Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses (Englisch)
- Neue Suche nach: Chen, Qianhuang
- Neue Suche nach: Gosalvez, Miguel A.
- Neue Suche nach: Li, Qi
- Neue Suche nach: Xing, Yan
- Weitere Informationen zu Xing, Yan:
- https://orcid.org/0000-0001-8443-2000
- Neue Suche nach: Zhou, Zaifa
- Neue Suche nach: Chen, Qianhuang
- Neue Suche nach: Gosalvez, Miguel A.
- Neue Suche nach: Li, Qi
- Neue Suche nach: Xing, Yan
- Neue Suche nach: Zhou, Zaifa
In:
Materials Science in Semiconductor Processing
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173
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2023
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses
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Beteiligte:Chen, Qianhuang ( Autor:in ) / Gosalvez, Miguel A. ( Autor:in ) / Li, Qi ( Autor:in ) / Xing, Yan ( Autor:in ) / Zhou, Zaifa ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: Elsevier Ltd
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Erscheinungsdatum:31.12.2023
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and dosesChen, Qianhuang / Gosalvez, Miguel A. / Li, Qi / Xing, Yan / Zhou, Zaifa et al. | 2023
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