Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells (Englisch)
- Neue Suche nach: Escarré, J.
- Neue Suche nach: Villar, F.
- Neue Suche nach: Asensi, J.M.
- Neue Suche nach: Bertomeu, J.
- Neue Suche nach: Andreu, J.
- Neue Suche nach: Escarré, J.
- Neue Suche nach: Villar, F.
- Neue Suche nach: Asensi, J.M.
- Neue Suche nach: Bertomeu, J.
- Neue Suche nach: Andreu, J.
In:
Journal of Non-Crystalline Solids
;
352
, 9-20
;
1896-1899
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells
-
Beteiligte:Escarré, J. ( Autor:in ) / Villar, F. ( Autor:in ) / Asensi, J.M. ( Autor:in ) / Bertomeu, J. ( Autor:in ) / Andreu, J. ( Autor:in )
-
Erschienen in:Journal of Non-Crystalline Solids ; 352, 9-20 ; 1896-1899
-
Verlag:
- Neue Suche nach: Elsevier B.V.
-
Erscheinungsdatum:01.01.2006
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Format / Umfang:4 pages
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ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 352, Ausgabe 9-20
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- 1352
-
Study of electron field emission from arrays of multi-walled carbon nanotubes synthesized by hot-wire dc plasma-enhanced chemical vapor depositionCojocaru, Costel Sorin / Kim, Dohyung / Pribat, Didier / Bourée, Jean-Eric / Minoux, Eric / Gangloff, Laurent / Legagneux, Pierre et al. | 2006
- 1357
-
Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloysSuendo, V. / Patriarche, G. / Roca i Cabarrocas, P. et al. | 2006
- 1361
-
Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniquesFerreira, I. / Fortunato, E. / Vilarinho, P. / Viana, A.S. / Ramos, A.R. / Alves, E. / Martins, R. et al. | 2006
- 1367
-
Nanocrystalline cubic silicon carbide films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperatureKomura, Y. / Tabata, A. / Narita, T. / Kondo, A. / Mizutani, T. et al. | 2006
- 1371
-
Silicon–carbon films deposited at low substrate temperatureAmbrosone, G. / Coscia, U. / Lettieri, S. / Maddalena, P. / Noce, M. Della / Ferrero, S. / Restello, S. / Rigato, V. / Tucci, M. et al. | 2006
- 1376
-
Structural properties of microcrystalline SiC deposited at low substrate temperatures by HWCVDKlein, S. / Houben, L. / Carius, R. / Finger, F. / Fischer, W. et al. | 2006
- 1380
-
Microstructure analysis of a-SiC:H thin films grown by high-growth-rate PECVDRicciardi, C. / Primiceli, A. / Germani, G. / Rusconi, A. / Giorgis, F. et al. | 2006
- 1384
-
Hydrogenated amorphous silicon–carbon alloys obtained from Ar–SiH4–CH4 gas mixtures: Structural and transport propertiesVignoli, S. / Chaudhuri, P. / Bhaduri, A. / Gupta, N. Dutta / Longeaud, C. et al. | 2006
- 1388
-
Structural, optical and electrical properties of helium diluted a-Si1−xCx:H films deposited by PECVDLoulou, M. / Gharbi, R. / Fathallah, M.A. / Ambrosone, G. / Coscia, U. / Abbate, G. / Marino, A. / Ferrero, S. / Tresso, E. et al. | 2006
- 1392
-
Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVDOliveira, A.R. / Carreño, M.N.P. et al. | 2006
- 1398
-
UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloysXu, Jun / Mei, Jiaxin / Rui, Yunjun / Chen, Deyuan / Cen, Zhanhong / Li, Wei / Ma, Zhongyuan / Xu, Ling / Huang, Xinfan / Chen, Kunji et al. | 2006
- 1402
-
Microstructure characterization of SiCl4-based microcrystalline silicon films by effusion of implanted heliumBeyer, Wolfhard / Carius, Reinhard / Zastrow, Uwe et al. | 2006
- 1406
-
Amorphous hydrogenated silicon–carbon as new antireflective coating for solar cellsStapinski, Tomasz / Swatowska, Barbara et al. | 2006
- 1410
-
Characterization of nanocrystalline silicon carbide filmsZhang, S. / Pereira, L. / Hu, Z. / Ranieiro, L. / Fortonato, E. / Ferreira, I. / Martins, R. et al. | 2006
- 1416
-
Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVDSwain, B.P. / Gundu Rao, T.K. / Dusane, R.O. et al. | 2006
- 1421
-
Hopping current density in amorphous carbon/crystalline silicon heterojunctionsKatsuno, T. / Godet, C. / Loir, A.S. / Garrélie, F. et al. | 2006
- 1425
-
Synthesis, characterization and modelling of silicon based opalsPallavidino, L. / Razo, D. Santamaria / Geobaldo, F. / Balestreri, A. / Bajoni, D. / Galli, M. / Andreani, L.C. / Ricciardi, C. / Celasco, E. / Quaglio, M. et al. | 2006
- 1430
-
A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVDPecora, A. / Maiolo, L. / Fortunato, G. / Caligiore, C. et al. | 2006
- 1434
-
High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealingHan, Sang-Myeon / Shin, Moon-Young / Park, Joong-Hyun / Han, Min-Koo et al. | 2006
- 1438
-
Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical propertiesAlbertin, K.F. / Pereyra, I. et al. | 2006
- 1444
-
UV and ozone influence on the conductivity of ZnO thin filmsGonçalves, G. / Pimentel, A. / Fortunato, E. / Martins, R. / Queiroz, E.L. / Bianchi, R.F. / Faria, R.M. et al. | 2006
- 1448
-
Role of the thickness on the electrical and optical performances of undoped polycrystalline zinc oxide films used as UV detectorsPimentel, A. / Gonçalves, A. / Marques, A. / Martins, R. / Fortunato, E. et al. | 2006
- 1453
-
Optical active centres in ZnO samplesMonteiro, T. / Soares, M.J. / Neves, A. / Pereira, S. / Correia, M.R. / Peres, M. / Alves, E. / Rogers, D. / Teherani, F. / Munoz-SanJose, V. et al. | 2006
- 1457
-
Gas sensitive light emission properties of tin oxide and zinc oxide nanobeltsLettieri, S. / Bismuto, A. / Maddalena, P. / Baratto, C. / Comini, E. / Faglia, G. / Sberveglieri, G. / Zanotti, L. et al. | 2006
- 1461
-
Spray deposited heavy doped indium oxide film as an efficient hole supplier in silicon light-emitting diodesMalik, O. / Grimalsky, V. / De la Hidalga-W, J. et al. | 2006
- 1466
-
Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperatureKurdesau, F. / Khripunov, G. / da Cunha, A.F. / Kaelin, M. / Tiwari, A.N. et al. | 2006
- 1471
-
Electron transport and optical characteristics in amorphous indium zinc oxide filmsMartins, R. / Almeida, P. / Barquinha, P. / Pereira, L. / Pimentel, A. / Ferreira, I. / Fortunato, E. et al. | 2006
- 1475
-
On the electronic transport properties of bismuth oxide thin filmsLeontie, L. / Rusu, G.I. et al. | 2006
- 1479
-
Optical properties of cobalt oxide films by a dipping sol–gel processDrasovean, Romana / Monteiro, Regina / Fortunato, Elvira / Musat, Viorica et al. | 2006
- 1486
-
Optical and magnetic properties of Co-doped TiO2 thin films grown by pulsed laser depositionPopovici, N. / Jimenez, E. / da Silva, R.C. / Branford, W.R. / Cohen, L.F. / Conde, O. et al. | 2006
- 1490
-
AC and DC conductivity analysis of hydroxyapatite and titanium calcium phosphate formed by dry ball millingSilva, C.C. / Graça, M.P.F. / Valente, M.A. / Sombra, A.S.B. et al. | 2006
- 1495
-
Electrical impedance spectroscopy and aging behavior of glasses containing silver oxide and metallic silver nanoparticlesHulpus, A.O. / Monteiro, J.H. / Mendiratta, S.K. / Carrasco, M.F. / Ardelean, I. et al. | 2006
- 1501
-
Study of the electric and dielectric properties of SiO2–Li2O–Nb2O5 sol–gel glass–ceramicsGraça, M.P.F. / da Silva, M.G. Ferreira / Sombra, A.S.B. / Valente, M.A. et al. | 2006
- 1506
-
Self-organization and anisotropy in amorphous chalcogenidesPopescu, M. / Sava, F. / Lőrinczi, A. et al. | 2006
- 1510
-
Atomic structure and bonding properties in amorphous Cux(As2S3)1−x by ab initio molecular-dynamics simulationsAniya, M. / Shimojo, F. et al. | 2006
- 1514
-
An anomalous X-ray scattering study on glassy superionic conductor (As2Se3)0.4(AgI)0.6 using a third-generation synchrotron radiation facilityUsuki, T. / Hosokawa, S. / Bérar, J.-F. et al. | 2006
- 1517
-
Partial structure analysis of glassy As2Se3 using anomalous X-ray scatteringHosokawa, S. / Wang, Y. / Pilgrim, W.-C. / Bérar, J.-F. / Mamedov, S. / Boolchand, P. et al. | 2006
- 1520
-
Nano-scale annealing-induced structural changes in As-rich pulsed laser deposited AsxSe100−x films studied by XPSSiokou, A. / Kalyva, M. / Yannopoulos, S.N. / Němec, P. / Frumar, M. et al. | 2006
- 1525
-
Microstructural characterization and optical properties of ZnSe thin filmsRusu, G.I. / Ciupina, V. / Popa, M.E. / Prodan, G. / Rusu, G.G. / Baban, C. et al. | 2006
- 1529
-
Stimulated structural transformations in Se0.6Te0.4/SiOx nano-layered compositeKokenyesi, S. / Malyovanik, M. / Cheresnya, V. / Shiplyak, M. / Csik, A. et al. | 2006
- 1534
-
Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloysLucovsky, G. / Phillips, J.C. et al. | 2006
- 1539
-
Density of states of a-Se near the valence bandKoughia, K. / Kasap, S.O. et al. | 2006
- 1543
-
Discrete defect levels in the amorphous selenium bandgapBenkhedir, M.L. / Brinza, M. / Qamhieh, N. / Adriaenssens, G.J. et al. | 2006
- 1547
-
Amorphous arsenic chalcogenide films modified using rare-earth complexesKozyukhin, S.A. / Voronkov, E.N. / Kuz’mina, N.P. et al. | 2006
- 1551
-
Differential scanning calorimetric studies on As–Te–Si glasses: Network topological effects and the composition dependence of thermal parametersAnbarasu, M. / Asokan, S. et al. | 2006
- 1555
-
Synthesis and physical properties of Si(Ge)–Se–Te glassesKulakova, L.A. / Kudoyarova, V.Kh. / Melekh, B.T. / Bakharev, V.I. et al. | 2006
- 1560
-
Correlation between bismuth concentration and distribution of relaxators in As2Se3(Bi)x layersCastro, R.A. / Bordovsky, G.A. / Bordovsky, V.A. / Anisimova, N.I. et al. | 2006
- 1563
-
Spin-coated As33S67−xSex thin films: the effect of annealing on structure and optical propertiesKohoutek, T. / Wagner, T. / Vlcek, Mir. / Vlcek, Mil. / Frumar, M. et al. | 2006
- 1567
-
Optical and electronic properties of Ge–Sb–Te filmsLi, H. / Ju, T. / Taylor, P.C. et al. | 2006
- 1570
-
Correlation between low frequency vibrational excitations and glass transition dynamics in amorphous semiconductors Ge1−xSxOgura, Hideki / Matsuishi, Kiyoto / Onari, Seinosuke et al. | 2006
- 1574
-
1/f Conductance noise in stabilized amorphous seleniumMajid, Shaikh Hasibul / Johanson, Robert E. et al. | 2006
- 1578
-
Percolation breakdown of amorphous semiconductorsVoronkov, E.N. / Popov, A.I. / Savinov, I.S. / Fairushin, A.R. et al. | 2006
- 1582
-
In situ simultaneous measurements of photodarkening and photoinduced volume changes in chalcogenide glassesIkeda, Y. / Shimakawa, K. et al. | 2006
- 1587
-
Universal feature of photo-induced volume changes in chalcogenide glassesHegedüs, J. / Kohary, K. / Kugler, S. et al. | 2006
- 1591
-
Effect of pressure on photo-induced interdiffusion in amorphous chalcogenide nanomultilayersIvan, I. / Erdélyi, G. / Kokenyesi, S. / Beke, D.L. et al. | 2006
- 1595
-
The effect of temperature on photoinduced metastability in avalanche a-Se layersReznik, A. / Lui, B.J.M. / Lyubin, V. / Klebanov, M. / Ohkawa, Y. / Matsubara, T. / Miyakawa, K. / Kubota, M. / Tanioka, K. / Kawai, T. et al. | 2006
- 1599
-
Photoluminescence, photostructural transformations and photoinduced anisotropy in rare-earth-doped chalcogenide glassy filmsLyubin, V. / Klebanov, M. / Sfez, B. / Veinger, M. / Dror, R. / Lyubina, I. et al. | 2006
- 1602
-
Raman spectroscopy of cobalt ferrite nanocomposite in silica matrix prepared by sol–gel methodda Silva, S.W. / Pedroza, R.C. / Sartoratto, P.P.C. / Rezende, D.R. / da Silva Neto, A.V. / Soler, M.A.G. / Morais, P.C. et al. | 2006
- 1607
-
New evidence of light-induced structural changes detected in As–S glasses by photon energy dependent Raman spectroscopyHolomb, R. / Mateleshko, N. / Mitsa, V. / Johansson, P. / Matic, A. / Veres, M. et al. | 2006
- 1612
-
Why DVDs work the way they do: The nanometer-scale mechanism of phase change in Ge–Sb–Te alloysKolobov, Alexander V. / Fons, Paul / Tominaga, Junji / Uruga, T. et al. | 2006
- 1616
-
Reduction of the dark current in stabilized a-Se based X-ray detectorsBelev, G. / Kasap, S.O. et al. | 2006
- 1621
-
EXAFS study of amorphous Ge2Sb2Te5Baker, D.A. / Paesler, M.A. / Lucovsky, G. / Taylor, P.C. et al. | 2006
- 1624
-
Simulation of phase-change processes in non-volatile memory cellsPopov, A.I. / Savinov, I.S. / Voronkov, E.N. et al. | 2006
- 1628
-
Blue emitting thin-film electroluminescent devices utilizing Tm-doped ZnS nanocrystalsAdachi, D. / Haze, H. / Shirahase, H. / Toyama, T. / Okamoto, H. et al. | 2006
- 1632
-
New micro-optical devices for the IR based on three-component amorphous chalcogenide photoresistsEisenberg, N.P. / Manevich, M. / Arsh, A. / Klebanov, M. / Lyubin, V. et al. | 2006
- 1637
-
Selective wet-etching of undoped and silver photodoped amorphous thin films of chalcogenide glasses in inorganic alkaline solutionsOrava, J. / Wagner, T. / Krbal, M. / Kohoutek, T. / Vlcek, Mil. / Frumar, M. et al. | 2006
- 1641
-
Experimental observation of the density of localized trapping levels in organic semiconductorsSedghi, N. / Donaghy, D. / Raja, M. / Badriya, S. / Higgins, S.J. / Eccleston, W. et al. | 2006
- 1644
-
On the concentration and field dependences of the hopping mobility in disordered organic solidsBaranovskii, S.D. / Rubel, O. / Thomas, P. et al. | 2006
- 1648
-
The dynamics of ohmic contact formation in hydrazone doped polymersGoldie, D.M. et al. | 2006
- 1652
-
Effect of field cycling on the ac and dc properties of Alq3 deviceSilva, V.M. / Mendiratta, S.K. / Pereira, L. et al. | 2006
- 1656
-
Optical absorption by defect states in organic solar cellsGoris, L. / Poruba, A. / Purkrt, A. / Vandewal, K. / Swinnen, A. / Haeldermans, I. / Haenen, K. / Manca, J.V. / Vaněček, M. et al. | 2006
- 1660
-
Optical properties of amorphous polyazomethine thin filmsJarzabek, B. / Weszka, J. / Domanski, M. / Jurusik, J. / Cisowski, J. et al. | 2006
- 1663
-
Low level optical absorption measurements on organic semiconductorsStella, M. / Voz, C. / Puigdollers, J. / Rojas, F. / Fonrodona, M. / Escarré, J. / Asensi, J.M. / Bertomeu, J. / Andreu, J. et al. | 2006
- 1668
-
Absorption spectra of organic semiconductors in IR-range measured by constant photocurrent methodFenukhin, A.V. / Kazanskii, A.G. / Kolosko, A.G. / Terukov, E.I. / Ziminov, A.V. et al. | 2006
- 1671
-
Photo-carrier transport in disordered organic TPD filmsShimakawa, K. / Murata, K. / Matsumoto, S. / Naito, H. et al. | 2006
- 1675
-
Constant photocurrent method and time-of-flight measurements applied to polymer blendsWillekens, J. / Brinza, M. / Aernouts, T. / Poortmans, J. / Adriaenssens, G.J. et al. | 2006
- 1679
-
UV created weak and dangling bonds in aryl-substituted polysilylenesSchauer, F. / Kuřitka, I. / Sáha, P. / Nešpůrek, S. / Lipson, S. et al. | 2006
- 1683
-
Study of strong coupling between surface plasmon and exciton in an organic semiconductorBonnand, Clément / Bellessa, Joel / Plénet, Jean-Claude et al. | 2006
- 1686
-
Effect of ion concentration of ionomer in electron injection layer of polymer light-emitting devicesOlivati, C.A. / Carvalho, A.J.F. / Balogh, D.T. / von Seggern, H. / Faria, R.M. et al. | 2006
- 1691
-
Modelling the effect of non-planarity on luminescence energy of conjugated polymersCorreia, Helena M.G. / Barbosa, Hélder M.C. / Ramos, Marta M.D. et al. | 2006
- 1695
-
Monitoring of the initial degradation of oxadiazole based blue OLED’sNeitzert, H.C. / Ferrara, M. / Rubino, A. / Concilio, S. / Iannelli, P. / Vacca, P. / Ferrara, L. / Minarini, C. et al. | 2006
- 1700
-
Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistorsFlewitt, A.J. / Lin, S. / Milne, W.I. / Wehrspohn, R.B. / Powell, M.J. et al. | 2006
- 1704
-
Fabrication of amorphous silicon thin-film transistor by micro imprint lithographyChoo, Byoung-Kwon / Choi, Jung-Su / Kim, Se-Whan / Park, Kyu-Chang / Jang, Jin et al. | 2006
- 1708
-
Effect of channel length on the threshold voltage degradation of hydrogenated amorphous silicon TFTs due to the drain bias stressShin, Kwang-Sub / Lee, Jae-Hoon / Han, Sang-Myeon / Song, In-Hyuk / Han, Min-Koo et al. | 2006
- 1711
-
Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)Lucovsky, G. / Phillips, J.C. et al. | 2006
- 1715
-
A new instability phenomenon in microcrystalline silicon thin film transistorsLi, Juan / Wu, Chunya / Liu, Jianpin / Zhao, Shuyun / Meng, Zhiguo / Xiong, Shaozhen / Zhang, Lizhu et al. | 2006
- 1719
-
Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diodeLee, Jae-Hoon / Nam, Woo-Jin / Shin, Kwang-Sub / Han, Min-Koo et al. | 2006
- 1723
-
Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistorsCuscunà, M. / Stracci, G. / Bonfiglietti, A. / di Gaspare, A. / Maiolo, L. / Pecora, A. / Mariucci, L. / Fortunato, G. et al. | 2006
- 1728
-
Improved microcrystalline silicon TFTsKandoussi, K. / Gaillard, A. / Simon, C. / Coulon, N. / Pier, T. / Mohammed-Brahim, T. et al. | 2006
- 1732
-
High hole and electron mobilities in nanocrystalline silicon thin-film transistorsLee, Czang-Ho / Sazonov, Andrei / Nathan, Arokia et al. | 2006
- 1737
-
Impedance study of the electrical properties of poly-Si thin film transistorsPereira, L. / Raniero, L. / Barquinha, P. / Fortunato, E. / Martins, R. et al. | 2006
- 1741
-
Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass displayWu, Chunya / Meng, Zhiguo / Xiong, Shaozhen / Wong, Man / Kwok, Hoi Sing et al. | 2006
- 1745
-
Dynamic characteristics of MICC polycrystalline thin film transistorsSon, Yong-Duck / Yang, Kyung-Dong / Bae, Byung-Seong / Park, Kyu-Chang / Jang, Jin et al. | 2006
- 1749
-
Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxideBarquinha, P. / Pimentel, A. / Marques, A. / Pereira, L. / Martins, R. / Fortunato, E. et al. | 2006
- 1753
-
Zinc tin oxide transistors on flexible substratesJackson, W.B. / Herman, G.S. / Hoffman, R.L. / Taussig, C. / Braymen, S. / Jeffery, F. / Hauschildt, J. et al. | 2006
- 1756
-
Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxideBarquinha, P. / Pimentel, A. / Marques, A. / Pereira, L. / Martins, R. / Fortunato, E. et al. | 2006
- 1761
-
The effect of water related traps on the reliability of organic based transistorsGomes, H.L. / Stallinga, P. / Cölle, M. / Biscarini, F. / de Leeuw, D.M. et al. | 2006
- 1765
-
Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layerDe Angelis, F. / Mariucci, L. / Cipolloni, S. / Fortunato, G. et al. | 2006
- 1769
-
Submillimeter radius bendable organic field-effect transistorsSekitani, Tsuyoshi / Iba, Shingo / Kato, Yusaku / Noguchi, Yoshiaki / Sakurai, Takayasu / Someya, Takao et al. | 2006
- 1774
-
Environmental stability and electronic transport of pentacene thin film transistorsKnipp, D. / Muck, T. / Benor, A. / Wagner, V. et al. | 2006
- 1778
-
Copper phthalocyanine thin-film transistors with polymeric gate dielectricPuigdollers, J. / Voz, C. / Fonrodona, M. / Cheylan, S. / Stella, M. / Andreu, J. / Vetter, M. / Alcubilla, R. et al. | 2006
- 1783
-
Thin phase selective transparent detector for length measurementsBunte, E. / Jun, K.H. / Stiebig, H. et al. | 2006
- 1787
-
Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensorsÁguas, H. / Pereira, L. / Raniero, L. / Costa, D. / Fortunato, E. / Martins, R. et al. | 2006
- 1792
-
Amorphous silicon position sensitive detectors applied to micropositioningContreras, J. / Baptista, C. / Ferreira, I. / Costa, D. / Pereira, S. / Águas, H. / Fortunato, E. / Martins, R. / Wierzbicki, R. / Heerlein, H. et al. | 2006
- 1797
-
Radiation hardness of amorphous silicon particle sensorsWyrsch, N. / Miazza, C. / Dunand, S. / Ballif, C. / Shah, A. / Despeisse, M. / Moraes, D. / Powolny, F. / Jarron, P. et al. | 2006
- 1801
-
The laser scanned photodiode: Theoretical and electrical models of the image sensorFernandes, M. / Vieira, M. / Martins, R. et al. | 2006
- 1805
-
a-SiC:H/a-Si:H tandem structure analysis for RGB color recognition in LSP devicesFantoni, A. / Fernandes, M. / Louro, P. / Vieira, M. et al. | 2006
- 1809
-
Light filtering in a-SIC:H multilayers stacked devices using the LSP techniqueVieira, M. / Fantoni, A. / Louro, P. / Fernandes, M. / Lavareda, G. / Carvalho, C.N. et al. | 2006
- 1813
-
Spice model for a laser scanned photodiode tricolor image sensorMartins, J. / Fernandes, M. / Fantoni, A. / Vieira, M. et al. | 2006
- 1818
-
Innovative window layer for amorphous silicon/amorphous silicon carbide UV sensorCaputo, D. / de Cesare, G. / Nascetti, A. / Tucci, M. et al. | 2006
- 1822
-
Thermally actuated a-SiC:H MEMS fabricated by a PECVD processRehder, G. / Carreño, M.N.P. et al. | 2006
- 1829
-
Noise characterization of a-Si:H pin diodesJankovec, Marko / Stiebig, Helmut / Smole, Franc / Topič, Marko et al. | 2006
- 1832
-
Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscopeDespeisse, M. / Saramad, S. / Ballif, C. / Dunand, S. / Jarron, P. / Morse, J. / Snigireva, I. / Miazza, C. / Moraes, D. / Anelli, G. et al. | 2006
- 1837
-
Low leakage current a-Si:H/a-SiC:H n–i–p photodiode with Cr/a-SiNx front contactVygranenko, Yu. / Louro, P. / Vieira, M. / Chang, J.H. / Nathan, A. et al. | 2006
- 1841
-
Nanostructure in the p-layer and its impacts on amorphous silicon solar cellsLiao, Xianbo / Du, Wenhui / Yang, Xiesen / Povolny, Henry / Xiang, Xianbi / Deng, Xunming / Sun, Kai et al. | 2006
- 1847
-
Fabrication of a n–p–p tunnel junction for a protocrystalline silicon multilayer/amorphous silicon tandem solar cellKwak, Joonghwan / Kwon, Seong Won / Lim, Koeng Su et al. | 2006
- 1851
-
Proton-induced degradation of thin-film microcrystalline silicon solar cellsMeillaud, F. / Vallat-Sauvain, E. / Niquille, X. / Dubey, M. / Shah, A. / Ballif, C. et al. | 2006
- 1855
-
Microcrystalline single and double junction silicon based solar cells entirely prepared by HWCVD on textured zinc oxide substrateKumar, P. / Kupich, M. / Bock, W. / Dusane, R.O. / Schroeder, B. et al. | 2006
- 1859
-
Improvement of open circuit voltage in microcrystalline silicon solar cells using hot wire buffer layersMai, Y. / Klein, S. / Carius, R. / Stiebig, H. / Houben, L. / Geng, X. / Finger, F. et al. | 2006
- 1863
-
Influence of front electrode and back reflector electrode on the performances of microcrystalline silicon solar cellsZhang, X.D. / Zhao, Y. / Gao, Y.T. / Zhu, F. / Wei, C.C. / Chen, X.L. / Sun, J. / Hou, G.F. / Geng, X.H. / Xiong, S.Z. et al. | 2006
- 1868
-
Influence on cell performance of bulk defect density in microcrystalline silicon grown by VHF PECVDGordijn, A. / Hodakova, L. / Rath, J.K. / Schropp, R.E.I. et al. | 2006
- 1872
-
Thin p++ μc-Si layers for use as back surface field in p-type silicon heterojunction solar cellsGoldbach, H.D. / Bink, A. / Schropp, R.E.I. et al. | 2006
- 1876
-
Sensitivity of the dark spectral response of thin film silicon based tandem solar cells on the defective regions in the intrinsic layersRubinelli, F.A. / Stolk, R.L. / Sturiale, A. / Rath, J.K. / Schropp, R.E.I. et al. | 2006
- 1880
-
Study of nanostructured/amorphous silicon solar cell by impedance spectroscopy techniqueRaniero, L. / Fortunato, E. / Ferreira, I. / Martins, R. et al. | 2006
- 1884
-
Band-edge electroluminescence from amorphous/crystalline silicon heterostructure solar cellsFuhs, W. / Laades, A. / Maydell, K.v. / Stangl, R. / Gusev, O.B. / Terukov, E.I. / Kazitsyna-Baranovski, S. / Weiser, G. et al. | 2006
- 1888
-
Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafersBrüggemann, R. / Reynolds, S. et al. | 2006
- 1892
-
Advanced optical design of tandem micromorph silicon solar cellsKrc, Janez / Smole, Franc / Topic, Marko et al. | 2006
- 1896
-
Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cellsEscarré, J. / Villar, F. / Asensi, J.M. / Bertomeu, J. / Andreu, J. et al. | 2006
- 1900
-
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cellsHu, Zhihua / Liao, Xianbo / Diao, Hongwei / Cai, Yi / Zhang, Shibin / Fortunato, Elvira / Martins, Rodrigo et al. | 2006
- 1904
-
Light-induced changes in diphasic nanocrystalline silicon films and solar cellsHao, Huiying / Liao, Xianbo / Zeng, Xiangbo / Diao, Hongwei / Xu, Ying / Kong, Guanglin et al. | 2006
- 1909
-
Light induced degradation of microcrystalline silicon solar cellsWang, Yan / Han, Xiaoyan / Zhu, Feng / Hou, Guofu / Ren, Huizhi / Zhang, Kunde / Xue, Junming / Sun, Jian / Zhao, Ying / Geng, Xinhua et al. | 2006
- 1913
-
Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition ratesGueunier-Farret, M.E. / Bazin, C. / Kleider, J.P. / Longeaud, C. / Bulkin, P. / Daineka, D. / Dao, T.H. / Roca i Cabarrocas, P. / Descamps, P. / Kervyn de Meerendre, T. et al. | 2006
- 1917
-
Progress in amorphous and nanocrystalline silicon solar cellsGuha, Subhendu / Yang, Jeffrey et al. | 2006