The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studies (Englisch)
- Neue Suche nach: Passacantando, M.
- Neue Suche nach: Jolly, F.
- Neue Suche nach: Lozzi, L.
- Neue Suche nach: Salerni, V.
- Neue Suche nach: Picozzi, P.
- Neue Suche nach: Santucci, S.
- Neue Suche nach: Corsi, C.
- Neue Suche nach: Zintu, D.
- Neue Suche nach: Passacantando, M.
- Neue Suche nach: Jolly, F.
- Neue Suche nach: Lozzi, L.
- Neue Suche nach: Salerni, V.
- Neue Suche nach: Picozzi, P.
- Neue Suche nach: Santucci, S.
- Neue Suche nach: Corsi, C.
- Neue Suche nach: Zintu, D.
In:
Journal of Non-Crystalline Solids
;
322
, 1-3
;
225-232
;
2003
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studies
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Beteiligte:Passacantando, M. ( Autor:in ) / Jolly, F. ( Autor:in ) / Lozzi, L. ( Autor:in ) / Salerni, V. ( Autor:in ) / Picozzi, P. ( Autor:in ) / Santucci, S. ( Autor:in ) / Corsi, C. ( Autor:in ) / Zintu, D. ( Autor:in )
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Erschienen in:Journal of Non-Crystalline Solids ; 322, 1-3 ; 225-232
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2003
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Format / Umfang:8 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 322, Ausgabe 1-3
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- 7
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Neutron scattering studies of vitreous germaniaFabiani, E. / Gonzalez, M.A. / Caponi, S. / Fontana, A. / Montagna, M. / Pilla, O. / Rossi, F. / Varsamis, C.P.E. et al. | 2003
- 11
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Bi-dimensional ballistic model of a trap capture cross-sectionSorbier, J.P. / Chambarel, A. et al. | 2003
- 17
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De-alloying behaviour of metal nanoclusters in SiO2 upon irradiation and thermal treatmentsMattei, G. / Battaglin, G. / Bello, V. / De Marchi, G. / Maurizio, C. / Mazzoldi, P. / Parolin, M. / Sada, C. et al. | 2003
- 22
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Pyrolysis pathway of sol–gel derived organic/inorganic hybrid nanocompositesCeccato, Riccardo / Dirè, Sandra / Lutterotti, Luca et al. | 2003
- 29
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- 35
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- 41
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Aging effects in supercooled silica. - A molecular dynamics investigationKerrache, A. et al. | 2003
- 41
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Aging effects in supercooled silica.Kerrache, A. / Teboul, V. / Guichaoua, D. / Monteil, A. et al. | 2003
- 46
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Raman spectroscopy on SiO2 glasses sintered from nanosized particlesIvanda, M. / Clasen, R. / Hornfeck, M. / Kiefer, W. et al. | 2003
- 53
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Vibrational dynamic of ‘strong’ glasses: the case of v-SiO2 and v-GeO2Pilla, O. / Fontana, A. / Caponi, S. / Rossi, F. / Viliani, G. / Gonzalez, M.A. / Fabiani, E. / Varsamis, C.P.E. et al. | 2003
- 58
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Luminescence and absorption in type III silica implanted with multi-energy Si, O and Ar ionsMagruder, R.H. III / Weeks, R.A. / Weller, R.A. et al. | 2003
- 68
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OH-dependence of ultraviolet emission in porous silicaAnedda, A. / Carbonaro, C.M. / Clemente, F. / Corpino, R. / Grandi, S. / Mustarelli, P. / Magistris, A. et al. | 2003
- 73
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Effect of F2 laser power on defect formation in high-purity SiO2 glassKajihara, Koichi / Ikuta, Yoshiaki / Hirano, Masahiro / Hosono, Hideo et al. | 2003
- 78
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Properties of phosphorus-related defects induced by γ-rays and pulsed X-ray irradiation in germanosilicate optical fibersGirard, S. / Boukenter, A. / Ouerdane, Y. / Meunier, J.-P. / Keurinck, J. et al. | 2003
- 78
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Properties of phosphorus-related defects induced by g-rays and pulsed X-ray irradiation in germanosilicate optical fibersGirard, S. et al. | 2003
- 84
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Transient visible-UV absorption in beta irradiated silicaAgnello, S. / Boizot, B. et al. | 2003
- 90
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Growth of H(II) centers in natural silica after UV laser exposureCannas, M. / Agnello, S. / Boscaino, R. / Costa, S. / Gelardi, F.M. / Messina, F. et al. | 2003
- 95
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Ultraviolet excitation of photoluminescence of porous silica under vacuum conditionsAnedda, A. / Carbonaro, C.M. / Clemente, F. / Corpino, R. / Raga, F. / Serpi, A. et al. | 2003
- 100
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Model for negative bias temperature instability in p-MOSFETs with ultrathin oxynitride layersHoussa, M. / Parthasarathy, C. / Espreux, N. / Revil, N. / Autran, J.-L. et al. | 2003
- 105
-
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopiesBonera, E. / Scarel, G. / Fanciulli, M. et al. | 2003
- 111
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Defect generation in low-energy ion-assisted thermal deposited lithium fluoride filmsCricenti, A. / Montereali, R.M. / Mussi, V. / Nichelatti, E. / Pilloni, L. / Scaglione, S. / Somma, F. et al. | 2003
- 117
-
Optical properties of rough, inhomogeneous lithium fluoride films with colour centresNichelatti, E. / Montereali, R.M. / Montecchi, M. / Marolo, T. et al. | 2003
- 122
-
Model of leakage current induced by dynamic stress in thin EEPROM tunnel oxidesSorbier, J.P. / Croci, S. / Imbert, B. / Plossu, C. et al. | 2003
- 129
-
Ultraviolet emission lifetime in Si and Ge oxygen deficient centers in silicaCannas, M. / Agnello, S. / Boscaino, R. / Gelardi, F.M. / Grandi, S. / Mustarelli, P.C. et al. | 2003
- 134
-
Ge related centers induced by gamma irradiation in sol–gel Ge-doped silicaAgnello, S. / Boscaino, R. / Cannas, M. / Gelardi, F.M. / La Mattina, F. / Grandi, S. / Magistris, A. et al. | 2003
- 139
-
Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETsBravaix, Alain / Goguenheim, Didier / Revil, Nathalie / Rubaldo, Laurent / Vincent, Emmanuel et al. | 2003
- 147
-
Zirconium silicate films obtained from novel MOCVD precursorsLemberger, M / Paskaleva, A / Zürcher, S / Bauer, A.J / Frey, L / Ryssel, H et al. | 2003
- 154
-
Dielectric investigation of inorganic–organic hybrid film based on zirconium oxocluster-crosslinked PMMAGross, Silvia / Di Noto, Vito / Schubert, Ulrich et al. | 2003
- 160
-
Towards a full microscopic approach to the modeling of transistors with nanometer dimensionsBescond, Marc / Lannoo, Michel / Goguenheim, Didier / Autran, Jean-Luc et al. | 2003
- 168
-
Investigation of point defects at the high-k oxides/Si(100) interface by electrically detected magnetic resonanceBaldovino, S. / Nokhrin, S. / Scarel, G. / Fanciulli, M. / Graf, T. / Brandt, M.S. et al. | 2003
- 174
-
STM study of ultra-thin (2 nm) silicon oxideGentile, P. / Eymery, J. / Gustavo, F. / Mur, P. / Hartmann, J. M. / Besson, P. et al. | 2003
- 174
-
STM study of ultra-thin (<2 nm) silicon oxideGentile, P. / Eymery, J. / Gustavo, F. / Mur, P. / Hartmann, J.M. / Besson, P. et al. | 2003
- 179
-
New oxide quality characterization for charge leakage applications using the floating-gate techniqueRenard, Sophie / Boivin, Philippe / Autran, Jean-Luc et al. | 2003
- 183
-
Comparison of degradation modes in 1.2–2.1 nm thick SiO2 oxides submitted to uniform and hot carrier injections in NMOSFETSGoguenheim, Didier / Trapes, Céline / Bravaix, Alain et al. | 2003
- 191
-
Quantitative study of charge trapping in SiO2 during bipolar Fowler–Nordheim injectionBusseret, C. / Baboux, N. / Plossu, C. / Burignat, S. / Boivin, P. et al. | 2003
- 199
-
Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injectionTrapes, Céline / Goguenheim, Didier / Bravaix, Alain et al. | 2003
- 206
-
Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxidesMunteanu, D. / Autran, J.-L. / Decarre, E. / Dinescu, R. et al. | 2003
- 213
-
Advanced measurement techniques of space-charge induced by an electron beam irradiation in thin dielectric layersLiebault, J / Zarbout, K / Moya, G / Kallel, A et al. | 2003
- 219
-
Stretch-out of high-permittivity MOS capacitance–voltage curves resulting from a lateral non-uniform oxide charge distributionAutran, J.-L. / Munteanu, D. / Dinescu, R. / Houssa, M. et al. | 2003
- 225
-
The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studiesPassacantando, M. / Jolly, F. / Lozzi, L. / Salerni, V. / Picozzi, P. / Santucci, S. / Corsi, C. / Zintu, D. et al. | 2003
- 233
-
Structural and electrical properties of Ta2O5 thin films deposited on Si from Ta(OC2H5)5 precursorJolly, Florence / Passacantando, Maurizio / Salerni, Vicenzo / Lozzi, Luca / Picozzi, Pietro / Santucci, Sandro et al. | 2003
- 240
-
Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cellsBaboux, N. / Busseret, C. / Plossu, C. / Burignat, S. / Balland, B. / Boivin, P. et al. | 2003
- 246
-
EEPROM cell design: paradoxical choice of the coupling ratioCanet, P. / Bouchakour, R. / Lalande, F. / Mirabel, J.M. et al. | 2003
- 250
-
A new floating gate compact model applied to flash memory cellLaffont, R. / Masson, P. / Bernardini, S. / Bouchakour, R. / Mirabel, J.M. et al. | 2003
- 256
-
Active waveguide devices by Ag–Na ion exchange on erbium–ytterbium doped phosphate glassesJose, G. / Sorbello, G. / Taccheo, S. / Cianci, E. / Foglietti, V. / Laporta, P. et al. | 2003
- 262
-
Two-component model for photo-induced refractive index change in hydrogen-loaded phosphosilicate glassde Beaumont, Charlotte / Rossotto, Oriana / Cognolato, Livio et al. | 2003
- 266
-
Photorefractivity in SiO2:SnO2 glass-ceramics by visible lightChiodini, N. / Paleari, A. / Spinolo, G. / Crespi, P. et al. | 2003
- 272
-
Reversible photoluminescence quenching in Er3+-doped silica–titania planar waveguides prepared by sol–gelMarques, Ana C. / Almeida, Rui M. / Chiasera, Alessandro / Ferrari, Maurizio et al. | 2003
- 278
-
Design of Er3+ doped SiO2–TiO2 planar waveguide amplifierD’Orazio, A. / De Sario, M. / Mescia, L. / Petruzzelli, V. / Prudenzano, F. / Chiasera, A. / Montagna, M. / Tosello, C. / Ferrari, M. et al. | 2003
- 284
-
Dependence on Ge doping of specific volume change in silica induced by electron-beam irradiationJacqueline, A.-S. / Garcia-Blanco, S. / Poumellec, B. / Aitchison, J.S. et al. | 2003
- 289
-
Er3+/Yb3+-activated silica–titania planar waveguides for EDPWAs fabricated by rf-sputteringChiasera, A. / Tosello, C. / Moser, E. / Montagna, M. / Belli, R. / Gonçalves, R.R. / Righini, G.C. / Pelli, S. / Chiappini, A. / Zampedri, L. et al. | 2003
- 295
-
Erbium-doped GeO2–TiO2 sol–gel waveguidesMartucci, Alessandro / Chiasera, Alessandro / Montagna, Maurizio / Ferrari, Maurizio et al. | 2003
- 300
-
Metal nanoparticles–silica composites: Z-scan determination of non-linear refractive indexPolloni, R. / Scremin, B.F. / Calvelli, P. / Cattaruzza, E. / Battaglin, G. / Mattei, G. et al. | 2003
- 306
-
Infrared-to-visible CW frequency upconversion in erbium activated silica–hafnia waveguides prepared by sol–gel routeGonçalves, Rogéria R. / Carturan, Giovanni / Zampedri, Luca / Ferrari, Maurizio / Chiasera, Alessandro / Montagna, Maurizio / Righini, Giancarlo C. / Pelli, Stefano / Ribeiro, Sidney J.L. / Messaddeq, Younes et al. | 2003
- 311
-
Characterization of new erbium-doped tellurite glasses and fibersMarjanovic, S. / Toulouse, J. / Jain, H. / Sandmann, C. / Dierolf, V. / Kortan, A.R. / Kopylov, N. / Ahrens, R.G. et al. | 2003
- 319
-
A comparison between different methods of calculating the radiative lifetime of the 4I13/2 level of Er3+ in various glassesChen, B.J. / Righini, G.C. / Bettinelli, M. / Speghini, A. et al. | 2003
- 325
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Author Index| 2003
- 330
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Subject Index| 2003
- ix
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Contents| 2003
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PrefaceVedda, Anna et al. | 2003