Electronic structure of samarium atoms adsorbed on the GaAs(110) surface (Englisch)
- Neue Suche nach: Allan, G.
- Neue Suche nach: Delerue, C.
- Neue Suche nach: Allan, G.
- Neue Suche nach: Delerue, C.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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10
, 4
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1928-1931
;
1992
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Electronic structure of samarium atoms adsorbed on the GaAs(110) surface
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Weitere Titelangaben:Sm atoms adsorbed on the GaAs(110) surface
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Beteiligte:Allan, G. ( Autor:in ) / Delerue, C. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.07.1992
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 4
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Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular‐beam epitaxially grown GaAs(001)Pashley, M. D. / Haberern, K. W. / Feenstra, R. M. et al. | 1992
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Atom‐resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopyBressler‐Hill, V. / Wassermeier, M. / Pond, K. / Maboudian, R. / Briggs, G. A. D. / Petroff, P. M. / Weinberg, W. H. et al. | 1992
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Interface states and the transport of two‐dimensional interface excitons in AlGaAs/GaAs structuresGilliland, G. D. / Wolford, D. J. / Northrop, G. A. / Petrovic, M. S. / Kuech, T. F. / Bradley, J. A. et al. | 1992
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Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near‐infrared cathodoluminescence studyRich, D. H. / Rajkumar, K. C. / Chen, Li / Madhukar, A. / George, T. / Maserjian, J. / Grunthaner, F. J. / Larsson, A. et al. | 1992
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Study of partial strain release and surface states formed on the sidewall of InGaAs quantum‐well wiresTan, I‐Hsing / Mirin, Richard / Yasuda, Takashi / Hu, Evelyn L. / Bowers, John / Prater, Craig B. / Hansma, Paul K. / He, Ming Yuan / Evans, Anthony G. et al. | 1992
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Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wellsSobiesierski, Z. / Woolf, D. A. / Frova, A. / Phillips, R. T. et al. | 1992
- 1980
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Effect of Γ–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructuresTing, D. Z.‐Y. / McGill, T. C. et al. | 1992
- 1984
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Dynamic effects of coherent epitaxial strain and surface stability: Ge on Si(100)Zinke‐Allmang, Martin et al. | 1992
- 1990
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Surface morphology of molecular‐beam epitaxially grown Si1−xGex layers on (100) and (110) SiPike, W. T. / Fathauer, R. W. / Anderson, M. S. et al. | 1992
- 1994
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Study of phonons and long‐range order in Si–Ge superlattices using empirical interatomic potentialsKhor, K. E. / Das Sarma, S. et al. | 1992
- 1998
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Band‐edge exciton luminescence from Si/strained Si1−xGex/Si structuresSturm, J. C. / Xiao, X. / Schwartz, P. V. / Liu, C. W. / Lenchyshyn, L. C. / Thewalt, M. L. W. et al. | 1992
- 2002
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Characterization of Si1−xGex/Si (100) heterostructures by photoluminescence and admittance spectroscopySouifi, A. / Brémond, G. / Benyattou, T. / Guillot, G. / Dutartre, D. / Berbezier, I. et al. | 1992
- 2008
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In situ transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si p–n junctionsRoss, F. M. / Hull, R. / Bahnck, D. / Bean, J. C. / Peticolas, J. / Hamm, R. A. / Huggins, H. A. et al. | 1992
- 2013
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Si(100) and Ge(100) core‐level shifts: A reevaluationYang, X. / Cao, R. / Terry, J. / Pianetta, P. et al. | 1992
- 2018
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Photoluminescence from pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy: Variation of the band gap with high pressureNorthrop, G. A. / Morar, J. F. / Wolford, D. J. / Bradley, J. A. et al. | 1992
- 2022
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Measurements of critical point energies in the conduction band structure of Si1−xGexMorar, J. F. / Batson, P. E. et al. | 1992
- 2026
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Interfacial point defects in heavily implanted silicon germanium alloysZvanut, M. E. / Carlos, W. E. / Twigg, M. E. / Stahlbush, R. E. / Godbey, D. J. et al. | 1992
- 2030
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Observation of quantum dot levels produced by strain modulation of GaAs–AlGaAs quantum wellsKash, K. / Mahoney, Derek D. / Van der Gaag, B. P. / Gozdz, A. S. / Harbison, J. P. / Florez, L. T. et al. | 1992
- 2034
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Surface and interface ordering on non‐(100)‐oriented GaAs substratesNötzel, R. / Ploog, K. et al. | 1992
- 2040
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Growth of p‐ and n‐type GaAs/(AlGa)As double barrier resonant tunneling devices on (311)A and (111)B substrate orientationsHarrison, P. A. / Hayden, R. K. / Henini, M. / Valadares, E. C. / Hughes, O. H. / Eaves, L. et al. | 1992
- 2046
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Direct determination of impact ionization rates near threshold in Al0.9Ga0.1As and GaAs using molecular‐beam epitaxially grown GaAs/Al0.9Ga0.1As structures and soft x‐ray photoemissionEklund, E. A. / Kirchner, P. D. / Shuh, D. K. / McFeely, F. R. / Cartier, E. et al. | 1992
- 2051
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Lateral p–n junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfacesHarbury, Henry K. / Porod, Wolfgang / Goodnick, Stephen M. et al. | 1992
- 2056
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Quantum wells, excitons, and lasers at blue‐green wavelengths in ZnSe‐based heterostructuresNurmikko, Arto V. / Gunshor, Robert L. / Kobayashi, Masakazu et al. | 1992
- 2062
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Optical analysis of metalorganic vapor phase epitaxy grown ZnS/ZnSe/GaAs(100) heterostructures: Carrier diffusion and interface sharpnessHermans, J. / Wagner, V. / Geurts, J. / Woitok, J. / Söllner, J. / Heuken, M. / Heime, K. et al. | 1992
- 2066
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In situ Raman studies during the epitaxial growth of ZnSe layers on GaAs(110)Nowak, C. / Zahn, D. R. T. / Rossow, U. / Richter, W. et al. | 1992
- 2072
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Schottky barrier induced injecting contact on wide band gap semiconductorsLiu, Y. X. / Wang, M. W. / McCaldin, J. O. / McGill, T. C. et al. | 1992
- 2077
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Epitaxial Ga2Se3 layers grown on GaAs(100) using a heterovalent exchange reactionZahn, D. R. T. / Krost, A. / Kolodziejczyk, M. / Richter, W. et al. | 1992
- 2082
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Photoelectron holography of Si(100)‐[2×1] and other surface and thin‐film structuresTonner, B. P. / Zhang, J. / Chen, X. / Han, Z.‐L. / Harp, G. R. / Saldin, D. K. et al. | 1992
- 2088
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Near‐surface atom imaging using multiple‐energy photoelectron holographyTerminello, L. J. / Barton, J. J. / Lapiano‐Smith, D. A. et al. | 1992
- 2092
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Momentum‐space images of surface dimers on GaAs(001)‐(2×4) by high‐energy Auger and x‐ray photoelectron diffractionChambers, S. A. / Loebs, V. A. / Li, Hua / Tong, S. Y. et al. | 1992