Courses in microelectronics and reliability (Englisch)
In:
Microelectronics and Reliability
;
9
, 6
;
438-439
;
1970
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Courses in microelectronics and reliability
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Erschienen in:Microelectronics and Reliability ; 9, 6 ; 438-439
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Verlag:
-
Erscheinungsdatum:01.01.1970
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Format / Umfang:2 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 9, Ausgabe 6
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 437
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Computers are like cancer because they are completely out of sync with their total environmentGianelle, W.H. et al. | 1970
- 438
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Courses in microelectronics and reliability| 1970
- 440
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Calendar of International Conferences, Symposia, Lectures and Meetings of Interest| 1970
- 443
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Call for paper| 1970
- 445
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Recent United Kingdom patents in microelectronics| 1970
- 448
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Updating of reliability criteria documents| 1970
- 448
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Some Bayes estimates of long-run availability in a two-state system| 1970
- 448
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Configuration management: The interface of enigneering, production, and quality control| 1970
- 448
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Reliability at CNET| 1970
- 449
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Fault trees for reliability analysis| 1970
- 449
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Specification X-1414: A reliability milestone| 1970
- 449
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Determining optimum reliability programs| 1970
- 449
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Role of product evaluation facility in reliability| 1970
- 450
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BS9000 and integrated circuits| 1970
- 450
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Computerized reliability analysis using REACT| 1970
- 450
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Reliability physics—An assessment| 1970
- 450
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Gain degradation in planar transistors following emitter-base reverse biassing| 1970
- 450
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The philosophy of reliability| 1970
- 450
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Reliability testing uniformity, efficiency and economy needed| 1970
- 450
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People subsystem measurement for total reliability| 1970
- 451
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Reliability physics investigation of integrated circuit failures| 1970
- 451
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LSI reliability assessment and prediction| 1970
- 451
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Electromigration in integrated circuits| 1970
- 451
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Metal bridging under planar oxide| 1970
- 451
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The effectiveness of part pre-failure analysis| 1970
- 452
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Watt-megahertz ratings run second to high reliability in foreign r-f power transistors| 1970
- 452
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Testing of mulilayer printed circuits' reliability| 1970
- 452
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Reliability: SAS programme| 1970
- 452
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System effectiveness analysis of complex systems| 1970
- 452
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Characteristic traits of semiconductor failures| 1970
- 452
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Detection of internal crystal imperfections| 1970
- 453
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Systems effectiveness evaluations| 1970
- 453
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Design of reliable yet economical industrial control systems| 1970
- 453
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Long-term storage and system reliability| 1970
- 453
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Analyzing and interpreting field failure data| 1970
- 453
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Reliability for N/C machines—A must!| 1970
- 454
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Establishment of a redundancy priority for spacecraft elements| 1970
- 454
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Reliability factors in the design process| 1970
- 454
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A redundancy analysis technique| 1970
- 454
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F-111A Reliability| 1970
- 454
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Circuit design selection—A reliability factor| 1970
- 455
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A unifying reliability analysis philosophy| 1970
- 455
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A systems unavailability trade-off program| 1970
- 455
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Correlation of reliability performance measurements| 1970
- 455
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Some economic aspects of maintenance versus redundancy for manned space stations| 1970
- 455
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On condition maintenance programs| 1970
- 455
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Repair queueing models for system availability| 1970
- 456
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A flip chip interconnection and packaging system| 1970
- 456
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Standard items form troubleshooter for electronic systems on British jets| 1970
- 456
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Other approaches to integrated circuits| 1970
- 456
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Failure analysis as a tool for determining semiconductor screens| 1970
- 456
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A software reliability program| 1970
- 456
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MOS course—I. The basic structures| 1970
- 456
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Hybrid microelectronics modules designed using basic thermal design guidelines| 1970
- 457
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Reliability considerations pertinent to materials systems used in microbonding| 1970
- 457
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Hybrid integrated circuits with beam lead silicon chips and beam lead subcarriers| 1970
- 457
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The use of reflow soldered face bonded chips in hybrid integrated circuits| 1970
- 457
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High-speed interconnections using ECL-TC| 1970
- 457
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Controlled collapse reflow chip joining| 1970
- 458
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Flip-chip/beam-lead microbonding techniques| 1970
- 458
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Micro-wire wrapping at 1·27 mm centres| 1970
- 458
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The choice of reflow soldering method| 1970
- 458
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Systematic design language an advanced layout tool for artwork| 1970
- 458
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Generating IC artwork automatically saves time, prevents costly errors| 1970
- 459
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Dynamic performance of Schottky-barrier field-effect transistors| 1970
- 459
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Theory of low frequency noise in Si MOST'S| 1970
- 459
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New beam-lead connection method boosts semiconductor memory yields| 1970
- 459
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Radio frequency sputtering in IC processing| 1970
- 459
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Automatic interconnection system for electronic components| 1970
- 459
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The precision manufacture and registration of masks for vacuum evaporation| 1970
- 459
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An algorithm for the placement of large scale integrated circuit elements| 1970
- 459
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The low-power-drain microelectronic VHF amplifier| 1970
- 460
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Microwave properties of Schottky-barrier field-effect transistors| 1970
- 460
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Berechnung der Kapazitäts-und Induktivitätsbeläge ebener Streifenleitungen durch konforme Abbildung| 1970
- 460
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Characteristics of aluminum-silicon Schottky barrier diode| 1970
- 460
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Small signal equivalent circuit of an isotype heterojunction dominated by traps| 1970
- 460
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Electrical properties of silicon doped with platinum| 1970
- 460
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Monolithic voltage regulators| 1970
- 460
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Graphical method for the determination of junction parameters and of multiplication parameters| 1970
- 461
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Anomalous diffusion in semiconductors—A quantitative analysis| 1970
- 461
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Electron tunneling and contact resistance of metal-silicon contact barriers| 1970
- 461
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Deep levels within the forbidden gap of silicon-on-sapphire films| 1970
- 461
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Non-destructive determination of carrier concentration in epitaxial silicon using a total internal reflection technique| 1970
- 461
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Open circuit voltage decay behavior of junction devices| 1970
- 461
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X-ray measurement of elastic strain and annealing in semiconductors| 1970
- 462
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Sodium migration through electron-gun evaporated Al2O3 and double layer Al2O3-SiO2 structures| 1970
- 462
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On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor| 1970
- 462
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Measurement of the ionization rates in diffused silicon p-n junctions| 1970
- 462
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Bulk trapping effect on carrier diffusion length as determined by the surface photovoltage method: Theory| 1970
- 463
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Superlattice and negative differential conductivity in semiconductors| 1970
- 463
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High-frequency properties and uses of MIS varactors| 1970
- 463
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Analysis of surface and bulk impurities in silicon single crystal slices by neutron activation| 1970
- 463
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Dielectric films for Ge planar devices| 1970
- 463
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Bipolar compatible MOS ICs| 1970
- 463
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Metal edge coverage and control of charge accumulation in rf shuttered insulators| 1970
- 464
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Termination resistance in thick-film resistors| 1970
- 464
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Silicon and silicon-dioxide processing for high-frequency MESFET preparation| 1970
- 464
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Calculation of the current density in the contacts of a thin film resistor| 1970
- 464
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Homogeneous attenuation elements in thin film technique| 1970
- 464
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Thick film technique—State of development and further outlooks| 1970
- 464
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Review of vacuum deposition mechanisms—I.| 1970
- 464
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Sputtering materials for electronic applications| 1970
- 464
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Argon content of SiO2 films deposited by rf sputtering in argon| 1970
- 465
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Review of vacuum deposition mechanisms—II| 1970
- 465
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Vapour-deposited thin-film diodes—A comparison| 1970
- 465
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Die Berechnung des komplexen Widerstandes von Dünnschichtkondensatoren| 1970
- 465
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Automatic impedance matching system for rf sputtering| 1970
- 465
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Re-emission of sputtered SiO2 during growth and its relation to film quality| 1970
- 465
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Contribution of discrete and flat thick film resistors to logic circuit reliability| 1970
- 466
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Spin-wave energy and source of inhomogeneities in thin films| 1970
- 466
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Review of vacuum deposition mechanisms—III| 1970
- 466
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Variables in the thick-film screen printing process and their effect on register tolerances in large-scale production| 1970
- 466
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Thick film materials capabilities: 1969| 1970
- 466
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Review of vacuum deposition mechanisms—IV| 1970
- 467
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Introduction to microelectronicsG.W.A.D. et al. | 1970
- 468
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Papers to be published in future issues| 1970
- 469
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The reliability of the VC 10 ILS equipmentSargeant, H. et al. | 1970
- 491
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A voltage variable resistor mostTownsend, W.G. / Strachan, A.J. et al. | 1970
- 497
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Integration density and power dissipation of MOS and bipolar shift registers—A comparisonKasperkovitz, D. / Van Santen, J.G. et al. | 1970
- 503
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Short pulse rating of integrated circuit conductorsKroko, L.J. et al. | 1970
- 511
-
Failure rate distribution of electronic componentsGrange, J.M. / Dorleans, J. et al. | 1970
- 515
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Comment on the paper “failure of aluminium contacts to silicon in shallow diffused transistors”Cunningham, J.A. / Wakefield, R.H. et al. | 1970