Leakage and field emission in side-gate graphene field effect transistors (Englisch)
- Neue Suche nach: Di Bartolomeo, A.
- Neue Suche nach: Giubileo, F.
- Neue Suche nach: Iemmo, L.
- Neue Suche nach: Romeo, F.
- Neue Suche nach: Russo, S.
- Neue Suche nach: Unal, S.
- Neue Suche nach: Passacantando, M.
- Neue Suche nach: Grossi, V.
- Neue Suche nach: Cucolo, A. M.
- Neue Suche nach: Di Bartolomeo, A.
- Neue Suche nach: Giubileo, F.
- Neue Suche nach: Iemmo, L.
- Neue Suche nach: Romeo, F.
- Neue Suche nach: Russo, S.
- Neue Suche nach: Unal, S.
- Neue Suche nach: Passacantando, M.
- Neue Suche nach: Grossi, V.
- Neue Suche nach: Cucolo, A. M.
In:
Applied Physics Letters
;
109
, 2
;
5
;
2016
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Leakage and field emission in side-gate graphene field effect transistors
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Beteiligte:Di Bartolomeo, A. ( Autor:in ) / Giubileo, F. ( Autor:in ) / Iemmo, L. ( Autor:in ) / Romeo, F. ( Autor:in ) / Russo, S. ( Autor:in ) / Unal, S. ( Autor:in ) / Passacantando, M. ( Autor:in ) / Grossi, V. ( Autor:in ) / Cucolo, A. M. ( Autor:in )
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Erschienen in:Applied Physics Letters ; 109, 2 ; 5
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Verlag:
- Neue Suche nach: AIP Publishing LLC
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Erscheinungsdatum:11.07.2016
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Format / Umfang:5 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 109, Ausgabe 2
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