Raman scattering studies on Si-doped GaAs grown by hydrogen-assisted molecular beam epitaxy (Englisch)
Nationallizenz
- Neue Suche nach: Zhang, J. M.
- Neue Suche nach: Cardona, M.
- Neue Suche nach: Peng, Z. L.
- Neue Suche nach: Horikoshi, Y.
- Neue Suche nach: Zhang, J. M.
- Neue Suche nach: Cardona, M.
- Neue Suche nach: Peng, Z. L.
- Neue Suche nach: Horikoshi, Y.
In:
Applied Physics Letters
;
71
, 13
;
1813-1815
;
1997
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Raman scattering studies on Si-doped GaAs grown by hydrogen-assisted molecular beam epitaxy
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Beteiligte:Zhang, J. M. ( Autor:in ) / Cardona, M. ( Autor:in ) / Peng, Z. L. ( Autor:in ) / Horikoshi, Y. ( Autor:in )
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Erschienen in:Applied Physics Letters ; 71, 13 ; 1813-1815
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:29.09.1997
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 71, Ausgabe 13
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CUMULATIVE AUTHOR INDEX| 1997