Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting (Englisch)
Freier Zugriff
- Neue Suche nach: Yu, Kin Man
- Neue Suche nach: Scarpulla, M. A.
- Neue Suche nach: Ho, Chun Yuen
- Neue Suche nach: Dubon, O. D.
- Neue Suche nach: Walukiewicz, W.
- Neue Suche nach: Yu, Kin Man
- Neue Suche nach: Scarpulla, M. A.
- Neue Suche nach: Ho, Chun Yuen
- Neue Suche nach: Dubon, O. D.
- Neue Suche nach: Walukiewicz, W.
In:
Journal of Applied Physics
;
135
, 4
;
11
;
2024
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting
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Beteiligte:Yu, Kin Man ( Autor:in ) / Scarpulla, M. A. ( Autor:in ) / Ho, Chun Yuen ( Autor:in ) / Dubon, O. D. ( Autor:in ) / Walukiewicz, W. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 135, 4 ; 11
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Verlag:
- Neue Suche nach: AIP Publishing LLC
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Erscheinungsdatum:28.01.2024
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Format / Umfang:11 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 135, Ausgabe 4
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