Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperature (Englisch)
Nationallizenz
- Neue Suche nach: Wilson, R. G.
- Neue Suche nach: Wilson, R. G.
In:
Journal of Applied Physics
;
55
, 10
;
3490-3494
;
1984
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperature
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Beteiligte:Wilson, R. G. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 55, 10 ; 3490-3494
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:15.05.1984
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 55, Ausgabe 10
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