High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces (Englisch)
Nationallizenz
- Neue Suche nach: Apostolopoulos, G.
- Neue Suche nach: Vellianitis, G.
- Neue Suche nach: Dimoulas, A.
- Neue Suche nach: Alexe, M.
- Neue Suche nach: Scholz, R.
- Neue Suche nach: Fanciulli, M.
- Neue Suche nach: Dekadjevi, D. T.
- Neue Suche nach: Wiemer, C.
- Neue Suche nach: Apostolopoulos, G.
- Neue Suche nach: Vellianitis, G.
- Neue Suche nach: Dimoulas, A.
- Neue Suche nach: Alexe, M.
- Neue Suche nach: Scholz, R.
- Neue Suche nach: Fanciulli, M.
- Neue Suche nach: Dekadjevi, D. T.
- Neue Suche nach: Wiemer, C.
In:
Applied Physics Letters
;
81
, 19
;
3549-3551
;
2002
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces
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Beteiligte:Apostolopoulos, G. ( Autor:in ) / Vellianitis, G. ( Autor:in ) / Dimoulas, A. ( Autor:in ) / Alexe, M. ( Autor:in ) / Scholz, R. ( Autor:in ) / Fanciulli, M. ( Autor:in ) / Dekadjevi, D. T. ( Autor:in ) / Wiemer, C. ( Autor:in )
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Erschienen in:Applied Physics Letters ; 81, 19 ; 3549-3551
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:04.11.2002
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 81, Ausgabe 19
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