High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers (Englisch)
- Neue Suche nach: Saint-Cast, Pierre
- Neue Suche nach: Kania, Daniel
- Neue Suche nach: Heller, René
- Neue Suche nach: Kuehnhold, Saskia
- Neue Suche nach: Hofmann, Marc
- Neue Suche nach: Rentsch, Jochen
- Neue Suche nach: Preu, Ralf
- Neue Suche nach: Saint-Cast, Pierre
- Neue Suche nach: Kania, Daniel
- Neue Suche nach: Heller, René
- Neue Suche nach: Kuehnhold, Saskia
- Neue Suche nach: Hofmann, Marc
- Neue Suche nach: Rentsch, Jochen
- Neue Suche nach: Preu, Ralf
In:
Applied Surface Science
;
258
, 21
;
8371-8376
;
2012
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers
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Beteiligte:Saint-Cast, Pierre ( Autor:in ) / Kania, Daniel ( Autor:in ) / Heller, René ( Autor:in ) / Kuehnhold, Saskia ( Autor:in ) / Hofmann, Marc ( Autor:in ) / Rentsch, Jochen ( Autor:in ) / Preu, Ralf ( Autor:in )
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Erschienen in:Applied Surface Science ; 258, 21 ; 8371-8376
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2012
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Format / Umfang:6 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 258, Ausgabe 21
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