Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering method (Englisch)
- Neue Suche nach: Li, B.B.
- Neue Suche nach: Lin, L.
- Neue Suche nach: Shen, H.L.
- Neue Suche nach: Boafo, F.E.
- Neue Suche nach: Chen, Z.F.
- Neue Suche nach: Liu, B.
- Neue Suche nach: Zhang, R.
- Neue Suche nach: Li, B.B.
- Neue Suche nach: Lin, L.
- Neue Suche nach: Shen, H.L.
- Neue Suche nach: Boafo, F.E.
- Neue Suche nach: Chen, Z.F.
- Neue Suche nach: Liu, B.
- Neue Suche nach: Zhang, R.
In:
The European Physical Journal Applied Physics
;
58
, 2
;
2012
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering method
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Beteiligte:Li, B.B. ( Autor:in ) / Lin, L. ( Autor:in ) / Shen, H.L. ( Autor:in ) / Boafo, F.E. ( Autor:in ) / Chen, Z.F. ( Autor:in ) / Liu, B. ( Autor:in ) / Zhang, R. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: EDP Sciences
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Erscheinungsdatum:01.05.2012
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 58, Ausgabe 2
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