Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials (Englisch)
- Neue Suche nach: Usami, Noritaka
- Neue Suche nach: Nihei, Ryota
- Neue Suche nach: Azuma, Yukinaga
- Neue Suche nach: Yonenaga, Ichiro
- Neue Suche nach: Nakajima, Kazuo
- Neue Suche nach: Sawano, Kentarou
- Neue Suche nach: Shiraki, Yasuhiro
- Neue Suche nach: Usami, Noritaka
- Neue Suche nach: Nihei, Ryota
- Neue Suche nach: Azuma, Yukinaga
- Neue Suche nach: Yonenaga, Ichiro
- Neue Suche nach: Nakajima, Kazuo
- Neue Suche nach: Sawano, Kentarou
- Neue Suche nach: Shiraki, Yasuhiro
In:
Thin Solid Films
;
517
, 1
;
14-16
;
2008
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials
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Beteiligte:Usami, Noritaka ( Autor:in ) / Nihei, Ryota ( Autor:in ) / Azuma, Yukinaga ( Autor:in ) / Yonenaga, Ichiro ( Autor:in ) / Nakajima, Kazuo ( Autor:in ) / Sawano, Kentarou ( Autor:in ) / Shiraki, Yasuhiro ( Autor:in )
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Erschienen in:Thin Solid Films ; 517, 1 ; 14-16
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2008
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 517, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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PrefaceDerrien, Jacques / Le Thanh, Vinh / Kasper, Erich et al. | 2008
- 2
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The present and the future of spintronicsFert, Albert et al. | 2008
- 6
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DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTsWashio, Katsuyoshi et al. | 2008
- 10
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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVDSakuraba, Masao / Muto, Daisuke / Mori, Masaki / Sugawara, Katsutoshi / Murota, Junichi et al. | 2008
- 14
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Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materialsUsami, Noritaka / Nihei, Ryota / Azuma, Yukinaga / Yonenaga, Ichiro / Nakajima, Kazuo / Sawano, Kentarou / Shiraki, Yasuhiro et al. | 2008
- 17
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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substratesParsons, J. / Beer, C.S. / Leadley, D.R. / Capewell, A.D. / Grasby, T.J. et al. | 2008
- 20
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Ion-assisted MBE for misfit-dislocation templates serving ordered growth of SiGe islandsLyutovich, K. / Oehme, M. / Werner, J. / Bahouchi, B. / Kasper, E. / Hofer, C. / Teichert, C. et al. | 2008
- 23
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High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial GeSouriau, L. / Terzieva, V. / Vandervorst, W. / Clemente, F. / Brijs, B. / Moussa, A. / Meuris, M. / Loo, R. / Caymax, M. et al. | 2008
- 27
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Reliability of ultra-thin titanium dioxide (TiO2) films on strained-SiBera, M.K. / Mahata, C. / Maiti, C.K. et al. | 2008
- 31
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Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescenceWang, Dong / Nakashima, Hiroshi / Tanaka, Masanori / Sadoh, Taizoh / Miyao, Masanobu / Morioka, Jun / Kitamura, Tokuhide et al. | 2008
- 34
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Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emissionZhao, M. / Karim, A. / Hansson, G.V. / Ni, W.-X. / Townsend, P. / Lynch, S.A. / Paul, D.J. et al. | 2008
- 38
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Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping processIi, Seiichiro / Takaki, Yuichi / Ikeda, Ken-ichi / Nakashima, Hideharu / Nakashima, Hiroshi et al. | 2008
- 41
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Control of electronic charged states of Si-based quantum dots for floating gate applicationMiyazaki, S. / Makihara, K. / Ikeda, M. et al. | 2008
- 45
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Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processesLiu, J. / Kim, J.H. / Xie, Y.H. / Lu, T.M. / Lai, K. et al. | 2008
- 50
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Photoluminescence of Si nanocrystals formed by the photosynthesisNozaki, S. / Chen, C.Y. / Kimura, S. / Ono, H. / Uchida, K. et al. | 2008
- 55
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Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructuresBurbaev, T.M. / Bagaev, V.S. / Bobrik, E.A. / Kurbatov, V.A. / Novikov, A.V. / Rzaev, M.M. / Sibeldin, N.N. / Schäffler, F. / Tsvetkov, V.A. / Tarakanov, A.G. et al. | 2008
- 57
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Growth and characterization of Ge nanostructures selectively grown on patterned SiCheng, M.H. / Ni, W.X. / Luo, G.L. / Huang, S.C. / Chang, J.J. / Lee, C.Y. et al. | 2008
- 62
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MBE growth conditions for Si island formation on Ge (001) substratesPachinger, D. / Lichtenberger, H. / Chen, G. / Stangl, J. / Hesser, G. / Schäffler, F. et al. | 2008
- 65
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Anisotropy of the surface thermodynamic properties of siliconMüller, P. / Métois, J.J. et al. | 2008
- 69
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The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clustersNikiforov, A.I. / Ulyanov, V.V. / Teys, S.A. / Gutakovsky, A.K. / Pchelyakov, O.P. et al. | 2008
- 71
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Impact of emitter fabrication on the yield of SiGe HBTsHeinemann, B. / Rücker, H. / Tillack, B. et al. | 2008
- 75
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Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting siliconCammilleri, D. / Fossard, F. / Débarre, D. / Tran Manh, C. / Dubois, C. / Bustarret, E. / Marcenat, C. / Achatz, P. / Bouchier, D. / Boulmer, J. et al. | 2008
- 80
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Silicide and germanide technology for contacts and gates in MOSFET applicationsZaima, Shigeaki / Nakatsuka, Osamu / Kondo, Hiroki / Sakashita, Mitsuo / Sakai, Akira / Ogawa, Masaki et al. | 2008
- 84
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Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)Radamson, H.H. / Kolahdouz, M. / Ghandi, R. / Hållstedt, J. et al. | 2008
- 87
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Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ionsSawano, K. / Fukumoto, A. / Hoshi, Y. / Yamanaka, J. / Nakagawa, K. / Shiraki, Y. et al. | 2008
- 90
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Selective vapor phase etching of SiGe versus Si by HClYamamoto, Yuji / Köpke, Klaus / Tillack, Bernd et al. | 2008
- 93
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Selective etching of Si1−xGex versus Si with gaseous HCl for the formation of advanced CMOS devicesLoubet, Nicolas / Kormann, Thomas / Chabanne, Guillaume / Denorme, Stéphane / Dutartre, Didier et al. | 2008
- 98
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Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technologyOda, Katsuya / Miura, Makoto / Shimamoto, Hiromi / Washio, Katsuyoshi et al. | 2008
- 101
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Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial GrowthCollaert, N. / Rooyackers, R. / Hikavyy, A. / Dixit, A. / Leys, F. / Verheyen, P. / Loo, R. / Jurczak, M. / Biesemans, S. et al. | 2008
- 105
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Studying the impact of carbon on device performance for strained-Si MOSFETsLee, M.H. / Chang, S.T. / Peng, C.-Y. / Hsieh, B.-F. / Maikap, S. / Liao, S.-H. et al. | 2008
- 110
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Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1−xGex/Si(100) heterostructureSeo, Takahiro / Sakuraba, Masao / Murota, Junichi et al. | 2008
- 113
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pMOS transistor with embedded SiGe: Elastic and plastic relaxation issuesHikavyy, A. / Bhouri, N. / Loo, R. / Verheyen, P. / Clemente, F. / Hopkins, J. / Trussell, R. / Caymax, M. et al. | 2008
- 117
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Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETsHållstedt, J. / Hellström, P.-E. / Radamson, H.H. et al. | 2008
- 121
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Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavitiesBoucaud, P. / El Kurdi, M. / David, S. / Checoury, X. / Li, X. / Ngo, T.-P. / Sauvage, S. / Bouchier, D. / Fishman, G. / Kermarrec, O. et al. | 2008
- 125
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Room-temperature light-emission from Ge quantum dots in photonic crystalsXia, Jinsong / Nemoto, Koudai / Ikegami, Yuta / Usami, Noritaka / Nakata, Yasushi / Shiraki, Yasuhiro et al. | 2008
- 128
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Photoluminescence of strained Si1−x−yGexCy epilayers on Si(100)Rowell, N.L. / Lockwood, D.J. / Baribeau, J.-M. et al. | 2008
- 132
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Performance and reliability of SiGe photodetectorsSarid, Gadi / Ginsburg, Eyal / Dosunmu, Femi / Morse, Mike et al. | 2008
- 134
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Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structureKunert, H.W. / Machatine, A.G.J. / Malherbe, J.B. / Barnas, J. / Hoffmann, A. / Wagner, M.R. et al. | 2008
- 137
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Germanium waveguide photodetectors integrated on silicon with MBEOehme, M. / Werner, J. / Kaschel, M. / Kirfel, O. / Kasper, E. et al. | 2008
- 140
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Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrateKunert, B. / Németh, I. / Reinhard, S. / Volz, K. / Stolz, W. et al. | 2008
- 144
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Role of hydrogen at germanium/dielectric interfacesVan de Walle, C.G. / Weber, J.R. / Janotti, A. et al. | 2008
- 148
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GaAs on Ge for CMOSBrammertz, G. / Caymax, M. / Meuris, M. / Heyns, M. / Mols, Y. / Degroote, S. / Leys, M. et al. | 2008
- 152
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Implantation defects and n-type doping in Ge and Ge rich SiGePeaker, A.R. / Markevich, V.P. / Hamilton, B. / Hawkins, I.D. / Slotte, J. / Kuitunen, K. / Tuomisto, F. / Satta, A. / Simoen, E. / Abrosimov, N.V. et al. | 2008
- 155
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Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substratesLee, S. / Long, J.P. / Lucovsky, G. / Lüning, J. et al. | 2008
- 159
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Tensile strained Ge layers on strain-relaxed Ge1−xSnx/virtual Ge substratesTakeuchi, Shotaro / Sakai, Akira / Nakatsuka, Osamu / Ogawa, Masaki / Zaima, Shigeaki et al. | 2008
- 163
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Charge trapping characteristics in high-k gate dielectrics on germaniumMahata, C. / Bera, M.K. / Bose, P.K. / Maiti, C.K. et al. | 2008
- 167
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Ge wire MOSFETs fabricated by three-dimensional Ge condensation techniqueIrisawa, T. / Numata, T. / Hirashita, N. / Moriyama, Y. / Nakaharai, S. / Tezuka, T. / Sugiyama, N. / Takagi, S. et al. | 2008
- 170
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Photoelectric method for non-contact characterization of SiGeTsidilkovski, Edward / Steeples, Kenneth et al. | 2008
- 172
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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substratesTerzieva, V. / Souriau, L. / Caymax, M. / Brunco, D.P. / Moussa, A. / Van Elshocht, S. / Loo, R. / Clemente, F. / Satta, A. / Meuris, Marc et al. | 2008
- 178
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(110) Ultrathin GOI layers fabricated by Ge condensation methodDissanayake, Sanjeewa / Shuto, Yusuke / Sugahara, Satoshi / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2008
- 181
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Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics applicationMiyao, Masanobu / Ueda, Koji / Ando, Yu-ichiro / Kumano, Mamoru / Sadoh, Taizoh / Narumi, Kazumasa / Maeda, Yoshihito et al. | 2008
- 184
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Spintronics for nanoelectronics and nanosystemsWang, Kang L. / Zhao, Zuoming / Khitun, Alex et al. | 2008
- 191
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Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injectionOlive-Mendez, S. / Spiesser, A. / Michez, L.A. / Le Thanh, V. / Glachant, A. / Derrien, J. / Devillers, T. / Barski, A. / Jamet, M. et al. | 2008
- 197
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Epitaxial growth of high-κ oxides on siliconMerckling, C. / Saint-Girons, G. / Delhaye, G. / Patriarche, G. / Largeau, L. / Favre-Nicollin, V. / El-Kazzi, M. / Regreny, P. / Vilquin, B. / Marty, O. et al. | 2008
- 201
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Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectricRoeckerath, M. / Heeg, T. / Lopes, J.M.J. / Schubert, J. / Mantl, S. / Besmehn, A. / Myllymäki, P. / Niinistö, L. et al. | 2008
- 204
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Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization annealSugimoto, Youhei / Kajiwara, Masanari / Yamamoto, Keisuke / Suehiro, Yuusaku / Wang, Dong / Nakashima, Hiroshi et al. | 2008
- 207
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Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatmentEfthymiou, E. / Bernardini, S. / Zhang, J.F. / Volkos, S.N. / Hamilton, B. / Peaker, A.R. et al. | 2008
- 209
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Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopyNarita, Yuzuru / Hirose, Fumihiko / Nagato, Masaya / Kinoshita, Yuta et al. | 2008
- 213
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Thermal stability improvement of Si1−yCy layers by SiO2 cap layersIshihara, Hanae / Inoue, Komaki / Yamada, Akira / Konagai, Makoto et al. | 2008
- 216
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Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH4Sakata, Tsutomu / Makihara, Katsunori / Deki, Hidenori / Higashi, Seiichiro / Miyazaki, Seiichi et al. | 2008
- 219
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Structural change of atomic-order nitride formed on Si1−xGex(100) and Ge(100) by heat treatmentAkiyama, Nao / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2008
- 222
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Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructuresConde, J.C. / Fornarini, L. / Chiussi, S. / Gontad, F. / González, P. / Leon, B. / Martelli, S. et al. | 2008
- 227
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MBE growth of low-defect Si layers highly doped with SbWerner, J. / Oehme, M. / Kirfel, O. / Lyutovich, K. / Kasper, E. et al. | 2008
- 229
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Si epitaxial growth on self-limitedly B adsorbed Si1−xGex(100) by ultraclean low-pressure CVD systemIshibashi, Kiyohisa / Sakuraba, Masao / Murota, Junichi / Inokuchi, Yasuhiro / Kunii, Yasuo / Kurokawa, Harushige et al. | 2008
- 232
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Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphereYamanaka, Junji / Horie, Tadashi / Mitsui, Minoru / Arimoto, Keisuke / Nakagawa, Kiyokazu / Sato, Tetsuya / Sawano, Kentarou / Shiraki, Yasuhiro / Moritani, Tomokazu / Doi, Minoru et al. | 2008
- 235
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Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded bufferArimoto, Keisuke / Watanabe, Masato / Yamanaka, Junji / Nakagawa, Kiyokazu / Sawano, Kentarou / Shiraki, Yasuhiro / Usami, Noritaka / Nakajima, Kazuo et al. | 2008
- 239
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Investigations of hydrogen sensors made of porous siliconGalstyan, V.E. / Martirosyan, Kh.S. / Aroutiounian, V.M. / Arakelyan, V.M. / Arakelyan, A.H. / Soukiassian, P.G. et al. | 2008
- 242
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High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVDYasutake, K. / Ohmi, H. / Kirihata, Y. / Kakiuchi, H. et al. | 2008
- 245
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Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structuresSeo, M.W. / Kwak, D.W. / Cho, W.S. / Park, C.J. / Kim, W.S. / Cho, H.Y. et al. | 2008
- 248
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Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation methodTanaka, Masanori / Kenjo, Atsushi / Sadoh, Taizoh / Miyao, Masanobu et al. | 2008
- 251
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Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structuresTanaka, Masanori / Ohka, Tatsuo / Sadoh, Taizoh / Miyao, Masanobu et al. | 2008
- 254
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Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam depositionMitsui, M. / Tamoto, M. / Arimoto, K. / Yamanaka, J. / Nakagawa, K. / Sato, T. / Usami, N. / Sawano, K. / Shiraki, Y. et al. | 2008
- 257
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The influence of Si coverage in a chip on layer profile of selectively grown Si1−xGex layers using RPCVD techniqueKolahdouz, M. / Ghandi, R. / Hållstedt, J. / Ösling, M. / Wise, R. / Wejtmans, Hans / Radamson, H.H. et al. | 2008
- 259
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Doping concentration control of SiGe layers by spectroscopic ellipsometryFursenko, O. / Bauer, J. / Zaumseil, P. / Yamamoto, Y. / Tillack, B. et al. | 2008
- 262
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Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundariesMadani, Salah / Outtas, Toufik / Adami, Lahbib et al. | 2008
- 265
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Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopyPerova, T.S. / Moore, R.A. / Lyutovich, K. / Oehme, M. / Kasper, E. et al. | 2008
- 269
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Ex-situ wet clean and in-situ hydrogen clean for Si and SiGe epitaxyKormann, Thomas / Garnier, Philippe / Chabanne, Guillaume / Fortuin, Arnoud et al. | 2008
- 272
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Relaxed germanium films on silicon (110)Wietler, Tobias F. / Bugiel, Eberhard / Hofmann, Karl R. et al. | 2008
- 275
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Free surface nanopaterning with burried hexagonal dislocations array. Simulation of anisotropic elastic fieldsOuttas, Toufik / Madani, Salah / Adami, Lahbib et al. | 2008
- 278
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Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defectsVdovin, V.I. / Zakharov, N.D. et al. | 2008
- 281
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Observation of in-plane strain fluctuation in relaxed SiGe virtual substrateHuang, Wu-Ping / Cheng, Henry H. / Sun, Gregory / Lou, Rui-Fa / Yeh, J.H. / Shen, Tzer-Min et al. | 2008
- 285
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Characterization of anisotropic relaxation rate of SGOI (110) substratesMoriyama, Yoshihiko / Hirashita, Norio / Sugiyama, Naoharu / Takagi, Shin-ichi et al. | 2008
- 289
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Single swift heavy ion-induced trail of discontinuous nanostructures on SiO2 surface under grazing incidenceCarvalho, A.M.J.F. / Touboul, A.D. / Marinoni, M. / Guasch, C. / Ramonda, M. / Lebius, H. / Saigné, F. / Bonnet, J. et al. | 2008
- 293
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In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substratesSanduijav, B. / Matei, D. / Chen, G. / Schäffler, F. / Bauer, G. / Springholz, G. et al. | 2008
- 297
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Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si filmsKondo, Hiroki / Ueyama, Tomonori / Ikenaga, Eiji / Kobayashi, Keisuke / Sakai, Akira / Ogawa, Masaki / Zaima, Shigeaki et al. | 2008
- 300
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Local strain in Si/Si0.6Ge0.4/Si(100) heterostructures by stripe-shape patterningUhm, Jangwoong / Sakuraba, Masao / Murota, Junichi et al. | 2008
- 303
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Electronic properties of Ge islands embedded in multilayer and superlattice structuresLeitão, J.P. / Sobolev, N.A. / Correia, M.R. / Carmo, M.C. / Stepina, N. / Yakimov, A. / Nikiforov, A. / Magalhães, S. / Alves, E. et al. | 2008
- 306
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Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristicsMakihara, Katsunori / Ikeda, Mitsuhisa / Higashi, Seiichiro / Miyazaki, Seiichi et al. | 2008
- 309
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MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiationStepina, N.P. / Dvurechenskii, A.V. / Ambrister, V.A. / Smagina, J.V. / Volodin, V.A. / Nenashev, A.V. / Leitão, J.P. / do Carmo, M.C. / Sobolev, N.A. et al. | 2008
- 313
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Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory deviceStepina, N.P. / Dvurechenskii, A.V. / Armbrister, V.A. / Kirienko, V.V. / Novikov, P.L. / Kesler, V.G. / Gutakovskii, A.K. / Smagina, Z.V. / Spesivtzev, E.V. et al. | 2008
- 317
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Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6Akhtar, Saeed / Tanaka, A. / Usami, K. / Tsuchiya, Y. / Oda, S. et al. | 2008
- 320
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Fabrication of uniaxially strained silicon nanowiresFeste, S.F. / Knoch, J. / Buca, D. / Mantl, S. et al. | 2008
- 323
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Characterization of bonding structures of directly bonded hybrid crystal orientation substratesToyoda, E. / Sakai, A. / Nakatsuka, O. / Isogai, H. / Senda, T. / Izunome, K. / Ogawa, M. / Zaima, S. et al. | 2008
- 327
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Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirrorCammilleri, D. / Fossard, F. / Halbwax, M. / Manh, C. Tran / Yam, N. / Débarre, D. / Boulmer, J. / Bouchier, D. et al. | 2008
- 331
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Enhanced n-type dopant solubility in tensile-strained SiBennett, N.S. / Radamson, H.H. / Beer, C.S. / Smith, A.J. / Gwilliam, R.M. / Cowern, N.E.B. / Sealy, B.J. et al. | 2008
- 334
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Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layersGhandi, R. / Kolahdouz, M. / Hållstedt, J. / Wise, R. / Wejtmans, Hans / Radamson, H.H. et al. | 2008
- 337
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SiGe quantum well thermistor materialsWissmar, S.G.E. / Radamsson, H.H. / Yamamoto, Y. / Tillack, B. / Vieider, C. / Andersson, J.Y. et al. | 2008
- 340
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Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structuresHoshi, Y. / Fukumoto, A. / Sawano, K. / Cayrefourcq, I. / Yoshimi, M. / Shiraki, Y. et al. | 2008
- 343
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Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfacesLucovsky, G. / Whitten, J.L. et al. | 2008
- 346
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High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growthTakehiro, Shinobu / Sakuraba, Masao / Tsuchiya, Toshiaki / Murota, Junichi et al. | 2008
- 350
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Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substratesKelaidis, N. / Ioannou-Sougleridis, V. / Skarlatos, D. / Tsamis, C. / Krontiras, C.A. / Georga, S.N. / Kellerman, B. / Seacrist, M. et al. | 2008
- 353
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Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation techniqueSawano, K. / Fukumoto, A. / Hoshi, Y. / Nakagawa, K. / Shiraki, Y. et al. | 2008
- 356
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The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETsChang, S.T. / Liao, S.H. / Lin, C.-Y. et al. | 2008
- 359
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Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum wellMyronov, M. / Shiraki, Y. / Mouri, T. / Itoh, K.M. et al. | 2008
- 362
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Memory properties of oxide–nitride–oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glassJung, Sungwook / Hwang, Sunghyun / Yi, J. et al. | 2008
- 365
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Epitaxy — A way to novel field effect devicesSulima, Torsten / Abelein, Ulrich / Eisele, Ignaz et al. | 2008
- 369
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Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effectAbdelmoumen, A. Ben / Cherfi, R. / Kechoune, M. / Aoucher, M. et al. | 2008
- 372
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Elementary excitations in Si, Ge, and diamond time reversal affectedKunert, H.W. / Machatine, A.G.J. / Malherbe, J.B. / Barnas, J. / Hoffmann, A. / Wagner, M.R. et al. | 2008
- 376
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Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealingGelloz, B. / Koyama, H. / Koshida, N. et al. | 2008
- 380
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Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour depositionOsmond, Johann / Isella, Giovanni / Chrastina, Daniel / Kaufmann, Rolf / von Känel, Hans et al. | 2008
- 383
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Epitaxially grown emitters for thin film crystalline silicon solar cellsVan Nieuwenhuysen, K. / Duerinckx, F. / Kuzma, I. / Payo, M. Recaman / Beaucarne, G. / Poortmans, J. et al. | 2008
- 385
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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layerShaleev, M.V. / Novikov, A.V. / Yablonskiy, A.N. / Drozdov, Y.N. / Kuznetsov, O.A. / Lobanov, D.N. / Krasilnik, Z.F. et al. | 2008
- 388
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Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µmSfina, N. / Lazzari, J.-L. / Cuminal, Y. / Christol, P. / Said, M. et al. | 2008
- 391
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Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealingMoutanabbir, O. / Miyamoto, S. / Sagara, A. / Oshikawa, H. / Itoh, K.M. et al. | 2008
- 395
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Ab-initio vibrational properties of SiGe alloysTorres, V.J.B. / Coutinho, J. / Briddon, P.R. / Barroso, M. et al. | 2008
- 398
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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islandsDrozdov, Yu.N. / Krasilnik, Z.F. / Kudryavtsev, К.Е. / Lobanov, D.N. / Novikov, А.V. / Shaleev, М.V. / Shengurov, D.V. / Shmagin, V.B. / Yablonskiy, А.N. et al. | 2008
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Ge growth over thin SiO2 by UHV–CVD for MOSFET applicationsRenard, C. / Halbwax, M. / Cammilleri, D. / Fossard, F. / Yam, V. / Bouchier, D. / Zheng, Y. et al. | 2008
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Homo and hetero epitaxy of Germanium using isobutylgermaneAttolini, G. / Bosi, M. / Musayeva, N. / Pelosi, C. / Ferrari, C. / Arumainathan, S. / Timò, G. et al. | 2008
- 407
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Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation processHirashita, Norio / Nakaharai, Shu / Moriyama, Yoshihiko / Usuda, Koji / Tezuka, Tsutomu / Sugiyama, Naoharu / Takagi, Shin-ichi et al. | 2008
- 412
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SO-limited mobility in a germanium inversion channel with non-ideal metal gateShah, Raheel / De Souza, M.M. et al. | 2008
- 416
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Low temperature epitaxy and the importance of moisture controlLeys, F.E. / Hikavyy, A. / Machkaoutsan, V. / De Vos, B. / Geenen, L. / Van Daele, B. / Loo, R. / Caymax, M. et al. | 2008
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Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloysMarkevich, V.P. / Dobaczewski, L. / Bonde Nielsen, K. / Litvinov, V.V. / Petukh, A.N. / Pokotilo, Yu.M. / Abrosimov, N.V. / Peaker, A.R. et al. | 2008
- 422
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Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrateUeda, Koji / Sadoh, Taizoh / Ando, Yuichiro / Jonishi, Takahumi / Narumi, Kazumasa / Maeda, Yoshihito / Miyao, Masanobu et al. | 2008
- 425
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Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 filmsUeda, Koji / Kumano, Mamoru / Sadoh, Taizoh / Miyao, Masanobu et al. | 2008
- 428
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Resonant magnetic scattering of polarized X-rays at the Mn 2p edge from Mn0.06Ge0.94 diluted magnetic semiconductorDe Padova, P. / Perfetti, P. / Quaresima, C. / Zema, N. / Grazioli, C. / Spezzani, C. / Testa, A.M. / Fiorani, D. / Olivieri, B. / Mariot, J.-M. et al. | 2008
- 430
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Low-temperature oriented growth in [CoPt/MgO]n multi-layerSadoh, T. / Kurosawa, M. / Kimura, M. / Ueda, K. / Koyanagi, M. / Miyao, M. et al. | 2008
- 434
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ALD growth, thermal treatments and characterisation of Al2O3 layersGhiraldelli, E. / Pelosi, C. / Gombia, E. / Chiavarotti, G. / Vanzetti, L. et al. | 2008
- 437
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Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectricsLee, S. / Seo, H. / Lucovsky, G. / Fleming, L.B. / Ulrich, M.D. / Lüning, J. et al. | 2008
- 441
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Structural investigation of the LaAlO3(110) surfaceMortada, Hussein / Derivaz, Mickael / Dentel, Didier / Bischoff, Jean-Luc et al. | 2008
- 444
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Optical and electrical properties of negatively charged aluminium oxynitride filmsJang, Kyungsoo / Jung, Sungwook / Lee, Jeoungin / Lee, Kwangsoo / Kim, Jaehong / Son, Hyukjoo / Yi, Junsin et al. | 2008
- 447
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Study of silicon/oxides interfaces by means of Si2p resonant photoemissionTallarida, Massimo / Schmeisser, Dieter et al. | 2008
- 450
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Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputteringTa, M.-T. / Briand, D. / Guhel, Y. / Bernard, J. / Pesant, J.C. / Boudart, B. et al. | 2008
- 453
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Ellipsometric analysis of mixed metal oxides thin filmsBuiu, O. / Davey, W. / Lu, Y. / Mitrovic, I.Z. / Hall, S. et al. | 2008
- 456
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Gate leakage properties in (Al2O3/HfO2/Al2O3) dielectric of MOS devicesAbdi-Ben Nasrallah, S. / Bouazra, A. / Poncet, A. / Said, M. et al. | 2008
- 459
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Chemical and optical profiling of ultra thin high-k dielectrics on siliconBernardini, S. / MacKenzie, M. / Buiu, O. / Bailey, P. / Noakes, T.C.Q. / Davey, W.M. / Hamilton, B. / Hall, S. et al. | 2008
- 462
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Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layerCheng, Xinhong / Song, Zhaorui / Xing, Yumei / Yu, Yuehui / Shen, Dashen et al. | 2008
- 465
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Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectricsSong, Zhaorui / Cheng, Xinhong / Zhang, Enxia / Xing, Yumei / Yu, Yuehui / Zhang, Zhengxuan / Wang, Xi / Shen, Dashen et al. | 2008
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Editorial Board| 2008
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Photo| 2008