0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures (Englisch)
Nationallizenz
- Neue Suche nach: Yu, P. W.
- Neue Suche nach: Robinson, G. D.
- Neue Suche nach: Sizelove, J. R.
- Neue Suche nach: Stutz, C. E.
- Neue Suche nach: Yu, P. W.
- Neue Suche nach: Robinson, G. D.
- Neue Suche nach: Sizelove, J. R.
- Neue Suche nach: Stutz, C. E.
In:
Physical Review B
;
49
, 7
;
4689-4694
;
1994
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures
-
Beteiligte:Yu, P. W. ( Autor:in ) / Robinson, G. D. ( Autor:in ) / Sizelove, J. R. ( Autor:in ) / Stutz, C. E. ( Autor:in )
-
Erschienen in:Physical Review B ; 49, 7 ; 4689-4694
-
Verlag:
- Neue Suche nach: The American Physical Society
-
Erscheinungsdatum:15.02.1994
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Format / Umfang:6 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 49, Ausgabe 7
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