Low-dimensional systems: Quantum wires and quantum boxes by MBE (Englisch)
Nationallizenz
- Neue Suche nach: Gossard, A.C.
- Neue Suche nach: English, J.H.
- Neue Suche nach: Petroff, P.M.
- Neue Suche nach: Cibert, J.
- Neue Suche nach: Dolan, G.J.
- Neue Suche nach: Pearton, S.J.
- Neue Suche nach: Gossard, A.C.
- Neue Suche nach: English, J.H.
- Neue Suche nach: Petroff, P.M.
- Neue Suche nach: Cibert, J.
- Neue Suche nach: Dolan, G.J.
- Neue Suche nach: Pearton, S.J.
In:
Journal of Crystal Growth
;
81
, 1-4
;
101-105
;
1987
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Low-dimensional systems: Quantum wires and quantum boxes by MBE
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Beteiligte:Gossard, A.C. ( Autor:in ) / English, J.H. ( Autor:in ) / Petroff, P.M. ( Autor:in ) / Cibert, J. ( Autor:in ) / Dolan, G.J. ( Autor:in ) / Pearton, S.J. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 81, 1-4 ; 101-105
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Verlag:
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Erscheinungsdatum:01.01.1987
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 81, Ausgabe 1-4
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Current understanding and applications of the RHEED intensity oscillation techniqueDobson, P.J. / Joyce, B.A. / Neave, J.H. / Zhang, J. et al. | 1987
- 9
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RHEED oscillation study by modulated electron beam during GaAs growthSugiura, Hideo / Kawashima, Minoru / Horikoshi, Yoshiji et al. | 1987
- 13
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Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBEVan Hove, J.M. / Cohen, P.I. et al. | 1987
- 19
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Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAsBriones, F. / Golmayo, D. / González, L. / Ruiz, A. et al. | 1987
- 26
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A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structuresMadhukar, A. / Chen, P. / Voillot, F. / Thomsen, M. / Kim, J.Y. / Tang, W.C. / Ghaisas, S.V. et al. | 1987
- 34
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Precisely controlled compositional gradients in MBE grown AlGaAs/GaAs structuresHarbison, J.P. / Peterson, L.D. / Levkoff, J. et al. | 1987
- 38
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Infra-red transmission spectroscopy of GaAs during molecular beam epitaxyHellman, E.S. / Harris, J.S. Jr. et al. | 1987
- 43
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Intensity variations of reflection high-energy electron diffraction during atomic layer epitaxial growth and sublimation of Zn chalcogenidesYao, Takafumi / Takeda, Toshihiko et al. | 1987
- 49
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On the practical applications of MBE surface phase diagramsNewstead, S.M. / Kubiak, R.A.A. / Parker, E.H.C. et al. | 1987
- 55
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The observation of oscillations in secondary electron emission during the growth of GaAs by MBEErickson, L.P. / Longerbone, M.D. / Youngman, R.C. / Dies, B.E. et al. | 1987
- 59
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RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surfaceSakamoto, T. / Kawamura, T. / Nago, S. / Hashiguchi, G. / Sakamoto, K. / Kuniyoshi, K. et al. | 1987
- 65
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Monolayer and bilayer growth on Ge(111)Aarts, J. / Gerits, W.M. / Larsen, P.K. et al. | 1987
- 67
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First stages of the MBE growth of InAs on (001)GaAsHouzay, F. / Guille, C. / Moison, J.M. / Henoc, P. / Barthe, F. et al. | 1987
- 73
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Molecular beam epitaxial growth of ZnS on a (100)-oriented Si substrateYokoyama, Meiso / Kashiro, Ko-ichi / Ohta, Shin-ichi et al. | 1987
- 79
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Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structuresStolz, W. / Wagner, J. / Ploog, K. et al. | 1987
- 85
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Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBEFukunaga, Toshiaki / Takamori, Takeshi / Nakashima, Hisao et al. | 1987
- 91
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Raman scattering study of heavily Si-doped GaAs-Ga1−xAlxAs superlattices grown by molecular beam epitaxyKirillov, D. / Webb, C. / Eckstein, J.N. et al. | 1987
- 97
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In situ spectroscopic ellipsometry of mercury cadmium telluride MBE layersDemay, Y. / Gailliard, J.P. / Medina, P. et al. | 1987
- 101
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Low-dimensional systems: Quantum wires and quantum boxes by MBEGossard, A.C. / English, J.H. / Petroff, P.M. / Cibert, J. / Dolan, G.J. / Pearton, S.J. et al. | 1987
- 106
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Anisotropic transport in modulation doped quantum well structuresRadulescu, D.C. / Wicks, G.W. / Schaff, W.J. / Calawa, A.R. / Eastman, L.F. et al. | 1987
- 109
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Optical properties of thin layer AlAs/GaAs superlatticesTamargo, M.C. / Nahory, R.E. / Meynadier, M.-H. / Finkman, E. / Sturge, M.D. / Hwang, D.M. / Ihm, J. et al. | 1987
- 116
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Growth and properties of quasiperiodic heterostructuresClarke, Roy / Todd, J. / Merlin, R. / Bajema, K. / Bhattacharya, P.K. / Juang, F.-Y. et al. | 1987
- 120
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Structural studies of GaAs-AlAs superlattices grown by MBEFewster, P.F. / Gowers, J.P. / Hilton, D. / Foxon, C.T. et al. | 1987
- 121
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High resolution electron microscopy of InAs/GaAs strained-layer superlatticesD'Anterroches, C. / Marzin, J.Y. / Le Roux, G. / Goldstein, L. et al. | 1987
- 130
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Electron and hole mobility in modulation doped GaInAs-AlInAs strained layer superlatticeHirose, K. / Mizutani, T. / Nishi, K. et al. | 1987
- 136
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Determination of heterojunction mobilities using a novel magnetic field-dependent hall techniqueBeck, W.A. / Wilson, R.A. / Goldberg, A.C. et al. | 1987
- 144
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Negative differential resistance device built in a biwell GaAs/AlGaAs superlatticeKano, H. / Tanaka, Y. / Sawaki, N. / Hashimoto, M. / Igarashi, I. et al. | 1987
- 149
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Acceptor Raman scattering in GaAs-AlxGa1−xAs quantum-well structuresGammon, D. / Merlin, R. / Huang, D. / Morkoç, H. et al. | 1987
- 153
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Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBETanaka, M. / Sakaki, H. et al. | 1987
- 159
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Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionTu, C.W. / Miller, R.C. / Wilson, B.A. / Petroff, P.M. / Harris, T.D. / Kopf, R.F. / Sputz, S.K. / Lamont, M.G. et al. | 1987
- 164
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Low temperature MBE growth of high quality AlGaAsShiraki, Y. / Mishima, T. / Morioka, M. et al. | 1987
- 169
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Elimination of GaAs oval defects and high-throughput fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by MBEFronius, H. / Fischer, A. / Ploog, K. et al. | 1987
- 175
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The use of antimony for the passivation of MBE grown GaAs surfacesKerr, T.M. / Peacock, D.C. / Holmes, S.J. / Wood, C.E.C. et al. | 1987
- 177
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Optical measurement of Ga beam flux for MBEMcClintock, J.A. / Wilson, R.A. et al. | 1987
- 181
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DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogenBosacchi, A. / Franchi, S. / Ghezzi, C. / Gombia, E. / Guzzi, M. / Staehli, J.L. / Allegri, P. / Avanzini, V. et al. | 1987
- 188
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Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxySaito, Junji / Igarashi, Takeshi / Nakamura, Tomohiro / Kondo, Kazuo / Shibatomi, Akihiro et al. | 1987
- 193
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Polar-on-nonpolar epitaxyKroemer, Herbert et al. | 1987
- 205
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The growth of GaAs on Si by MBEKoch, S.M. / Rosner, S.J. / Hull, R. / Yoffe, G.W. / Harris, J.S. Jr. et al. | 1987
- 214
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Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxyPukite, P.R. / Cohen, P.I. et al. | 1987
- 221
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Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surfaceJunming, Zhou / Yi, Huang / Yongkang, Li / Yi, Jia Wei et al. | 1987
- 224
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Rheed studies and interface analysis of GaAs grown on Si(001)Woodbridge, K. / Gowers, J.P. / Fewster, P.F. / Neave, J.H. / Joyce, B.A. et al. | 1987
- 226
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High mobility GaAs/AlAs/(211)Si structures grown by MBEChristou, A. / Varmazis, K. / Hatzopoulos, Z. et al. | 1987
- 231
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Influence of substrate misorientation and temperature on MBE-grown SiZeindl, H.P. / Fuenzalida, V. / Messarosch, J. / Eisele, I. / Oppolzer, H. / Huber, V. et al. | 1987
- 237
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Lattice relaxation of InAs heteroepitaxy on GaAsMunekata, H. / Chang, L.L. / Woronick, S.C. / Kao, Y.H. et al. | 1987
- 243
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Epitaxial growth of InP on Si using MIBE techniqueShimizu, S. / Komiya, S. et al. | 1987
- 245
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Auger electron spectroscopy study of GaAs layer growth on InP substrateMatsui, Y. / Hayashi, H. / Yoshida, K. et al. | 1987
- 249
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Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistorsPanish, M.B. et al. | 1987
- 261
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Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devicesTsang, W.T. et al. | 1987
- 270
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Doping of GaAs in metalorganic MBE using gaseous sourcesHeinecke, H. / Werner, K. / Weyers, M. / Lüth, H. / Balk, P. et al. | 1987
- 276
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Silicon doping from disilane in gas source MBE of GaAsKimura, K. / Horiguchi, S. / Kamon, K. / Shimazu, M. / Mashita, M. / Mihara, M. / Ishii, M. et al. | 1987
- 281
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Defects in GaAs films grown by MOMBEWerner, K. / Heinecke, H. / Weyers, M. / Lüth, H. / Balk, P. et al. | 1987
- 288
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Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBEClaxton, P.A. / Roberts, J.S. / David, J.P.R. / Sotomayor-Torres, C.M. / Skolnick, M.S. / Tapster, P.R. / Nash, K.J. et al. | 1987
- 296
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MBE growth of Ga-Al-In-As ternary and quaternary alloy compositionsScott, E.G. / Andrews, D.A. / Davies, G.J. et al. | 1987
- 298
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Spectroscopic studies of shallow defects in MBE GaSbNicholas, D.J. / Lee, M. / Hamilton, B. / Singer, K.E. et al. | 1987
- 304
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Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationPloog, Klaus et al. | 1987
- 314
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Electrical properties of indium doped GaAs layers grown by MBEMissous, M. / Singer, K.E. / Nicholas, D.J. et al. | 1987
- 319
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Effect of a coincident Pb flux during mbe growth on the electrical properties of GaAs and AlGaAs layersAkatsu, Y. / Ohno, H. / Hasegawa, H. / Hashizume, T. et al. | 1987
- 326
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A preliminary study of impurities and defects in Si-MBE layersHoughton, R.F. / Patel, G. / Leong, W.Y. / Whall, T.E. / Parker, E.H.C. / Kubiak, R.A.A. / Nayler, R. et al. | 1987
- 332
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Incorporation and desorption of sulphur In InP grown by MBEAiraksinen, V.M. / Cheng, T.S. / Stanley, C.R. et al. | 1987
- 338
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Molecular beam epitaxy of InP using low-energy P + ion beamMaruno, S. / Morishita, Y. / Isu, T. / Nomura, Y. / Ogata, H. et al. | 1987
- 344
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GaAs with very low acceptor impurity background grown by molecular beam epitaxyLarkins, E.C. / Hellman, E.S. / Schlom, D.G. / Harris, J.S. Jr. / Kim, M.H. / Stillman, G.E. et al. | 1987
- 349
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MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devicesHiyamizu, S. / Fujii, T. / Muto, S. / Inata, T. / Nakata, Y. / Sugiyama, Y. / Sasa, S. et al. | 1987
- 359
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Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performanceLiu, Shih-Ming / Das, M.B. / Peng, C.K. / Klem, J. / Henderson, T. / Kopp, W. / Morkoç, H. et al. | 1987
- 368
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Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodesMiller, D.L. / Asbeck, P.M. et al. | 1987
- 373
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Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayersJuang, F.-Y. / Hong, W.-P. / Berger, P.R. / Bhattacharya, P.K. / Das, U. / Singh, J. et al. | 1987
- 378
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Use of pseudomorphic GaInAs in Heterojunction Bipolar TransistorsEnquist, P.M. / Ramberg, L.P. / Najjar, F.E. / Schaff, W.J. / Kavanagh, K.L. / Wicks, G.W. / Eastman, L.F. et al. | 1987
- 383
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Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxyGriem, H.T. / Hsieh, K.H. / D'Haenens, I.J. / Delaney, M.J. / Henige, J.A. / Wicks, G.W. / Brown, A.S. et al. | 1987
- 391
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A new GaAs/Ga1−xAlxAs superlattice transistor grown by molecular beam epitaxyAlexandre, F. / Harmand, J.C. / Lievin, J.L. / Dubon-Chevallier, C. / Ankri, D. / Minot, C. / Palmier, J.F. et al. | 1987
- 396
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MBE growth of AlxGayIn1−x−yAs for a DHBT structureGoldstein, L. / Praseuth, J.P. / Joncour, M.C. / Primot, J. / Henoc, P. / Pelouard, J.L. / Hesto, P. et al. | 1987
- 400
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Double heterostructure Pb1−xCdxS1−ySey/PbS/Pb1−xCdxS1−ySey lasers grown by molecular beam epitaxyKoguchi, N. / Kiyosawa, T. / Takahashi, S. et al. | 1987
- 405
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MBE of Pb1−xEuxSe for the use in IR devicesNorton, P. / Tacke, M. et al. | 1987
- 411
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Silicon molecular beam epitaxy: 1984–1986Bean, John C. et al. | 1987
- 421
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In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBERobbins, D.J. / Pidduck, A.J. / Cullis, A.G. / Chew, N.G. / Hardeman, R.W. / Gasson, D.B. / Pickering, C. / Daw, A.C. / Johnson, M. / Jones, R. et al. | 1987
- 428
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Leed studies of Si molecular beam epitaxy onto Si(111)Horn, M. / Henzler, M. et al. | 1987
- 434
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Characterization of MBE grown Si/GexSi1−x strained layer superlatticesHoughton, D.C. / Lockwood, D.J. / Dharma-Wardana, M.W.C. / Fenton, E.W. / Baribeau, J.-M. / Denhoff, M.W. et al. | 1987
- 440
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Assessment of band offsets in Si/SiGe strained layer superlattices by vertical transport measurementsJorke, H. / Herzog, H.-J. / Kasper, E. / Kibbel, H. et al. | 1987
- 445
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Electrical measurements on MBE grown Si/Si1−xGex heterojunctionsDenhoff, M.W. / Baribeau, J.-M. / Houghton, D.C. / Rajan, K. et al. | 1987
- 451
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High quality heteroepitaxial Ge growth on (100) Si by MBEFukuda, Yukio / Kohama, Yoshitaka et al. | 1987
- 458
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Monolithic integration using differential Si-MBEKasper, E. / Herzog, H.J. / Wörner, K. et al. | 1987
- 463
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Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistorArnaud D'Avitaya, F. / Chroboczek, J.A. / D'Anterroches, C. / Glastre, G. / Campidelli, Y. / Rosencher, E. et al. | 1987
- 470
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NiSi2 layers grown on Si (111) by MBE and SPEVon Känel, H. / Graf, T. / Henz, J. / Ospelt, M. / Wachter, P. et al. | 1987
- 476
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High quality NiSi2/Si epitaxial films grown by MBEShiraki, Y. / Ohshima, T. / Ishizaka, A. / Nakagawa, K. et al. | 1987
- 483
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Developments and trends in MBE of II–VI Hg-based compoundsFaurie, Jean-Pierre et al. | 1987
- 489
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Observation of a quasi-two-dimensional electron gas at an InSb/CdTe interface prepared by MBEZheng, Y.-D. / Chang, Y.H. / McCombe, B.D. / Farrow, R.F.C. / Temofonte, T. / Shirland, F.A. / Noreika, A.J. et al. | 1987
- 491
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Use of Rheed oscillations for the growth of 2D magnetic semiconductor superlattices (MnSe/ZnSe)Kolodziejski, L.A. / Gunshor, R.L. / Otsuka, N. / Gu, B.P. / Hefetz, Y. / Nurmikko, A.V. et al. | 1987
- 495
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Growth and characterization of ZnSe-ZnTe strained-layer superlatticesKobayashi, Masakazu / Kimura, Rhuhei / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1987
- 501
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Mismatch strain measurements of MBE grown CdTeMagnea, N. / Dal'bo, F. / Fontaine, C. / Million, A. / Gaillard, J.P. / Dang, Le Si / D'Augbigné, Y.Merle / Tatarenko, S. et al. | 1987
- 505
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Growth and aluminium doping of MBE cadmium telluride on gallium arsenideAshenford, D.E. / Medland, J.D. / Edwards-Shea, L. / Page, A.D. / Wood, C.E.C. et al. | 1987
- 506
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Microscopic interactions at semiconductor heterojunctions: GaAs-CdTe and InSb-CdTe interfacesWestwood, D.I. / Mackey, K.J. / Allen, P.M.G. / Herrenden-Harker, W.G. / Williams, R.H. et al. | 1987
- 508
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Growth and interdiffusion in CdTe/InSb multilayersKimata, M. / Ryoji, A. / Aoki, T. et al. | 1987
- 512
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Effects of beam pressure ratios on film quality in MBE growth of ZnSeCheng, H. / Mohapatra, S.K. / Potts, J.E. / Smith, T.L. et al. | 1987
- 518
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The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAsYao, Takafumi / Okada, Yasumasa / Matsui, Susumu / Ishida, Kohtaro / Fujimoto, Isao et al. | 1987
- 524
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MBE growth of single crystal α-Fe films on ZnSe (001) and (110)Jonker, B.T. / Krebs, J.J. / Prinz, G.A. / Qadri, S.B. et al. | 1987
- 530
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Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2Chelluri, B. / Chang, T.Y. / Ourmazd, A. / Dayem, A.H. / Zyskind, J.L. / Srivastava, A. et al. | 1987
- 536
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MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junctionKaneda, Shigeo / Sakamoto, Yoshiki / Mihara, Tadashi / Tanaka, Takao et al. | 1987
- 543
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Graded IIa fluoride buffer layers for heteroepitaxy of lead chalcogenides and CdTe on SiZogg, H. / Maier, P. / Melchior, H. et al. | 1987
- 545
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Molecular-beam epitaxial growth of (Al,Ga)As/(Ca,Sr)F2 multilayer structures as a broad-band high-reflectivity mirrorTu, C.W. / Ajuria, S.A. / Temkin, H. et al. | 1987
- 547
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Electrical characteristics of GaAs grown on (Ca,Sr)F2 by molecular beam epitaxyFontaine, C. / Berrabah, M. / Nejjar, J. / Munoz-Yague, A. et al. | 1987
- 552
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MBE growth of BaF2/(Ga, In)(As, Sb) structuresTruscott, W.S. / Wen, Y.F. / Lee, M.E. et al. | 1987
- 557
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Epitaxial growth of niobium thin filmsClaassen, J.H. / Wolf, S.A. / Qadri, S.B. / Jones, L.D. et al. | 1987
- 562
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Probing interfaces of ultra thin films on magnetic substrates using ferromagnetic resonance at 73.55 GHzHeinrich, B. / Arrott, A.S. / Cochran, J.F. / Purcell, S.T. / Urquhart, K.B. / Myrtle, K. et al. | 1987
- 571
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Author index| 1987
- 578
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Subject index| 1987
- ii
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Editorial Board| 1987
- ix
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PrefaceFoxon, C.T. / Harris, J.J. et al. | 1987