Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing (Englisch)
- Neue Suche nach: Miyake, Hideto
- Neue Suche nach: Lin, Chia-Hung
- Neue Suche nach: Tokoro, Kenta
- Neue Suche nach: Hiramatsu, Kazumasa
- Neue Suche nach: Miyake, Hideto
- Neue Suche nach: Lin, Chia-Hung
- Neue Suche nach: Tokoro, Kenta
- Neue Suche nach: Hiramatsu, Kazumasa
In:
Journal of Crystal Growth
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456
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155-159
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2016
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
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Beteiligte:Miyake, Hideto ( Autor:in ) / Lin, Chia-Hung ( Autor:in ) / Tokoro, Kenta ( Autor:in ) / Hiramatsu, Kazumasa ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 456 ; 155-159
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Verlag:
- Neue Suche nach: The Authors
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Erscheinungsdatum:01.01.2016
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 456
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- 1
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Preface: Bulk nitride workshop 2015Freitas, Jaime A. Jr. / Pasova, Tania / Bockowski, Michal / Fujioka, Hiroshi et al. | 2016
- 2
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Ammonothermal synthesis of GaN using Ba(NH2)2 as mineralizerHertrampf, J. / Alt, N.S.A. / Schlücker, E. / Knetzger, M. / Meissner, E. / Niewa, R. et al. | 2016
- 5
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On the solubility of gallium nitride in supercritical ammonia–sodium solutionsGriffiths, Steven / Pimputkar, Siddha / Speck, James S. / Nakamura, Shuji et al. | 2016
- 15
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Basic ammonothermal GaN growth in molybdenum capsulesPimputkar, S. / Speck, J.S. / Nakamura, S. et al. | 2016
- 21
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Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclaveMalkowski, Thomas F. / Pimputkar, Siddha / Speck, James S. / DenBaars, Steven P. / Nakamura, Shuji et al. | 2016
- 27
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Reduction of crack density in ammonothermal bulk GaN growthLetts, Edward / Key, Daryl / Hashimoto, Tadao et al. | 2016
- 33
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Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitridesSchimmel, Saskia / Künecke, Ulrike / Meisel, Magnus / Hertweck, Benjamin / Steigerwald, Thomas G. / Nebel, Christoph / Alt, Nicolas S.A. / Schlücker, Eberhard / Wellmann, Peter et al. | 2016
- 43
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Incorporation and effects of impurities in different growth zones within basic ammonothermal GaNSintonen, Sakari / Kivisaari, Pyry / Pimputkar, Siddha / Suihkonen, Sami / Schulz, Tobias / Speck, James S. / Nakamura, Shuji et al. | 2016
- 51
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Evolution of impurity incorporation during ammonothermal growth of GaNSintonen, Sakari / Wahl, Stefanie / Richter, Susanne / Meyer, Sylke / Suihkonen, Sami / Schulz, Tobias / Irmscher, Klaus / Danilewsky, Andreas N. / Tuomi, Turkka O. / Stankiewicz, Romuald et al. | 2016
- 58
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A new system for sodium flux growth of bulk GaN. Part I: System developmentVon Dollen, Paul / Pimputkar, Siddha / Alreesh, Mohammed Abo / Albrithen, Hamad / Suihkonen, Sami / Nakamura, Shuji / Speck, James S. et al. | 2016
- 67
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A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processesVon Dollen, Paul / Pimputkar, Siddha / Alreesh, Mohammed Abo / Nakamura, Shuji / Speck, James S. et al. | 2016
- 73
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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™Iwinska, M. / Amilusik, M. / Fijalkowski, M. / Sochacki, T. / Lucznik, B. / Grzanka, E. / Litwin-Staszewska, E. / Weyher, J.L. / Nowakowska-Siwinska, A. / Muziol, G. et al. | 2016
- 80
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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substratesDomagala, J.Z. / Smalc-Koziorowska, J. / Iwinska, M. / Sochacki, T. / Amilusik, M. / Lucznik, B. / Fijalkowski, M. / Kamler, G. / Grzegory, I. / Kucharski, R. et al. | 2016
- 86
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Growth of HVPE-GaN on native seeds – numerical simulation based on experimental resultsLucznik, B. / Iwinska, M. / Sochacki, T. / Amilusik, M. / Fijalkowski, M. / Grzegory, I. / Bockowski, M. et al. | 2016
- 91
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Homoepitaxial growth of HVPE-GaN doped with SiIwinska, M. / Sochacki, T. / Amilusik, M. / Kempisty, P. / Lucznik, B. / Fijalkowski, M. / Litwin-Staszewska, E. / Smalc-Koziorowska, J. / Khapuridze, A. / Staszczak, G. et al. | 2016
- 97
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Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitrideRichter, E. / Gridneva, E. / Weyers, M. / Tränkle, G. et al. | 2016
- 101
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Incorporation of pervasive impurities on HVPE GaN growth directionsFreitas, J.A. Jr. / Culbertson, J.C. / Mahadik, N.A. / Glaser, E.R. / Sochacki, T. / Bockowski, M. / Lee, S.K. / Shim, K.B. et al. | 2016
- 108
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Chemical etching behavior of non-polar GaN sidewallsJung, Younghun / Jang, Soohwan / Baik, Kwang Hyeon / Kim, Hong-Yeol / Kim, Jihyun et al. | 2016
- 113
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HVPE GaN wafers with improved crystalline and electrical propertiesFreitas, J.A. Jr. / Culbertson, J.C. / Mahadik, N.A. / Sochacki, T. / Iwinska, M. / Bockowski, M.S. et al. | 2016
- 121
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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substratesStorm, D.F. / Hardy, M.T. / Katzer, D.S. / Nepal, N. / Downey, B.P. / Meyer, D.J. / McConkie, Thomas O. / Zhou, Lin / Smith, David J. et al. | 2016
- 133
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Progress in periodically oriented III-nitride materialsHite, Jennifer et al. | 2016
- 137
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Study of carbon concentration in GaN grown by metalorganic chemical vapor depositionPiao, Guanxi / Ikenaga, Kazutada / Yano, Yoshiki / Tokunaga, Hiroki / Mishima, Akira / Ban, Yuzaburo / Tabuchi, Toshiya / Matsumoto, Koh et al. | 2016
- 140
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Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursorMurakami, Hisashi / Takekawa, Nao / Shiono, Anna / Thieu, Quang Tu / Togashi, Rie / Kumagai, Yoshinao / Matsumoto, Koh / Koukitu, Akinori et al. | 2016
- 145
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Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxyHirasaki, Takahide / Eriksson, Martin / Thieu, Quang Tu / Karlsson, Fredrik / Murakami, Hisashi / Kumagai, Yoshinao / Monemar, Bo / Holtz, Per Olof / Koukitu, Akinori et al. | 2016
- 145
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Growth of thick and high crystalline quality InGaN layers on GaN (000(1)over-bar) substrate using tri-halide vapor phase epitaxyHirasaki, Takahide et al. | 2016
- 151
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Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma sourceNovikov, S.V. / Staddon, C.R. / Sahonta, S.-L. / Oliver, R.A. / Humphreys, C.J. / Foxon, C.T. et al. | 2016
- 155
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Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealingMiyake, Hideto / Lin, Chia-Hung / Tokoro, Kenta / Hiramatsu, Kazumasa et al. | 2016
- 160
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The importance of structural inhomogeneity in GaN thin filmsLiliental-Weber, Z. / Reis, Roberto dos / Weyher, Jan L. / Staszczak, Grzegorz / Jakieła, Rafał et al. | 2016
- 168
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Investigation of oxygen defects in wurtzite InN by using density functional theoryHattori, Y. / Chubaci, J.F.D. / Matsuoka, M. / Freitas, J.A. Jr. / da Silva, A. Ferreira et al. | 2016
- IFC
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Editorial Board| 2016