The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy (Englisch)
- Neue Suche nach: Tzou, A.J.
- Neue Suche nach: Chien, K.F.
- Neue Suche nach: Lai, H.Y.
- Neue Suche nach: Ku, J.T.
- Neue Suche nach: Lee, L.
- Neue Suche nach: Fan, W.C.
- Neue Suche nach: Chou, W.C.
- Neue Suche nach: Tzou, A.J.
- Neue Suche nach: Chien, K.F.
- Neue Suche nach: Lai, H.Y.
- Neue Suche nach: Ku, J.T.
- Neue Suche nach: Lee, L.
- Neue Suche nach: Fan, W.C.
- Neue Suche nach: Chou, W.C.
In:
Journal of Crystal Growth
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378
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466-469
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2013
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy
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Beteiligte:Tzou, A.J. ( Autor:in ) / Chien, K.F. ( Autor:in ) / Lai, H.Y. ( Autor:in ) / Ku, J.T. ( Autor:in ) / Lee, L. ( Autor:in ) / Fan, W.C. ( Autor:in ) / Chou, W.C. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 378 ; 466-469
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Verlag:
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Erscheinungsdatum:01.01.2013
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 378
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The Seventeenth International Conference on Molecular Beam Epitaxy, Nara, Japan, September 23–28, 2012| 2013
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PrefaceAkimoto, Katsuhiro / Suemasu, Takashi / Okumura, Hajime et al. | 2013
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Size-dependent contact angle of Ga droplets on GaAsJo, Masafumi / Mano, Takaaki / Sakuma, Yoshiki / Sakoda, Kazuaki et al. | 2013
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Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surfaceKanisawa, Kiyoshi et al. | 2013
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Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)Ito, Tomonori / Hirai, Kentaro / Akiyama, Toru / Nakamura, Kohji et al. | 2012
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Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layersNovikov, S.V. / Powell, R.E.L. / Kent, A.J. / Foxon, C.T. et al. | 2013
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Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4×4)α surfaceMurase, Isao / Akiyama, Toru / Nakamura, Kohji / Ito, Tomonori et al. | 2013
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Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substratesNguyen Thanh, T. / Robert, C. / Giudicelli, E. / Létoublon, A. / Cornet, C. / Ponchet, A. / Rohel, T. / Balocchi, A. / Micha, J.S. / Perrin, M. et al. | 2012
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Ab initio-based approach to incorporation of N atoms on GaAs(001) surfacesSugitani, Tatsuhiko / Akiyama, Toru / Nakamura, Kohji / Ito, Tomonori et al. | 2013
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In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)Takahasi, M. / Nakata, Y. / Suzuki, H. / Ikeda, K. / Kozu, M. / Hu, W. / Ohshita, Y. et al. | 2013
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Direct stress measurement of Si(111) 7×7 reconstructionAsaoka, Hidehito / Yamazaki, Tatsuya / Yokoyama, Yuta / Yamaguchi, Kenji et al. | 2013
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As flux dependence on RHEED transients during InAs quantum dot growthShimomura, K. / Shirasaka, T. / Tex, D.M. / Kamiya, I. et al. | 2013
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In situ STM observations of step structures in a trench around an InAs QD at 300°CToujyou, T. / Otsu, T. / Wakamatsu, D. / Kurisaka, M. / Konishi, T. / Tsukamoto, S. et al. | 2013
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Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxyHasegawa, S. / Shimoi, T. / Asahi, H. et al. | 2013
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Incorporation of Mn atoms into the GaAs(110) surfaceHirayama, Motoi / Tsukamoto, Shiro et al. | 2013
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Self-assembly of Ga droplets attached to GaAs quantum dotsElborg, Martin / Noda, Takeshi / Mano, Takaaki / Jo, Masafumi / Sakuma, Yoshiki / Sakoda, Kazuaki et al. | 2013
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Photocapacitance study of MBE grown GaInNAsSb thin film solar cellsIslam, Muhammad Monirul / Miyashita, Naoya / Ahsan, Nazmul / Sakurai, Takeaki / Akimoto, Katsuhiro / Okada, Yoshitaka et al. | 2013
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Photoluminescence dynamics of excitons at the mini-Brillouin-zone edge in a GaAs/AlAs superlatticeNakayama, M. / Yamashita, T. / Hasegawa, T. et al. | 2013
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Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectorsGu, Y. / Zhang, Y.G. / Wang, K. / Fang, X. / Li, C. / Zhou, L. / Li, A.Z. / Li, Hsby. et al. | 2013
- 69
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Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength regionShono, Takuya / Mizuta, Shogo / Kawamura, Yuichi et al. | 2013
- 73
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Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxyYoshimoto, Masahiro / Itoh, Mizuki / Tominaga, Yoriko / Oe, Kunishige et al. | 2013
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Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layersKajikawa, Y. / Okuzako, T. / Matsui, Y. et al. | 2012
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Crystalline and electrical characteristics of C60 uniformly doped GaAs layersNishinaga, Jiro / Horikoshi, Yoshiji et al. | 2012
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Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substratesJin, Ri Guo / Yagi, Shuhei / Hijikata, Yasuto / Kuboya, Shigeyuki / Onabe, Kentaro / Katayama, Ryuji / Yaguchi, Hiroyuki et al. | 2012
- 88
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MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructuresMendez-Garcia, V.H. / González-Fernández, J.V. / Espinosa-Vega, L.I. / Díaz, T. / Romano, R. / Rosendo, E. / Gallardo, S. / Vázquez-Cortes, D. / Shimomura, S. et al. | 2013
- 92
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Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistanceLaw, J.J.M. / Carter, A.D. / Lee, S. / Huang, C.-Y. / Lu, H. / Rodwell, M.J.W. / Gossard, A.C. et al. | 2013
- 96
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Growth of dilute BGaP alloys by molecular beam epitaxyUrakami, N. / Fukami, F. / Sekiguchi, H. / Okada, H. / Wakahara, A. et al. | 2013
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Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructuresZamora-Peredo, L. / Cortes-Mestizo, I.E. / García-González, L. / Hernández-Torres, J. / Vázquez-Cortes, D. / Shimomura, S. / Rosa, A. Cisneros-de la / Méndez-García, V.H. et al. | 2013
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Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial filmsEspinosa-Vega, L.I. / Rodriguez, A.G. / Cruz-Hernandez, E. / Martinez-Veliz, I. / Rojas-Ramirez, J. / Ramirez-Lopez, M. / Nieto-Navarro, J. / Lopez-Lopez, M. / Mendez-Garcia, V.H. et al. | 2013
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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillarsRichter, M. / Uccelli, E. / Taboada, A.G. / Caimi, D. / Daix, N. / Sousa, M. / Marchiori, C. / Siegwart, H. / Falub, C.V. / von Känel, H. et al. | 2013
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Sb irradiation effect on growth of GaAs thin film on Si (111) substrateMorohara, Osamu / Geka, Hirotaka / Moriyasu, Yoshitaka / Kuze, Naohiro et al. | 2013
- 117
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Growth of heterostructures on InAs for high mobility device applicationsContreras-Guerrero, R. / Wang, S. / Edirisooriya, M. / Priyantha, W. / Rojas-Ramirez, J.S. / Bhuwalka, K. / Doornbos, G. / Holland, M. / Oxland, R. / Vellianitis, G. et al. | 2013
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Type-II InAs/GaSb superlattice grown on InP substrateMiura, K. / Iguchi, Y. / Kawamura, Y. et al. | 2013
- 125
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Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxySemtsiv, M.P. / Aleksandrova, A. / Elagin, M. / Monastyrskyi, G. / Kischkat, J.-F. / Flores, Y.V. / Masselink, W.T. et al. | 2013
- 129
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Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111)substrateToyota, H. / Okabe, A. / Endoh, T. / Jinbo, Y. / Uchitomi, N. et al. | 2013
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InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nmGozu, Shin-ichiro / Mozume, Teruo / Kuwatsuka, Haruhiko / Ishikawa, Hiroshi et al. | 2012
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Growth and characterization of GaDyN/GaN double barrierstructuresSano, M. / Zhou, Y.K. / Emura, S. / Hasegawa, S. / Asahi, H. et al. | 2013
- 141
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Growth of metamorphic InGaP layers on GaAs substratesYan, J.Y. / Gong, Q. / Yue, L. / Liu, Q.B. / Cheng, R.H. / Cao, C.F. / Wang, Y. / Wang, S.M. et al. | 2013
- 145
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A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxyLi, Hua / Liu, Shi / Cellek, Oray O. / Ding, Ding / Shen, Xiao-Meng / Steenbergen, Elizabeth H. / Fan, Jin / Lin, Zhiyuan / He, Zhao-Yu / Zhang, Qiang et al. | 2013
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Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam sourceOhta, Natsumi / Arimoto, Kohei / Shiraga, Masahiro / Ishii, Kenta / Inada, Masatoshi / Yanai, Shunsuke / Nakai, Yuko / Akiyama, Hidefumi / Mochizuki, Toshimitsu / Takahashi, Toshio et al. | 2013
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Characteristics of CuGaSe2 layers grown on GaAs substratesFujita, Miki / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2013
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Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxyTseng, Ya Hsin / Yang, Chu Shou / Wu, Chia Hsing / Chiu, Jai Wei / Yang, Min De / Wu, Chih-Hung et al. | 2012
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Characterization of Cu(In,Ga)Se2 grown by MBE by two-wavelength excited photoluminescence spectroscopyGupta, Amit / Hiraoka, Norimu / Sakurai, Takeaki / Yamada, Akimasa / Ishizuka, Shogo / Niki, Shigeru / Akimoto, Katsuhiro et al. | 2013
- 165
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Electronic and transport properties of Eu-substituted infinite-layer strontium ferrite thin filmsChikamatsu, Akira / Matsuyama, Toshiya / Katayama, Tsukasa / Hirose, Yasushi / Kumigashira, Hiroshi / Oshima, Masaharu / Fukumura, Tomoteru / Hasegawa, Tetsuya et al. | 2013
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Rock-salt Zn1−xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxyLu, C.-Y.J. / Yan, T. / Chang, L. / Ploog, K.H. / Chou, M.M.C. / Chiang, C.-M. et al. | 2012
- 172
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Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxyLu, C.-Y.J. / Chang, L. / Ploog, K.H. / Chou, M.M.C. et al. | 2013
- 177
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Growth and application of epitaxial heterostructures with polymorphous rare-earth oxidesDargis, R. / Clark, A. / Arkun, E. / Roucka, R. / Smith, R. / Demkov, A.A. / Lebby, M. et al. | 2012
- 180
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Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxyChen, Cheng-Yu / Yang, Cheng-Yu / Chyi, Jen-Inn / Wu, Chih-Hung et al. | 2013
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Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxidesYamamoto, Hideki / Krockenberger, Yoshiharu / Naito, Michio et al. | 2012
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Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxyNakamura, K. / Toh, K. / Baba, M. / Ajmal Khan, M. / Du, W. / Toko, K. / Suemasu, T. et al. | 2013
- 193
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Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxyBaba, M. / Toh, K. / Toko, K. / Hara, K.O. / Usami, N. / Saito, N. / Yoshizawa, N. / Suemasu, T. et al. | 2013
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Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxyKoike, S. / Toh, K. / Baba, M. / Toko, K. / Hara, K.O. / Usami, N. / Saito, N. / Yoshizawa, N. / Suemasu, T. et al. | 2013
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cellsAjmal Khan, M. / Hara, Kosuke O. / Nakamura, Kotaro / Du, Weijie / Baba, Masakazu / Toh, Katsuaki / Suzuno, Mitsushi / Toko, Kaoru / Usami, Noritaka / Suemasu, Takashi et al. | 2013
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Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layersWatanabe, Yoshinori / Oshima, Ryuji / Sakata, Isao / Matsubara, Koji / Sakamoto, Isao et al. | 2013
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Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxyChien, K.F. / Hsu, W.L. / Tzou, A.J. / Lin, Y.C. / Chou, W.C. / Lee, L. / Chia, C.H. / Yang, C.S. et al. | 2013
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Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substratesArimoto, Keisuke / Sakai, Shoichiro / Furukawa, Hiroshi / Yamanaka, Junji / Nakagawa, Kiyokazu / Usami, Noritaka / Hoshi, Yusuke / Sawano, Kentarou / Shiraki, Yasuhiro et al. | 2013
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Optical properties of Zn1−xMnxO thin films grown by molecular beam epitaxyChien, K.F. / Yang, Y.L. / Tzou, A.J. / Chou, W.C. et al. | 2012
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Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dotsLee, Ling / Fan, Wen-Chung / Chien, Kun-Feng / Tzou, An-Jye / Chou, Wu-Ching et al. | 2012
- 226
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High-quality SiGe films grown with compositionally graded buffer layers for solar cell applicationsOshima, Ryuji / Watanabe, Yoshinori / Yamanaka, Mitsuyuki / Kawanami, Hitoshi / Sakamoto, Isao / Matsubara, Koji / Sakata, Isao et al. | 2013
- 230
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Change of Si(110) reconstructed structure by Ge nanocluster formationYokoyama, Yuta / Yamazaki, Tatsuya / Asaoka, Hidehito et al. | 2012
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Growth of II–VI ZnSe/CdSe nanowires for quantum dot luminescenceBellet-Amalric, E. / Elouneg-Jamroz, M. / Rueda-Fonseca, P. / Bounouar, S. / Hertog, M. Den / Bougerol, C. / André, R. / Genuist, Y. / Poizat, J.P. / Kheng, K. et al. | 2012
- 238
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Interface properties of MBE grown epitaxial oxides on GaAsContreras-Guerrero, R. / Edirisooriya, M. / Noriega, O.C. / Droopad, R. et al. | 2013
- 243
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Solid phase epitaxy of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contentsShimamoto, K. / Hirose, Y. / Nakao, S. / Fukumura, T. / Hasegawa, T. et al. | 2013
- 246
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Effects of different substrate surface modifications on the epitaxial ZnO/SiWang, Peng / Jin, Changlian / Zhan, Huahan / Chen, Xiaohang / Xu, Fuchun / Zhou, Yinghui / Wang, Huiqiong / Kang, Junyong et al. | 2013
- 251
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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation techniqueSawano, K. / Hoshi, Y. / Nagakura, S. / Arimoto, K. / Nakagawa, K. / Usami, N. / Shiraki, Y. et al. | 2013
- 254
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Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxyTetzlaff, D. / Wietler, T.F. / Bugiel, E. / Osten, H.J. et al. | 2013
- 259
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Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cellsTanaka, Tooru / Nagao, Yasuhiro / Mochinaga, Tomohiro / Saito, Katsuhiko / Guo, Qixin / Nishio, Mitsuhiro / Yu, Kin M. / Walukiewicz, Wladek et al. | 2013
- 263
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Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devicesKobayashi, Toshiki / Nomura, Ichirou / Murakami, Keisuke / Kishino, Katsumi et al. | 2013
- 266
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MBE growth and characterization of a II–VI distributed Bragg reflector and microcavity lattice-matched to MgTeRousset, J.-G. / Kobak, J. / Slupinski, T. / Jakubczyk, T. / Stawicki, P. / Janik, E. / Tokarczyk, M. / Kowalski, G. / Nawrocki, M. / Pacuski, W. et al. | 2013
- 270
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On the structural properties of MgS-rich II–VI-based microcavitiesKlembt, Sebastian / Frank, Kristian / Qian, Gang / Klein, Thorsten / Rosenauer, Andreas / Hommel, Detlef / Kruse, Carsten et al. | 2012
- 274
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Ultra low density of CdTe quantum dots grown by MBEKobak, J. / Rousset, J.-G. / Rudniewski, R. / Janik, E. / Slupinski, T. / Kossacki, P. / Golnik, A. / Pacuski, W. et al. | 2013
- 278
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MBE fabrication of III-N-based laser diodes and its development to industrial systemSkierbiszewski, C. / Siekacz, M. / Turski, H. / Muziol, G. / Sawicka, M. / Perlin, P. / Wasilewski, Z.R. / Porowski, S. et al. | 2013
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Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxyAgrawal, M. / Dharmarasu, N. / Radhakrishnan, K. / Ravikiran, L. et al. | 2013
- 287
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Cubic GaN quantum dots embedded in zinc-blende AlN microdisksBürger, M. / Kemper, R.M. / Bader, C.A. / Ruth, M. / Declair, S. / Meier, C. / Förstner, J. / As, D.J. et al. | 2012
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Growth of cubic GaN on 3C–SiC/Si (001) nanostructuresKemper, R.M. / Hiller, L. / Stauden, T. / Pezoldt, J. / Duschik, K. / Niendorf, T. / Maier, H.J. / Meertens, D. / Tillmann, K. / As, D.J. et al. | 2012
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Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBECruz-Hernández, E. / Ramirez-Lopez, M. / Pérez-Caro, M. / Mani-Gonzalez, P.G. / Herrera-Gómez, A. / Gorbatchev, A. Yu / López-López, M. / Méndez-García, V.H. et al. | 2013
- 299
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Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)Peta, Koteswara Rao / Lee, Sang-Tae / Moon-Deock, Kim / Oh, Jae-Eung / Kim, Song-Gang / Kim, Tae-Geun et al. | 2013
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Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxyNaritsuka, S. / Lin, C.H. / Uchiyama, S. / Maruyama, T. et al. | 2012
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RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layerKakuda, M. / Morikawa, S. / Kuboya, S. / Katayama, R. / Yaguchi, H. / Onabe, K. et al. | 2013
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Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBEHigashi, K. / Hasegawa, S. / Sano, S. / Zhou, Y.K. / Asahi, H. et al. | 2013
- 314
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Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)Sano, S. / Hasegawa, S. / Mitsuno, Y. / Higashi, K. / Ishimaru, M. / Sakurai, T. / Ohta, H. / Asahi, H. et al. | 2013
- 319
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Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBENechaev, D.V. / Aseev, P.A. / Jmerik, V.N. / Brunkov, P.N. / Kuznetsova, Y.V. / Sitnikova, A.A. / Ratnikov, V.V. / Ivanov, S.V. et al. | 2013
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Molecular beam epitaxy growth of InSb1−xBix thin filmsSong, Yuxin / Wang, Shumin / Saha Roy, Ivy / Shi, Peixiong / Hallen, Anders / Lai, Zonghe et al. | 2013
- 329
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Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layersMohamed, Mohd Ambri / Lam, Pham Tien / Otsuka, N. et al. | 2013
- 333
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Graphene films grown at low substrate temperature and the growth model by using MBE techniqueLin, Meng-Yu / Guo, Wei-Ching / Wu, Meng-Hsun / Wang, Pro-Yao / Lee, Si-Chen / Lin, Shih-Yen et al. | 2013
- 337
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Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs filmLee, Sangyeop / Lee, Hakjoon / Yoo, Taehee / Lee, Sanghoon / Liu, X. / Furdyna, J.K. et al. | 2012
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Epitaxial growth of ferromagnetic CoxFe4−xN thin films on SrTiO3 (001) and magneticpropertiesSanai, Tatsunori / Ito, Keita / Toko, Kaoru / Suemasu, Takashi et al. | 2013
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Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer filmsSakai, Tomoya / Matsumoto, Y. / Shibamoto, K. / Osuga, H. / Uno, K. / Tanaka, Ichiro et al. | 2013
- 351
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Crystal growth of magnetic dihydride GdxY1−xH2 for generation of spin currentSakuraba, T. / Hirama, H. / Sakai, M. / Honda, Z. / Hayakawa, M. / Okoshi, T. / Kitajima, A. / Oshima, A. / Higuchi, K. / Hasegawa, S. et al. | 2013
- 356
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Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayersHirama, H. / Hayakawa, M. / Okoshi, T. / Sakai, M. / Higuchi, K. / Kitajima, A. / Oshima, A. / Hasegawa, S. et al. | 2013
- 361
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Planar Hall effect in a single GaMnAs film grown on Si substrateWon, Jaehyuk / Shin, Jinsik / Lee, Sangyeop / Lee, Hakjoon / Yoo, Taehee / Lee, Sanghoon / Liu, X. / Furdyna, J.K. et al. | 2012
- 365
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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxyFunase, Y. / Suzuno, M. / Toko, K. / Suemasu, T. et al. | 2013
- 368
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Fabrication and characterization of DH-α6T monolayer film on silicon dioxideYe, Rongbin / Fujinaka, Yusuke / Ohata, Koji / Baba, Mamoru et al. | 2013
- 372
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Growth of high-quality CuCl thin films by a technique involving electron-beam irradiationIchimiya, Masayoshi / Le Quang, Phuong / Ashida, Masaaki / Itoh, Tadashi et al. | 2013
- 376
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Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxyNoda, Keiichi / Terai, Yoshikazu / Fujiwara, Yasufumi et al. | 2012
- 381
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Control of magnetic anisotropy in (Ga,Mn)As with etching depth of specimen boundariesHashimoto, Y. / Iye, Y. / Katsumoto, S. et al. | 2012
- 385
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Spin-injection into epitaxial graphene on silicon carbideKonishi, Keita / Cui, Zhixin / Hiraki, Takahiro / Yoh, Kanji et al. | 2013
- 388
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Influence of hydrogen incorporation on texture and grain size in YH2 filmsOkoshi, T. / Hayakawa, M. / Hirama, H. / Sakai, M. / Higuchi, K. / Kitajima, A. / Oshima, A. / Hasegawa, S. et al. | 2013
- 393
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Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAsKuno, Y. / Sasaki, T. / Kiba, T. / Kaibyshev, V.Kh. / Liaci, F. / Toropov, A.A. / Ivanov, S.V. / Murayama, A. et al. | 2013
- 397
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STM observation of MnAs initial growth surface on GaAs(001)-c(4×4)α and 6×6 reconstructionsHiraoka, Masahiro / Kaku, Shigeru / Yoshino, Junji et al. | 2013
- 400
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Suppression of Andreev current due to transverse current flow in an InAs two-dimensional electronsTakahashi, Y. / Hashimoto, Y. / Iye, Y. / Katsumoto, S. et al. | 2013
- 404
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Molecular beam epitaxial growth of graphene using cracked ethyleneMaeda, Fumihiko / Hibino, Hiroki et al. | 2013
- 410
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Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRDOomae, H. / Irizawa, S. / Jinbo, Y. / Toyota, H. / Kambayashi, T. / Uchitomi, N. et al. | 2013
- 415
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Effect of Ag-doped bathocuproine on the recombination properties of exciton in fullereneWang, Shenghao / Sakurai, Takeaki / Komatsu, Keiichirou / Akimoto, Katsuhiro et al. | 2013
- 418
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Thickness dependence of magnetic anisotropy in MnSb epitaxial layersNishizawa, Nozomi / Munekata, Hiro et al. | 2012
- 422
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Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layersOsaka, Yuji / Tanabe, Hiroyuki / Yamada, Kazuhiro / Yamaguchi, Koichi et al. | 2012
- 426
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Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum ringsLin, Wei-Hsun / Wang, Kai-Wei / Lin, Shih-Yen / Wu, Meng-Chyi et al. | 2013
- 430
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In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxySugaya, T. / Oshima, R. / Matsubara, K. / Niki, S. et al. | 2013
- 435
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InGaAs quantum-dot-in-ring structure by droplet epitaxyBoonpeng, P. / Kiravittaya, S. / Thainoi, S. / Panyakeow, S. / Ratanathammaphan, S. et al. | 2013
- 439
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Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxyGotoh, Kazuhiro / Oshima, Ryuji / Sugaya, Takeyoshi / Sakata, Isao / Matsubara, Koji / Kondo, Michio et al. | 2013
- 442
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Structural properties of ultra-low density nanoholes for the generation of well-separated GaAs quantum dotsSonnenberg, D. / Graf, A. / Paulava, V. / Hansen, W. / Heyn, Ch. et al. | 2012
- 446
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GaAs nanopillars by self-assembled droplet etchingHeyn, Ch. / Sonnenberg, D. / Bartsch, Th. / Wetzel, A. / Kerbst, J. / Hansen, W. et al. | 2012
- 450
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Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxyAkahane, Kouichi / Yamamoto, Naokatsu et al. | 2013
- 454
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RF-MBE growth of cubic InN nano-scale dots on cubic GaNSuzuki, Junichiro / Orihara, Misao / Yagi, Shuhei / Hijikata, Yasuto / Yaguchi, Hiroyuki et al. | 2013
- 459
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Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emissionNishi, K. / Kageyama, T. / Yamaguchi, M. / Maeda, Y. / Takemasa, K. / Yamamoto, T. / Sugawara, M. / Arakawa, Y. et al. | 2012
- 463
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Observation of optical anisotropy of highly uniform InAs quantum dotsUemura, M. / Ohta, J. / Yamaguchi, R. / Yamaguchi, K. / Tackeuchi, A. et al. | 2013
- 466
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The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxyTzou, A.J. / Chien, K.F. / Lai, H.Y. / Ku, J.T. / Lee, L. / Fan, W.C. / Chou, W.C. et al. | 2013
- 470
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Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chainsHakkarainen, T.V. / Schramm, A. / Luna, E. / Tommila, J. / Guina, M. et al. | 2013
- 475
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Growth of GaSb quantum dots on GaAs (311)AKawazu, Takuya / Noda, Takeshi / Mano, Takaaki / Sakuma, Yoshiki / Sakaki, Hiroyuki et al. | 2012
- 480
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Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhancedepitaxyZander, M. / Nishinaga, J. / Horikoshi, Y. et al. | 2013
- 485
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Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriersKitada, Takahiro / Ueyama, Hyuga / Morita, Ken / Isu, Toshiro et al. | 2012
- 489
-
Self-organization and photoluminescence properties of Pb0.7Sn0.3Te quantum dots embedded in a CdTe matrixKoike, Kazuto / Iwamoto, Atsushi / Yano, Mitsuaki et al. | 2013
- 493
-
Surface/interface-related optical properties in Si nanodisks fabricated by neutral-beam etching using bio-templatesKiba, Takayuki / Suzaki, Kenta / Li, Hao / Igarashi, Makoto / Samukawa, Seiji / Murayama, Akihiro et al. | 2013
- 497
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Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxyBietti, S. / Cavigli, L. / Minari, S. / Adorno, S. / Isella, G. / Vinattieri, A. / Gurioli, M. / Sanguinetti, S. et al. | 2013
- 501
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Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light sourceHino, Yuji / Ozaki, Nobuhiko / Ohkouchi, Shunsuke / Ikeda, Naoki / Sugimoto, Yoshimasa et al. | 2013
- 506
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Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowiresRieger, Torsten / Lepsa, Mihail Ion / Schäpers, Thomas / Grützmacher, Detlev et al. | 2012
- 511
-
Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistorCui, Zhixin / Ishikura, Tomotsugu / Jabeen, Fauzia / Harmand, J.-C. / Yoh, Kanji et al. | 2013
- 515
-
Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxyAdorno, S. / Bietti, S. / Sanguinetti, S. et al. | 2012
- 519
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InP1−xAsx quantum dots in InP nanowires: A route for single photon emittersHarmand, Jean-Christophe / Jabeen, Fauzia / Liu, Linsheng / Patriarche, Gilles / Gauthron, Karine / Senellart, Pascale / Elvira, David / Beveratos, Alexios et al. | 2013
- 524
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Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patternsChokamnuai, T. / Rattanadon, P. / Thainoi, S. / Panyakeow, S. / Kanjanachuchai, S. et al. | 2013
- 529
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Fabrication of InAs nanoscale rings by droplet epitaxyNoda, T. / Jo, M. / Mano, T. / Kawazu, T. / Sakaki, H. et al. | 2012
- 532
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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxyDheeraj, D.L. / Munshi, A.M. / Christoffersen, O.M. / Kim, D.C. / Signorello, G. / Riel, H. / van Helvoort, A.T.J. / Weman, H. / Fimland, B.O. et al. | 2013
- 537
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Infrared emitting property and spherical symmetry of colloidal PbS quantum dotsNakashima, Seisuke / Kikushima, Kosuke / Mukai, Kohki et al. | 2013
- 542
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Thiol-stabilized PbS quantum dots with stable luminescence in the infrared spectral rangeNakashima, Seisuke / Hoshino, Ai / Cai, Junjiang / Mukai, Kohki et al. | 2013
- 546
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Phase coherent transport in GaAs/AlGaAs core–shellnanowiresLucot, Damien / Jabeen, Fauzia / Ramdani, Mohammed R. / Patriarche, Gilles / Faini, Giancarlo / Mailly, Dominique / Harmand, Jean-Christophe et al. | 2013
- 549
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Shape evolution of low density InAs quantum dots in the partial capping process by using As2 sourceOhkouchi, Shunsuke / Kumagai, Naoto / Watanabe, Katsuyuki / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2013
- 553
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Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light sourceOzaki, N. / Nakatani, Y. / Ohkouchi, S. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. / Clarke, E. / Hogg, R.A. et al. | 2013
- 558
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Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperatureKumagai, Naoto / Ohkouchi, Shunsuke / Watanabe, Katsuyuki / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2013
- 562
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Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition techniqueKwoen, Jinkwan / Watanabe, Katsuyuki / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2013
- 566
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InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxyBanerjee, Animesh / Frost, Thomas / Jahangir, Shafat / Stark, Ethan / Bhattacharya, Pallab et al. | 2013
- 571
-
Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperatureLin, Wei-Hsun / Wang, Kai-Wei / Lin, Shih-Yen / Wu, Meng-Chyi et al. | 2012
- 576
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InGaP solar cells fabricated using solid-source molecular beam epitaxySugaya, T. / Takeda, A. / Oshima, R. / Matsubara, K. / Niki, S. / Okano, Y. et al. | 2012
- 579
-
Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μmZhou, L. / Gu, Y. / Zhang, Y.G. / Wang, K. / Fang, X. / Cao, Y.Y. / Li, A.Z. / Li, Hsby. et al. | 2013
- 583
-
Broadband InGaAs quantum dot-in-a-well solar cells of p-type wellsTzeng, T.E. / Chuang, K.Y. / Lay, T.S. / Chang, C.H. et al. | 2013
- 587
-
The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3μmLi, Y.Y. / Li, A.Z. / Gu, Y. / Zhang, Y.G. / Li, H.S.B.Y. / Wang, K. / Fang, X. et al. | 2013
- 591
-
MBE grown Ga2O3 and its power device applicationsSasaki, Kohei / Higashiwaki, Masataka / Kuramata, Akito / Masui, Takekazu / Yamakoshi, Shigenobu et al. | 2013
- 596
-
InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxyChen, Jianxin / Zhou, Yi / Xu, Zhicheng / Xu, Jiajia / Xu, Qingqing / Chen, Honglei / He, Li et al. | 2013
- 600
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High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealingAhn, Woojin / Seok, Ogyun / Song, Seung Min / Han, Min-Koo / Ha, Min-Woo et al. | 2013
- 604
-
The investigation of GaInP solar cell grown by all-solid MBEDai, P. / Lu, S.L. / Zhu, Y.Q. / Ji, L. / He, W. / Tan, M. / Yang, H. / Arimochi, M. / Yoshida, H. / Uchida, S. et al. | 2012
- 607
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Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBEElagin, Mikaela / Schulz, P. / Elagin, Mstislav / Semtsiv, M.P. / Kirmse, H. / Mogilatenko, A. / Masselink, W.T. et al. | 2013
- 611
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Uncooled InGaSb photovoltaic infrared detectors for gas sensingKatsumata, Takashi / Nishimura, Ryosuke / Yamaoka, Keisuke / Camargo, Edson Gomes / Morishita, Tomohiro / Ueno, Koichiro / Tokuo, Seiichi / Goto, Hiromasa / Kuze, Naohiro et al. | 2013
- 614
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Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasersMonastyrskyi, G. / Aleksandrova, A. / Elagin, M. / Semtsiv, M.P. / Masselink, W.T. / Bryksa, V. et al. | 2012
- 618
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InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxyTeng, Teng / Xu, Anhuai / Ai, Likun / Sun, Hao / Qi, Ming et al. | 2013
- 622
-
Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflectorHsing, J.Y. / Tzeng, T.E. / Kuo, M.Y. / Lay, T.S. / Shih, M.H. et al. | 2013
- 627
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Growth of high-density 1.06-μm InGaAs/GaAs quantum dots for high gain lasers by molecular beamepitaxyWatanabe, Katsuyuki / Akiyama, Tomoyuki / Yokoyama, Yoshitaka / Takemasa, Keizo / Nishi, Kenichi / Tanaka, Yu / Sugawara, Mitsuru / Arakawa, Yasuhiko et al. | 2013
- 631
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All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxidesTokranov, V. / Madisetti, S. / Yakimov, M. / Nagaiah, P. / Faleev, N. / Oktyabrsky, S. et al. | 2013
- 636
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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperatureXu, Xuejun / Usami, Noritaka / Maruizumi, Takuya / Shiraki, Yasuhiro et al. | 2012
- IFC
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Editorial Board| 2013
- iii
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Contents| 2013