System ESD robustness by co-design of on-chip and on-board protection measures (Englisch)
- Neue Suche nach: Gossner, H.
- Neue Suche nach: Simbürger, W.
- Neue Suche nach: Stecher, M.
- Neue Suche nach: Gossner, H.
- Neue Suche nach: Simbürger, W.
- Neue Suche nach: Stecher, M.
In:
Microelectronics and Reliability
;
50
, 9-11
;
1359-1366
;
2010
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:System ESD robustness by co-design of on-chip and on-board protection measures
-
Beteiligte:
-
Erschienen in:Microelectronics and Reliability ; 50, 9-11 ; 1359-1366
-
Verlag:
- Neue Suche nach: Elsevier Ltd
-
Erscheinungsdatum:19.07.2010
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Format / Umfang:8 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 50, Ausgabe 9-11
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Contribution of calendar ageing modes in the performances degradation of supercapacitors during power cyclingBriat, O. / Vinassa, J.-M. / Bertrand, N. / El Brouji, H. / Delétage, J.-Y. / Woirgard, E. et al. | 2010
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Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional modeDupont, L. / Blanchard, J.L. / Lallemand, R. / Coquery, G. / Morelle, J.M. / Blondel, G. / Rouleau, B. et al. | 2010
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Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperatureTounsi, M. / Oukaour, A. / Tala-Ighil, B. / Gualous, H. / Boudart, B. / Aissani, D. et al. | 2010
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Experimental electro-mechanical static characterization of IGBT bare die under controlled temperatureBelmehdi, Yassine / Azzopardi, Stephane / Deletage, Jean-Yves / Woirgard, Eric et al. | 2010
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Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground levelAutran, J.L. / Munteanu, D. / Roche, P. / Gasiot, G. / Martinie, S. / Uznanski, S. / Sauze, S. / Semikh, S. / Yakushev, E. / Rozov, S. et al. | 2010
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Destructive events in NAND Flash memories irradiated with heavy ionsBagatin, M. / Gerardin, S. / Paccagnella, A. / Cellere, G. / Irom, F. / Nguyen, D.N. et al. | 2010
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Impact of total dose on heavy-ion upsets in floating gate arraysGerardin, S. / Bagatin, M. / Paccagnella, A. / Cellere, G. / Visconti, A. / Bonanomi, M. et al. | 2010
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Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFETBusatto, G. / Currò, G. / Iannuzzo, F. / Porzio, A. / Sanseverino, A. / Velardi, F. et al. | 2010
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Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stressMichalas, L. / Papaioannou, G.J. / Voutsas, A.T. et al. | 2010
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Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETsAlvarado, J. / Boufouss, E. / Kilchytska, V. / Flandre, D. et al. | 2010
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Radiation effects in nitride read-only memoriesLibertino, S. / Corso, D. / Murè, G. / Marino, A. / Palumbo, F. / Principato, F. / Cannella, G. / Schillaci, T. / Giarusso, S. / Celi, F. et al. | 2010
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Ambipolar field-effect transistor based on α,ω-dihexylquaterthiophene and α,ω-diperfluoroquaterthiophene vertical heterojunctionGenerali, Gianluca / Capelli, Raffaella / Toffanin, Stefano / Facchetti, Antonio / Muccini, Michele et al. | 2010
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Ambipolar field-effect transistor based on alpha,omega-dihexylquaterthiophene and alpha,omega-diperfluoroquaterthiophene vertical heterojunctionGenerali, Gianluca / Capelli, Raffaella / Toffanin, Stefano / Facchetti, Antonio / Muccini, Michele et al. | 2010
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Ambipolar field-effect transistor based on a,-dihexylquaterthiophene and a,-diperfluoroquaterthiophene vertical heterojunctionGenerali, G. / Capelli, R. / Toffanin, S. / Facchetti, A. / Muccini, M. et al. | 2010
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Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLEDCester, A. / Bari, D. / Framarin, J. / Wrachien, N. / Meneghesso, G. / Xia, S. / Adamovich, V. / Brown, J.J. et al. | 2010
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Humidity study of a-Si PV cellTan, Cher Ming / Chen, Boon Khai Eric / Toh, Kok Peng et al. | 2010
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Degradation mechanism analysis in temperature stress tests on III–V ultra-high concentrator solar cells using a 3D distributed modelEspinet, P. / Algora, C. / González, J.R. / Núnez, N. / Vázquez, M. et al. | 2010
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Novel accelerated testing method for III–V concentrator solar cellsNúñez, N. / Vázquez, M. / González, J.R. / Algora, C. / Espinet, P. et al. | 2010
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Mechanical and thermal reliability of printed organic thin-film transistorBoddaert, X. / Bensaid, B. / Benaben, P. / Gwoziecki, R. / Coppard, R. et al. | 2010
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Methods to improve reliability of bulge test technique to extract mechanical properties of thin filmsYoussef, H. / Ferrand, A. / Calmon, P. / Pons, P. / Plana, R. et al. | 2010
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Triple junction InGaP/InGaAs/Ge solar cells for high concentration photovoltaics application: Degradation tests of solar receiversPadovani, S. / Del Negro, A. / Antonipieri, M. / Sinesi, S. / Campesato, R. / Casale, M.C. / Gabetta, G. / Gori, G. et al. | 2010
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Extraction of local thin-film solar cell parameters by bias-dependent IR-LBICBoostandoost, M. / Kerst, U. / Boit, C. et al. | 2010
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Induced degradation on c-Si solar cells for concentration terrestrial applicationsLancellotti, Laura / Fucci, Raffaele / Romano, Antonio / Sarno, Angelo / Daliento, Santolo et al. | 2010
- IFC
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Inside front cover - Editorial board| 2010