Recent developments of the two-dimensional technological process simulator OSIRIS (Englisch)
- Neue Suche nach: Guillemot, N.
- Neue Suche nach: Pananakakis, G.
- Neue Suche nach: Chenevier, P.
- Neue Suche nach: Guillemot, N.
- Neue Suche nach: Pananakakis, G.
- Neue Suche nach: Chenevier, P.
In:
Revue de Physique Appliquée
;
22
, 7
;
477-485
;
1987
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Recent developments of the two-dimensional technological process simulator OSIRIS
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Beteiligte:
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Erschienen in:Revue de Physique Appliquée ; 22, 7 ; 477-485
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Verlag:
- Neue Suche nach: EDP Sciences
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Erscheinungsdatum:01.07.1987
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Format / Umfang:9 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:bird's beak , elemental semiconductors , semiconductor , SEMIROX structures , oxidation , redistributed impurity profiles , OSIRIS , Si , impurities , diffusion in solids , ion implantation , semiconductor device models , oxide growth , impurity distribution , semiconductor technology , dopant redistribution , integrated circuits , two dimensional technological process simulator , field effect integrated circuits , integrated circuit technology , electronic engineering computing , silicon , impurity diffusion , N Channel MOS device , digital simulation , numerical simulation
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Datenquelle:
Inhaltsverzeichnis – Band 22, Ausgabe 7
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Recent developments of the two-dimensional technological process simulator OSIRISGuillemot, N. / Pananakakis, G. / Chenevier, P. et al. | 1987
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Revue de livres| 1987