Growth kinetics of non-planar substrates (Englisch)
Nationallizenz
- Neue Suche nach: Haider, Niaz
- Neue Suche nach: Wilby, Mark R.
- Neue Suche nach: Vvedensky, Dimitri D.
- Neue Suche nach: Haider, Niaz
- Neue Suche nach: Wilby, Mark R.
- Neue Suche nach: Vvedensky, Dimitri D.
In:
Journal of Crystal Growth
;
127
, 1-4
;
922-926
;
1993
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Growth kinetics of non-planar substrates
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Beteiligte:
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Erschienen in:Journal of Crystal Growth ; 127, 1-4 ; 922-926
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Verlag:
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Erscheinungsdatum:01.01.1993
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 127, Ausgabe 1-4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxySugimoto, M. / Ogura, I. / Saito, H. / Yasuda, A. / Kurihara, K. / Kosaka, H. / Numai, T. / Kasahara, K. et al. | 1993
- 5
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1.55 m buried ridge stripe laser diodes grown by gas molecular beam epitaxyBonnevie, D. / Poingt, F. / Le Gouezigou, L. / Guichardon, A. et al. | 1993
- 5
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1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxyBonnevie, D. / Poingt, F. / Le Gouézigou, L. / Guichardon, A. / Accard, A. / Simes, R. / Fernier, B. / Goldstein, L. et al. | 1993
- 9
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Substrate misorientation effects in AlGaInP lasers and crystals grown by gas source molecular beam epitaxyKikuchi, Akihiko / Kishino, Katsumi et al. | 1993
- 14
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In0.35Ga0.65P light-emitting diodes grown by gas-source MBEMasselink, W.Ted / Zachau, Martin et al. | 1993
- 19
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Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlatticesRalston, J.D. / Larkins, E.C. / Rothemund, W. / Esquivias, I. / Weisser, S. / Rosenzweig, J. / Fleissner, J. et al. | 1993
- 25
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Parametric investigation of InGaAs/InAlAs HEMTs grown by CBEMunns, G.O. / Sherwin, M.E. / Kwon, Y. / Brock, T. / Chen, W.L. / Pavlidis, D. / Haddad, G.I. et al. | 1993
- 29
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Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistorsYoh, Kanji / Kiyomi, Kazumasa / Yano, Mitsuaki / Inoue, Masataka et al. | 1993
- 36
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Optimized strained InxGa1−xAs structures for device applicationKlein, W. / Böhm, G. / Tränkle, G. / Weimann, G. et al. | 1993
- 41
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The fabrication of back-gated high electron mobility transistors — a novel approach using MBE regrowth on an in situ ion beam patterned epilayerLinfield, E.H. / Jones, G.A.C. / Ritchie, D.A. / Hamilton, A.R. / Iredale, N. et al. | 1993
- 46
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Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxyDotor, M.L. / Meléndez, J. / Huertas, P. / Mazuelas, A. / Garriga, M. / Golmayo, D. / Briones, F. et al. | 1993
- 50
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MBE growth of GaAs p-n junction LEDs on (111)A GaAs substrates using only silicon dopantFujita, K. / Shinoda, A. / Inai, M. / Yamamoto, T. / Fujii, M. / Lovell, D. / Takebe, T. / Kobayashi, K. et al. | 1993
- 54
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Uniform MBE growth of 2 inch diameter wafer for GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasersNagai, M. / Matsumoto, K. / Morishima, M. / Horie, H. / Niwata, Y. / Hayakawa, T. et al. | 1993
- 58
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Long term stability of MBE process in MMIC productionPao, Y.C. / Franklin, J. / Bechtel, N.G. et al. | 1993
- 62
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Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBELarkins, E.C. / Bender, G. / Schneider, H. / Ralston, J.D. / Wagner, J. / Rothemund, W. / Dischler, B. / Fleissner, J. / Koidl, P. et al. | 1993
- 68
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Realization of high performance doped-channel MISFETs in highly strained AlGaAs/InGaAs/AlGaAs based quantum wellsKaviani, Kian / Hu, Kezhong / Xie, Qianghua / Madhukar, Anupam et al. | 1993
- 73
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MBE-grown vertical silicon MOSFETs with sub-0.3 μm channel lengthsKiunke, W. / Hammerl, E. / Eisele, I. et al. | 1993
- 76
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Investigation of low temperature (LT) layers of GaAs grown by MBE: comparison of MESFET and HEMT performanceLagadas, M. / Tsagaraki, K. / Hatzopoulos, Z. / Christou, A. et al. | 1993
- 81
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High performance MBE of (In) GaAs/AlGaAs heterostructures for HEMTsBöhm, G. / Klein, W. / Röhr, T. / Tränkle, G. / Weimann, G. / Schnell, R.D. / Schleicher, L. et al. | 1993
- 85
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III–V on Si: heteroepitaxy versus lift-off techniquesDe Boeck, J. / Borghs, G. et al. | 1993
- 93
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Charged versus neutral interfaces in III–V/Ge quantum wellsSorba, L. / Biasio, G. / Bratina, G. / Nicolini, R. / Franciosi, A. et al. | 1993
- 98
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Effects of SiAsBeAs interface structure on the initial stages of GaAs MBE growth on Si(111)Maehashi, Kenzo / Hasegawa, Shigehiko / Nakashima, Hisao et al. | 1993
- 102
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MBE-GaAs on Si, comparison between two GaAs crystal orientations on vicinal Si(100) surfaceMei, X.B. / Huang, Q. / Zhou, J.M. et al. | 1993
- 107
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Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayerKawai, T. / Yonezu, H. / Yamauchi, Y. / Lopez, M. / Pak, K. / Kürner, W. et al. | 1993
- 112
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GaAs / AlGaAs pin MQW structures grown on patterned Si substratesWoodbridge, K. / Barnes, P. / Murray, R. / Roberts, C. / Parry, G. et al. | 1993
- 116
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GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substratesGonzález, Y. / González, L. / Briones, F. et al. | 1993
- 121
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Si-GaAs(001) superlattice structureSorba, L. / Bratina, G. / Franciosi, A. / Tapfer, L. / Scamarcio, G. / Spagnolo, V. / Migliori, A. / Merli, P. / Molinari, E. et al. | 1993
- 126
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Surface selective growth of GaInAsP heterostructures by metalorganic MBEHeinecke, Harald et al. | 1993
- 136
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Molecular beam epitaxy of nitride thin filmsPaisley, M.J. / Davis, R.F. et al. | 1993
- 143
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MOMBE growth of AlSb and AlGaSb using trimethylamine alaneOkuno, Y. / Asahi, H. / Liu, X.F. / Inoue, K. / Itani, Y. / Asami, K. / Gonda, S. et al. | 1993
- 148
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Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenideFarrell, T. / Armstrong, J.V. / Bullough, T.J. / Beanland, R. / Joyce, T.B. / Goodhew, P.J. et al. | 1993
- 152
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Mechanistic studies of the CBE growth of (100) GaAs using the new precursor tri-isopropylgalliumFreer, R.W. / Martin, T. / Lane, P.A. / Whitehouse, C.R. / Hogan, R. / Foord, J.S. / Jones, A.C. et al. | 1993
- 158
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Growth of β-FeSi2 on silicon substrates by chemical beam epitaxyCrumbaker, T.E. / Natoli, J.Y. / Berbezier, I. / Derrien, J. et al. | 1993
- 165
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Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxyMeier, H.P. / Broom, R.F. / Epperlein, P.M. / Hausser, S. / Jakubowicz, A. / Walter, W. et al. | 1993
- 169
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Selective area growth of InGaAsP/InP waveguide modulator structures by chemical beam epitaxyChiu, T.H. / Chen, Y. / Zucker, J. / Marshall, J.L. / Shunk, S. / Chu, S.N.G. et al. | 1993
- 175
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Growth of GaInAs(P)/InP heterostructures on nonplanar substrates using MOMBE (CBE)Baur, B. / Heinecke, H. / Schier, M. / Emeis, N. et al. | 1993
- 179
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AlGaAs/GaAs heterostructures for HEMT applications grown by chemical beam epitaxyRothfritz, H. / Müller, R. / Tränkle, G. / Kempter, R. / Plauth, J. / Weimann, G. et al. | 1993
- 184
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Growth of pseudomorphic InxGa1-xAs⧸GaPyAs1-y multiple quantum well structures on GaAs by gas source molecular beam epitaxyCunningham, J.E. / Goossen, K.W. / Jan, W. et al. | 1993
- 189
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The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wellsAntolini, A. / Francesio, L. / Gastaldi, L. / Genova, F. / Lamberti, C. / Lazzarini, L. / Papuzza, C. / Rigo, C. / Salviati, G. et al. | 1993
- 194
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Atomically controlled InGaAs/InP superlattices grown by gas source MEE (migration enhanced epitaxy)Asahi, Hajime / Kohara, Teruaki / Soni, Ravi Kant / Asami, Kumiko / Emura, Shuichi / Gonda, Shun-ichi et al. | 1993
- 199
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InP and InAsP/InP heterostructures grown on InP (111) B substrates by gas-source molecular beam epitaxyHou, H.Q. / Tu, C.W. et al. | 1993
- 204
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Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpeStrite, S. / Chandrasekhar, D. / Smith, David J. / Sariel, J. / Chen, H. / Teraguchi, N. / Morkoç, H. et al. | 1993
- 204
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Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytypeStrite, S. / Chandrasekhar, D. / Smith, D. J. / Sariel, J. et al. | 1993
- 209
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Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasersZhang, G. / Ovtchinnikov, A. / Pessa, M. et al. | 1993
- 213
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Layer-by-layer growth mechanism of AlxGa1-xP grown by gas-source MBEFujimori, Toshinari / Nagao, Satoru / Gotoh, Hideki et al. | 1993
- 217
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Growth of Ga0.29In0.71As0.61P0.39 (λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxyTappura, K. / Asonen, H. et al. | 1993
- 217
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Growth of Ga~0~.~2~9In~0~.~7~1As~0~.~6~1P~0~.~3~9 (lambda 1.3 m) on InP by gas source molecular beam epitaxyTappura, K. / Asonen, H. et al. | 1993
- 221
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CBE selective embedded growth for quasi-planar GaAs HBT applicationAlexandre, F. / Zerguine, D. / Launay, P. / Benchimol, J.L. / Etrillard, J. et al. | 1993
- 226
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The growth of InAlP using trimethyl amine alane by chemical beam epitaxyMunns, G.O. / Chen, W.L. / Sherwin, M.E. / Haddad, G.I. et al. | 1993
- 230
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Facet growth in selective area epitaxy of Inp by MOMBEMatz, R. / Heinecke, H. / Baur, B. / Primig, R. / Cremer, C. et al. | 1993
- 237
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Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y⧸InP grown by gas source molecular beam epitaxyPagnod-Rossiaux, Ph. / Renaud, M. / Gaborit, F. / Martin, B. et al. | 1993
- 241
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Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μmEmery, J.-Y. / Starck, C. / Goldstein, L. / Ponchet, A. / Rocher, A. et al. | 1993
- 246
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Growth of InAs/InP and InAsP/InP heterostructures by chemical beam epitaxyFreundlich, A. / Bensaoula, A.H. / Bensaoula, A. et al. | 1993
- 251
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Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molecular beam epitaxyTu, C. W. / Liang, B. W. / Hou, H. Q. et al. | 1993
- 251
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Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molelcular beam epitaxyTu, C.W. / Liang, B.W. / Hou, H.Q. et al. | 1993
- 255
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Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphineGarcia, J.Ch. / Regreny, Ph. / Delage, S.L. / Blanck, H. / Hirtz, J.P. et al. | 1993
- 258
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InGaAs/InP strained layer quantum wells grown by molecular beam epitaxyLoualiche, S. / Le Corre, A. / Godefroy, A. / Clerot, F. / Lecrosnier, D. / Poudoulec, A. / Salaun, S. et al. | 1993
- 261
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Electrical properties of P-rich InP grown by gas source MBEGarcia, J.Ch. / Bourgoin, J.C. / Claverie, A. et al. | 1993
- 265
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Beam equivalent pressure measurements in chemical beam epitaxyJoyce, T.B. / Bullough, T.J. et al. | 1993
- 270
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Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structuresMadella, M. / Bosacchi, A. / Franchi, S. / Allegri, P. / Avanzini, V. et al. | 1993
- 274
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Characterization of AlAs/GaAs ultrathin-layer superlattices grown by migration enhanced epitaxy at low temperaturesYano, Mitsuaki / Yamamoto, Kazuhiko / Masahara, Kou / Inoue, Masataka et al. | 1993
- 279
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Recent developments in the MBE growth of wide bandgap II – VI semiconductors for laser diodes and LEDsQiu, J. / Cheng, H. / DePuydt, J.M. / Haase, M.A. et al. | 1993
- 287
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Blue and blue/green laser diodes and LED-based display devicesXie, W. / Grillo, D.C. / Kobayashi, M. / He, L. / Gunshor, R.L. / Jeon, H. / Ding, J. / Nurmikko, A.V. / Hua, G.C. / Otsuka, N. et al. | 1993
- 291
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HgCdTe double heterostructure for infrared injection laserMillion, A. / Colin, T. / Ferret, P. / Zanatta, J.P. / Bouchut, P. / Destéfanis, G.L. / Bablet, J. et al. | 1993
- 296
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CdTe/InSb/α-Sn heterostructures grown by molecular beam epitaxyLibatique, Nathaniel / Sasaki, Atsushi / Choi, Dukuraku / Wada, Shinichi / Rastogi, Alok C. / Kimata, Morihiko / Kaneko, Kazuhiko / Takashima, Masaki et al. | 1993
- 302
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MBE of high mobility PbTe films and PbTe/Pb1-xEuxTe heterostructuresSpringholz, G. / Bauer, G. / Ihninger, G. et al. | 1993
- 308
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Role of the initial growth mode on the dislocation structure in MBE grown ZnSe/GaAs(100)Guha, S. / Munekata, H. / Chang, L.L. / Tang, W.C. et al. | 1993
- 314
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Low temperature molecular beam epitaxial growth of ZnS/GaAs(001) by using elemental sulfur sourceYoneta, Minoru / Ohishi, Masakazu / Saito, Hiroshi / Hamasaki, Tetsuya et al. | 1993
- 318
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Indium doping of (001), (111) and (211) CdTe layers grown by molecular beam epitaxyTatarenko, S. / Bassani, F. / Saminadayar, K. / Cox, R.T. / Jouneau, P.H. / Magnea, N. et al. | 1993
- 323
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Effect of laser on MOMBE of ZnSe using gaseous and solid sourcesCoronado, C.A. / Ho, E. / Kolodziejski, L.A. et al. | 1993
- 327
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Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSeSimpson, J. / Wang, S.Y. / Hauksson, I. / Stewart, H. / Adams, S.J.A. / Prior, K.A. / Cavenett, B.C. et al. | 1993
- 331
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Molecular beam epitaxial growth and characterization of (100) HgSe on GaAsBecker, C.R. / He, L. / Einfeldt, S. / Wu, Y.S. / Lérondel, G. / Heinke, H. / Oehling, S. / Bicknell-Tassius, R.N. / Landwehr, G. et al. | 1993
- 335
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High-temperature blue lasing in photopumped ZnSSe-ZnMgSSe double heterostructuresOkuyama, Hiroyuki / Morinaga, Yuko / Akimoto, Katsuhiro et al. | 1993
- 339
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Formation of the ZnTe/(001) GaAs interfaceTatarenko, S. / Cibert, J. / Saminadayar, K. / Jouneau, P.H. / Etgens, V.H. / Sauvage-Simkin, M. / Pinchaux, R. et al. | 1993
- 343
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Light irradiation effects on impurity doping in ZnSe by photoassisted molecular beam epitaxyMatsumura, Nobuo / Senga, Ken-ichi / Yamashita, Yoshihiro / Ichikawa, Susumu / Saraie, Junji et al. | 1993
- 347
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MBE growth and characterization of (Zn, Mn)Se/ZnSe and MnSe/ZnSe structures on (001) GaAsHoffmann, N. / Griesche, J. / Heimbrodt, W. / Goede, O. / Jacobs, K. et al. | 1993
- 352
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Growth and characterization of CdTe/ZnTe buffer layers on GaAs substratesParthier, L. / Hoffmann, N. / Teubner, T. / Rossmann, H. / Wilde, L. / Henneberger, F. / Jacobs, K. et al. | 1993
- 356
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Effects of ZnSe buffer layer on optical properties of ZnTe grown on GaAsIida, F. / Imai, K. / Kumazaki, K. et al. | 1993
- 361
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Photoluminescence of ZnSe-ZnTe strained layer superlatticesOzaki, H. / Imai, K. / Kumazaki, K. et al. | 1993
- 365
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Growth and properties of In- and As-doped HgCdTe by MBEWu, Owen K. / Jamba, Doug N. / Kamath, G.Sanjiv et al. | 1993
- 371
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CdTe/CdMnTe GRINSCH structures for compact lasers in the visible regionFeuillet, G. / Jouneau, P.H. / Cibert, J. / Bodin, C. / Dang, Le Si / Molva, E. / Accomo, R. et al. | 1993
- 375
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CdHgTe Bragg reflectors grown by molecular beam epitaxyBleuse, J. / Magnea, N. / Jouneau, P.H. / Mariette, H. et al. | 1993
- 379
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Comparison of the p-type dopants K and N in ZnSeStewart, H. / Simpson, J. / Wang, S.Y. / Hauksson, I. / Adams, S.J.A. / Prior, K.A. / Cavenett, B.C. et al. | 1993
- 383
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Undoped and Sb-doped ZnSe-based II–VI superlattices grown by molecular beam epitaxyShen, Aidong / Xu, Liang / Wang, Hailong / Chen, Yunliang / Wang, Zhijiang / Li, A.Z. et al. | 1993
- 387
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ZnSe-GaAs heterojunction parametersBratina, G. / Nicolini, R. / Sorba, L. / Vanzetti, L. / Mula, Guido / Yu, X. / Franciosi, A. et al. | 1993
- 392
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Effect of surfactants on surface migration in Si MBESakamoto, Kunihiro / Miki, Kazushi / Sakamoto, Tsunenori / Matsuhata, Hirohumi / Kyoya, Ken'ichi et al. | 1993
- 396
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Surfactant-mediated growth of germanium on Si(100) by MBE and SPEOsten, H.J. / Klatt, J. / Lippert, G. / Bugiel, E. et al. | 1993
- 401
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Is low temperature growth the solution to abrupt Si⧸Si1-xGex interface formation?Fukatsu, S. / Usami, N. / Fujita, K. / Yaguchi, H. / Shiraki, Y. / Ito, R. et al. | 1993
- 406
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Investigation of the growth technique dependence on the optical properties of Si1-xGex alloy layersArbet-Engels, V. / Tijero, J.M.G. / Manissadjian, A. / Wang, K.L. / Higgs, V. et al. | 1993
- 411
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Growth and photoluminescence characterization of pseudomorphic SiGe single quantum wellsSchäffler, F. / Wachter, M. / Herzog, H.-J. / Thonke, K. / Sauer, R. et al. | 1993
- 416
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Intersubband absorption in n-type Si⧸Si1−xGex multiple quantum well structures formed by Sb segregant-assisted growthFujita, K. / Fukatsu, S. / Shiraki, Y. / Yaguchi, H. / Ito, R. et al. | 1993
- 421
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High mobility two-dimensional electron gases in Si⧸Si1-xGex heterostructures grown by MBETöbben, D. / Schäffler, F. / Besson, M. / Engelhardt, C.M. / Zrenner, A. / Abstreiter, G. / Gornik, E. et al. | 1993
- 425
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Si1-x-yGexCy growth and properties of the ternary systemPowell, A.R. / Eberl, K. / Ek, B.A. / Iyer, S.S. et al. | 1993
- 430
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Si1-xGex⧸sapphire structure fabricated by molecular beam epitaxyHanafusa, H. / Taguchi, E. / Ogata, H. / Yoneda, K. et al. | 1993
- 435
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Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlatticesYu, E.T. / Johnson, M.B. / Kesan, V.P. / Powell, A.R. / Halbout, J.-M. / Iyer, S.S. et al. | 1993
- 440
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Sn and Sb segregation and their possible use as surfactant for short-period Si/Ge superlatticesDondl, W. / Lütjering, G. / Wegscheider, W. / Wilhelm, J. / Schorer, R. / Abstreiter, G. et al. | 1993
- 443
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Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown Si1-xGex quantum wellsBrunner, J. / Menczigar, U. / Gail, M. / Friess, E. / Abstreiter, G. et al. | 1993
- 447
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Nanometer scale local epitaxy with silicon MBEHammerl, E. / Wittmann, F. / Eisele, I. / Heinzel, T. / Kühn, S. / Lorenz, H. / Kotthaus, J.P. et al. | 1993
- 451
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On optimum design of dislocation filters for reduction of misfit dislocationsMaeda, K. / Yamashita, Y. / Fujita, K. / Fukatsu, S. / Suzuki, K. / Mera, Y. / Shiraki, Y. et al. | 1993
- 456
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An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBEZhou, Guoliang / Zhang, Xiang-jiu / Sheng, Chi / Wang, Xun et al. | 1993
- 461
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Investigation of surface reconstruction domain behaviour during Si-GSMBEOhtani, N. / Mokler, S.M. / Zhang, J. / Joyce, B.A. et al. | 1993
- 467
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Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4Mokler, S.M. / Ohtani, N. / Xie, M.H. / Zhang, X. / Joyce, B.A. et al. | 1993
- 472
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A study of broad band photoluminescence from Si1-xGex⧸Si superlatticesSteiner, T.D. / Hengehold, R.L. / Yeo, Y.K. / Godbey, D.J. / Thompson, P.E. / Pomrenke, Gernot S. et al. | 1993
- 476
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In situ cleaning of Si surfaces by UV/ozoneLippert, G. / Osten, H.J. et al. | 1993
- 479
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Incorporation and diffusion kinetics during epitaxial growth on Ge(111)Yokotsuka, T. / Wilby, M.R. / Vvedensky, D.D. / Kawamura, T. / Fukutani, K. / Ino, S. et al. | 1993
- 484
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The influence of Cl2 on Si1 - xGex selective epitaxial growth and B-doping properties by UHV-CVDAketagawa, Ken-ichi / Tatsumi, Toru / Sakai, Junro et al. | 1993
- 489
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Intense photoluminescence from strained Si1-xGex⧸Si quantum well structuresFukatsu, S. / Usami, N. / Yoshida, H. / Fujiwara, A. / Takahashi, Y. / Shiraki, Y. / Ito, R. et al. | 1993
- 494
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As/Ga ratio dependence of Ga adatom incorporation kinetics at steps on vicinal GaAs(001) surfacesShitara, T. / Zhang, J. / Neave, J.H. / Joyce, B.A. et al. | 1993
- 499
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Two-dimensional arsenic-precipitate structures in GaAsMelloch, M.R. / Chang, C.L. / Otsuka, N. / Mahalingam, K. / Woodall, J.M. / Kirchner, P.D. et al. | 1993
- 503
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Determination of the Sb composition profile in MBE-grown GaSb/GaAs structures by high-resolution X-ray diffractometryBrandt, O. / Tournié, E. / Tapfer, L. / Ploog, K. et al. | 1993
- 508
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Continuous-space Monte Carlo simulations of epitaxial growthKew, James / Wilby, Mark R. / Vvedensky, Dimitri D. et al. | 1993
- 513
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Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAsBrandt, O. / Tapfer, L. / Ploog, K. / Bierwolf, R. / Hohenstein, M. et al. | 1993
- 515
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Heavily Si or Be doped MBE GaAs grown at low temperaturesMcQuaid, S.A. / Newman, R.C. / Missous, M. / O'Hagan, S. et al. | 1993
- 519
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Low-temperature MBE of AlGaInAs lattice-matched to InPKünzel, H. / Böttcher, J. / Gibis, R. / Hoenow, H. / Heedt, C. et al. | 1993
- 523
-
Desorption mass spectrometric control of composition during MBE growth of AlGaAsEvans, K.R. / Kaspi, R. / Jones, C.R. / Sherriff, R.E. / Jogai, V. / Reynolds, D.C. et al. | 1993
- 528
-
Local Mn structures in III—V diluted magnetic semiconductor (In,Mn)AsMunekata, H. / Chang, L.L. / Krol, A. / Soo, Y.L. / Huang, S. / Ming, Z.H. / Kao, Y.H. et al. | 1993
- 532
-
Effects of growth temperature and substrate misorientation in InGaAs/GaAs strained quantum wells grown by MBEHayakawa, Toshiro / Nagai, Masaharu / Horie, Hideyoshi / Niwata, Yoshihisa et al. | 1993
- 536
-
Monolayer scale study of segregation effects in InAs/GaAs heterostructuresGérard, Jean-Michel / d'Anterroches, Cécile / Marzin, Jean-Yves et al. | 1993
- 541
-
MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structuresLarkins, E.C. / Rothemund, W. / Maier, M. / Wang, Z.M. / Ralston, J.D. / Jantz, W. et al. | 1993
- 546
-
Surface segregation of In atoms and its influence on the quantized levels in InGaAs/GaAs quantum wellsMuraki, K. / Fukatsu, S. / Shiraki, Y. / Ito, R. et al. | 1993
- 550
-
Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBENagle, J. / Landesman, J.P. / Larive, M. / Mottet, C. / Bois, P. et al. | 1993
- 555
-
Photoluminescence and X-ray diffraction studies of MBE-grown compressively strained InGaAs and InGaAlAs quantum wells for 1.55 μm laser diode applicationsChoi, Woo-Young / Fonstad, Clifton G. et al. | 1993
- 560
-
Non-lattice matched growth of In~xGa~1~-~xAs (0.53 < x < 0.80) on InPFischer-Colbrie, A. / Jacowitz, R. D. / Ast, D. G. et al. | 1993
- 560
-
Non-lattice matched growth of InxGa1-xAs (0.53<x<0.80) on InPFischer-Colbrie, A. / Jacowitz, R.D. / Ast, D.G. et al. | 1993
- 566
-
The behavior of dopant incorporation and internal strain in AlxGa1−xAs0.03Sb0.97 grown by molecular beam epitaxyLi, A.Z. / Wang, J.X. / Zheng, Y.L. / Ru, G.P. / Bi, W.G. / Chen, Z.X. / Zhu, N.C. et al. | 1993
- 570
-
Transport parameters in pseudomorphic and strain-relaxed InGaAs heterojunction grown by MBE on misoriented (100) GaAs substratesFernandez, J. M. / Chen, J. / Wieder, H. H. et al. | 1993
- 570
-
Transport parameters in pseudomorphic and strain-relaxed InGaAs heterojunctions grown by MBE on misoriented (100) GaAs substratesFernández, J.M. / Chen, Jianhui / Wieder, H.H. et al. | 1993
- 575
-
Temperature dependence of the minimum V/III ratio for the growth of InxGa1-xAsRiechert, H. / Averbeck, R. / Bernklau, D. et al. | 1993
- 579
-
Optical studies of the growth of single monolayer wide InAs quantum wells on GaAs by MBEDosanjh, S.S. / Dawson, P. / Fahy, M.R. / Joyce, B.A. / Stradling, R.A. / Murray, R. et al. | 1993
- 584
-
Anisotropic relaxation of misfit strain in GaAs films grown on GAP (001)Nomura, Takashi / Ishikawa, Kenji / Murakami, Kenji / Hagino, Minoru et al. | 1993
- 589
-
InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFETKraus, J. / Meschede, H. / Liu, Q. / Prost, W. / Tegude, F.J. / Lakner, H. / Kubalek, E. et al. | 1993
- 592
-
Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxyProietti, M.G. / Martelli, F. / Turchini, S. / Alagna, L. / Bruni, M.R. / Prosperi, T. / Simeone, M.G. / Garcia, J. et al. | 1993
- 596
-
Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopyMazuelas, A. / Molina, S.I. / Aragón, G. / Meléndez, J. / Dotor, M.L. / Huertas, P. / Briones, F. et al. | 1993
- 601
-
The growth and physical properties of high quality pseudomorphic InxGa1-xAs HEMT structuresMace, D.R. / Grimshaw, M.P. / Ritchie, D.A. / Churchill, A.C. / Pepper, M. / Jones, G.A.C. et al. | 1993
- 606
-
Pseudomorphic InGaAs/GaAs and GaAs/A1GaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applicationsDroopad, Ravi / Gerber, Don S. / Choi, Calvin / Maracas, George N. et al. | 1993
- 606
-
Pseudomorphic InGaAs/GaAs and GaAs/AlGaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applicationsDroopad, R. / Gerber, D. S. / Choi, C. / Maracas, G. N. et al. | 1993
- 611
-
Growth and characterization of A1As/GaInAs multiple quantum wellsRuiz, A. / Giannini, C. / Tapfer, L. / Ploog, K. / Alonso, M.I. / Armelles, G. / Garriga, M. / Castrillo, P. et al. | 1993
- 611
-
Growth and characterization of AlAs/GaInAs multiple quantum wellsRuiz, A. / Giannini, C. / Tapfer, L. / Ploog, K. et al. | 1993
- 616
-
Determination of In composition in molecular beam epitaxy grown InxGa1-xAs/GaAs heterostructuresWang, S.M. / Olsson, E. / Treideris, G. / Andersson, T.G. et al. | 1993
- 619
-
(Ga0.22In0.78As)m⧸(Ga0.22In0.78P)m superlattices grown by atomic-layer molecular beam epitaxy on InPDotor, M.L. / Golmayo, D. / Briones, F. et al. | 1993
- 623
-
Structural and optical characterization of alternately strained GaAs/GaP/GaAs/InP superlattices grown by atomic layer molecular beam epitaxyMazuelas, A. / Meléndez, J. / Domínguez, P.S. / Garriga, M. / Ballesteros, C. / Gerthsen, D. / Briones, F. et al. | 1993
- 627
-
Epitaxial growth and homoepitaxy of Pt(110) and Cu(110) on SrTiO3(110)Harp, G.R. / Farrow, R.F.C. / Marks, R.F. / Vazquez, J.E. et al. | 1993
- 634
-
Structural and electronic properties of pseudomorphic FeSi1+x films on Si(111)Onda, N. / Sirringhaus, H. / Müller, E. / von Känel, H. et al. | 1993
- 638
-
Epitaxial growth and characterization of lattice-matched GaAs⧸Scx(Yb, Er)1-xAs⧸GaAs heterostructures and [Sc0.2Yb0.8As, Sc0.3Er0.7As] superlatticesGuivarc'h, A. / Guenais, B. / Ballini, Y. / Auvray, P. / Caulet, J. / Minier, M. / Dupas, G. / Ropars, G. / Regreny, A. / Guérin, R. et al. | 1993
- 643
-
Structural characterization of Nb on sapphire as a buffer layer for MBE growthReimer, P.M. / Zabel, H. / Flynn, C.P. / Dura, J.A. et al. | 1993
- 646
-
Pseudo-1D NiAl single-crystal growth on (Al,Ga)As by molecular beam epitaxySano, Naokatsu / Kamigaki, Kousei / Ishida, Masaya / Terauchi, Hikaru et al. | 1993
- 650
-
MBE growth of ferromagnetic (Mn,Ni)Al thin films on AlAs/GaAsHarbison, J.P. / Sands, T. / De Boeck, J. / Cheeks, T.L. / Miceli, P. / Tanaka, M. / Florez, L.T. / Wilkens, B.J. / Gilchrist, H.L. / Keramidas, V.G. et al. | 1993
- 655
-
Investigation of MBE-grown high Tc films by RHEED, atomic force microscopy and X-ray diffractionWang, H.S. / Eissler, D. / Dietsche, W. / Fischer, A. / Ploog, K. et al. | 1993
- 659
-
Application of epitaxial CoSi2⧸Si⧸CoSi2 heterostructures to tunable Schottky-barrier detectorsSchwarz, C. / Schärer, U. / Sutter, P. / Stalder, R. / Onda, N. / von Känel, H. et al. | 1993
- 663
-
Interaction of molecular beams of KBr with (100) surfaces of KClDabringhaus, H. / Haag, M. et al. | 1993
- 668
-
Strain relaxation morphologies of IIa-fluorides and lead-chalcogenide layers on Si(111)Zogg, H. / Maissen, C. / Blunier, S. / Teodoropol, S. / Overney, R.M. / Richmond, T. / Haefke, H. et al. | 1993
- 672
-
MBE growth of InAs and InSb on EuBa2Cu3O7-y superconducting filmsWatanabe, Yoshio / Maeda, Fumihiko / Oshima, Masaharu / Michikami, Osamu et al. | 1993
- 678
-
A strain-relieve transition in epitaxial growth of metals on Si(111) (7 x 7)Bootsma, T. I. M. / Hibma, T. et al. | 1993
- 678
-
A strain-relieve transition in epitaxial growth of metals on Si(111)(7 × 7)Bootsma, T.I.M. / Hibma, T. et al. | 1993
- 682
-
Epitaxial growth of Co films and Co/Cu superlattices on sapphire substrates with and without buffer layersBröhl, K. / Bödeker, P. / Metoki, N. / Stierle, A. / Zabel, H. et al. | 1993
- 686
-
Properties and applications of carbon-doped GaAs and AlxGa1-xAs layers grown by MBE with a pyrolytic graphite filamentMalik, R.J. / Nagle, J. / Micovic, M. / Ryan, R.W. / Harris, T. / Geva, M. / Hopkins, L.C. / Vandenberg, J. / Hull, R. / Kopf, R.F. et al. | 1993
- 690
-
Carbon doping of GaAs for heterojunction bipolar transistors: a comparison between MBE and CBEBenchimol, J.L. / Alexandre, F. / Jourdan, N. / Pougnet, A.M. / Mellet, R. / Sermage, B. / Héliot, F. / Dubon-Chevallier, C. et al. | 1993
- 695
-
Peak-to-valley ratio of 130:1 at 1 K in AlGaAs/GaAs/AlGaAs tunneling structures: evidence for suppressed dopant segregationCunningham, J.E. / Goldman, V.J. / Su, B. / Jan, W.Y. et al. | 1993
- 700
-
Electronic properties of multiple Si δ-doped GaAs layers grown by molecular beam epitaxy and migration-enhanced epitaxyShibili, S.M. / Henriques, A.B. / Mendonça, C.A.C. / da Silva, E.C.F. / Meneses, E.A. / Scolfaro, L.M.R. / Leite, J.R. et al. | 1993
- 703
-
The impact of lattice dilation on deep states in MBE GaAsPoole, I. / Efeoglu, H. / Singer, K.E. / Peaker, A.R. et al. | 1993
- 707
-
Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAsElsaesser, D.W. / Colon, J.E. / Yeo, Y.K. / Hengehold, R.L. / Evans, K.R. / Solomon, J.S. et al. | 1993
- 711
-
Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon sourceTokumitsu, E. / Shirahama, M. / Nagao, K. / Nozaki, S. / Konagai, M. / Takahashi, K. et al. | 1993
- 716
-
On the potential of δ-doping for AlInAs/GaInAs HEMTs grown by MBEPassenberg, W. / Bach, H.-G. / Böttcher, J. / Künzel, H. et al. | 1993
- 720
-
Comparison of Si δ-doping with homogeneous doping in GaAsKöhler, K. / Ganser, P. / Maier, M. et al. | 1993
- 724
-
Structural and electronic properties of GaAs : C and AlxGa1- xAs : C grown by solid-source molecular beam epitaxyGiannini, C. / Brandt, O. / Fischer, A. / Ploog, K.H. / Tapfer, L. et al. | 1993
- 728
-
Electrical properties of MBE grown layers of AlGaAsSb and the effects of proton implantation and hydrogen plasma treatmentPolyakov, A.Y. / Eglash, S.J. / Milnes, A.G. / Ye, M. / Pearton, S.J. / Wilson, R.G. et al. | 1993
- 732
-
Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growthThompson, J.H. / Jones, G.A.C. / Ritchie, D.A. / Linfield, E.H. / Houlton, M. / Smith, G.W. / Whitehouse, C.R. et al. | 1993
- 737
-
The effect of Si planar doping on DX centers in Al0.26Ga0.74AsSolomon, G.S. / Roos, G. / Harris, J.S. Jr. et al. | 1993
- 742
-
Applications of MBE-grown heterostructures and quantum wells in fundamental research and in advanced semiconductor devicesWeisbuch, C. et al. | 1993
- 752
-
“Quasi-direct” narrow GaSb-AlSb (100) quantum wellsBrar, Berinder / Kroemer, Herbert / English, John et al. | 1993
- 755
-
Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxyReithmaier, J.-P. / Hausser, S. / Meier, H.P. / Walter, W. et al. | 1993
- 759
-
1.3 μm Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layerLord, S.M. / Pezeshki, B. / Kim, S.D. / Harris, J.S. Jr. et al. | 1993
- 765
-
Virtual-surfactant epitaxy of InAs quantum wellsTournié, E. / Brandt, O. / Giannini, C. / Ploog, K.H. / Hohenstein, M. et al. | 1993
- 770
-
High mobility and high sheet electron density in selectively doped InAlAs/InGaAs heterostructures grown by MBE on GaAsMishima, T. / Tanimoto, T. / Kudoh, M. / Takahama, M. et al. | 1993
- 770
-
High mobility and high sheet electron density in selectivity doped InAlAs/InGaAs heterostructures grown by MBE on GaAsMishima, T. / Tanimoto, T. / Kudoh, M. / Takahama, M. et al. | 1993
- 774
-
Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxyLaruelle, F. / Bloch, J. et al. | 1993
- 777
-
Molecular beam epitaxial growth of Sb/GaSb multilayer structures: potential application as a narrow bandgap systemGolding, T.D. / Dura, J.A. / Wang, W.C. / Zborowski, J.T. / Vigliante, A. / Chen, H.C. / Meyer, J.R. et al. | 1993
- 783
-
MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAs quantum wellsNoda, T. / Fahy, M.R. / Matsusue, T. / Joyce, B.A. / Sakaki, H. et al. | 1993
- 788
-
Surface relaxation kinetics and growth interruption effects in GaAs/AlAs single quantum wellsYoshinaga, A. / Mookherjee, P. / Murray, R. / Neave, J.H. / Joyce, B.A. et al. | 1993
- 793
-
250 Å spacer GaAs-AlGaAs two-dimensional electron gas (2DEG) structures with mobilities in excess of 3 × 106 cm2 V-1 s-1 at 4 KHolland, M.C. / Kean, A.H. / Stanley, C.R. et al. | 1993
- 793
-
250 spacer GaAs-AlGaAs two-dimensional electron gas (2DEG) structures with mobilities in excess of 3 x 10^6 cm^2 V^-^1 s^-^1 at 4 KHolland, M. C. / Kean, A. H. / Stanley, C. R. et al. | 1993
- 798
-
Growth and characterization of Be modulation doped wide parabolic GaAs⧸AlxGa1-xAs wellsHopkins, P.F. / Campman, K.L. / Gossard, A.C. et al. | 1993
- 803
-
Characteristics of in-situ deposited Si3N4⧸Si⧸In0.53Ga0.47As metal-insulator-semiconductor structuresMui, D.S.L. / Demirel, A.L. / Strite, S. / Wang, Z. / Reed, J. / Biswas, D. / Morkoç, H. et al. | 1993
- 807
-
Raman scattering analysis of InAs/GaSb ultrathin-layer superlattices grown by molecular beam epitaxyYano, Mitsuaki / Furuse, Hiroshi / Iwai, Yoshio / Yoh, Kanji / Inoue, Masataka et al. | 1993
- 812
-
Tilted superlattice composition profile measured by photoluminescence and RamanJohnson, F.G. / Olmsted, B.L. / Chen, Samuel / Wicks, G.W. et al. | 1993
- 816
-
Structural properties of Ga~xIn~1~-~xAs/Al~yIn~1~-~yAs multiple layers grown on InP substrates by molecular beam epitaxyZhang, Y. H. / Tapfer, L. / Lu, G. H. / Ploog, K. et al. | 1993
- 816
-
Structural properties of GaxIn1−xAs⧸AlyIn1−y As multiple layersZhang, Y.H. / Tapfer, L. / Lu, G.H. / Ploog, K. et al. | 1993
- 821
-
Non-equivalence of direct and reverse interfaces in AlAs-GaAs superlattice structures as evidenced by X-ray diffractionAuvray, P. / Baudet, M. / Deparis, C. / Massies, J. et al. | 1993
- 826
-
Electron distribution and electrical properties of InAs quantum wellsYoh, Kanji / Moriuchi, Toshiaki / Inoue, Masataka et al. | 1993
- 831
-
Growth of ultra-thin AlAs layers on GaAs (001) vicinal surfaces: a search for lateral confinementChastaingt, B. / Deparis, C. / Neu, G. / Leroux, M. / Grandjean, N. / Massies, J. et al. | 1993
- 836
-
Photocurrent and Raman spectroscopy of Stark ladder superlattices with single monolayer AlAs barriersSchneider, H. / Wagner, J. / Ploog, K. / Fischer, A. / Fujiwara, K. et al. | 1993
- 841
-
Substrate temperature dependence of the minority carrier lifetime in (AlGa)As/GaAs MQWs grown with As2 and As4Cheng, T.S. / Dawson, P. / Lacklison, D.E. / Foxon, C.T. / Orton, J.W. / Hughes, O.H. / Henini, M. et al. | 1993
- 845
-
Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodesNguyen, Chanh / Kroemer, Herbert / Hu, Evelyn L. / English, John H. et al. | 1993
- 849
-
Cleaved edge overgrowth for quantum wire fabricationPfeiffer, Loren / Störmer, H.L. / Baldwin, K.W. / West, K.W. / Goñi, A.R. / Pinczuk, A. / Ashoori, R.C. / Dignam, M.M. / Wegscheider, W. et al. | 1993
- 858
-
Surface structure of high- and low-index GaAs surfaces: direct formation of quantum-dot and quantum-wire structuresNötzel, R. / Däweritz, L. / Ploog, K. et al. | 1993
- 863
-
One-step in-situ quantum dots via molecular beam epitaxyRajkumar, K.C. / Kaviani, K. / Chen, P. / Madhukar, A. / Rammohan, K. / Rich, D.H. et al. | 1993
- 865
-
Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (111)A GaAs by molecular beam epitaxyYamamoto, T. / Inai, M. / Takebe, T. / Fujii, M. / Kobayashi, K. et al. | 1993
- 871
-
Incorporation of silicon during MBE growth of GaAs on (111)A substratesFahy, M.R. / Neave, J.H. / Ashwin, M.J. / Murray, R. / Newman, R.C. / Joyce, B.A. / Kadoya, Y. / Sakaki, H. et al. | 1993
- 877
-
Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber systemKadoya, Y. / Noge, H. / Kano, H. / Sakaki, H. et al. | 1993
- 881
-
Morphology and optical properties of strained InGaAs quantum wiresMirin, R. / Krishnamurthy, M. / Tan, I.-H. / Bowers, J.E. / Gossard, A.C. / Hu, E.L. et al. | 1993
- 887
-
MBE regrowth with hydrogen cleaning and its application for the fabrication of surface tunnel transistorsBaba, Toshio / Uemura, Tetsuya / Mizuta, Masashi et al. | 1993
- 892
-
Selective InAlAs/InGaAs MBE growth for high frequency OEIC applicationsPao, Y.C. / Franklin, J. / Yuen, C. et al. | 1993
- 896
-
Selectively masked MBE regrowthWu, X. / Gulden, K.H. / Thomas, M. / Wilson, G. / Walker, J. / Döhler, G.H. / Whinnery, J.R. / Smith, J.S. et al. | 1993
- 900
-
Formation of multiple quantum wires by strain-induced lateral-layer ordering processPearah, P.J. / Chen, A.C. / Moy, A.M. / Hsieh, K.C. / Cheng, K.Y. et al. | 1993
- 904
-
Growth of (Al,Ga)As structures on (110)-GaAs by MBEKean, A.H. / Holland, M.C. / Stanley, C.R. et al. | 1993
- 908
-
Observation of quasi-periodic facet formation during high temperature growth of AlAs and AlAs/GaAs superlatticesMirin, Richard / Krishnamurthy, Mohan / Ibbetson, James / English, John / Gossard, Arthur et al. | 1993
- 913
-
The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studiesWoolf, D.A. / Williams, J.P. / Westwood, D.I. / Sobiesierski, Z. / Aubrey, J.E. / Williams, R.H. et al. | 1993
- 918
-
The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth studyHooper, S.E. / Westwood, D.I. / Woolf, D.A. / Williams, R.H. et al. | 1993
- 922
-
Growth kinetics of non-planar substratesHaider, Niaz / Wilby, Mark R. / Vvedensky, Dimitri D. et al. | 1993
- 922
-
Growth kinetics on non-planar substratesHaider, N. / Wilby, M. R. / Vvedensky, D. D. et al. | 1993
- 927
-
Growth of [211]-oriented InAs/GaAs heterostructuresIlg, Matthias / Brandt, Oliver / Nötzel, Richard / Ploog, Klaus et al. | 1993
- 932
-
Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxyShen, X.Q. / Tanaka, M. / Nishinaga, T. et al. | 1993
- 937
-
Study of facet generation during MBE of GaAs on (111)A substrates patterned with ridge-type trianglesTakebe, T. / Fujii, M. / Yamamoto, T. / Fujita, K. / Kobayashi, K. et al. | 1993
- 942
-
Real-time observations of III-V growth on patterned substrates by μ-RHEEDIsu, Toshiro / Morishita, Yoshitaka / Goto, Shigeo / Nomura, Yasuhiko / Katayama, Yoshifumi et al. | 1993
- 949
-
RHEED studies of steps, islanding and faceting on singular, vicinal and high-index surfacesDäweritz, L. et al. | 1993
- 956
-
In-situ microscopy of MBE growth of GaAs and related materialsInoue, N. / Tanimoto, M. / Kanisawa, K. / Hirono, S. / Osaka, J. / Homma, Y. et al. | 1993
- 962
-
Scanning tunneling microscopy observation of straight step-edge formation on highly misoriented GaAs (001) surfacesOhkouchi, Shunsuke / Tanaka, Ichiro / Ikoma, Nobuyuki et al. | 1993
- 966
-
Real-time laser-light scattering studies of surface topography development during GaAs MBE growthSmith, G.W. / Pidduck, A.J. / Whitehouse, C.R. / Glasper, J.L. / Spowart, J. et al. | 1993
- 972
-
In-situ doping and composition monitoring for molecular beam epitaxy using mass spectroscopy of recoiled ions (MSRI)Waters, K. / Bensaoula, A. / Schultz, A. / Eipers-Smith, K. / Freundlich, A. et al. | 1993
- 976
-
Phase transition on III-V compound semiconductor surfaces observed by an improved RHEED techniqueYamaguchi, Hiroshi / Horikoshi, Yoshiji et al. | 1993
- 981
-
High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperatureGérard, Jean-Michel et al. | 1993
- 986
-
Comparative study of molecular beam injection systems for gas source molecular beam epitaxyScheinowitz, D.A. / Trommel, J. / Werner, K. / Radelaar, S. / Balk, P. et al. | 1993
- 990
-
Dopant evaporation sources for molecular beam epitaxyWalker, J.F. / Micovic, M. / Carnera, A. / Gasparotto, A. et al. | 1993
- 995
-
On-site phosphine purification for gas-source MBE of InGaAlPHafich, M.J. / Woods, L.M. / Kim, H.S. / Patrizi, G.A. / Robinson, G.Y. et al. | 1993
- 999
-
Real-time μ-RHEED observations of droplets on GaAs (111) B surfaces during growth with alternating source supplyMorishita, Y. / Nomura, Y. / Goto, S. / Isu, T. / Katayama, Y. et al. | 1993
- 1005
-
In situ Auger electron spectroscopy of carbon transient behavior on GaAs surfaces exposed to trimethylgalliumGoto, S. / Ohno, H. / Nomura, Y. / Morishita, Y. / Watanabe, A. / Katayama, Y. et al. | 1993
- 1010
-
In-situ control of Ga(Al)As MBE layers by pyrometric interferometryGrothe, H. / Boebel, F. G. et al. | 1993
- 1010
-
In-situ control of Ga(A1)As MBE layers by pyrometric interferometryGrothe, H. / Boebel, F.G. et al. | 1993
- 1014
-
RHEED and RD monitoring of CBE using TEG and TBA as precursorsPaulsson, G. / Junno, B. / Samuelson, L. et al. | 1993
- 1018
-
Variation of surface composition during heteroepitaxy observed by coaxial impact collision ion scattering spectroscopySaitoh, T. / Hashimoto, A. / Ohkouchi, S. / Tamura, M. et al. | 1993
- 1022
-
RHEED studies of Ga desorption from GaAs and of As desorption from Si-doped GaAs during growth interruptionThierry-Mieg, Véronique / Laruelle, François / Etienne, Bernard et al. | 1993
- 1025
-
Simulation of RHEED intensity oscillations during MBE growthvan der Wagt, J.P.A. / Harris, J.S. Jr. et al. | 1993
- 1030
-
Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopyKirchner, Peter D. / Vaterlaus, Andreas / Feenstra, Randall M. / Lin, Chi-lieh / Pettit, G.David / Woodall, Jerry M. et al. | 1993
- 1032
-
An STM study of molecular-beam epitaxy growth of GaAsOrr, B.G. et al. | 1993
- 1033
-
GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 μm lasersZhang, G. / Ovtchinnikov, A. / Näppi, J. / Hakkarainen, T. / Asonen, H. et al. | 1993
- 1037
-
Selective n- and p-type C-doping in Ga0.47In0.53As superlatticesSchubert, E.F. / Kopf, R.F. et al. | 1993
- 1041
-
Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBEInoue, Koichi / Kimura, Kenta / Maehashi, Kenzo / Hasegawa, Shigehiko / Nakashima, Hisao / Iwane, Masaaki / Matsuda, Osamu / Murase, Kazuo et al. | 1993
- 1045
-
Facetted MBE growth of (GaAl)As on RIE patterned surfacesWalther, M. / Röhr, T. / Böhm, G. / Tränkle, G. / Weimann, G. et al. | 1993
- 1051
-
Self-organization during Si incorporation in MBE-grown vicinal GaAs(001) surfacesDäweritz, L. / Hagenstein, K. / Schützendübe, P. et al. | 1993
- 1056
-
RHEED-based measurements of atomic segregation at GaAs/AlAs interfacesEtienne, Bernard / Laruelle, Fran¢ois et al. | 1993
- 1059
-
Growth kinetics and critical temperature measurements in MOMBE growth of GaAs with TMGa by RHEEDKaneko, T. / Naji, O. / Jones, T.S. / Joyce, B.A. et al. | 1993
- 1064
-
Observation of GaAs (001) surfaces at high temperatures by scanning tunneling microscopyYamaguchi, Hiroshi / Kasu, Makoto / Sueyoshi, Takashi / Sato, Tomoshige / Iwatsuki, Masashi et al. | 1993
- 1068
-
Mesoscopic step arrays by periodic step bunching on high-index GaAs surfacesNötzel, R. / Eissler, D. / Ploog, K. et al. | 1993
- 1073
-
Direct evidence for native point defects in MBE-grown AlAs/GaAs heterostructuresKrispin, P. / Hey, R. / Kostial, H. / Höricke, M. et al. | 1993
- 1077
-
Atomic-scale view of AlGaAs/GaAs multilayers with cross-sectional scanning tunneling microscopyJohnson, M.B. / Maier, U. / Meier, H.-P. / Salemink, H. et al. | 1993
- 1083
-
Observation of electroluminescence above room temperature in strained p-type Si0.65Ge0.35/Si(111) multiple quantum wellsFukatsu, S. / Usami, N. / Shiraki, Y. / Nishida, A. / Nakagawa, K. et al. | 1993
- 1088
-
Molecular beam epitaxy of precipitation free high temperature SmBa2Cu3O7−δ superconductor thin films with small surface roughnessSchindler, W. / van Hasselt, P. / Tontsch, P. / Markl, J. / Burger, J. / Bauer, P. / Saemann-Ischenko, G. et al. | 1993
- 1091
-
Author index| 1993
- 1109
-
Subject index| 1993
- ii
-
Editorial Board| 1993
- ix
-
Preface| 1993
-
PROCEEDINGS OF THE SEVENTH INTERNATIONAL CONFERENCE ON MOLECULAR BEAM EPITAXY SCHWÄBISCH GMÜND, GERMANY, 24-28 AUGUST 1992Ploog, K. et al. | 1993