X-ray topographic observation of subsurface line defects in GaAs on Si substrate (Englisch)
Nationallizenz
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Shiba, Y.
- Neue Suche nach: Fujita, K.
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Shiba, Y.
- Neue Suche nach: Fujita, K.
In:
Journal of Crystal Growth
;
103
, 1-4
;
357-362
;
1990
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:X-ray topographic observation of subsurface line defects in GaAs on Si substrate
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Beteiligte:
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Erschienen in:Journal of Crystal Growth ; 103, 1-4 ; 357-362
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Verlag:
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Erscheinungsdatum:01.01.1990
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 103, Ausgabe 1-4
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- 1
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Characterization of semiconductors by photoluminescence mapping at room temperatureTajima, Michio et al. | 1990
- 8
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Two-dimensional image detection of luminescence and transport properties of GaAsMori, Y. / Nakamura, M. / Sakachi, Y. / Ohkura, H. et al. | 1990
- 14
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Application of picosecond time resolved photoluminescence mapping for the characterization of semi-insulating GaAs WafersKatsumata, Tooru / Imagawa, Hiroshi / Watanabe, Motoyuki / Zuzuki, Hitoshi / Koishi, Musubu et al. | 1990
- 21
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A spatially resolved spectrally resolved photoluminescence mapping systemMoore, C.J.L. / Miner, C.J. et al. | 1990
- 28
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Surface characterization of semi-insulating GaAs wafers by room temperature photoluminescence mappingToba, Ryuichi / Tajima, Michio et al. | 1990
- 38
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Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environmentWang, Z.G. / Li, C.J. / Wan, S.K. / Lin, L.Y. et al. | 1990
- 46
-
Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC methodWeyher, J.L. / Frigeri, C. / Van der Wel, P.J. et al. | 1990
- 54
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Raman microprobe analysis of GaAs wafersJimenez, J. / González, M.A. / Martín, B. / Calvo, B. et al. | 1990
- 61
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A study on defects in a ZnSxSe1−x crystal by Raman scattering tomographySakai, Kazufumi / Sawahata, Kouichi / Ogawa, Tomoya et al. | 1990
- 65
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Cathodoluminescence imaging of semiconducting diamond formed by plasma CVDYokota, Yoshihiro / Kawarada, Hiroshi / Ma, Jing Sheng / Nishimura, Kazuhito / Hiraki, Akio et al. | 1990
- 71
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Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomographyFillard, J.P. et al. | 1990
- 78
-
A quantitative light scattering tomography technique for measuring microprecipitate concentrations in GaAs and InPFawcett, T.J. / Brozel, M.R. et al. | 1990
- 85
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Investigation of changes of As precipitates in semi-insulating GaAs crystals at several temperatures by infrared light scattering tomographyOtoki, Yoohei / Watanabe, Masatoshi / Inada, Tomoki / Kuma, Shoji et al. | 1990
- 91
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Origin of microscopic inhomogeneities in bulk gallium arsenideMolva, E. / Bunod, Ph. / Chabli, A. / Lombardot, A. / Dubois, S. / Bertin, F. et al. | 1990
- 102
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A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAsClark, S. / Brozel, M.R. / Stirland, D.J. et al. | 1990
- 109
-
High resolution and sensitivity infrared tomographyFillard, J.P. / Montgomery, P.C. / Gall, P. / Castagné, M. / Bonnafé, J. et al. | 1990
- 116
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A three-dimensional study of dislocation lines in an in-doped GaAs crystal by layer-by-layer tomographyTodoroki, Syuji / Sakai, Kazufumi / Ogawa, Tomoya et al. | 1990
- 120
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Submicron optical sectioning microscopy: A particular inverse problem solution adapted to epilayer defect analysisFillard, J.P. / Montgomery, P.C. / Gall, P. / Bonnafé, J. / Castagné, M. et al. | 1990
- 126
-
Application of elastic IR light scattering for investigation of large-scale electrically active defects in semiconductorsVoronkov, V.V. / Zabolotskiy, S.E. / Kalinushkin, V.P. / Murin, D.I. / Ploppa, M.G. / Yuryev, V.A. et al. | 1990
- 131
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Synchrotron X-ray topographic studies on minute strain fields in as-grown silicon single crystalsIshikawa, Tetsuya et al. | 1990
- 141
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Synchrotron X-radiation plane-wave topography for imaging microdefects in thinned silicon crystalsChikaura, Yoshinori / Imai, Masato / Suzuki, Yoshifumi / Yatsurugi, Yoshifumi et al. | 1990
- 150
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SiO2/Si interface study with synchroton radiation X-ray diffractionHirosawa, Ichiro / Akimoto, Koichi / Tatsumi, Toru / Mizuki, Jun'ichiro / Matsui, Junji et al. | 1990
- 156
-
Microstructure and lattice distortion of anodized porous silicon layersSugiyama, Hiroshi / Nittono, Osamu et al. | 1990
- 164
-
Observation of microscopic impurity distributions in InP using ion microscopeHomma, Yoshikazu / Tomita, Masato / Kurosawa, Satoru / Tohno, Shun-ichi et al. | 1990
- 170
-
Remote contact LBIC imaging of defects in semiconductorsBajaj, J. / Tennant, W.E. et al. | 1990
- 179
-
High-sensitivity surface characterization with injected carriers by lasers beam using focused reflectance microwave probe methodUsami, Akira / Yamada, Noboru / Matsuki, Kazunori / Takeuchi, Tsutomu / Wada, Takao et al. | 1990
- 188
-
Formation of surface inversion layer in F+-implanted n-type siliconChu, C.H. / Chen, L.J. / Hwang, H.L. et al. | 1990
- 197
-
Microtomography of semiconductor crystals in the EBIC modeBondarenko, I.E. / Likharev, S.K. / Rau, E.I. / Yakimov, E.B. et al. | 1990
- 200
-
Thermal wave imaging of misfit dislocations and correlation with minority carrier lifetimeBivas, A. / Lee Smith, W. / Kola, R.R. / Radzimski, Z.J. / Rozgonyi, G.A. et al. | 1990
- 206
-
Studies of metal-induced surface defects in czochralski Si following rapid thermal processing with thermal wave methodHahn, S. / Smith, W.L. / Suga, H. / Meinecke, R. / Kola, R.R. / Rozgonyi, G.A. et al. | 1990
- 217
-
The mechanism of modulated optical reflectance imaging of dislocations in siliconBailey, Jeff / Weber, Eicke R. / Opsal, Jon et al. | 1990
- 226
-
Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphideFavennec, P.N. / L'Haridon, H. / Coquillé, R. / Salvi, M. / Gauneau, M. / Roizes, A. / David, J.P. / Krawczyk, S.K. / Longères, J.Y. et al. | 1990
- 234
-
Mapping evaluation of damage effect on electrical properties of GaAs Schottky contactsShiojima, Kenji / Okumura, Tsugunori et al. | 1990
- 243
-
Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman techniqueChen, T.P. / Guo, Y.D. / Huang, T.S. / Chen, L.J. et al. | 1990
- 251
-
Characterization of growth cells in In-doped GaP crystals by birefringent methodHsu, J.T. / Huang, T.S. et al. | 1990
- 257
-
Round-robin test of EPD measurement on undoped GaAs wafersIwasaki, W. / Imai, M. / Nakamura, A. et al. | 1990
- 268
-
Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAsFrigeri, C. / Weyher, J.L. et al. | 1990
- 275
-
The distribution of the deep donor EL2 and the net acceptor concentration in semi-insulating GaAsWinnacker, A. / Zach, F.X. et al. | 1990
- 282
-
Investigation of neutron radiation defects in silicon by high discriminability deep level transient spectroscopy (HDDLTS)Fengmei, Wu / Yi, Shi / Changhe, Wang et al. | 1990
- 287
-
Scanning deep level transient spectroscopy (SDLTS) investigations of deep level spatial distribution in implanted siliconKononchuk, O.V. / Yakimov, E.B. et al. | 1990
- 291
-
Low temperature electrical mapping of ion implanted fet layers: Sidegating effect and transport propertiesRoizes, A. / David, J.P. et al. | 1990
- 297
-
Spatial distributions of induced traps in silicon by rapid thermal processingTokuda, Y. / Kobayashi, N. / Usami, A. / Inoue, Y. / Imura, M. et al. | 1990
- 303
-
Reverse contrast imaging in GaAsMohades-Kassai, A. / Brozel, M.R. et al. | 1990
- 311
-
Distinguishing between EL2 and dislocation formation mechanisms in GaAs by mapping topographiesWang, Faa-Ching / Rau, Mann-Fu / Kurz, Jimmy / Liao, De-Dui / Carter, Ronald et al. | 1990
- 323
-
Characterization and mapping of semi-insulating GaAs crystals grown by vertical zone melting and by vertical zone refiningTang, R.-S. / Sargent, L. / Blakemore, J.S. / Swiggard, E.M. et al. | 1990
- 330
-
DLTS and photoluminescence on wafer mapping analyses for AlGaAs/GaAs heterojunction bipolar transistorsWatanabe, Kazuo / Wada, Kazumi et al. | 1990
- 335
-
High resolution X-ray diffraction studies of semiconductor superlatticesBarnett, S.J. et al. | 1990
- 344
-
X-ray scattering radiography and orientation topography for characterization of semiconductor crystalsChikaura, Yoshinori / Kii, Hideki / Suzuki, Yoshifumi et al. | 1990
- 350
-
Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafersUsami, Akira / Ito, Akira / Tokuda, Yutaka / Kano, Hiroyuki / Wada, Takao et al. | 1990
- 357
-
X-ray topographic observation of subsurface line defects in GaAs on Si substrateYamamoto, T. / Shiba, Y. / Fujita, K. et al. | 1990
- 363
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Anti-phase boundaries of GaAs on SiItoh, Yoshio / Mori, Hidefumi / Yamaguchi, Masafumi et al. | 1990
- 367
-
Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAsZhu, Q.S. / Hiramatsu, K. / Tanaka, S. / Akasaki, I. et al. | 1990
- 371
-
Influence of In content on defects of LPE GaAs epilayersYang, B.H. / Wang, Z.G. / He, H.J. / Lin, L.Y. et al. | 1990
- 380
-
Defects in (100)CdTe epilayers grown on (100)GaAs by MOCVDPeng, Rui-wu / Ding, Yong-qing / Wang, Ge-ya / Peng, Chen et al. | 1990
- 389
-
Compensation of non-uniform illumination and background variations using recursive least squares algorithmChung, Jack C.H. / Leininger, Gary G. et al. | 1990
- 398
-
A classification scheme for visual defects arising in semiconductor wafer inspectionRavishankar Rao, A. / Jain, Ramesh et al. | 1990
- 407
-
Mathematical morphology applied to integrated circuit inspectionVitrià, Jordi / Villanueva, Juan Jose et al. | 1990
- 413
-
Models and algorithms of image processing of local SEM diagnosticsUshakov, N.G. et al. | 1990
- 420
-
“Makyoh”: The 2000 year old technology still aliveKugimiya, K. et al. | 1990
- 423
-
Characterization of mirror-like wafer surfaces using the magic mirror methodHahn, S. / Kugimiya, K. / Yamashita, M. / Blaustein, P.R. / Takahashi, K. et al. | 1990
- 433
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Modern technique for the production and measurement of Makyoh imagesHibino, K. / Yamauchi, M. / Katoh, M. / Matsuda, K. et al. | 1990
- 437
-
Characterization of mirror-polished silicon wafers by Makyoh methodTokura, Seitaro / Fujino, Nobukatsu / Ninomiya, Masaharu / Masuda, Kenji et al. | 1990
- 443
-
Time-dependent dielectric breakbown evaluation for rapid-thermally grown SiO2 films formed on submicron-grooved Si surfacesArakawa, T. / Fukuda, H. / Okabe, Y. / Ohno, S. et al. | 1990
- 443
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Time-dependent dielectric breakdown evaluation for rapid-thermally grown SiO2 films formed on submicron-grooved Si surfacesArakawa, T. / Fukuda, H. / Okabe, Y. / Ohno, S. et al. | 1990
- 448
-
Surface defects in GaAs wafer processesMatsushita, H. / Ishida, M. / Kikawa, J. et al. | 1990
- 456
-
Evaluation of directly bonded silicon wafer interface by the magic mirror methodOkabayashi, Osamu / Shirotori, Haruo / Sakurazawa, Hiroyuki / Kanda, Eizaburo / Yokoyama, Takeshi / Kawashima, Mitsuo et al. | 1990
- 461
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Characterization of polished surfaces by “Makyoh”Kugimiya, K. et al. | 1990
- 469
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Author index| 1990
- 473
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Subject index| 1990
- ii
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Editorial Board| 1990
- vii
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PrefaceOgawa, Tomoya et al. | 1990