A study of GaN etching characteristics using HBr-based inductively coupled plasmas (Englisch)
Nationallizenz
- Neue Suche nach: Kim, D.W.
- Neue Suche nach: Jeong, C.H.
- Neue Suche nach: Lee, H.Y.
- Neue Suche nach: Kim, H.S.
- Neue Suche nach: Sung, Y.J.
- Neue Suche nach: Yeom, G.Y.
- Neue Suche nach: Kim, D.W.
- Neue Suche nach: Jeong, C.H.
- Neue Suche nach: Lee, H.Y.
- Neue Suche nach: Kim, H.S.
- Neue Suche nach: Sung, Y.J.
- Neue Suche nach: Yeom, G.Y.
In:
Solid-State Electronics
;
47
, 3
;
549-552
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:A study of GaN etching characteristics using HBr-based inductively coupled plasmas
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Beteiligte:Kim, D.W. ( Autor:in ) / Jeong, C.H. ( Autor:in ) / Lee, H.Y. ( Autor:in ) / Kim, H.S. ( Autor:in ) / Sung, Y.J. ( Autor:in ) / Yeom, G.Y. ( Autor:in )
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Erschienen in:Solid-State Electronics ; 47, 3 ; 549-552
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Verlag:
- Neue Suche nach: Elsevier Science Ltd
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Erscheinungsdatum:01.01.2002
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 47, Ausgabe 3
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 385
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Editorial(s)Chen, W. M. / O`Reilly, E. P. / Forchel, A. / Tu, C. W. et al. | 2003
- 385
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PrefaceChen, Weimin M. et al. | 2003
- 387
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InSb1−xNx growth and devicesAshley, T. / Burke, T.M. / Pryce, G.J. / Adams, A.R. / Andreev, A. / Murdin, B.N. / O’Reilly, E.P. / Pidgeon, C.R. et al. | 2002
- 395
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Interest of the orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxyBlanc, S. / Arnoult, A. / Carrère, H. / Fontaine, C. et al. | 2002
- 399
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Properties of 1.3 (micro)m InGaNAs laser material grown by MBE using a N2-Ar RF plasmaGupta, J.A. et al. | 2003
- 399
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Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasmaGupta, J.A / Barrios, P.J / Aers, G.C / Williams, R.L / Ramsey, J / Wasilewski, Z.R et al. | 2002
- 399
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Properties of 1.3 mm InGaNAs laser material grown by MBE using a N2/Ar RF plasmaGupta, J. A. / Barrios, P. J. / Aers, G. C. / Williams, R. L. / Ramsey, J. / Wasilewski, Z. R. et al. | 2003
- 407
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Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAsBullough, T.J. / Davies, S. / Thomas, S. / Joyce, T.B. / Chalker, P.R. et al. | 2002
- 413
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Influence of preparation parameters for low-energy ion beam nitridation of III–V semiconductor surfacesHecht, J.-D. / Frost, F. / Sidorenko, A. / Hirsch, D. / Neumann, H. / Schindler, A. / Krasnikow, S. / Zhang, L. / Chassé, T. et al. | 2002
- 419
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Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 μm laser diodesCarrère, H. / Arnoult, A. / Ricard, A. / Marie, X. / Amand, Th. / Bedel-Pereira, E. et al. | 2002
- 419
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Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 mm laser diodesCarrere, H. / Arnoult, A. / Ricard, A. / Marie, X. / Amand, T. / Bedel-Pereira, E. et al. | 2003
- 419
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Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 (micro)m laser diodesCarrère, H. et al. | 2003
- 425
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Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum wellWhite, S.L. / Thomas, S. / Joyce, T.B. / Bullough, T.J. / Chalker, P.R. / Noakes, T.C.Q. / Bailey, P. / Mazzucato, S. / Balkan, N. et al. | 2002
- 431
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Diffusion at the interfaces of InGaNAs/GaAs quantum wellsPeng, C.S / Pavelescu, E.-M / Jouhti, T / Konttinen, J / Pessa, M et al. | 2002
- 437
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Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wellsKlar, P.J. / Grüning, H. / Heimbrodt, W. / Koch, J. / Stolz, W. / Tomić, S. / O’Reilly, E.P. et al. | 2002
- 443
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Derivation of a 10-band model for dilute nitride semiconductorsLindsay, A. / Tomić, S. / O’Reilly, E.P. et al. | 2002
- 447
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Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructuresPolimeni, A. / Bissiri, M. / Baldassarri Höger von Högersthal, G. / Capizzi, M. / Giubertoni, D. / Barozzi, M. / Bersani, M. / Gollub, D. / Fischer, M. / Forchel, A. et al. | 2002
- 455
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LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloysTite, T. / Pagès, O. / Ajjoun, M. / Laurenti, J.P. / Bormann, D. / Tournié, E. / Maksimov, O. / Tamargo, M.C. et al. | 2002
- 461
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Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopyWagner, J. / Geppert, T. / Köhler, K. / Ganser, P. / Maier, M. et al. | 2002
- 467
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Recombination processes in N-containing III–V ternary alloysBuyanova, I.A / Chen, W.M / Tu, C.W et al. | 2002
- 477
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Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 mmPinault, M. A. / Tournie, E. et al. | 2003
- 477
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Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 μmPinault, M.-A. / Tournié, E. et al. | 2002
- 477
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Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 (micro)mPinault, M.-A. et al. | 2003
- 483
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Optical properties of GaInNAs/GaAs quantum wellsMazzucato, S. / Erol, A. / Potter, R.J. / Balkan, N. / Chalker, P.R. / Thomas, S. / Joyce, T.B. / Bullough, T.J. et al. | 2002
- 489
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Optical investigations of InGaAsN/GaAs single quantum well structuresSitarek, P / Ryczko, K / Sęk, G / Misiewicz, J / Fischer, M / Reinhardt, M / Forchel, A et al. | 2002
- 493
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Temperature behavior of the GaNP band gap energyRudko, G.Yu. / Buyanova, I.A. / Chen, W.M. / Xin, H.P. / Tu, C.W. et al. | 2002
- 497
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Lattice distortions effect on exciton bound to nitrogen in GaP-rich A3B5 alloysParfenova, I.I. et al. | 2002
- 501
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Carrier recombination processes in MOVPE and MBE grown 1.3 mm GaInNAs edge emitting lasersFehse, R. / Adams, A. R. / Sweeney, S. J. / Tomic, S. / Riechert, H. / Ramakrishnan, A. et al. | 2003
- 501
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Carrier recombination processes in MOVPE and MBE grown 1.3 (micro)m GaInNAs edge emitting lasersFehse, R. et al. | 2003
- 501
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Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasersFehse, R. / Adams, A.R. / Sweeney, S.J. / Tomic, S. / Riechert, H. / Ramakrishnan, A. et al. | 2002
- 507
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Enhanced optical and structural properties of strain-compensated 1.3-(micro)m GaInNAs-GaNAs-GaAs quantum-well structures by insertion of strain-mediating layersPavelescu, E.-M. et al. | 2003
- 507
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Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layersPavelescu, E.-M. / Peng, C.S. / Jouhti, T. / Konttinen, J. / Dumitrescu, M. / Li, W. / Pessa, M. et al. | 2002
- 507
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Enhanced optical and structural properties of strain-compensated 1.3-mm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layersPavelescu, E. M. / Peng, C. S. / Jouhti, T. / Konttinen, J. / Dumitrescu, M. / Li, W. / Pessa, M. et al. | 2003
- 513
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Microscopic theory of gain and spontaneous emission in GaInNAs laser materialHader, J. / Koch, S.W. / Moloney, J.V. et al. | 2002
- 523
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Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1−xPx SQW structure LED grown by laser-assisted metal-organic chemical vapor depositionKikawa, Junjiroh / Yoshida, Seikoh / Itoh, Yoshiteru et al. | 2002
- 529
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Er diffusion into gallium nitrideChen, Chii-Chang / Ting, Yi-Sheng / Lee, Chien-Chieh / Chi, Gou-Chung / Chakraborty, Purushottam / Chini, Tapas / Chuang, Hui-Wen / Tsang, Jian-Shihn / Kuo, Cheng-Ta / Tsai, Wen-Chung et al. | 2002
- 533
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Pulsed laser deposition of manganese doped GaN thin filmsO’Mahony, D. / Lunney, J.G. / Tobin, G. / McGlynn, E. et al. | 2002
- 539
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Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxyKim, H. / Andersson, T.G. / Chauveau, J.-M. / Trampert, A. et al. | 2002
- 543
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Hunting for a single-source precursor: toward stoichiometry controlled CVD of 13–15 compositesTimoshkin, A.Y et al. | 2002
- 549
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A study of GaN etching characteristics using HBr-based inductively coupled plasmasKim, D.W. / Jeong, C.H. / Lee, H.Y. / Kim, H.S. / Sung, Y.J. / Yeom, G.Y. et al. | 2002
- 553
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Microstructure of planar defects and their interactions in wurtzite GaN filmsKioseoglou, J. / Komninou, Ph. / Dimitrakopulos, G.P. / Kehagias, Th. / Polatoglou, H.M. / Nouet, G. / Karakostas, Th. et al. | 2002
- 559
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Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasmaSanguino, P. / Niehus, M. / Melo, L.V. / Schwarz, R. / Koynov, S. / Monteiro, T. / Soares, J. / Alves, H. / Meyer, B.K. et al. | 2002
- 565
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Study of inversion domain pyramids formed during the GaN:Mg growthMartı́nez-Criado, G. / Cros, A. / Cantarero, A. / Joshi, N.V. / Ambacher, O. / Stutzmann, M. et al. | 2002
- 569
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Optical properties and transport in PLD-GaNNiehus, M. / Sanguino, P. / Monteiro, T. / Soares, M.J. / Pereira, E. / Vieira, M. / Koynov, S. / Schwarz, R. et al. | 2002
- 575
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Thermal annealing effects on the optical gain of InGaN/GaN quantum well structuresChen, Chii-Chang / Hsueh, Tao-Hung / Ting, Yi-Sheng / Chi, Gou-Chung / Chang, Chin-An / Wang, S.C. et al. | 2002
- 579
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Photoluminescence of GaN layers studied with two-color spectroscopyWojdak, M. / Klik, M.A.J. / Forcales, M. / Gregorkiewicz, T. / Wells, J.-P.R. / Pakuła, K. / Baranowski, J.M. / Porowski, S. et al. | 2002
- 583
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Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructuresSukach, G.A. / Smertenko, P.S. / Shepel, L.G. / Ciach, R. / Kuzma, M. et al. | 2002
- 589
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A high-power AlGaN/GaN heterojunction field-effect transistorYoshida, Seikoh / Ishii, Hirotatsu / Li, Jiang / Wang, Deliang / Ichikawa, Masakazu et al. | 2002