Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si (Englisch)
- Neue Suche nach: Chouprik, A.
- Weitere Informationen zu Chouprik, A.:
- https://orcid.org/0000-0003-3672-4791
- Neue Suche nach: Chernikova, A.
- Neue Suche nach: Markeev, A.
- Neue Suche nach: Mikheev, V.
- Neue Suche nach: Negrov, D.
- Neue Suche nach: Spiridonov, M.
- Neue Suche nach: Zarubin, S.
- Neue Suche nach: Zenkevich, A.
- Neue Suche nach: Chouprik, A.
- Weitere Informationen zu Chouprik, A.:
- https://orcid.org/0000-0003-3672-4791
- Neue Suche nach: Chernikova, A.
- Neue Suche nach: Markeev, A.
- Neue Suche nach: Mikheev, V.
- Neue Suche nach: Negrov, D.
- Neue Suche nach: Spiridonov, M.
- Neue Suche nach: Zarubin, S.
- Neue Suche nach: Zenkevich, A.
In:
Microelectronic Engineering
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178
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250-253
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2017
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
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Beteiligte:Chouprik, A. ( Autor:in ) / Chernikova, A. ( Autor:in ) / Markeev, A. ( Autor:in ) / Mikheev, V. ( Autor:in ) / Negrov, D. ( Autor:in ) / Spiridonov, M. ( Autor:in ) / Zarubin, S. ( Autor:in ) / Zenkevich, A. ( Autor:in )
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Erschienen in:Microelectronic Engineering ; 178 ; 250-253
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:11.05.2017
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 178
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 34
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Single-trap analysis of hot-carrier-induced gate oxide degradation in Flash memory cellsTkachev, Yuri / Kotov, Alexander et al. | 2017
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RRAM serial configuration for the generation of random bitsArumí, D. / Gonzalez, M.B. / Campabadal, F. et al. | 2017
- 80
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Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysisOhta, Akio / Murakami, Hideki / Ikeda, Mitsuhisa / Makihara, Katsunori / Ikenaga, Eiji / Miyazaki, Seiichi et al. | 2017
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Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopyOhta, Akio / Ikeda, Mitsuhisa / Makihara, Katsunori / Miyazaki, Seiichi et al. | 2017
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Modeling of uniform switching RRAM devices and impact of critical defectsSubhechha, S. / Degraeve, R. / Roussel, P. / Goux, L. / Clima, S. / De Meyer, K. / Van Houdt, J. / Kar, G.S. et al. | 2017
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Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devicesMehonic, A. / Munde, M.S. / Ng, W.H. / Buckwell, M. / Montesi, L. / Bosman, M. / Shluger, A.L. / Kenyon, A.J. et al. | 2017
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Determination of trap density in hafnia films produced by two atomic layer deposition techniquesIslamov, D.R. / Gritsenko, V.A. / Lebedev, M.S. et al. | 2017
- 108
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Band offsets and metal contacts in monolayer black phosphorusGuo, Yuzheng / Robertson, John et al. | 2017
- 112
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Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?Stesmans, A. / Afanas'ev, V.V. et al. | 2017
- 116
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Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacksMroczyński, Robert / Kwietniewski, Norbert / Konarski, Piotr et al. | 2017
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Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memoryCelano, Umberto / Gastaldi, Carlotta / Govoreanu, Bogdan / Richard, Olivier / Bender, Hugo / Goux, Ludovic / Kar, Gouri Sankar / Vandervorst, Wilfried et al. | 2017
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Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer depositionCheng, C.K. / Young, L.B. / Lin, K.Y. / Lin, Y.H. / Wan, H.W. / Lu, G.J. / Chang, M.T. / Cai, R.F. / Lo, S.C. / Li, M.Y. et al. | 2017
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Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effectNifa, Iliass / Leroux, Charles / Torres, Alphonse / Charles, Matthew / Blachier, Denis / Reimbold, Gilles / Ghibaudo, Gérard / Bano, Edwige et al. | 2017
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Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layersKe, M. / Takenaka, M. / Takagi, S. et al. | 2017
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Improved leakage current and device uniformity for sub-20nm N-FinFETs by cryogenic Ge pre-amorphization implant in contactChou, Chuan-Pu / Chen, Chin-Yu / Chen, Kuen-Yi / Teng, Shih-Chieh / Wu, Yung-Hsien et al. | 2017
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Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1−xSnx, SiyGe1−x−ySnx) with Al2O3Afanas'ev, V.V. / Schulte-Braucks, C. / Wirths, S. / Schubert, J. / Buca, D. et al. | 2017
- 145
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Demonstration of 2e12cm−2eV−1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOTGaur, A. / Balaji, Y. / Lin, D. / Adelmann, C. / Van Houdt, J. / Heyns, M. / Mocuta, D. / Radu, I. et al. | 2017
- 150
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Resistive switching in MIM structure based on overstoichiometric tantalum oxideKuzmichev, D.S. / Lebedinskii, Yu.Yu. et al. | 2017
- 154
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Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interfaceWan, H.W. / Lin, Y.H. / Lin, K.Y. / Chang, T.W. / Cai, R.F. / Kwo, J. / Hong, M. et al. | 2017
- 158
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Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodesFerrandis, Philippe / Charles, Matthew / Gillot, Charlotte / Escoffier, René / Morvan, Erwan / Torres, Alphonse / Reimbold, Gilles et al. | 2017
- 164
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Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealingUmana-Membreno, G.A. / Song, Y. / Akhavan, N.D. / Antoszewski, J. / Paine, D.C. / Zaslavsky, A. / Faraone, L. et al. | 2017
- 168
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Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devicesMallol, M.M. / Gonzalez, M.B. / Campabadal, F. et al. | 2017
- 173
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Simulations of transient processes and characteristics of the nc-MOS structuresTanous, D. / Mazurak, A. / Majkusiak, B. et al. | 2017
- 178
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Experimental band alignment of Ta2O5/GaN for MIS-HEMT applicationsSawangsri, K. / Das, P. / Supardan, S.N. / Mitrovic, I.Z. / Hall, S. / Mahapatra, R. / Chakraborty, A.K. / Treharne, R. / Gibbon, J. / Dhanak, V.R. et al. | 2017
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Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductorTaoka, Noriyuki / Kubo, Toshiharu / Yamada, Toshikazu / Egawa, Takashi / Shimizu, Mitsuaki et al. | 2017
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Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbideKita, Koji / Hirai, Hirohisa / Kajifusa, Hiroyuki / Kuroyama, Kohei / Ishinoda, Kei et al. | 2017
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Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectricsBolshakov, Pavel / Zhao, Peng / Azcatl, Angelica / Hurley, Paul K. / Wallace, Robert M. / Young, Chadwin D. et al. | 2017
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Raman study of lysozyme amyloid fibrils suspended on super-hydrophobic surfaces by shear flowMoretti, Manola / Allione, Marco / Marini, Monica / Torre, Bruno / Giugni, Andrea / Limongi, Tania / Das, Gobind / Di Fabrizio, Enzo et al. | 2017
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Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative studyChang, T.W. / Lin, K.Y. / Lin, Y.H. / Young, L.B. / Kwo, J. / Hong, M. et al. | 2017
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Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealingLin, Jun / Monaghan, Scott / Cherkaoui, Karim / Povey, Ian M. / Sheehan, Brendan / Hurley, Paul K. et al. | 2017
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Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glassKonashuk, A. / Filatova, E. / Sakhonenkov, S. / Afanas'ev, V.V. et al. | 2017
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Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurementsShaw, A. / Jin, J.D. / Mitrovic, I.Z. / Hall, S. / Wrench, J.S. / Chalker, P.R. et al. | 2017
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Effect of double-stacked active layer on stability of Si-IZO thin-film transistorLim, Yooseong / Hwang, Namgyung / Yi, Moonsuk et al. | 2017
- 225
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Opportunity of dipole layer formation at non-SiO2 dielectric interfaces in two cases: Multi-cation systems and multi-anion systemsFei, Jiayang / Kita, Koji et al. | 2017
- 230
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Failure of Weibull distribution to represent switching statistics in OxRAMRaghavan, N. et al. | 2017
- 235
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Hole trapping in amorphous HfO2 and Al2O3 as a source of positive chargingStrand, Jack / Dicks, Oliver A. / Kaviani, Moloud / Shluger, Alexander L. et al. | 2017
- 240
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Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectricHan, Hoon Hee / Lim, Donghwan / Sergeevich, Andrey Sokolov / Jeon, Yu-Rim / Lee, Jae Ho / Son, Seok Ki / Choi, Changhwan et al. | 2017
- 245
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Ultra-low power 1T-DRAM in FDSOI technologyEl Dirani, H. / Lee, K.H. / Parihar, M.S. / Lacord, J. / Martinie, S. / Barbe, J-Ch. / Mescot, X. / Fonteneau, P. / Broquin, J.-E. / Ghibaudo, G. et al. | 2017
- 250
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Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on SiChouprik, A. / Chernikova, A. / Markeev, A. / Mikheev, V. / Negrov, D. / Spiridonov, M. / Zarubin, S. / Zenkevich, A. et al. | 2017
- 254
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Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3Mart, C. / Zybell, S. / Riedel, S. / Czernohorsky, M. / Seidel, K. / Weinreich, W. et al. | 2017
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Interaction of work function tuning and negative bias temperature instability for future nodesPantisano, Luigi / Srinivasan, Purushothaman / Kim, Taehoon / Chu, Tao / Ozbek, Merve / Zainuddin, Abu Naser / Hasanuzzaman, M. / Dag, Sefa / Paliwoda, P. / Bajaj, M. et al. | 2017
- 262
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High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidationCzernohorsky, M. / Seidel, K. / Kühnel, K. / Niess, J. / Sacher, N. / Kegel, W. / Lerch, W. et al. | 2017
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- 271
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Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)Lin, K.Y. / Young, L.B. / Cheng, C.K. / Chen, K.H. / Lin, Y.H. / Wan, H.W. / Cai, R.F. / Lo, S.C. / Li, M.Y. / Kwo, J. et al. | 2017
- 275
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Atomic and electronic structure of oxygen polyvacancies in ZrO2Perevalov, T.V. / Islamov, D.R. et al. | 2017
- 279
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Defect creation in amorphous HfO2 facilitated by hole and electron injectionStrand, Jack / Kaviani, Moloud / Shluger, Alexander L. et al. | 2017
- 284
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The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursorKim, Young Jin / Lim, Donghwan / Han, Hoon Hee / Sergeevich, Andrey Sokolov / Jeon, Yu-Rim / Lee, Jae Ho / Son, Seok Ki / Choi, Changhwan et al. | 2017
- 289
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MOSFET degradation dependence on input signal power in a RF power amplifierCrespo-Yepes, A. / Barajas, E. / Martin-Martinez, J. / Mateo, D. / Aragones, X. / Rodriguez, R. / Nafria, M. et al. | 2017
- 293
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Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacksFeng, X. / Raghavan, N. / Mei, S. / Du, L. / Pey, K.L. / Wong, H. et al. | 2017
- 298
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Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layersMazurak, A. / Mroczyński, R. / Jasiński, J. / Tanous, D. / Majkusiak, B. / Kano, S. / Sugimoto, H. / Fujii, M. / Valenta, J. et al. | 2017
- 304
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Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interfaceKolomiiets, N.M. / Afanas'ev, V.V. / Stesmans, A. / Fadida, S. / Eizenberg, M. et al. | 2017
- 308
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Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctionsLim, J.H. / Raghavan, N. / Mei, S. / Lee, K.H. / Noh, S.M. / Kwon, J.H. / Quek, E. / Pey, K.L. et al. | 2017
- 313
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Interface state generation of Al2O3/InGaAs MOS structures by electrical stressYoon, S.-H. / Chang, C.-Y. / Ahn, D.-H. / Takenaka, M. / Takagi, S. et al. | 2017
- 318
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Author Index| 2017
- A1
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Insulating Films on Semiconductors (INFOS 2017)Dąbrowski, Jarek / Niu, Gang / Wenger, Christian et al. | 2017
- IFC
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Editorial Board| 2017
- v
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Table of Contents| 2017