Zn-doping of GaAs nanowires grown by Aerotaxy (Englisch)
- Neue Suche nach: Yang, Fangfang
- Weitere Informationen zu Yang, Fangfang:
- https://orcid.org/0000-0003-3879-6895
- Neue Suche nach: Messing, Maria E.
- Neue Suche nach: Mergenthaler, Kilian
- Neue Suche nach: Ghasemi, Masoomeh
- Neue Suche nach: Johansson, Jonas
- Neue Suche nach: Wallenberg, L. Reine
- Neue Suche nach: Pistol, Mats-Erik
- Neue Suche nach: Deppert, Knut
- Neue Suche nach: Samuelson, Lars
- Neue Suche nach: Magnusson, Martin H.
- Neue Suche nach: Yang, Fangfang
- Neue Suche nach: Messing, Maria E.
- Neue Suche nach: Mergenthaler, Kilian
- Neue Suche nach: Ghasemi, Masoomeh
- Neue Suche nach: Johansson, Jonas
- Neue Suche nach: Wallenberg, L. Reine
- Neue Suche nach: Pistol, Mats-Erik
- Neue Suche nach: Deppert, Knut
- Neue Suche nach: Samuelson, Lars
- Neue Suche nach: Magnusson, Martin H.
In:
Journal of Crystal Growth
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414
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181-186
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2014
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Zn-doping of GaAs nanowires grown by Aerotaxy
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Beteiligte:Yang, Fangfang ( Autor:in ) / Messing, Maria E. ( Autor:in ) / Mergenthaler, Kilian ( Autor:in ) / Ghasemi, Masoomeh ( Autor:in ) / Johansson, Jonas ( Autor:in ) / Wallenberg, L. Reine ( Autor:in ) / Pistol, Mats-Erik ( Autor:in ) / Deppert, Knut ( Autor:in ) / Samuelson, Lars ( Autor:in ) / Magnusson, Martin H. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 414 ; 181-186
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2014
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 414
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- 1
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PrefaceRudra, Alok et al. | 2015
- 3
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Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substratesFujii, Hiromasa / Sodabanlu, Hassanet / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2014
- 10
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AlAsP-based strain-balancing in MOVPE-grown distributed Bragg reflectorsMaaßdorf, A. / Weyers, M. et al. | 2014
- 15
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Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPEWanarattikan, Pornsiri / Sanorpim, Sakuntam / Denchitcharoen, Somyod / Uesugi, Kenjiro / Kuboya, Shigeyuki / Onabe, Kentaro et al. | 2014
- 21
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Optimization of InGaP metamorphic buffers grown by MOVPEEbert, C. / Pulwin, Z. / Reynolds, C.L. Jr. / Ramos Sn., F. / Li, Y. / Farrell, S. et al. | 2014
- 27
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Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasersYamaguchi, Harunaka / Nagira, Takashi / Kawazu, Zempei / Sakaino, Go / Nishida, Takehiro / Takemi, Masayoshi et al. | 2014
- 32
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Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphireFleischmann, Simon / Mogilatenko, Anna / Hagedorn, Sylvia / Richter, Eberhard / Goran, Daniel / Schäfer, Peter / Zeimer, Ute / Weyers, Markus / Tränkle, Günther et al. | 2014
- 38
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Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wellsCzernecki, Robert / Grzanka, Ewa / Smalc-Koziorowska, Julita / Grzanka, Szymon / Schiavon, Dario / Targowski, Grzegorz / Plesiewicz, Jerzy / Prystawko, Pawel / Suski, Tadeusz / Perlin, Piotr et al. | 2014
- 42
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Effect of antimony on growth mode and properties of thick InGaN layersKoch, Holger / Pietzonka, Ines / Galler, Bastian / Strassburg, Martin / Kalisch, Holger / Vescan, Andrei / Lugauer, Hans-Juergen et al. | 2015
- 49
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Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wellsRossow, U. / Hoffmann, L. / Bremers, H. / Buß, E.R. / Ketzer, F. / Langer, T. / Hangleiter, A. / Mehrtens, T. / Schowalter, M. / Rosenauer, A. et al. | 2014
- 56
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Resonant Raman and FTIR spectra of carbon doped GaNIto, S. / Kobayashi, H. / Araki, K. / Suzuki, K. / Sawaki, N. / Yamashita, K. / Honda, Y. / Amano, H. et al. | 2014
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GaN:Co epitaxial layers grown by MOVPEŠimek, P. / Sedmidubský, D. / Klímová, K. / Mikulics, M. / Maryško, M. / Veselý, M. / Jurek, K. / Sofer, Z. et al. | 2014
- 69
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Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor depositionBalaji, M. / Ramesh, R. / Arivazhagan, P. / Jayasakthi, M. / Loganathan, R. / Prabakaran, K. / Suresh, S. / Lourdudoss, S. / Baskar, K. et al. | 2014
- 76
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Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor depositionLi, Xiao-Hang / Wei, Yong O. / Wang, Shuo / Xie, Hongen / Kao, Tsung-Ting / Satter, Md. Mahbub / Shen, Shyh-Chiang / Douglas Yoder, P. / Detchprohm, Theeradetch / Dupuis, Russell D. et al. | 2014
- 81
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Growth of aluminium nitride with linear change of ammonia flowCaban, Piotr / Rudzinski, Mariusz / Wojcik, Marek / Gaca, Jaroslaw / Strupinski, Wlodek et al. | 2014
- 87
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Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studiesRudziński, M. / Kudrawiec, R. / Patriarche, G. / Kucharski, R. / Caban, P. / Strupiński, W. et al. | 2014
- 94
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Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxyDinh, Duc V. / Conroy, M. / Zubialevich, V.Z. / Petkov, N. / Holmes, J.D. / Parbrook, P.J. et al. | 2014
- 100
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Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on oriented GaNCaliebe, Marian / Meisch, Tobias / Madel, Manfred / Scholz, Ferdinand et al. | 2014
- 100
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Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on Formula Not Shown oriented GaNCaliebe, M. / Meisch, T. / Madel, M. / Scholz, F. et al. | 2015
- 105
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Growth of AlInN/GaN distributed Bragg reflectors with improved interface qualityBerger, C. / Dadgar, A. / Bläsing, J. / Lesnik, A. / Veit, P. / Schmidt, G. / Hempel, T. / Christen, J. / Krost, A. / Strittmatter, A. et al. | 2014
- 110
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High-quality InSb growth by metalorganic vapor phase epitaxyYoshikawa, Akira / Moriyasu, Yoshitaka / Kuze, Naohiro et al. | 2014
- 114
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Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPENishio, Mitsuhiro / Saito, Katsuhiko / Urata, Kensuke / Okamoto, Yasuhiro / Tanaka, Daichi / Araki, Yasuhiro / Abiru, Masakatsu / Mori, Eiichiro / Tanaka, Tooru / Guo, Qixin et al. | 2014
- 119
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MOVPE grown periodic AlN/BAlN heterostructure with high boron contentLi, X. / Sundaram, S. / El Gmili, Y. / Genty, F. / Bouchoule, S. / Patriache, G. / Disseix, P. / Réveret, F. / Leymarie, J. / Salvestrini, J.-P. et al. | 2014
- 123
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Structural, electrical, and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor depositionRoffi, Teuku Muhammad / Uchida, Kazuo / Nozaki, Shinji et al. | 2014
- 130
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Chemical vapor deposition of Pd/Cu alloy films from a new single source precursorKrisyuk, Vladislav V. / Shubin, Yuriy V. / Senocq, François / Turgambaeva, Asiya E. / Duguet, Thomas / Igumenov, Igor K. / Vahlas, Constantin et al. | 2014
- 135
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Features of oxide layer formation in high-aspect slot structures by means of MOCVDShevtsov, Yuri V. / Kuchumov, Boris М. / Kruchinin, Vladimir N. / Spesivtsev, Evgeni V. / Golovnev, Igor F. / Igumenov, Igor К. et al. | 2014
- 143
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Deposition of pure gold thin films from organometallic precursorsParkhomenko, Roman G. / Trubin, Sergey V. / Turgambaeva, Asiya E. / Igumenov, Igor К. et al. | 2014
- 151
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Selective-area growth and magnetic characterization of lateral MnAs nanowiresKato, Hiroaki / Sakita, Shinya / Hara, Shinjiro et al. | 2014
- 156
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Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopyHospodková, Alice / Pangrác, Jiří / Vyskočil, Jan / Zíková, Markéta / Oswald, Jiří / Komninou, Philomela / Hulicius, Eduard et al. | 2014
- 161
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Preheating temperature and growth temperature dependence of InP nanowires grown by self-catalytic VLS mode on InP substrateOgino, T. / Yamauchi, M. / Yamamoto, Y. / Shimomura, K. / Waho, T. et al. | 2014
- 167
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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8µmZíková, Markéta / Hospodková, Alice / Pangrác, Jiří / Oswald, Jiří / Krčil, Pavel / Hulicius, Eduard / Komninou, Philomela / Kioseoglou, Joseph et al. | 2014
- 172
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Growth and properties of AIIIBV QD structures for intermediate band solar cellsVyskočil, J. / Gladkov, P. / Petříček, O. / Hospodková, A. / Pangrác, J. et al. | 2014
- 177
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Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrixMoiseev, K.D. / Romanov, V.V. / Dement׳ev, P.A. / Ivanov, E.V. et al. | 2014
- 181
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Zn-doping of GaAs nanowires grown by AerotaxyYang, Fangfang / Messing, Maria E. / Mergenthaler, Kilian / Ghasemi, Masoomeh / Johansson, Jonas / Wallenberg, L. Reine / Pistol, Mats-Erik / Deppert, Knut / Samuelson, Lars / Magnusson, Martin H. et al. | 2014
- 187
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Site-controlled InGaAs/GaAs pyramidal quantum dots grown by MOVPE on patterned substrates using triethylgalliumRigal, B. / Jarlov, C. / Rudra, A. / Gallo, P. / Lyasota, A. / Dwir, B. / Kapon, E. et al. | 2014
- 192
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Integration of multiple site-controlled pyramidal quantum dot systems with photonic-crystal membrane cavitiesLyasota, A. / Borghardt, S. / Jarlov, C. / Dwir, B. / Gallo, P. / Rudra, A. / Kapon, E. et al. | 2014
- 196
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Parabolic tailored-potential quantum-wires grown in inverted pyramidsLazarev, M. / Szeszko, J. / Rudra, A. / Karlsson, K.F. / Kapon, E. et al. | 2014
- 200
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The controlled growth of GaN microrods on Si(111) substrates by MOCVDFoltynski, Bartosz / Garro, Nuria / Vallo, Martin / Finken, Matthias / Giesen, Christoph / Kalisch, Holger / Vescan, Andrei / Cantarero, Andrés / Heuken, Michael et al. | 2014
- 205
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Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversionBugge, F. / Paschke, K. / Blume, G. / Feise, D. / Zeimer, U. / Weyers, M. et al. | 2014
- 210
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Fabrication and performance of 1.3-μm 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPEMereuta, A. / Sirbu, A. / Caliman, A. / Suruceanu, G. / Iakovlev, V. / Mickovic, Z. / Kapon, E. et al. | 2014
- 215
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Combined Mg/Zn p-type doping for AlGaInP laser diodesPohl, J. / Bugge, F. / Blume, G. / Knigge, A. / Knigge, S. / Erbert, G. / Weyers, M. et al. | 2014
- 219
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Comparison of AlGaInP-VECSEL gain structuresBaumgärtner, Stefan / Kahle, Hermann / Bek, Roman / Schwarzbäck, Thomas / Jetter, Michael / Michler, Peter et al. | 2014
- 223
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MOCVD for solar cells, a transition towards a chamberless inline processBarrioz, V. / Monir, S. / Kartopu, G. / Lamb, D.A. / Brooks, W. / Siderfin, P. / Jones, S. / Clayton, A.J. / Irvine, S.J.C. et al. | 2014
- 232
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Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devicesGamarra, Piero / Lacam, Cedric / Tordjman, Maurice / Splettstösser, Jörg / Schauwecker, Bernd / di Forte-Poisson, Marie-Antoinette et al. | 2014
- 237
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MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratioMa, Jun / Lu, Xing / Zhu, Xueliang / Huang, Tongde / Jiang, Huaxing / Xu, Peiqiang / Lau, Kei May et al. | 2014
- 243
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Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon dopingLiu, Chao / Liu, Zhaojun / Huang, Tongde / Ma, Jun / May Lau, Kei et al. | 2014
- 248
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Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substratesWośko, Mateusz / Paszkiewicz, Bogdan / Szymański, Tomasz / Paszkiewicz, Regina et al. | 2014
- 254
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AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPEYan, Jianchang / Wang, Junxi / Zhang, Yun / Cong, Peipei / Sun, Lili / Tian, Yingdong / Zhao, Chao / Li, Jinmin et al. | 2014
- 258
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Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layerChiu, C.H. / Lin, Y.W. / Tsai, M.T. / Lin, B.C. / Li, Z.Y. / Tu, P.M. / Huang, S.C. / Hsu, Earl / Uen, W.Y. / Lee, W.I. et al. | 2014
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Editorial Board| 2015