Fe onto GaN(0001) grown in a full MOVPE process (Englisch)
- Neue Suche nach: Navarro-Quezada, A.
- Neue Suche nach: Li, T.
- Neue Suche nach: Simbrunner, C.
- Neue Suche nach: Kiecana, M.
- Neue Suche nach: Hernandez-Sosa, G.
- Neue Suche nach: Quast, M.
- Neue Suche nach: Wegscheider, M.
- Neue Suche nach: Sawicki, M.
- Neue Suche nach: Dietl, T.
- Neue Suche nach: Bonanni, A.
- Neue Suche nach: Navarro-Quezada, A.
- Neue Suche nach: Li, T.
- Neue Suche nach: Simbrunner, C.
- Neue Suche nach: Kiecana, M.
- Neue Suche nach: Hernandez-Sosa, G.
- Neue Suche nach: Quast, M.
- Neue Suche nach: Wegscheider, M.
- Neue Suche nach: Sawicki, M.
- Neue Suche nach: Dietl, T.
- Neue Suche nach: Bonanni, A.
In:
Journal of Crystal Growth
;
310
, 7-9
;
1772-1776
;
2007
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Fe onto GaN(0001) grown in a full MOVPE process
-
Beteiligte:Navarro-Quezada, A. ( Autor:in ) / Li, T. ( Autor:in ) / Simbrunner, C. ( Autor:in ) / Kiecana, M. ( Autor:in ) / Hernandez-Sosa, G. ( Autor:in ) / Quast, M. ( Autor:in ) / Wegscheider, M. ( Autor:in ) / Sawicki, M. ( Autor:in ) / Dietl, T. ( Autor:in ) / Bonanni, A. ( Autor:in )
-
Erschienen in:Journal of Crystal Growth ; 310, 7-9 ; 1772-1776
-
Verlag:
- Neue Suche nach: Elsevier B.V.
-
Erscheinungsdatum:01.01.2007
-
Format / Umfang:5 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 310, Ausgabe 7-9
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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PrefaceStringfellow, G.B. / Feigelson, Robert S. et al. | 2008
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- 1337
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- 1343
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- 1349
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- 1455
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- 1464
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- 1518
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- 1523
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Magnetic stabilization of melt flows in horizontal Bridgman configurationsHenry, D. / Ben Hadid, H. / Kaddeche, S. / Dridi, W. et al. | 2007
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- 1559
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Angle-resolved XPS structural investigation of GaAs surfacesNegrila, C.C. / Logofatu, C. / Ghita, R.V. / Cotirlan, C. / Ungureanu, F. / Manea, A.S. / Lazarescu, M.F. et al. | 2007
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- 1614
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- 1627
-
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-
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-
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- 1647
-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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- 1804
-
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- 1810
-
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- 1815
-
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- 1819
-
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- 1823
-
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- 1827
-
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- 1832
-
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- 1836
-
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- 1841
-
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-
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-
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-
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-
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- 1881
-
Synthesis and characterization of the quasi-two-dimensional triangular antiferromagnets Ni1−xMxGa2S4 (M=Mn, Fe, Co, Zn)Nambu, Yusuke / Ichihara, Masaki / Kiuchi, Yoko / Nakatsuji, Satoru / Maeno, Yoshiteru et al. | 2007
- 1886
-
Crystal growth of Gd7−xYxPd3 intermetallicsTalik, E. / Klimczak, M. / Winiarski, A. / Troć, R. et al. | 2007
- 1891
-
Large aperture single crystal ZnGeP2 for high-energy applicationsZawilski, Kevin T. / Schunemann, Peter G. / Setzler, Scott D. / Pollak, Thomas M. et al. | 2007
- 1897
-
Glass formation and optical properties of CdGeAs2 alloysZawilski, Kevin T. / Schunemann, Peter G. / Pollak, Thomas M. et al. | 2007
- 1904
-
Infrared absorption and electrical properties of AgGaSe2Whittaker, Matthew T. / Stenger, Thomas E. / Krause, Daniel G. / Matthiesen, David H. et al. | 2008
- 1910
-
Crystal growth and below-bandgap optical absorption studies in InAs for non-linear optic applicationsBhat, R. / Dutta, P.S. / Guha, S. et al. | 2007
- 1917
-
PbSnTe double-hetero junction laser diode and its application to mid-infrared spectroscopic imagingOyama, Yutaka / Tanabe, Tadao / Kato, Yoshikazu / Nishizawa, Jun-Ichi / Sasaki, Tetsuo et al. | 2007
- 1923
-
Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generationOyama, Yutaka / Tanabe, Tadao / Sato, Fumikazu / Kenmochi, Atsushi / Nishizawa, Jun-ichi / Sasaki, Tetsuo / Suto, Ken et al. | 2008
- 1929
-
Growth of high resistivity RbTiOPO4 crystalsTseitlin, M. / Mojaev, E. / Roth, M. et al. | 2007
- 1934
-
Crystal growth by the heat exchanger method, spectroscopic characterization and laser operation of high-purity Yb:Lu2O3Peters, Rigo / Kränkel, Christian / Petermann, Klaus / Huber, Günter et al. | 2007
- 1939
-
Hydrothermal single crystal growth of Sc2O3 and lanthanide-doped Sc2O3McMillen, Colin D. / Kolis, Joseph W. et al. | 2007
- 1943
-
Investigation of phase equilibria and growth of BBO (β-BaB2O4) crystals in BaO–B2O3–Na2O ternary systemFedorov, P.P. / Kokh, A.E. / Kononova, N.G. / Bekker, T.B. et al. | 2007
- 1943
-
Investigation of phase equilibria and growth of BBO (b-BaB2O4) crystals in BaO-B2O3-Na2O ternary systemFedorov, P. P. / Kokh, A. E. / Kononova, N. G. / Bekker, T. B. et al. | 2008
- 1950
-
Removal of scattering centers in CBO crystals by the vapor transport equilibration processRajesh, D. / Eiro, T. / Yoshimura, M. / Mori, Y. / Jayavel, R. / Sasaki, T. et al. | 2007
- 1954
-
Nonlinear LiBIIICYI2 crystals for mid-IR and far-IR: Novel aspects in crystal growthIsaenko, L.I. / Vasilyeva, I.G. et al. | 2007
- 1961
-
Characteristics of high dielectric cubic Gd2O3 thin films deposited on cubic LaAlO3 by pulsed laser depositionChang, Kuo-Shu / Hsieh, Li-Zen / Huang, Shan-Kan / Lee, Ching-Yuan / Chiu, Yu-Sheng et al. | 2007
- 1966
-
Growth and ferroelectric domain control of homogeneous MgO-doped near-stoichiometric lithium niobate single crystals by melt-supplying techniqueZheng, Yanqing / Kong, Haikuan / Chen, Hui / Xin, Jun / Lu, Zhiping / Shi, Erwei et al. | 2007
- 1971
-
Phase formation in Li2O–Rb2O–B2O3 system and investigation of crystal structure of rubidium lithium borate RbLiB6O10·nH2OMeshalkin, A.B. / Kaplun, A.B. / Pylneva, N.A. / Pylneva, L.L. / Klevtzova, R.F. / Glinskaya, L.A. et al. | 2007
- 1976
-
Two-color nonvolatile holographic recording in Bridgman-grown Ru:LiNbO3 crystalsXu, Xuewu / Liang, Xinan / Li, Minghua / Solanki, Sanjeev / Chong, Tow-Chong et al. | 2007
- 1981
-
Phase equilibria in the Li2O–Cs2O–B2O3 systemMeshalkin, Arkadiy / Kaplun, Alexander et al. | 2007
- 1985
-
Growth of La2Ti2O7 and LaTiO3 thin films using pulsed laser depositionHavelia, S. / Balasubramaniam, K.R. / Spurgeon, S. / Cormack, F. / Salvador, P.A. et al. | 2008
- 1991
-
Growth and structural characterization of epitaxial Ba0.6Sr0.4TiO3 films deposited on REScO3(110) (RE=Dy, Gd) substrates using pulsed laser depositionDu, Hui / Fisher, Patrick J. / Skowronski, Marek / Salvador, Paul A. / Maksimov, O. et al. | 2007
- 1999
-
Effect of irradiation of swift heavy ions on dyes-doped KDP crystals for laser applicationsKumaresan, P. / Moorthy Babu, S. / Anbarasan, P.M. et al. | 2007
- 2005
-
Crystal growth of KDP, ADP, and KADPRen, Xiue / Xu, Dongli / Xue, Dongfeng et al. | 2007
- 2010
-
Growth and optical properties of bulk KTP crystals by hydrothermal methodZhang, Chang-Long / Hu, Zhang-Gui / Huang, Ling-Xiong / Zhou, Wei-Ning / lü, Zhi / Zhang, Ge / Liu, You-Chen / Zou, Yan-Bin / Lu, Fu-Hua / Hou, Hang-De et al. | 2008
- 2015
-
Crystal growth and spectroscopic characterization of Pr-doped KPb2Cl5 for mid-infrared laser applicationsAmedzake, P. / Brown, E. / Hömmerich, U. / Trivedi, S.B. / Zavada, J.M. et al. | 2007
- 2020
-
Some dielectric and optical properties of ErF3-doped CaF2 crystalsNicoara, Irina / Munteanu, Mihai / Preda, Eleonora / Stef, Marius et al. | 2007
- 2026
-
Optical spectroscopy of Yb2+ ions in YbF3-doped CaF2 crystalsNicoara, Irina / Lighezan, Liliana / Enculescu, Monica / Enculescu, Ionut et al. | 2007
- 2033
-
Hydrothermal crystal growth of ABe2BO3F2 (A=K, Rb, Cs, Tl) NLO crystalsMcMillen, Colin D. / Kolis, Joseph W. et al. | 2007
- 2039
-
Crystalline fiber growth of dye-doped l-arginine phosphate by the laser-heated pedestal growth techniqueSingh, Shivani / Lal, Bansi et al. | 2007
- 2043
-
Mechanical and surface analysis of stilbazolium tosylate derivative crystalsKalainathan, S. / Jagannathan, K. et al. | 2007
- 2050
-
Growth and characterization of an organometallic tri-allylthiourea complex nonlinear optical crystalsPerumal, R. / Moorthy Babu, S. et al. | 2007
- 2058
-
Crystal growth of large-diameter bulk CdTe on GaAs wafer seed platesMullins, J.T. / Cantwell, B.J. / Basu, A. / Jiang, Q. / Choubey, A. / Brinkman, A.W. et al. | 2007
- 2062
-
Growth of thick films CdTe from the vapor phaseSorgenfrei, R. / Greiffenberg, D. / Bachem, K.H. / Kirste, L. / Zwerger, A. / Fiederle, M. et al. | 2007
- 2067
-
Modified Bridgman growth of CdTe crystalsSaucedo, E. / Rudolph, P. / Dieguez, E. et al. | 2008
- 2072
-
Full encapsulated CdZnTe crystals by the vertical Bridgman methodZha, M. / Zappettini, A. / Calestani, D. / Marchini, L. / Zanotti, L. / Paorici, C. et al. | 2008
- 2076
-
Growth and characterization of CdTe:Ge:YbSochinskii, N.V. / Saucedo, E. / Abellan, M. / Rodríguez-Fernández, J. / Hidalgo, P. / Piqueras, J. / Ruiz, C.M. / Bermúdez, V. / Diéguez, E. et al. | 2007
- 2080
-
Off-stoichiometry determination of II–VI bulk crystalsZappettini, A. / Spano, N. / Mazzera, M. / Guadalupi, G.M. / Paorici, C. et al. | 2007
- 2085
-
Crystal growth of large diameter LaBr3:Ce and CeBr3Higgins, W.M. / Churilov, A. / van Loef, E. / Glodo, J. / Squillante, M. / Shah, K. et al. | 2007
- 2090
-
Crystal growth and characterization of rare earth iodides for scintillation detectionvan Loef, E.V. / Higgins, W.M. / Glodo, J. / Churilov, A.V. / Shah, K.S. et al. | 2007
- 2094
-
Modeling and crystal growth of semi-transparent rare earth halidesChurilov, Alexei V. / Higgins, William M. / Ostrogorsky, Aleksandar G. / Ciampi, Guido / van Loef, Edgar V. / Motakef, Shariar / Overholt, Matthew R. / Shah, Kanai S. et al. | 2007
- 2099
-
New scintillator materials (K2CeBr5 and Cs2CeBr5)Hawrami, R. / Batra, A.K / Aggarwal, M.D / Roy, U.N. / Groza, M. / Cui, Y. / Burger, A. / Cherepy, Nerine / Niedermayr, Thomas / Payne, Stephen A. et al. | 2007
- 2103
-
Vapor growth of electrochromic thin films of transition metal oxidesGesheva, K.A. / Ivanova, T. / Marsen, B. / Zollo, G. / Kalitzova, M. et al. | 2008
- 2110
-
The effect of co-doping on the growth stability and scintillation properties of lutetium oxyorthosilicateSpurrier, M.A. / Szupryczynski, P. / Rothfuss, H. / Yang, K. / Carey, A.A. / Melcher, C.L. et al. | 2007
- 2115
-
Growth of 2,5-diphenyloxazole-doped naphthalene crystal by Bridgman method and its fluorescence studiesBalamurugan, N. / Arulchakkaravarthi, A. / Ramasamy, P. et al. | 2007
- 2120
-
Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) techniqueNeubert, M. / Rudolph, P. / Frank-Rotsch, Ch. / Czupalla, M. / Trompa, K. / Pietsch, M. / Jurisch, M. / Eichler, St. / Weinert, B. / Scheffer-Czygan, M. et al. | 2007
- 2126
-
3-D time-dependent numerical model of flow patterns within a large-scale Czochralski systemNam, Phil-Ouk / O, Sang-Kun / Yi, Kyung-Woo et al. | 2007
- 2134
-
The influence of the scatter of heat flux at the m/c interface on the frequency of appearance of poly body and twin defects during 6″ semi-insulating GaAs crystal growth by the VGF methodMarchenko, Marina P. / Liu, Weiguo / Badawi, M. Hani / Yin, Phil et al. | 2007
- 2134
-
The influence of the scatter of heat flux at the m/c interface on the frequency of appearance of poly body and twin defects during 6Prime semi-insulating GaAs crystal growth by the VGF methodMarchenko, M. P. / Liu, W. / Badawi, M. H. / Yin, P. et al. | 2008
- 2141
-
Advanced technologies of shaped sapphire fabricationBorodin, A.V. et al. | 2007
- 2148
-
Growth of stable shaped single crystals by the micro-pulling-down method with automatic power control systemSimura, Rayko / Kochurikhin, Vladimir V. / Yoshikawa, Akira / Uda, Satoshi et al. | 2007
- 2152
-
The micro-pulling-down growth of Bi4Si3O12 (BSO) and Bi4Ge3O12 (BGO) fiber crystals and their scintillation efficiencyZhuravleva, Mariya / Chani, Valery I. / Yanagida, Takayuki / Yoshikawa, Akira et al. | 2007
- 2157
-
Fast growth of KDPXu, Dongli / Xue, Dongfeng et al. | 2007
- 2162
-
Synthesis of hydroxyapatite whiskers through dissolution–reprecipitation process using EDTASeo, Dong Seok / Lee, Jong Kook et al. | 2007
- 2168
-
Effect of solution flow produced by rotary shaker on protein crystallizationMurai, Ryota / Yoshikawa, Hiroshi Y. / Kawahara, Hisato / Maki, Syou / Sugiyama, Shigeru / Kitatani, Tomoya / Adachi, Hiroaki / Takano, Kazufumi / Matsumura, Hiroyoshi / Murakami, Satoshi et al. | 2008
- 2173
-
Ultraprecision finishing technique by numerically controlled sacrificial oxidationSano, Yasuhisa / Masuda, Takaya / Mimura, Hidekazu / Yamauchi, Kazuto et al. | 2007
- 2178
-
Bulk multicrystalline silicon growth for photovoltaic (PV) applicationWu, Bei / Stoddard, Nathan / Ma, Ronghui / Clark, Roger et al. | 2007
- 2185
-
Optimization of furnace design and growth parameters for Si Cz growth, using numerical simulationSmirnova, O.V. / Durnev, N.V. / Shandrakova, K.E. / Mizitov, E.L. / Soklakov, V.D. et al. | 2007
- 2192
-
Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cellsLiu, Lijun / Nakano, Satoshi / Kakimoto, Koichi et al. | 2007
- 2198
-
Silicon shot solidification in waterCiszek, T.F. et al. | 2007
- 2204
-
Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cellsMatsuo, Hitoshi / Bairava Ganesh, R. / Nakano, Satoshi / Liu, Lijun / Arafune, Koji / Ohshita, Yoshio / Yamaguchi, Masafumi / Kakimoto, Koichi et al. | 2008
- 2209
-
3D unsteady analysis of melt flow and segregation during EFG Si crystal growthSmirnova, O.V. / Kalaev, V.V. / Seidl, A. / Birkmann, B. et al. | 2007
- 2215
-
Crystal growth of argyrodite-type phases Cu8–xGeS6−xIx and Cu8–xGeSe6−xIx (0x0.8)Tomm, Yvonne / Schorr, Susan / Fiechter, Sebastian et al. | 2007
- 2222
-
Optimization of annealing conditions of (GaIn)(NAs) for solar cell applicationsVolz, K. / Lackner, D. / Németh, I. / Kunert, B. / Stolz, W. / Baur, C. / Dimroth, F. / Bett, A.W. et al. | 2007
- 2229
-
Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structuresHulicius, Eduard / Oswald, Jiří / Pangrác, Jiří / Vyskočil, Jan / Hospodková, Alice / Kuldová, Karla / Melichar, Karel / Šimeček, Tomislav et al. | 2007
- 2234
-
Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dotsOshima, Ryuji / Nakamura, Yuta / Takata, Ayami / Okada, Yoshitaka et al. | 2007
- 2239
-
Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxyFuchi, S. / Miyake, S. / Kawamura, S. / Lee, W.S. / Ujihara, T. / Takeda, Y. et al. | 2007
- 2244
-
Growth of nanodots on a strained GaAs epilayer using scanning tunneling microscopeAbel, Joseph / Kim, Dong Jun / Everett, E. Addison / Yang, Haeyeon et al. | 2007
- 2248
-
Phase-field study of interface energy effect on quantum dot morphologyTakaki, Tomohiro / Hirouchi, Tomoyuki / Tomita, Yoshihiro et al. | 2007
- 2254
-
Mathematical simulation, synthesis, characterization and application of indium arsenide whiskersBolshakova, I. / Kost, Ya. / Makido, O. / Shurygin, F. et al. | 2007
- 2260
-
Growth and characterization of gallium nitride nanocrystals on carbon nanotubesSuresh Kumar, V. / Kumar, J. / Srivastava, Rajesh Kumar / Srivastava, Anchal / Srivastava, O.N. et al. | 2008
- 2264
-
Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperaturesKo, Tsung-Shine / Chu, Chia-Pu / Chen, Jun-Rong / Lu, Tien-Chang / Kuo, Hao-Chung / Wang, Shing-Chung et al. | 2007
- 2268
-
Crystal growth of rare earth-transition metal borocarbides and silicidesBehr, Günter / Löser, Wolfgang / Souptel, Dmitri / Fuchs, Günter / Mazilu, Irina / Cao, Chongde / Köhler, Anke / Schultz, Ludwig / Büchner, Bernd et al. | 2008
- 2277
-
Powder synthesis and crystal growth of Y2V2O7 under high pressure and its physical propertiesHaghighirad, A.A. / Gross, C. / Assmus, W. et al. | 2007
- 2284
-
Growth and characterization of langasite-type Ba3TaGa3Si2O14 single crystalsZheng, Yanqing / Xin, Jun / Kong, Haikuan / Chen, Hui / Shi, Erwei et al. | 2007
- 2288
-
Phase equilibria, crystal growth and characterization of the novel ferroelectric tungsten bronzes (CBN) and (CSBN)Muehlberg, M. / Burianek, M. / Joschko, B. / Klimm, D. / Danilewsky, A. / Gelissen, M. / Bayarjargal, L. / Görler, G.P. / Hildmann, B.O. et al. | 2007
- 2288
-
Phase equilibria, crystal growth and characterization of the novel ferroelectric tungsten bronzes Formula Not Shown (CBN) and Formula Not Shown (CSBN)Muehlberg, M. / Burianek, M. / Joschko, B. / Klimm, D. / Danilewsky, A. / Gelissen, M. / Bayarjargal, L. / Gorler, G. P. / Hildmann, B. O. et al. | 2008
- 2295
-
Solid-phase grain growth of In2O3 at high pressures and temperaturesSaitoh, H. / Utsumi, W. / Aoki, K. et al. | 2007
- 2298
-
Growth and band gap of the filled tetrahedral semiconductor Li3AlP2Kuriyama, K. / Anzawa, J. / Kushida, K. et al. | 2007
- 2301
-
Investigation of the thermal conductivity of a fullerene peapod by molecular dynamics simulationKawamura, Takahiro / Kangawa, Yoshihiro / Kakimoto, Koichi et al. | 2007
- 2307
-
Editors’ Preface to the ICCG-15 conference and the 13th OMVPE workshop proceedings| 2008
- 2308
-
Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substratesImura, Masataka / Sugimura, Hiroki / Okada, Narihito / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu / Bandoh, Akira et al. | 2007
- 2314
-
Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1−xN MOCVD on SiC substratesAcord, Jeremy D. / Weng, Xiaojun / Dickey, Elizabeth C. / Snyder, David W. / Redwing, Joan M. et al. | 2007
- 2320
-
Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxyEe, Yik-Khoon / Zhao, Hongping / Arif, Ronald A. / Jamil, Muhammad / Tansu, Nelson et al. | 2008
- 2326
-
High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlNNagamatsu, Kentaro / Okada, Narihito / Sugimura, Hiroki / Tsuzuki, Hirotoshi / Mori, Fumiaki / Iida, Kazuyoshi / Bando, Akira / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi et al. | 2007
- 2330
-
Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technologyLing, Shih-Chun / Wang, Te-Chung / Ko, Tsung-Shine / Lu, Tien-Chang / Kuo, Hao-Chung / Wang, Shing-Chung et al. | 2008
- 2334
-
MOVPE preparation of InGaAs(100) surface reconstructions employing transient in-situ RDSSeidel, U. / Hannappel, T. et al. | 2007
- 2339
-
In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cellsGeisz, J.F. / Levander, A.X. / Norman, A.G. / Jones, K.M. / Romero, M.J. et al. | 2007
- 2345
-
Variation of the morphology of strained AlGaInAs quantum wells with substrate orientationCaneau, Catherine / Bhat, Rajaram / Nishiyama, Nobuhiko et al. | 2007
- 2353
-
InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arraysChun, I.S. / Verma, V.B. / Elarde, V.C. / Kim, S.W. / Zuo, J.M. / Coleman, J.J. / Li, X. et al. | 2007
- 2359
-
Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxySato, Takuya / Motohisa, Junichi / Noborisaka, Jinichiro / Hara, Shinjiro / Fukui, Takashi et al. | 2007
- 2365
-
Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodesChapman, D.C. / Vineis, C.J. / Oakley, D.C. / Napoleone, A. / Smith, G.M. / Duerr, E.K. / Jensen, K.E. / Donnelly, J.P. / McIntosh, K.A. / Verghese, S. et al. | 2007
- 2370
-
InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor depositionXu, D.P. / D’Souza, M. / Shin, J.C. / Mawst, L.J. / Botez, D. et al. | 2008
- 2377
-
Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InPSong, X. / Babcock, S.E. / Paulson, C.A. / Kuech, T.F. / Huang, J.Y.T. / Xu, D.P. / Park, J. / Mawst, L.J. et al. | 2007
- 2382
-
Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substratesHuang, J.Y.T. / Xu, D.P. / Song, X. / Babcock, S.E. / Kuech, T.F. / Mawst, L.J. et al. | 2007
- 2390
-
Self-assembly and selective-area formation of ferromagnetic MnAs nanoclusters on lattice-mismatched semiconductor surfaces by MOVPEHara, Shinjiroh / Kawamura, Daichi / Iguchi, Hiroko / Motohisa, Junichi / Fukui, Takashi et al. | 2007
- 2395
-
Accurate vapor pressure equation for trimethylindium in OMVPEShenai-Khatkhate, Deodatta V. / DiCarlo, Ronald L. Jr. / Ware, Robert A. et al. | 2007
- 2399
-
Report on the meetings of the International Organization for Crystal Growth Executive Committee, Council and General Assembly held during ICCG-15/ICVGE-13 in Salt Lake City, Utah, USA, 12–17 August 2007Kuech, T. et al. | 2008
- 2401
-
Author Index - Vol. 310/7-9| 2008
- 2413
-
Subject Index - Vol. 310/7-9| 2008
- v
-
List of contents ICCG-15 and BWOVPE-13| 2008