 nm) lasers with different quantum well thicknessYi, H. J. / Diaz, J. / Eliashevich, I. / Lukas, G. / Kim, S. / Wu, D. / Erdthmann, M. / Jelen, C. / Slivken, S. / Wang, L. J. et al. | 1996
- 8832
-
Comparison of gain and threshold current density for InGaAsP-GaAs (lYi, H.J. et al. | 1996
- 8835
-
Growth and photorefractive properties of Mn‐doped (KNa)0.1(Sr0.6Ba0.4)0.9Nb2O6 crystalsZhang, Y. L. / Xie, X. S. / Mo, D. / Pun, E. Y. B. / Shi, L. P. et al. | 1996
- 8838
-
Calculation of the wave‐vector‐dependent interband impact‐ionization transition rate in wurtzite and zinc‐blende phases of bulk GaNKolnik, Jan / Oguzman, Ismail H. / Brennan, Kevin F. / Wang, R. / Ruden, P. Paul et al. | 1996
- 8841
-
Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrateLau, W. S. / Khaw, K. K. / Qian, P. W. / Sandler, N. P. / Chu, P. K. et al. | 1996
- 8844
-
Cross‐barrier recombination in a GaAs/AlGaAs double‐barrier resonant tunneling structureCockburn, J. W. / Buckle, P. D. / Skolnick, M. S. / Birkett, M. J. / Teissier, R. / Smith, G. W. et al. | 1996
- 8847
-
Polygonization of directionally solidified high critical current YBa2Cu3O6+xSandiumenge, F. / Vilalta, N. / Obradors, X. / Pin˜ol, S. / Bassas, J. / Maniette, Y. et al. | 1996
- 8850
-
An experimental investigation on the effective magnetic anisotropy of nanocrystalline Fe89Zr7B4 soft magnetic alloysZhou, F. / He, K. Y. et al. | 1996
- 8853
-
Resonant Raman scattering study of InSb etched by reactive ion beam etchingSendra, J. R. / Armelles, G. / Utzmeier, T. / Anguita, J. / Briones, F. et al. | 1996
- 8856
-
Plasma deposition of amorphous SiC:H,F alloys from SiF4‐CH4‐H2 mixtures under modulated conditionsCicala, G. / Capezzuto, P. / Bruno, G. / Schiavulli, L. / Amato, G. et al. | 1996
- 8859
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CUMULATIVE AUTHOR INDEX| 1996
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EDITORIAL| 1996