Influence of interface relaxation on passivation kinetics in H2 of coordination Pb defects at the (111)Si/SiO2 interface revealed by electron spin resonance (Englisch)
Nationallizenz
- Neue Suche nach: Stesmans, A.
- Neue Suche nach: Stesmans, A.
In:
Journal of Applied Physics
;
92
, 3
;
1317-1328
;
2002
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Influence of interface relaxation on passivation kinetics in H2 of coordination Pb defects at the (111)Si/SiO2 interface revealed by electron spin resonance
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Beteiligte:Stesmans, A. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 92, 3 ; 1317-1328
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:01.08.2002
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 92, Ausgabe 3
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