Effect of dopants (F, Si) material on the structure and properties of hydrogenated DLC film by plane cathode PECVD (Englisch)
- Neue Suche nach: Wei, Xubing
- Neue Suche nach: Chen, Lin
- Neue Suche nach: Zhang, Minglan
- Neue Suche nach: Lu, Zhibin
- Neue Suche nach: Zhang, Guangan
- Neue Suche nach: Wei, Xubing
- Neue Suche nach: Chen, Lin
- Neue Suche nach: Zhang, Minglan
- Neue Suche nach: Lu, Zhibin
- Neue Suche nach: Zhang, Guangan
In:
Diamond and Related Materials
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110
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2020
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effect of dopants (F, Si) material on the structure and properties of hydrogenated DLC film by plane cathode PECVD
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Beteiligte:Wei, Xubing ( Autor:in ) / Chen, Lin ( Autor:in ) / Zhang, Minglan ( Autor:in ) / Lu, Zhibin ( Autor:in ) / Zhang, Guangan ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:18.09.2020
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Effect of dopants (F, Si) material on the structure and properties of hydrogenated DLC film by plane cathode PECVDWei, Xubing / Chen, Lin / Zhang, Minglan / Lu, Zhibin / Zhang, Guangan et al. | 2020
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