In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides (Englisch)
- Neue Suche nach: Gao, Peng
- Neue Suche nach: Wang, Zhenzhong
- Neue Suche nach: Fu, Wangyang
- Neue Suche nach: Liao, Zhaoliang
- Neue Suche nach: Liu, Kaihui
- Neue Suche nach: Wang, Wenlong
- Neue Suche nach: Bai, Xuedong
- Neue Suche nach: Wang, Enge
- Neue Suche nach: Gao, Peng
- Neue Suche nach: Wang, Zhenzhong
- Neue Suche nach: Fu, Wangyang
- Neue Suche nach: Liao, Zhaoliang
- Neue Suche nach: Liu, Kaihui
- Neue Suche nach: Wang, Wenlong
- Neue Suche nach: Bai, Xuedong
- Neue Suche nach: Wang, Enge
In:
Micron
;
41
, 4
;
301-305
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides
-
Beteiligte:Gao, Peng ( Autor:in ) / Wang, Zhenzhong ( Autor:in ) / Fu, Wangyang ( Autor:in ) / Liao, Zhaoliang ( Autor:in ) / Liu, Kaihui ( Autor:in ) / Wang, Wenlong ( Autor:in ) / Bai, Xuedong ( Autor:in ) / Wang, Enge ( Autor:in )
-
Erschienen in:Micron ; 41, 4 ; 301-305
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Verlag:
- Neue Suche nach: Elsevier Ltd
-
Erscheinungsdatum:30.11.2009
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Format / Umfang:5 pages
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ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
-
Sprache:Englisch
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Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 41, Ausgabe 4
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In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxidesGao, Peng / Wang, Zhenzhong / Fu, Wangyang / Liao, Zhaoliang / Liu, Kaihui / Wang, Wenlong / Bai, Xuedong / Wang, Enge et al. | 2009
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