subject index (Englisch)
In:
Materials Science & Engineering B: Solid-State Materials for Advanced Technology
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124-125
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524-532
;
2005
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:subject index
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Erschienen in:Materials Science & Engineering B: Solid-State Materials for Advanced Technology ; 124-125 ; 524-532
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Verlag:
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Erscheinungsdatum:01.01.2005
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Format / Umfang:9 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 124-125
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologiesPelaz, Lourdes / Duffy, Ray / Cristiano, Fuccio / Colombeau, Benjamin / Uppal, Suresh et al. | 2005
- 3
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New materials and device architectures for the end-of-roadmap CMOS nodesSkotnicki, Thomas / Boeuf, Frederic / Cerutti, Robin / Monfray, Stephane / Fenouillet-Beranger, Claire / Muller, Markus / Pouydebasque, Arnaud et al. | 2005
- 8
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Engineered substrates and their future role in microelectronicsFitzgerald, Eugene A. et al. | 2005
- 16
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Strain engineering in SOI-type materials for future technologiesGhyselen, Bruno et al. | 2005
- 24
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Advanced activation of ultra-shallow junctions using flash-assisted RTPLerch, W. / Paul, S. / Niess, J. / McCoy, S. / Selinger, T. / Gelpey, J. / Cristiano, F. / Severac, F. / Gavelle, M. / Boninelli, S. et al. | 2005
- 32
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Dissolution kinetics of B clusters in crystalline SiSalvador, D. De / Napolitani, E. / Bisognin, G. / Carnera, A. / Bruno, E. / Mirabella, S. / Impellizzeri, G. / Priolo, F. et al. | 2005
- 39
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Boron diffusion in strained and strain-relaxed SiGeWang, C.C. / Sheu, Y.M. / Liu, Sally / Duffy, R. / Heringa, A. / Cowern, N.E.B. / Griffin, P.B. et al. | 2005
- 45
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Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologiesEyben, P. / Janssens, T. / Vandervorst, W. et al. | 2005
- 54
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Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technologyGiannazzo, F. / Raineri, V. / Mirabella, S. / Bruno, E. / Impellizzeri, G. / Priolo, F. et al. | 2005
- 62
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Ab initio assisted process modeling for Si-based nanoelectronic devicesWindl, Wolfgang et al. | 2005
- 72
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Atomistic simulations in Si processing: Bridging the gap between atoms and experimentsMarqués, Luis A. / Pelaz, Lourdes / López, Pedro / Aboy, María / Santos, Iván / Barbolla, Juan et al. | 2005
- 81
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Trends, demands and challenges in TCADBork, Ingo / Moroz, Victor / Bomholt, Lars / Pramanik, Dipu et al. | 2005
- 86
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Dislocation engineering for Si-based light emitting diodesGwilliam, R. / Lourenço, M.A. / Milosavljevic, M. / Homewood, K.P. / Shao, G. et al. | 2005
- 93
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Recent advances in nanoparticle memoriesTsoukalas, D. / Dimitrakis, P. / Kolliopoulou, S. / Normand, P. et al. | 2005
- 102
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Improved thermal stability and hole mobilities in a strained-Si/strained-Si1−yGey/strained-Si heterostructure grown on a relaxed Si1−xGex bufferGupta, Saurabh / Lee, Minjoo L. / Isaacson, David M. / Fitzgerald, Eugene A. et al. | 2005
- 107
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Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETsOlsen, S.H. / Dobrosz, P. / Escobedo-Cousin, E. / Bull, S.J. / O’Neill, A.G. et al. | 2005
- 113
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SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxyBogumilowicz, Y. / Hartmann, J.M. / Cherkashin, N. / Claverie, A. / Rolland, G. / Billon, T. et al. | 2005
- 118
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Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrateCherkashin, N. / Hÿtch, M.J. / Snoeck, E. / Claverie, A. / Hartmann, J.M. / Bogumilowicz, Y. et al. | 2005
- 123
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XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substratesFranco, N. / Barradas, N.P. / Alves, E. / Vallêra, A.M. / Morris, R.J.H. / Mironov, O.A. / Parker, E.H.C. et al. | 2005
- 127
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Raman spectroscopy of Si1−xGex epilayersPezzoli, F. / Martinelli, Lucio / Grilli, E. / Guzzi, M. / Sanguinetti, S. / Bollani, M. / Chrastina, H.D. / Isella, G. / Känel, H. von / Wintersberger, E. et al. | 2005
- 132
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Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilutionFu, Y.Q. / Luo, J.K. / Milne, S.B. / Flewitt, A.J. / Milne, W.I. et al. | 2005
- 138
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Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devicesTeixeira, Ricardo Cotrin / Doi, Ioshiaki / Zakia, Maria Beny Pinto / Diniz, José Alexandre / Swart, Jacobus Willibrordus et al. | 2005
- 143
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Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)Usuda, Koji / Numata, Toshinori / Irisawa, Toshifumi / Hirashita, Norio / Takagi, Shinichi et al. | 2005
- 148
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Investigation of Si/SiGe/Si on Si-on-insulator by high resolution electron microscopy and synchrotron radiation double-crystal topographyMa, T.D. / Tu, H.L. / Shao, B.L. / Liu, A.S. / Hu, G.Y. et al. | 2005
- 153
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Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structureDi, Zengfeng / Zhang, Miao / Liu, Weili / Zhu, Ming / Lin, Chenglu / Chu, Paul K. et al. | 2005
- 158
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Wafer bonding involving strain-relaxed SiGeRadu, I. / Singh, R. / Reiche, M. / Gösele, U. / Christiansen, S.H. et al. | 2005
- 162
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Investigation of hydrogen implantation-induced blistering in SiGeSingh, R. / Radu, I. / Reiche, M. / Scholz, R. / Webb, D. / Gösele, U. / Christiansen, S.H. et al. | 2005
- 166
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Ion implantation and electron irradiation damage in unstrained germanium and silicon–germanium alloysPeaker, A.R. / Markevich, V.P. / Murin, L.I. / Abrosimov, N.V. / Litvinov, V.V. et al. | 2005
- 170
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Structural characterisation of self-implanted Si after HT-HP treatmentRzodkiewicz, W. / Kudła, A. / Misiuk, A. / Surma, B. / Bąk-Misiuk, J. et al. | 2005
- 174
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Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatmentMisiuk, A. / Surma, B. / Barcz, A. / Orlinska, K. / Bak-Misiuk, J. / Antonova, I.V. / Dub, S. et al. | 2005
- 179
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Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonanceStesmans, A. / Afanas’ev, V.V. et al. | 2005
- 184
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Electron–electron interaction in p-SiGe/Ge quantum wellsRössner, Benjamin / von Känel, Hans / Chrastina, Daniel / Isella, Giovanni / Batlogg, Bertram et al. | 2005
- 188
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A comparative study on ultra-shallow junction formation using co-implantation with fluorine or carbon in pre-amorphized siliconGraoui, Houda / Foad, Majeed A. et al. | 2005
- 192
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Effect of fluorine on boron thermal diffusion in the presence of point defectsKham, M.N. / El Mubarek, H.A.W. / Bonar, J.M. / Ashburn, P. et al. | 2005
- 196
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Evaluation of BBr2+ and B++Br+ implants in siliconSharp, J.A. / Gwilliam, R.M. / Sealy, B.J. / Jeynes, C. / Hamilton, J.J. / Kirkby, K.J. et al. | 2005
- 200
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Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scatteringCapello, L. / Metzger, T.H. / Werner, M. / van den Berg, J.A. / Servidori, M. / Herden, M. / Feudel, T. et al. | 2005
- 205
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Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowthAboy, Maria / Pelaz, Lourdes / Barbolla, Juan / Duffy, R. / Venezia, V.C. et al. | 2005
- 210
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Suppression of boron interstitial clusters in SOI using vacancy engineeringSmith, A.J. / Colombeau, B. / Gwilliam, R. / Cowern, N.E.B. / Sealy, B.J. / Milosavljevic, M. / Collart, E. / Gennaro, S. / Bersani, M. / Barozzi, M. et al. | 2005
- 215
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Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJHamilton, J.J. / Collart, E.J.H. / Colombeau, B. / Bersani, M. / Giubertoni, D. / Sharp, J.A. / Cowern, N.E.B. / Kirkby, K.J. et al. | 2005
- 219
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Millisecond flash annealing: Applications for USJ formation and optimization of device electrical characteristicsFoggiato, John / Yoo, Woo Sik et al. | 2005
- 223
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Novel approaches to improve laser annealed SOI-MOSFETsHerrmann, T. / Feudel, Th. / Horstmann, M. / Hoentschel, J. / Herrmann, L. / Herden, M. / Klix, W. / Stenzel, R. et al. | 2005
- 228
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Boron distribution in silicon after excimer laser annealing with multiple pulsesMonakhov, E.V. / Svensson, B.G. / Linnarsson, M.K. / La Magna, A. / Italia, M. / Privitera, V. / Fortunato, G. / Cuscunà, M. / Mariucci, L. et al. | 2005
- 232
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Excimer laser annealing of B and BF2 implanted SiMonakhov, E.V. / Svensson, B.G. / Linnarsson, M.K. / La Magna, A. / Italia, M. / Privitera, V. / Fortunato, G. / Cuscunà, M. / Mariucci, L. et al. | 2005
- 235
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Modeling and experimental verification of the 300mm Ar anneal processMüller, T. / Wahlich, R. / Krottenthaler, P. / Studener, J. / Kühhorn, A. / Ammon, W.v. et al. | 2005
- 241
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The effect of biaxial strain on impurity diffusion in Si and SiGeLarsen, Arne Nylandsted / Zangenberg, Nikolaj / Fage-Pedersen, Jacob et al. | 2005
- 245
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Boron diffusion in amorphous siliconVenezia, V.C. / Duffy, R. / Pelaz, L. / Hopstaken, M.J.P. / Maas, G.C.J. / Dao, T. / Tamminga, Y. / Graat, P. et al. | 2005
- 249
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Boron lattice location in room temperature ion implanted Si crystalPiro, A.M. / Romano, L. / Mirabella, S. / Grimaldi, M.G. et al. | 2005
- 253
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B implanted at room temperature in crystalline Si: B defect formation and dissolutionRomano, L. / Piro, A.M. / Mirabella, S. / Grimaldi, M.G. et al. | 2005
- 257
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Submicron confinement effect on electrical activation of B implanted in SiBruno, E. / Mirabella, S. / Impellizzeri, G. / Priolo, F. / Giannazzo, F. / Raineri, V. / Napolitani, E. et al. | 2005
- 261
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Injection of point defects during annealing of low energy As implanted siliconTsamis, C. / Skarlatos, D. / Valamontes, V. / Tsoukalas, D. / BenAssayag, G. / Claverie, A. / Lerch, W. et al. | 2005
- 266
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Boron interaction with extended defects induced by He–H co-implantation in SiGaudin, G. / Cayrel, F. / Bongiorno, C. / Jérisian, R. / Dubois, C. / Raineri, V. / Alquier, D. et al. | 2005
- 271
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Boron diffusion in presence of defects induced by helium implantationCayrel, F. / Alquier, D. / Dubois, C. / Jérisian, R. et al. | 2005
- 275
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Platinum in-diffusion controlled by radiation defects for advanced lifetime control in high power silicon devicesHazdra, P. / Vobecký, J. et al. | 2005
- 280
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Substrate influence on the outdiffusion of antimony dopant in monocrystalline siliconLabbani, R. / Halimi, R. et al. | 2005
- 283
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Positron annihilation studies of high dose Sb implanted siliconSchut, H. / Eijt, S.W.H. / Beling, C.D. / Ho, K. / Takamura, Y. et al. | 2005
- 288
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Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphineKalkofen, Bodo / Lisker, Marco / Burte, Edmund P. et al. | 2005
- 293
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Dislocation–impurity interaction in SiYonenaga, I. et al. | 2005
- 297
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Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski siliconHassen, M. / Ben Jaballah, A. / Hajji, M. / Rahmouni, H. / Selmi, A. / Ezzaouia, H. et al. | 2005
- 301
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Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)Heo, Jinhee / Kim, Deoksu / Kim, Chung woo / Chung, Ilsub et al. | 2005
- 305
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Differential Hall profiling of ultra-shallow junctions in Si and SOIBennett, N.S. / Smith, A.J. / Colombeau, B. / Gwilliam, R. / Cowern, N.E.B. / Sealy, B.J. et al. | 2005
- 310
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All electrical resistivity profiling technique for ion implanted semiconductor materialsDaliento, S. / Mele, L. / Spirito, P. / Limata, B.N. et al. | 2005
- 314
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Interstitial injection during oxidation of very low energy nitrogen-implanted siliconSkarlatos, D. / Tsamis, C. / Perego, M. / Fanciulli, M. / Tsoukalas, D. et al. | 2005
- 319
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Influence of the spacer dielectric processes on PMOS junction propertiesMorin, Pierre / Wacquant, Francois / Juhel, Marc / Laviron, Cyrille / Lenoble, D. et al. | 2005
- 323
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Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOIXu, Hui / Lampin, Evelyne / Dubois, Emmanuel / Bardy, Serge / Murray, Franck et al. | 2005
- 327
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Characteristics of silicon p–n junction formed by ion implantation with in situ ultrasound treatmentMelnik, V.P. / Olikh, Y.M. / Popov, V.G. / Romanyuk, B.M. / Goltvyanskii, Y.V. / Evtukh, A.A. et al. | 2005
- 331
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Effect of temperature on capacitance–voltage characteristics of SOIJayatissa, Ahalapitiya H. / Li, Zhiyu et al. | 2005
- 335
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Two-dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristicsAlwan, M. / Beydoun, B. / Ketata, K. / Zoaeter, M. et al. | 2005
- 341
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Formation of buried insulating island-like SiO2 layer in siliconFrantskevich, A.V. / Fedotov, A.K. / Frantskevich, N.V. / Mazanik, A.V. / Rau, E.I. / Kulinkayskas, V.S. et al. | 2005
- 345
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Carrier recombination velocities at the SiO2/Si interface investigated by a photo-thermal reflection microscopyIkari, T. / Fukuyama, A. / Murata, T. / Suemitsu, M. / Haddad, N. / Reita, V. / Roger, J.P. / Fournier, D. et al. | 2005
- 349
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Leakage current and deep levels in CoSi2 silicided junctionsCodegoni, D. / Carnevale, G.P. / De Marco, C. / Mica, I. / Polignano, M.L. et al. | 2005
- 354
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Fabrication of 100nm gate length MOSFET's using a novel carbon nanotube-based nano-lithographyDerakhshandeh, J. / Abdi, Y. / Mohajerzadeh, S. / Hosseinzadegan, H. / Soleimani, E. Asl. / Radamson, H. et al. | 2005
- 359
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Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfacesRavichandran, Karthik / Windl, Wolfgang et al. | 2005
- 363
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Local vibrations on hydrogen dimers in dilute SiGe crystalline solutionsCoutinho, J. / Torres, V.J.B. / Pereira, R.N. / Jones, R. / Öberg, S. / Briddon, P.R. et al. | 2005
- 368
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Ab initio calculations of the interaction between native point defects in siliconHobler, G. / Kresse, G. et al. | 2005
- 372
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Molecular dynamics characterization of as-implanted damage in siliconSantos, Iván / Marqués, Luis A. / Pelaz, Lourdes / López, Pedro / Aboy, María / Barbolla, Juan et al. | 2005
- 376
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Analytic model for ion channeling in successive implantations in crystalline siliconStrauss, S. / Zechner, C. / Terterian, A. / Gautschi, R. / Erlebach, A. / Scholze, A. et al. | 2005
- 379
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Amorphous layer depth dependence on implant parameters during Si self-implantationLopez, Pedro / Pelaz, Lourdes / Marques, Luis A. / Barbolla, Juan / Gossmann, H.-J.L. / Agarwal, Aditya / Kimura, Kenji / Matsushita, Tomoyoshi et al. | 2005
- 383
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Comprehensive modeling of ion-implant amorphization in siliconMok, K.R.C. / Jaraiz, M. / Martin-Bragado, I. / Rubio, J.E. / Castrillo, P. / Pinacho, R. / Srinivasan, M.P. / Benistant, F. et al. | 2005
- 386
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Ion-implant simulations: The effect of defect spatial correlation on damage accumulationMok, K.R.C. / Jaraiz, M. / Martin-Bragado, I. / Rubio, J.E. / Castrillo, P. / Pinacho, R. / Srinivasan, M.P. / Benistant, F. et al. | 2005
- 389
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Bimodal distribution of damage morphology generated by ion implantationMok, K.R.C. / Jaraiz, M. / Martin-Bragado, I. / Rubio, J.E. / Castrillo, P. / Pinacho, R. / Srinivasan, M.P. / Benistant, F. et al. | 2005
- 392
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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulationsRubio, J.E. / Jaraiz, M. / Martin-Bragado, I. / Castrillo, P. / Pinacho, R. / Barbolla, J. et al. | 2005
- 397
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Optimisation of the parameters of an extended defect model applied to non-amorphizing implantsLampin, E. / Cristiano, F. / Lamrani, Y. / Connetable, D. et al. | 2005
- 401
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Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in siliconZechner, Christoph / Zographos, Nikolas / Matveev, Dmitri / Erlebach, Axel et al. | 2005
- 404
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Physically based modeling of dislocation loops in ion implantation processing in siliconCastrillo, P. / Martin-Bragado, I. / Pinacho, R. / Jaraiz, M. / Rubio, J.E. / Mok, K.R.C. / Miguel-Herrero, F.J. / Barbolla, J. et al. | 2005
- 409
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A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealingBoucard, F. / Roger, F. / Chakarov, I. / Zhuk, V. / Temkin, M. / Montagner, X. / Guichard, E. / Mathiot, D. et al. | 2005
- 415
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An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in siliconMarcon, J. / Ihaddadene-Le Coq, L. / Masmoudi, K. / Ketata, K. et al. | 2005
- 419
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Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizationsMerabet, A. et al. | 2005
- 424
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Technology CAD of silicided Schottky barrier MOSFET for elevated source–drain engineeringSaha, A.R. / Chattopadhyay, S. / Bose, C. / Maiti, C.K. et al. | 2005
- 431
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Enhanced silicon band edge related radiation: Origin and applicability for light emittersArguirov, T. / Kittler, M. / Seifert, W. / Yu, X. et al. | 2005
- 435
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Sulphur doped silicon light emitting diodesGalata, S.F. / Lourenço, M.A. / Gwilliam, R.M. / Homewod, K.P. et al. | 2005
- 440
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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantationChow, C.F. / Wong, S.P. / Gao, Y. / Ke, N. / Li, Q. / Cheung, W.Y. / Lourenco, M.A. / Homewood, K.P. et al. | 2005
- 444
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The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in SiChong, Y.T. / Li, Q. / Chow, C.F. / Ke, N. / Cheung, W.Y. / Wong, S.P. / Homewood, K.P. et al. | 2005
- 449
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b-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applicationsOotsuka, T. / Liu, Z. / Osamura, M. / Fukuzawa, Y. / Otogawa, N. / Nakayama, Y. / Tanoue, H. / Makita, Y. et al. | 2005
- 449
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β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applicationsOotsuka, Teruhisa / Liu, Zhengxin / Osamura, Masato / Fukuzawa, Yasuhiro / Otogawa, Naotaka / Nakayama, Yasuhiko / Tanoue, Hisao / Makita, Yunosuke et al. | 2005
- 453
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The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substratesTsang, W.M. / Stolojan, V. / Wong, S.P. / Sealy, B.J. / Silva, S.R.P. et al. | 2005
- 458
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The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structuresNazarov, A.N. / Vovk, J.N. / Osiyuk, I.N. / Tkachenko, A.S. / Tyagulskii, I.P. / Lysenko, V.S. / Gebel, T. / Rebohle, L. / Skorupa, W. / Yankov, R.A. et al. | 2005
- 462
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Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layerFonseca, A. / Alves, E. / Leitão, J.P. / Sobolev, N.A. / Carmo, M.C. / Nikiforov, A.I. et al. | 2005
- 466
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Ge self-assembled islands grown on SiGe/Si(001) relaxed buffer layersShaleev, M.V. / Novikov, A.V. / Kuznetsov, O.A. / Yablonsky, A.N. / Vostokov, N.V. / Drozdov, Yu.N. / Lobanov, D.N. / Krasilnik, Z.F. et al. | 2005
- 470
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Field effect on optical recombination in Si/SiGe quantum heterostructures having U, W and M type II potential designsSfina, N. / Lazzari, J.-L. / Said, M. et al. | 2005
- 475
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Photoluminescent Si nanoparticles embedded in silicon oxide matrixKapaklis, V. / Politis, C. / Poulopoulos, P. / Schweiss, P. et al. | 2005
- 479
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Modelisation of optoelectronic device based on Si/SiO2 emitting red lightAbdi-Ben Nasrallah, S. / Sfina, N. / Bouazra, A. / Said, M. et al. | 2005
- 483
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Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation techniqueAbdi, Y. / Derakhshandeh, J. / Hashemi, P. / Mohajerzadeh, S. / Karbassian, F. / Nayeri, F. / Arzi, E. / Robertson, M.D. / Radamson, H. et al. | 2005
- 488
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Structural properties of Ge-implanted SiO2 layers and related MOS memory effectsDuguay, S. / Slaoui, A. / Grob, J.J. / Kanoun, M. / Burignat, S. / Souifi, A. et al. | 2005
- 494
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Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantationGrisolia, J. / Shalchian, M. / BenAssayag, G. / Coffin, H. / Bonafos, C. / Schamm, S. / Atarodi, S.M. / Claverie, A. et al. | 2005
- 499
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Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applicationsCoffin, H. / Bonafos, C. / Schamm, S. / Carrada, M. / Cherkashin, N. / Ben Assayag, G. / Dimitrakis, P. / Normand, P. / Respaud, M. / Claverie, A. et al. | 2005
- 504
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Silicon nanoparticles in thermally annealed thin silicon monoxide filmsSzekeres, A. / Nikolova, T. / Paneva, A. / Cziraki, A. / Kovacs, Gy. J. / Lisovskyy, I. / Mazunov, D. / Indutnyy, I. / Shepeliavyi, P. et al. | 2005
- 508
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Si nanocrystal-containing SiOx (x<2) produced by thermal annealing of PECVD realized thin filmsBedjaoui, M. / Despax, B. / Caumont, M. / Bonafos, C. et al. | 2005
- 513
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Characterization of program and erase properties using Fowler–Nordheim tunneling in the 30nm silicon–oxide–nitride–oxide–silicon transistorHam, Hochan / Heo, Jinhee / Kim, Chungwoo / Chung, Ilsub et al. | 2005
- 517
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Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodotsTurchanikov, V.I. / Nazarov, A.N. / Lysenko, V.S. / Winkler, O. / Spangenberg, B. / Kurz, H. et al. | 2005
- 521
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author index| 2005
- 524
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subject index| 2005
- CO2
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Inside front cover| 2005