Variable‐shaped EB sub‐half‐micron lithography applied to high‐power GaAs FET’s (Englisch)
- Neue Suche nach: Suzuki, K.
- Neue Suche nach: Itoh, H.
- Neue Suche nach: Sugiura, T.
- Neue Suche nach: Suzuki, K.
- Neue Suche nach: Itoh, H.
- Neue Suche nach: Sugiura, T.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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3
, 1
;
290-294
;
1985
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Variable‐shaped EB sub‐half‐micron lithography applied to high‐power GaAs FET’s
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Weitere Titelangaben:Variable‐shaped EB sub‐half‐micron lithography
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.01.1985
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:FABRICATION , LITHOGRAPHY , ELECTRON BEAMS , GALLIUM ARSENIDES , SILICA , PMMA , GATES , BREAKDOWN , ELECTRIC POTENTIAL , DISTORTION , MICROWAVE RADIATION , ELECTRODES , POWER , GAIN , EFFICIENCY
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Datenquelle:
Inhaltsverzeichnis – Band 3, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 9
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Etch products from the reaction on Cl2 with Al(100) and Cu(100) and XeF2 with W(111) and NbWinters, Harold F. et al. | 1985
- 16
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Pattern profile control of polysilicon plasma etchingKimizuka, M. / Hirata, K. et al. | 1985
- 20
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Josephson current deviation in small area junctions with double insulating layersNishino, Toshikazu / Tarutani, Yoshinobu / Kawabe, Ushio et al. | 1985
- 25
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Single‐step lift‐off process using chlorobenzene soak on AZ4000 resistsFathimulla, A. et al. | 1985
- 41
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A focused ion beam system for submicron lithographyKurihara, Kenji et al. | 1985
- 45
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Ion beam lithography at nanometer dimensionsAdesida, I. / Kratschmer, E. / Wolf, E. D. / Muray, A. / Isaacson, M. et al. | 1985
- 50
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Submicron pattern fabrication by focused ion beamsKato, T. / Morimoto, H. / Saitoh, K. / Nakata, H. et al. | 1985
- 54
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Formation of submicron isolation in GaAs by implanting a focused boron ion beam emitted from a Pd–Ni–Si–Be–B LM ion sourceArimoto, H. / Takamori, A. / Miyauchi, E. / Hashimoto, H. et al. | 1985
- 58
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Masked ion beam resist exposure using grid support stencil masksRandall, J. N. / Flanders, D. C. / Economou, N. P. / Donnelly, J. P. / Bromley, E. I. et al. | 1985
- 62
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Vertical npn transistors by maskless boron implantationReuss, Robert H. / Morgan, Damon / Greeneich, Edwin W. / Clark, William M. / Rensch, David B. et al. | 1985
- 67
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Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and SiOchiai, Yukinori / Gamo, Kenji / Namba, Susumu et al. | 1985
- 71
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Characteristics of silicon removal by fine focused gallium ion beamYamaguchi, H. / Shimase, A. / Haraichi, S. / Miyauchi, T. et al. | 1985
- 75
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Systematic design of an electrostatic optical system for ion beam lithographyPaik, H. / Lewis, G. N. / Kirkland, E. J. / Siegel, B. M. et al. | 1985
- 82
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Experimental focused ion beam system using a gaseous field ion sourceBlackwell, R. J. / Kubby, J. A. / Lewis, G. N. / Siegel, B. M. et al. | 1985
- 87
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Application of a focused ion beam system to defect repair of VLSI masksHeard, P. J. / Cleaver, J. R. A. / Ahmed, H. et al. | 1985
- 91
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Focused Ga+ beam direct implantation for Si device fabricationHamadeh, H. / Corelli, J. C. / Steckl, A. J. / Berry, I. L. et al. | 1985
- 94
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- 98
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A high‐speed, high‐precision electron beam lithography system (electron optics)Saitou, N. / Okumura, M. / Matsuoka, G. / Matsuzaka, T. / Komoda, T. / Sakitani, Y. et al. | 1985
- 102
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Yaw corrected precision X‐Y stage for high‐throughput electron‐beam lithography systemsMoriyama, Shigeo / Ozasa, Susumu / Saitou, Norio et al. | 1985
- 106
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An electron beam lithography system for submicron VHSIC device fabricationKing, H. J. / Merritt, P. E. / Otto, O. W. / Ozdemir, F. S. / Pasiecznik, John / Carroll, A. M. / Cavan, D. L. / Eckes, W. / Lin, L. H. / Veneklasen, L. et al. | 1985
- 112
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High speed precision X‐Y stageReeds, John / Hansen, S. / Otto, O. / Carroll, Allen M. / McCarthy, Donald J. / Radley, Jack et al. | 1985
- 117
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Fabrication and resist exposure characteristics of 50 keV nanometer e‐beam lithography systemGamo, Kenji / Yamashita, Kazuhiro / Emoto, Fumiaki / Namba, Susumu / Samoto, Norihiko / Shimizu, Ryuichi et al. | 1985
- 121
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An experimental variable shaped electron beam lithography systemHe, Fu‐min / Lin, Chun‐lan / Fang, Guan‐rong / Wang, Li‐ming et al. | 1985
- 124
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High‐voltage shaped e‐beam lithographyJones, G. A. C. / Sargent, P. M. / Norris, T. S. / Ahmed, H. et al. | 1985
- 128
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Evaluation of registration performance of IBM EL‐3 e‐beam mask making systemHsia, L. C. / Weber, E. V. et al. | 1985
- 131
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0.1 μ scale lithography using a conventional electron beam systemDix, C. / Flavin, P. G. / Hendy, P. / Jones, M. E. et al. | 1985
- 136
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Electron beam proximity printing: Complementary‐mask and level‐to‐level overlay with high accuracyNehmiz, P. / Zapka, W. / Behringer, U. / Kallmeyer, M. / Bohlen, H. et al. | 1985
- 140
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High resolution distortion measurements of electron‐beam transmission masksZapka, W. / Nehmiz, P. / Bohlen, H. et al. | 1985
- 144
-
A combined electron and ion beam lithography systemCleaver, J. R. A. / Ahmed, H. et al. | 1985
- 148
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Proximity effect correction in variably shaped electron‐beam lithographyChen, A. S. / Neureuther, A. R. / Pavkovich, J. M. et al. | 1985
- 153
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Application of the GHOST proximity effect correction scheme to round beam and shaped beam electron lithography systemsOwen, Geraint / Rissman, Paul / Long, Marsha F. et al. | 1985
- 159
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GHOST solubility rate ratio: A new parameter for characterization of positive electron resistsRissman, Paul / Owen, Geraint et al. | 1985
- 165
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Two‐dimensional Haar thinning for data base compaction in Fourier proximity correction for electron beam lithographyHaslam, M. E. / McDonald, J. F. / King, D. C. / Bourgeois, M. / Chow, D. G. L. / Steckl, A. J. et al. | 1985
- 174
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Measurements of electron range and scattering in high voltage e‐beam lithographyMankiewich, P. M. / Jackel, L. D. / Howard, R. E. et al. | 1985
- 177
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A computer‐aided evaluation system for sectored‐type multipole electrostatic deflectorsSoma, T. / Idesawa, M. / Goto, E. / Sasaki, T. et al. | 1985
- 181
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Automatic column control for high speed electron beam delineatorGoto, M. / Wada, H. / Nakasuji, M. / Yoshikawa, Y. / Muraguchi, Y. / Takigawa, T. / Sasaki, S. / Sano, S. et al. | 1985
- 185
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A high speed EBL column designed to minimize beam interactionsVeneklasen, Lee H. et al. | 1985
- 190
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Energy broadening in electron beams: A comparison of existing theories and Monte Carlo simulationJansen, G. H. / Groves, T. R. / Stickel, W. et al. | 1985
- 194
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A line electron lensLevi, Mark W. et al. | 1985
- 198
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High resolution, low‐voltage probes from a field emission source close to the target planeMcCord, M. A. / Pease, R. F. W. et al. | 1985
- 202
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Derivation of the condition for onset of instabilities of a conducting fluid surface under electrostatic stress: Application to liquid metal ion sourcesMiskovsky, N. M. / Cutler, P. H. / Kazes, E. et al. | 1985
- 207
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A Monte Carlo calculation of the virtual source size for a liquid metal ion sourceWard, J. W. et al. | 1985
- 214
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Beam current stability from localized emission sites in a field ion sourceSchwoebel, P. R. / Hanson, G. R. et al. | 1985
- 220
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Emission characteristics of the ZrO/W thermal field electron sourceTuggle, D. W. / Swanson, L. W. et al. | 1985
- 224
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The prospects of field emission for e‐beam inspectionOrloff, J. / Swanson, L. W. / Li, Jia‐Zheng et al. | 1985
- 227
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A synchrotron radiation x‐ray lithography beam line of novel designCerrina, F. / Guckel, H. / Wiley, J. D. / Taylor, J. W. et al. | 1985
- 232
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Proposals and experiments on large area exposure in synchrotron radiation lithographyTanino, H. / Hoh, K. / Hirata, M. / Atoda, N. / Ichimura, S. et al. | 1985
- 237
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E‐beam metrology of chromium master masks and of masks for x‐ray lithographyBruenger, W. H. / Betz, H. / Heuberger, A. / Müller, K. P. et al. | 1985
- 241
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Overlay measurements for x‐ray lithographyMüller, K.‐H. / Burghause, H. et al. | 1985
- 245
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Monte Carlo simulation of line edge profiles and linewidth control in x‐ray lithographySemenzato, L. / Eaton, S. / Neukermans, A. / Jaeger, R. P. et al. | 1985
- 253
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A new polyimide membrane for x‐ray masksHuang, J. B. / Gong, B. M. et al. | 1985
- 258
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High brightness laser/plasma source for high throughput submicron x‐ray lithographyHoffman, Alan L. / Albrecht, Georg F. / Crawford, Edward A. et al. | 1985
- 262
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Repair of x‐ray lithography masks using UV‐laser photodepositionRandall, J. N. / Ehrlich, D. J. / Tsao, J. Y. et al. | 1985
- 265
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X‐ray zone plates fabricated using electron beam lithography and reactive ion etchingAritome, H. / Aoki, H. / Namba, S. et al. | 1985
- 268
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Infrared mesh filters fabricated by electron‐beam lithographyByrne, D. M. / Brouns, A. J. / Case, F. C. / Tiberio, R. C. / Whitehead, B. L. / Wolf, E. D. et al. | 1985
- 272
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Reactive‐ion etching of 0.2 μm period gratings in tungsten and molybdenum using CBrF3Schattenburg, M. L. / Plotnik, I. / Smith, Henry I. et al. | 1985
- 276
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X‐ray laser fabrication by anisotropic etching of siliconHawryluk, A. M. / Ciarlo, D. R. / Rambach, G. D. et al. | 1985
- 282
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Suspended metal mask techniques in Josephson junction fabricationOno, R. H. / Sauvageau, J. E. / Jain, A. K. / Schwartz, D. B. / Springer, K. T. / Lukens, J. E. et al. | 1985
- 286
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Submicrometer FET gate fabrication using resistless and focused ion beam techniquesRensch, David B. / Chen, John Y. / Clark, William M. / Courtney, M. DuChesne et al. | 1985
- 290
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Variable‐shaped EB sub‐half‐micron lithography applied to high‐power GaAs FET’sSuzuki, K. / Itoh, H. / Sugiura, T. et al. | 1985
- 295
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0.5 μ SWAMI/NMOS process technology with electron beam lithographyLiu, E. David / Chiu, Kuang Y. / Rissman, Paul / Choong, Hsia et al. | 1985
- 299
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High resolution electron beam and dry etch based process for self‐aligned 200 nm Si FET’sNulman, J. / Krusius, J. P. et al. | 1985
- 306
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An organosilicon novalac resin for multilevel resist applicationsWilkins, C. W. / Reichmanis, E. / Wolf, T. M. / Smith, B. C. et al. | 1985
- 310
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- 314
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New, deep UV resist (LMR) for lift‐off techniqueYamashita, Yoshio / Kawazu, Ryuzi / Kawamura, Kazutami / Ohno, Seigo / Asano, Takateru / Kobayashi, Kenji / Nagamatsu, Gentaro et al. | 1985
- 319
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Excimer laser exposure of Ag2Se/GeSe2: High contrast effectsPolasko, K. J. / Pease, R. F. W. / Marinero, E. E. / Cagan, M. R. et al. | 1985
- 323
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A water soluble contrast enhancement layerHalle, L. F. et al. | 1985
- 327
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- 331
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A negative photoresist (TAS) for a bi‐layer resist systemSaigo, K. / Ohnishi, Y. / Suzuki, M. / Gokan, H. et al. | 1985
- 335
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An improved trilevel resist system for submicron optical lithographyGellrich, N. / Beneking, H. / Arden, W. et al. | 1985
- 339
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An investigation of the lithographic properties of the poly (p‐methylstyrene‐co‐chloromethylstyrene) resist systemLedwith, A. / Mills, M. / Hendy, P. / Brown, A. / Clements, S. / Moody, R. et al. | 1985
- 343
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Nitrocellulose as a positive or negative self‐developing resistGeis, M. W. / Randall, J. N. / Mountain, R. W. / Woodhouse, J. D. / Bromley, E. I. / Astolfi, D. K. / Economou, N. P. et al. | 1985
- 347
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Chain scissioning yields and dry etch durabilities of polymers based on itaconic acid derivativesAnderson, C. C. / Rodriguez, F. et al. | 1985
- 353
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Ion beam lithography: An investigation of resolution limits and sensitivities of ion‐beam exposed PMMAKarapiperis, L. / Dubreuil, D. / David, Ph. / Dieumegard, D. et al. | 1985
- 358
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Summary Abstract: Characteristics of organosilicon polymers immersed in gaseous plasmasParaszczak, J. / Babich, E. / Hatzakis, M. / Shaw, J. et al. | 1985
- 360
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Lithographic evaluation and processing of chlorinated polymethylstyreneHartney, M. A. / Tarascon, R. G. / Novembre, A. E. et al. | 1985
- 367
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Radiolysis and resolution limits of inorganic halide resistsMuray, A. / Scheinfein, M. / Isaacson, M. / Adesida, I. et al. | 1985
- 373
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PGN as a good dry etching resistant negative electron beam resistLin, Fei Y. / Gong, B. M. / Ye, Yong D. / Ku, Chen C. et al. | 1985
- 377
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A comparison of backscattered electron and optical images for submicron defect detectionRosenfield, Michael G. / Goodman, Douglas S. / Neureuther, Andrew R. / Prouty, Mark D. et al. | 1985
- 383
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Improved energy analyzer for voltage measurement in electron beam probing for LSI diagnosisIto, A. / Ookubo, K. / Goto, Y. / Furukawa, Y. / Inagaki, T. et al. | 1985
- 386
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Optical characteristics of 0.1 μm circular apertures in a metal film as light sources for scanning ultramicroscopyFischer, U. Ch. et al. | 1985
- 391
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RBS analysis with a 1 μ beamMorris, W. G. / Katz, W. / Bakhru, H. / Haberl, A. W. et al. | 1985
- 395
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Dry etching of through substrate via holes for GaAs MMIC’sHipwood, L. G. / Wood, P. N. et al. | 1985
- 398
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Effects of ion species and adsorbed gas on dry etching induced damage in GaAsPang, S. W. / Geis, M. W. / Efremow, N. N. / Lincoln, G. A. et al. | 1985
- 402
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GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching systemAsakawa, K. / Sugata, S. et al. | 1985
- 406
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Evidence of crystallographic etching in (100)GaAs using SiCl4 reactive ion etchingLi, J. Z. / Adesida, I. / Wolf, E. D. et al. | 1985
- 410
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The significance of reactive ions and reactive neutrals in ion‐beam‐assisted etchingChinn, J. D. / Wolf, E. D. et al. | 1985
- 416
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Ion‐beam‐assisted etching of diamondEfremow, N. N. / Geis, M. W. / Flanders, D. C. / Lincoln, G. A. / Economou, N. P. et al. | 1985
- 419
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Hollow cathode etching with CF4 gas mixturesHorwitz, Chris M. et al. | 1985
- 421
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Simulation of mask scattering effects in masked ion beam lithographyAtkinson, Gary M. / Neureuther, Andrew R. et al. | 1985
- 425
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Modeling highly nonlinear resistsEib, Nicholas K. et al. | 1985
- 429
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Modeling and exposure of three‐dimensional shaped beam profiles in electron resistAugur, R. A. / Jones, G. A. C. / Ahmed, H. et al. | 1985
- 434
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Analytical model of positive resist development applied to linewidth control in optical lithographyWatts, M. P. C. et al. | 1985
- 441
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Computer‐aided analysis of electron beam induced heating, melting, and resolidification of metals and semiconductorsBhattacharyya, Manoj K. / Tuma, David T. / Cendes, Zoltan J. et al. | 1985
- 447
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Photodefinable carbon films: Control of image qualityLyons, A. M. / Hale, L. P. / Wilkins, C. W. et al. | 1985
- 453
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Nozzle beam deposition of SiO2 filmsWong, J. / Lu, T.‐M. / Mehta, S. et al. | 1985
- 457
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Summary Abstract: Ion cluster emission and deposition from liquid metal ion sourcesD’Cruz, C. / Pourrezaei, K. / Wagner, A. et al. | 1985
- 458
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Range of boron ions in polymers: A SIMS studyTennant, D. M. / Dayem, A. H. / Howard, R. E. / Westerwick, E. H. et al. | 1985