GaSb quantum rings grown by metal organic molecular beam epitaxy (Englisch)
- Neue Suche nach: Odashima, S.
- Neue Suche nach: Sakurai, S.
- Neue Suche nach: Wada, M.
- Neue Suche nach: Suemune, I.
- Neue Suche nach: Odashima, S.
- Neue Suche nach: Sakurai, S.
- Neue Suche nach: Wada, M.
- Neue Suche nach: Suemune, I.
In:
Journal of Crystal Growth
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323
, 1
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233-235
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2011
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:GaSb quantum rings grown by metal organic molecular beam epitaxy
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Beteiligte:Odashima, S. ( Autor:in ) / Sakurai, S. ( Autor:in ) / Wada, M. ( Autor:in ) / Suemune, I. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 323, 1 ; 233-235
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2011
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 323, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Editor's prefaceGeelhaar, Lutz / Heyn, Christian / Wieck, Andreas D. et al. | 2011
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Sixteenth International Conference on Molecular Beam Epitaxy| 2011
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Sixteenth International Conference on Molecular Beam Epitaxy:Berlin, Germany, August 22–27, 2010| 2011
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Crystallization of amorphous InAs/GaAs films on GaAsHey, R. / Santos, P.V. / Luna, E. / Flissikowski, T. / Jahn, U. et al. | 2010
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Area selective epitaxy of InAs on GaAs(001) and GaAs(111)A by migration enhanced epitaxyZander, M. / Nishinaga, J. / Iga, K. / Horikoshi, Y. et al. | 2010
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Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxySasaki, Takuo / Suzuki, Hidetoshi / Sai, Akihisa / Takahasi, Masamitu / Fujikawa, Seiji / Kamiya, Itaru / Ohshita, Yoshio / Yamaguchi, Masafumi et al. | 2010
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X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxyLin, Hai / Huo, Yijie / Rong, Yiwen / Chen, Robert / Kamins, Theodore I. / Harris, James S. et al. | 2010
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Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBESong, Yuxin / Wang, Shumin / Cao, Xiaohui / Lai, Zonghe / Sadeghi, Mahdad et al. | 2010
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Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBEKuboya, S. / Kuroda, M. / Katayama, R. / Onabe, K. et al. | 2011
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Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum wellIshikawa, Fumitaro / Morifuji, Masato / Nagahara, Kenichi / Uchiyama, Masayuki / Higashi, Kotaro / Kondow, Masahiko et al. | 2010
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AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrateTokranov, V. / Nagaiah, P. / Yakimov, M. / Matyi, R.J. / Oktyabrsky, S. et al. | 2011
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Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSbGozu, Shin-ichiro / Mozume, Teruo / Ishikawa, Hiroshi et al. | 2011
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Si doping of MBE grown bulk GaAsSb on InPDetz, H. / Klang, P. / Andrews, A.M. / Schrenk, W. / Strasser, G. et al. | 2010
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Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well systemFujiwara, K. / Jahn, U. / Luna, E. / Grahn, H.T. et al. | 2010
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(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wiresTrunov, K. / Reuter, D. / Ludwig, A. / Chen, J.C.H. / Klochan, O. / Micolich, A.P. / Hamilton, A.R. / Wieck, A.D. et al. | 2010
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Effect of strain on the Dresselhaus effect of InAs-based heterostructuresMatsuda, Takashi / Yoh, Kanji et al. | 2010
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Controlled growth of exciton–polariton microcavities using in situ spectral reflectivity measurementsBiermann, K. / Cerda-Méndez, E.A. / Höricke, M. / Santos, P.V. / Hey, R. et al. | 2010
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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devicesNovikov, S.V. / Staddon, C.R. / Foxon, C.T. / Yu, K.M. / Broesler, R. / Hawkridge, M. / Liliental-Weber, Z. / Denlinger, J. / Demchenko, I. / Luckert, F. et al. | 2010
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Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorptionKotsar, Y. / Kandaswamy, P.K. / Das, A. / Sarigiannidou, E. / Bellet-Amalric, E. / Monroy, E. et al. | 2010
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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxyMizerov, A.M. / Jmerik, V.N. / Yagovkina, M.A. / Troshkov, S.I. / Kop'ev, P.S. / Ivanov, S.V. et al. | 2010
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Growth and characterization of InGaN by RF-MBEKraus, A. / Hammadi, S. / Hisek, J. / Buß, R. / Jönen, H. / Bremers, H. / Rossow, U. / Sakalauskas, E. / Goldhahn, R. / Hangleiter, A. et al. | 2010
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Growth of non-polar GaN on LiGaO2 by plasma-assisted MBESchuber, R. / Chen, Y.L. / Shih, C.H. / Huang, T.H. / Vincze, P. / Lo, I. / Chang, L.W. / Schimmel, Th. / Chou, M.M.C. / Schaadt, D.M. et al. | 2010
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Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystalsNovikov, S.V. / Staddon, C.R. / Foxon, C.T. / Luckert, F. / Edwards, P.R. / Martin, R.W. / Kent, A.J. et al. | 2010
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Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substratesKemper, R.M. / Weinl, M. / Mietze, C. / Häberlen, M. / Schupp, T. / Tschumak, E. / Lindner, J.K.N. / Lischka, K. / As, D.J. et al. | 2010
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Carbon as an acceptor in cubic GaN/3C–SiCZado, A. / Tschumak, E. / Gerlach, J.W. / Lischka, K. / As, D.J. et al. | 2011
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RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substratesKakuda, M. / Kuboya, S. / Onabe, K. et al. | 2011
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Rare-earth oxide superlattices on Si(111)Grosse, Frank / Bokoch, Sergiy / Behnke, Steffen / Proessdorf, Andre / Niehle, Michael / Trampert, Achim / Braun, Wolfgang / Riechert, Henning et al. | 2011
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Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8AsLin, C.A. / Chiu, H.C. / Chiang, T.H. / Chang, Y.C. / Lin, T.D. / Kwo, J. / Wang, W.-E. / Dekoster, J. / Heyns, M. / Hong, M. et al. | 2011
- 103
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In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxyPriyantha, W. / Radhakrishnan, G. / Droopad, R. / Passlack, M. et al. | 2010
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Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaNChang, W.H. / Chang, P. / Lee, W.C. / Lai, T.Y. / Kwo, J. / Hsu, C.-H. / Hong, J.M. / Hong, M. et al. | 2010
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Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphirePetukhov, Vladimir / Bakin, Andrey / Tsiaoussis, Ioannis / Rothman, Johan / Ivanov, Sergey / Stoemenos, John / Waag, Andreas et al. | 2011
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Metastable II–VI sulphides: Growth, characterization and stabilityPrior, K.A. / Bradford, C. / Davidson, I.A. / Moug, R.T. et al. | 2010
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Optical characterization of isoelectronic ZnSe1−xOx semiconductorsLin, Y.C. / Chung, H.L. / Ku, J.T. / Chen, C.Y. / Chien, K.F. / Fan, W.C. / Lee, L. / Chyi, J.I. / Chou, W.C. / Chang, W.H. et al. | 2010
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Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applicationsFan, J. / Ouyang, L. / Liu, X. / Ding, D. / Furdyna, J.K. / Smith, D.J. / Zhang, Y.-H. et al. | 2010
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Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (001) substrates by molecular beam epitaxyKumagai, Y. / Imada, S. / Baba, T. / Kobayashi, M. et al. | 2011
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Growth and characterization of C60/GaAs interfaces and C60 doped GaAsNishinaga, Jiro / Horikoshi, Yoshiji et al. | 2010
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Optical and structural properties of Pb1−xEuxTe/CdTe//GaAs (001) heterostructures grown by MBESmajek, E. / Szot, M. / Kowalczyk, L. / Domukhovski, V. / Taliashvili, B. / Dziawa, P. / Knoff, W. / łusakowska, E. / Reszka, A. / Kowalski, B. et al. | 2010
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Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)Fissel, A. / Krügener, J. / Osten, H.J. et al. | 2010
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Nano-clustered Pd catalysts formed on GaN surface for green chemistryHirayama, Motoi / Ueta, Yukiko / Konishi, Tomoya / Tsukamoto, Shiro et al. | 2011
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Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation techniqueAkahane, Kouichi / Yamamoto, Naokatsu et al. | 2010
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Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs (001) grown using different As speciesTakata, Ayami / Oshima, Ryuji / Shoji, Yasushi / Akahane, Kouichi / Okada, Yoshitaka et al. | 2010
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Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dotsDas, A. / Sinha, P. / Kotsar, Y. / Kandaswamy, P.K. / Dimitrakopulos, G.P. / Kehagias, Th. / Komninou, Ph. / Nataf, G. / De Mierry, P. / Monroy, E. et al. | 2010
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High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layersLiu, Wei-Sheng / Wu, Hong-Ming / Liao, Yu-Ann / Chyi, Jen-Inn / Chen, Wen-Yen / Hsu, Tzu-Min et al. | 2010
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Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperatureNgo, C.Y. / Yoon, S.F. / Tanoto, H. / Hui, H.K. / Lim, D.R. / Wong, Vincent / Chua, S.J. et al. | 2010
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Power and temperature dependent magneto-photoluminescence of the asymmetric double layers of quantumdotsLee, Hakjoon / Yoo, Taehee / Lee, Sanghoon / Dobrowolska, M. / Furdyna, J.K. et al. | 2010
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Composition uniformity of site-controlled InAs/GaAs quantum dotsBiasiol, G. / Baranwal, V. / Heun, S. / Prasciolu, M. / Tormen, M. / Locatelli, A. / Mentes, T.O. / Niño, M.A. / Sorba, L. et al. | 2010
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Effects of nano-pattern size on the property of InAs site-controlled quantum dotsCheng, Chien-Chia / Meneou, K. / Cheng, K.Y. et al. | 2010
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Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dotsTommila, J. / Tukiainen, A. / Viheriälä, J. / Schramm, A. / Hakkarainen, T. / Aho, A. / Stenberg, P. / Dumitrescu, M. / Guina, M. et al. | 2010
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Growth and annealing of InAs quantum dots on pre-structured GaAs substratesHelfrich, M. / Hu, D.Z. / Hendrickson, J. / Gehl, M. / Rülke, D. / Gröger, R. / Litvinov, D. / Linden, S. / Wegener, M. / Gerthsen, D. et al. | 2010
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Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light sourceOzaki, N. / Takeuchi, K. / Ohkouchi, S. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. / Hogg, R.A. et al. | 2010
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Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devicesHuggenberger, A. / Schneider, C. / Drescher, C. / Heckelmann, S. / Heindel, T. / Reitzenstein, S / Kamp, M. / Höfling, S. / Worschech, L. / Forchel, A. et al. | 2010
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Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substratesNovikov, P. / Smagina, J. / Vlasov, D. / Deryabin, A. / Kozhukhov, A. / Dvurechenskii, A. et al. | 2010
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Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substratesTukiainen, A. / Tommila, J. / Aho, A. / Schramm, A. / Viheriälä, J. / Ahorinta, R. / Dumitrescu, M. / Pessa, M. / Guina, M. et al. | 2011
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Bimodal optical characteristics of lateral InGaAs quantum dot moleculesThongkamkoon, N. / Patanasemakul, N. / Siripitakchai, N. / Thainoi, S. / Panyakeow, S. / Kanjanachuchai, S. et al. | 2010
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Bandgap engineering of 1.3μm quantum dot structures for terahertz (THz) emissionNgo, C.Y. / Yoon, S.F. / Teng, J.H. et al. | 2010
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Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55μm with low optical degradationMilla, M.J. / Guzmán, A. / Gargallo-Caballero, R. / Ulloa, J.M. / Hierro, A. et al. | 2010
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Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)Kamiya, Itaru / Shirasaka, Takeo / Shimomura, Kenichi / Tex, David M. et al. | 2011
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InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotationThomassen, S. Fretheim / Worren Reenaas, T. / Fimland, B.O. et al. | 2011
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Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrateUgur, A. / Hatami, F. / Masselink, W.T. et al. | 2011
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GaSb quantum rings grown by metal organic molecular beam epitaxyOdashima, S. / Sakurai, S. / Wada, M. / Suemune, I. et al. | 2011
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CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and μ-PL characterisationDavidson, I.A. / Moug, R.T. / Dalgarno, P.A. / Bradford, C. / Warburton, R.J. / Prior, K.A. et al. | 2010
- 241
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Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriersKitada, Takahiro / Takahashi, Tomoya / Ueyama, Hyuga / Morita, Ken / Isu, Toshiro et al. | 2010
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Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiationSmagina, Zh.V. / Novikov, P.L. / Zinovyev, V.A. / Armbrister, V.A. / Teys, S.A. / Dvurechenskii, A.V. et al. | 2010
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Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)Mortada, Hussein / Dentel, Didier / Derivaz, Mickael / Bischoff, Jean-Luc / Denys, Emmanuel / Moubah, Reda / Ulhaq-Bouillet, Corinne / Werckmann, Jacques et al. | 2010
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New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength rangeOhkouchi, S. / Kumagai, N. / Shirane, M. / Igarashi, Y. / Nomura, M. / Ota, Y. / Yorozu, S. / Iwamoto, S. / Arakawa, Y. et al. | 2010
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Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substratesTantiweerasophon, W. / Thainoi, S. / Changmuang, P. / Kanjanachuchai, S. / Rattanathammaphan, S. / Panyakeow, S. et al. | 2011
- 259
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InGaAs quantum dots embedded in DBR-coupled double cavityTzeng, T.E. / Chuang, K.Y. / Liu, Y.C. / Tsuei, B.T. / Lin, E.Y. / Lay, T.S. et al. | 2010
- 263
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Mechanism and applications of local droplet etchingHeyn, Ch. / Stemmann, A. / Klingbeil, M. / Strelow, Ch. / Köppen, T. / Mendach, S. / Hansen, W. et al. | 2010
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Self-assembled GaAs local artificial substrates on Si by droplet epitaxyBietti, S. / Somaschini, C. / Koguchi, N. / Frigeri, C. / Sanguinetti, S. et al. | 2010
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Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(001) by droplet epitaxyBoonpeng, P. / Jevasuwan, W. / Nuntawong, N. / Thainoi, S. / Panyakeow, S. / Ratanathammaphan, S. et al. | 2010
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InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxyJevasuwan, Wipakorn / Boonpeng, Poonyasiri / Thainoi, Supachok / Panyakeow, Somsak / Ratanathammaphan, Somchai et al. | 2010
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Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxySomaschini, C. / Bietti, S. / Fedorov, A. / Koguchi, N. / Sanguinetti, S. et al. | 2010
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Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amountPankaow, Naraporn / Thainoi, Supachok / Panyakeow, Somsak / Ratanathammaphan, Somchai et al. | 2010
- 286
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Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensationSchupp, T. / Meisch, T. / Neuschl, B. / Feneberg, M. / Thonke, K. / Lischka, K. / As, D.J. et al. | 2011
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Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxyUrbańczyk, A. / Hamhuis, G.J. / Nötzel, R. et al. | 2011
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GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowireJabeen, F. / Patriarche, G. / Glas, F. / Harmand, J.-C. et al. | 2010
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On the growth of InAs nanowires by molecular beam epitaxyMartelli, Faustino / Rubini, Silvia / Jabeen, Fauzia / Felisari, Laura / Grillo, Vincenzo et al. | 2010
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Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxyBabu, J. Bubesh / Yoh, Kanji et al. | 2010
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Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxyLugani, Lorenzo / Ercolani, Daniele / Beltram, Fabio / Sorba, Lucia et al. | 2010
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Strain in GaAs–MnAs core–shell nanowires grown by molecular beam epitaxyHilse, M. / Takagaki, Y. / Ramsteiner, M. / Herfort, J. / Breuer, S. / Geelhaar, L. / Riechert, H. et al. | 2010
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Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparisonBreuer, Steffen / Hilse, Maria / Geelhaar, Lutz / Riechert, Henning et al. | 2010
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MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (111)Si substratesPaek, Jihyun / Yamaguchi, Masahito / Amano, Hiroshi et al. | 2010
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Growth and properties of self-assembled InP-nanoneedles on (001) InP by gas source MBEChashnikova, M. / Mogilatenko, A. / Fedosenko, O. / Bryksa, V. / Petrov, A. / Machulik, S. / Semtsiv, M.P. / Neumann, W. / Masselink, W.T. et al. | 2010
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Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorodsTambo, H. / Hasegawa, S. / Kameoka, H. / Zhou, Y.K. / Emura, S. / Asahi, H. et al. | 2010
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GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growthVézian, S. / Alloing, B. / Zúñiga-Pérez, J. et al. | 2010
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Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysisden Hertog, M. / Elouneg-Jamroz, M. / Bellet-Amalric, E. / Bounouar, S. / Bougerol, C. / André, R. / Genuist, Y. / Poizat, J.P. / Kheng, K. / Tatarenko, S. et al. | 2010
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Importance of kinetics effects in the growth of germanium nanowires by vapour–liquid–solid Molecular Beam EpitaxyPorret, C. / Devillers, T. / Jain, A. / Dujardin, R. / Barski, A. et al. | 2010
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Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBETran, Lien / Hatami, Fariba / Masselink, W.T. / Herfort, Jens / Trampert, Achim et al. | 2010
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Photoreflectance study of GaMnAs layers grown by MBEMartínez-Velis, I. / Contreras-Guerrero, R. / Rojas-Ramírez, J.S. / Ramírez-López, M. / Gallardo-Hernández, S. / Kudriatsev, Y. / Vázquez-López, C. / Jiménez-Sandoval, S. / Rangel-Kuoppa, V.-T. / López-López, M. et al. | 2010
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Molecular beam epitaxy of LiMnAsNovák, V. / Cukr, M. / Šobáň, Z. / Jungwirth, T. / Martí, X. / Holý, V. / Horodyská, P. / Němec, P. et al. | 2010
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Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxyTawil, S.N.M. / Krishnamurthy, D. / Kakimi, R. / Emura, S. / Hasegawa, S. / Asahi, H. et al. | 2010
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Cu-doped nitrides: Promising candidates for a nitride based spin-alignerGanz, P.R. / Fischer, G. / Sürgers, C. / Schaadt, D.M. et al. | 2010
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Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)Gao, Cunxu / Brandt, Oliver / Lähnemann, Jonas / Herfort, Jens / Schönherr, Hans-Peter / Jahn, Uwe / Jenichen, Bernd et al. | 2010
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Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperatureHassan, M. / Springholz, G. / Lechner, R.T. / Groiss, H. / Kirchschlager, R. / Bauer, G. et al. | 2010
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Suppression of interfacial intermixing between MBE-grown Heusler alloy Ni2MnIn and (001)InAs or InAs-HEMT structuresBohse, S. / Zolotaryov, A. / Kreuzpaintner, W. / Lott, D. / Kornowski, A. / Stemmann, A. / Heyn, Ch. / Hansen, W. et al. | 2010
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Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial filmHung, H.Y. / Huang, S.Y. / Chang, P. / Lin, W.C. / Liu, Y.C. / Lee, S.F. / Hong, M. / Kwo, J. et al. | 2010
- 376
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Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applicationsLudwig, A. / Roescu, R. / Rai, A.K. / Trunov, K. / Stromberg, F. / Li, M. / Soldat, H. / Ebbing, A. / Gerhardt, N.C. / Hofmann, M.R. et al. | 2010
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Magneto-optical properties of ZnMnTe/ZnSe quantum dotsFan, W.C. / Ku, J.T. / Chou, W.C. / Chen, W.K. / Chang, W.H. / Yang, C.S. / Chia, C.H. et al. | 2010
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Preparation characterization of MnSb–GaAs spin LEDHanna, T. / Yoshida, D. / Munekata, H. et al. | 2010
- 387
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GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxyRichter, M. / Rossel, C. / Webb, D.J. / Topuria, T. / Gerl, C. / Sousa, M. / Marchiori, C. / Caimi, D. / Siegwart, H. / Rice, P.M. et al. | 2010
- 393
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A comparison of the low frequency noise in InSb grown on GaAs and Si by MBEDobbert, Julia / Tran, Lien / Hatami, Fariba / Kunets, Vasyl P. / Salamo, Gregory J. / Ted Masselink, W. et al. | 2010
- 397
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Selective growth of InSb on localized area of Si(100) by molecular beam epitaxyHara, Shinsuke / Iida, Tomoaki / Nishino, Yuichi / Uchida, Akinori / Horii, Hiroyuki / Fujishiro, Hiroki I. et al. | 2010
- 401
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Interface engineering for improved growth of GaSb on Si(111)Proessdorf, Andre / Grosse, Frank / Romanyuk, Oleksandr / Braun, Wolfgang / Jenichen, Bernd / Trampert, Achim / Riechert, Henning et al. | 2010
- 405
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Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layersKyun Noh, Young / Deock Kim, Moon / Eung Oh, Jae / Chul Yang, Woo / Heon Kim, Young et al. | 2011
- 409
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X-ray study of antiphase domains and their stability in MBE grown GaP on SiLétoublon, A. / Guo, W. / Cornet, C. / Boulle, A. / Véron, M. / Bondi, A. / Durand, O. / Rohel, T. / Dehaese, O. / Chevalier, N. et al. | 2010
- 413
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Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemesTang, H. / Baribeau, J.-M. / Aers, G.C. / Fraser, J. / Rolfe, S. / Bardwell, J.A. et al. | 2010
- 418
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GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxyDogan, Pinar / Brandt, Oliver / Pfüller, Carsten / Bluhm, Anne-Kathrin / Geelhaar, Lutz / Riechert, Henning et al. | 2011
- 422
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Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterizationAlzoubi, T. / Usman, M. / Benyoucef, M. / Reithmaier, J.P. et al. | 2010
- 426
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Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrateLiang, Y.Y. / Yoon, S.F. / Ngo, C.Y. / Tanoto, H. / Chen, K.P. / Loke, W.K. / Fitzgerald, E.A. et al. | 2010
- 431
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Nano-crystalline Sb-based compound semiconductor formed on siliconYamamoto, Naokatsu / Akahane, Kouichi / Kawanishi, Tetsuya / Sotobayashi, Hideyuki et al. | 2010
- 434
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MBE growth of VCSELs for high volume applicationsJäger, Roland / Riedl, Michael C. et al. | 2010
- 438
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VCSELs with monolithically integrated photodiodes for single-fiber bidirectional data transmission in the Gbit/s rangeWahl, D. / Kern, A. / Stach, M. / Rinaldi, F. / Rösch, R. / Michalzik, R. et al. | 2010
- 442
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Comparison of InP- and GaSb-based VCSELs emitting at 2.3μm suitable for carbon monoxide detectionBoehm, Gerhard / Bachmann, Alexander / Rosskopf, Jürgen / Ortsiefer, Markus / Chen, Jia / Hangauer, Andreas / Meyer, Ralf / Strzoda, Rainer / Amann, Markus-Christian et al. | 2010
- 442
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Comparison of InP- and GaSb-based VCSELs emitting at 2.3 micrometer suitable for carbon monoxide detectionBoehm, Gerhard / Bachmann, Alexander / Rosskopf, Juergen / Ortsiefer, Markus / Chen, Jia / Hangauer, Andreas / Meyer, Ralf / Strzoda, Rainer / Amann, Markus-Christian et al. | 2011
- 446
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MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5–2.7μmVizbaras, Kristijonas / Bachmann, Alexander / Arafin, Shamsul / Saller, Kai / Sprengel, Stefan / Boehm, Gerhard / Meyer, Ralf / Amann, Markus-Christian et al. | 2010
- 446
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MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 micrometerVizbaras, Kristijonas / Bachmann, Alexander / Arafin, Shamsul / Saller, Kai / Sprengel, Stefan / Boehm, Gerhard / Meyer, Ralf / Amann, Markus-Christian et al. | 2011
- 450
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Quantum dot lasers grown by gas source molecular-beam epitaxyGong, Q. / Chen, P. / Li, S.G. / Lao, Y.F. / Cao, C.F. / Xu, C.F. / Zhang, Y.G. / Feng, S.L. / Ma, C.H. / Wang, H.L. et al. | 2010
- 454
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Power scalable 2.5μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxyPaajaste, J. / Koskinen, R. / Nikkinen, J. / Suomalainen, S. / Okhotnikov, O.G et al. | 2010
- 457
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Lasing in compact microdisks with InAs quantum dots in a well structureHsing, J.Y. / Tzeng, T.E. / Chuang, K.Y. / Lay, T.S. / Kuo, M.Y. / Tsai, Y.Y. / Hsu, K.S. / Shih, M.H. et al. | 2010
- 460
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Growth and characterization of mid-infrared microdisk lasers operating in continuous-wave mode up to 2°CEibelhuber, M. / Schwarzl, T. / Pichler, S. / Heiss, W. / Springholz, G. et al. | 2010
- 463
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Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layerUeno, Koichiro / Gomes Camargo, Edson / Morishita, Tomohiro / Moriyasu, Yoshitaka / Goto, Hiromasa / Kuze, Naohiro et al. | 2010
- 466
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The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodesTseng, Chi-Che / Lin, Wei-Hsun / Wu, Shung-Yi / Chen, Shu-Han / Lin, Shih-Yen et al. | 2010
- 470
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High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)Zhang, Meng / Banerjee, Animesh / Bhattacharya, Pallab et al. | 2010
- 473
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InGaAs self-assembly quantum dot for high-speed 1300nm electroabsorption modulatorLin, Chuan-Han / Wu, Jui-pin / Kuo, Yu-zheng / Chiu, Yi-jen / Tzeng, T.E. / Lay, T.S. et al. | 2011
- 477
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Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriersSamal, N. / Sadofyev, Y.G. / Annamalai, S. / Chen, L. / Samal, A. / Johnson, S.R. et al. | 2010
- 480
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Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisationGrasse, Christian / Katz, Simeon / Böhm, Gerhard / Vizbaras, Augustinas / Meyer, Ralf / Amann, Markus-Christian et al. | 2010
- 484
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Scaling the output power of quantum-cascade lasers with a number of cascadesFedosenko, O. / Chashnikova, M. / Machulik, S. / Kischkat, J. / Klinkmüller, M. / Aleksandrova, A. / Monastyrskyi, G. / Semtsiv, M.P. / Masselink, W.T. et al. | 2010
- 488
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InP-based mid-infrared quantum-cascade laser grown on pre-patterned waferFedosenko, O. / Chashnikova, M. / Machulik, S. / Kischkat, J. / Klinkmüller, M. / Aleksandrova, A. / Monastyrskyi, G. / Semtsiv, M.P. / Masselink, T.W. et al. | 2011
- 491
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InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infraredLiverini, V. / Bismuto, A. / Nevou, L. / Beck, M. / Gramm, F. / Müller, E. / Faist, J. et al. | 2010
- 496
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Room temperature absorption in laterally biased quantum infrared detectors fabricated by MBE regrowthGuzmán, Álvaro / San-Román, Rocío / Hierro, Adrián et al. | 2010
- 501
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Gas source MBE grown Al0.52In0.48P photovoltaic detectorLi, C. / Zhang, Y.G. / Gu, Y. / Wang, K. / Li, A.Z. / Li, Hsby / Shao, X.M. / Fang, J.X. et al. | 2010
- 504
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Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxyKawaharazuka, A. / Onomitsu, K. / Nishinaga, J. / Horikoshi, Y. et al. | 2011
- 508
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Photovoltaic response of coupled InGaAs quantum dotsChuang, K.Y. / Tzeng, T.E. / Liu, Y.C. / Tzeng, K.D. / Lay, T.S. et al. | 2011
- 511
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MBE—Enabling technology beyond Si CMOSChang, P. / Lee, W.C. / Lin, T.D. / Hsu, C.H. / Kwo, J. / Hong, M. et al. | 2010
- 518
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Achieving very high drain current of 1.23mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFETLin, T.D. / Chang, P. / Wu, Y.D. / Chiu, H.C. / Kwo, J. / Hong, M. et al. | 2011
- 522
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Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrateGeka, Hirotaka / Yamada, Satoshi / Toita, Masato / Nagase, Kazuhiro / Kuze, Naohiro et al. | 2011
- 525
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InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxyTeng, Teng / Ai, Likun / Xu, Anhuai / Sun, Hao / Zhu, Fuying / Qi, Ming et al. | 2011
- 529
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MBE growth of high conductivity single and multiple AlN/GaN heterojunctionsCao, Yu / Wang, Kejia / Li, Guowang / Kosel, Tom / Xing, Huili / Jena, Debdeep et al. | 2010
- I
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Author index| 2011
- IFC
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Editorial Board| 2011
- v
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Contents| 2011
- XI
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Subject index| 2010