Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBE (Englisch)
- Neue Suche nach: Furuta, K.
- Neue Suche nach: Nakamura, N.
- Neue Suche nach: Shen, X.Q.
- Neue Suche nach: Shimizu, M.
- Neue Suche nach: Kitamura, T.
- Neue Suche nach: Nakamura, K.
- Neue Suche nach: Okumura, H.
- Neue Suche nach: Furuta, K.
- Neue Suche nach: Nakamura, N.
- Neue Suche nach: Shen, X.Q.
- Neue Suche nach: Shimizu, M.
- Neue Suche nach: Kitamura, T.
- Neue Suche nach: Nakamura, K.
- Neue Suche nach: Okumura, H.
In:
Journal of Crystal Growth
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301-302
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437-441
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2007
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBE
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Beteiligte:Furuta, K. ( Autor:in ) / Nakamura, N. ( Autor:in ) / Shen, X.Q. ( Autor:in ) / Shimizu, M. ( Autor:in ) / Kitamura, T. ( Autor:in ) / Nakamura, K. ( Autor:in ) / Okumura, H. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 301-302 ; 437-441
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2007
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 301-302
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Preface| 2007
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Recent progress in nanostructure fabrication using MBEPloog, Klaus H. et al. | 2006
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Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffractionTakahasi, M. / Mizuki, J. et al. | 2006
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Structure transition between two GaAs(001)-c(4x4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2007
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Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning methodIsomura, N. / Tsukamoto, S. / Iizuka, K. / Arakawa, Y. et al. | 2006
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Growth simulation of fish-like pit pattern on GaAs(110)Ishii, A. / Oda, Y. et al. | 2007
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Atomically controlled doping of nitrogen on GaAs(001) surfacesShimizu, N. / Inoue, T. / Kita, T. / Wada, O. et al. | 2006
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Substrate temperature measurement using a commercial band-edge detection systemFarrer, I. / Harris, J.J. / Thomson, R. / Barlett, D. / Taylor, C.A. / Ritchie, D.A. et al. | 2007
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MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelengthFujiwara, A. / Krishnamurthy, D. / Matsumoto, T. / Hasegawa, S. / Asahi, H. et al. | 2006
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Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAsGerl, C. / Bauer, J. / Wegscheider, W. et al. | 2006
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A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxySuda, J. / Horita, M. / Armitage, R. / Kimoto, T. et al. | 2007
- 414
-
Be and Mg co-doping in GaNKawaharazuka, A. / Tanimoto, T. / Nagai, K. / Tanaka, Y. / Horikoshi, Y. et al. | 2006
- 417
-
MBE growth of GaN using 15N isotope for nuclear magnetic resonance applicationsNovikov, S.V. / Morris, R.D. / Kent, A.J. / Geen, H.L. / Foxon, C.T. et al. | 2006
- 420
-
Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxySawahata, Junji / Seo, Jongwon / Takiguchi, Mikio / Saito, Daisuke / Nemoto, Shinya / Akimoto, Katsuhiro et al. | 2006
- 424
-
Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE techniqueHonda, Tohru / Egawa, Shinichi / Sugimoto, Koichi / Arai, Masatoshi et al. | 2007
- 429
-
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterizationStorm, D.F. / Katzer, D.S. / Roussos, J.A. / Mittereder, J.A. / Bass, R. / Binari, S.C. / Hanser, D. / Preble, E.A. / Evans, K.R. et al. | 2006
- 434
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Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBECordier, Y. / Semond, F. / Massies, J. / Leroux, M. / Lorenzini, P. / Chaix, C. et al. | 2007
- 437
-
Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBEFuruta, K. / Nakamura, N. / Shen, X.Q. / Shimizu, M. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2007
- 442
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GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBETang, H. / Bardwell, J.A. / Lapointe, J. / Raymond, S. / Fraser, J. / Haffouz, S. / Rolfe, S. et al. | 2007
- 447
-
Fabrication of lateral lattice-polarity-inverted GaN heterostructureKatayama, Ryuji / Kuge, Yoshihiro / Kondo, Takashi / Onabe, Kentaro et al. | 2006
- 452
-
Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substratesNakamura, N. / Furuta, K. / Shen, X.Q. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2006
- 457
-
Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxyLiu, X.Y. / Aggerstam, T. / Jänes, P. / Holmström, P. / Lourdudoss, S. / Thylén, L. / Andersson, T.G. et al. | 2007
- 461
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Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxyIwata, Shiro / Nanjo, Yoshiyuki / Okuno, Toshihiro / Kurai, Satoshi / Taguchi, Tsunemasa et al. | 2006
- 465
-
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650nm rangeIvanov, Sergey V. / Jmerik, Valentin N. / Shubina, Tatiana V. / Listoshin, Svyatoslav B. / Mizerov, Andrey M. / Sitnikova, Alla A. / Kim, Min-Ho / Koike, Masayoshi / Kim, Bum-Joon / Kop’ev, Pyotr S. et al. | 2006
- 469
-
Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templatesJmerik, V.N. / Mizerov, A.M. / Shubina, T.V. / Yagovkina, M. / Listoshin, V.B. / Sitnikova, A.A. / Ivanov, S.V. / Kim, M.-H. / Koike, M. / Kim, B.-J. et al. | 2006
- 473
-
Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBEKomaki, Hironori / Nakamura, Teruyuki / Katayama, Ryuji / Onabe, Kentaro / Ozeki, Masashi / Ikari, Tetsuo et al. | 2006
- 478
-
MBE growth of GaN on MgO substrateSuzuki, Ryotaro / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2006
- 482
-
Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAsFoxon, C.T. / Campion, R.P. / Grant, V.A. / Novikov, S.V. / Harris, J.J. / Thomson, R. / Taylor, C. / Barlett, D. et al. | 2007
- 486
-
Fabrication of GaN dot structure by droplet epitaxy using NH3Maruyama, Takahiro / Otsubo, Hiroaki / Kondo, Toshiyuki / Yamamoto, Yo / Naritsuka, Shigeya et al. | 2006
- 490
-
Growth of InN nanocolumns by RF-MBENishikawa, S. / Nakao, Y. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2007
- 496
-
In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxyWang, Xinqiang / Che, Song-Bek / Ishitani, Yoshihiro / Yoshikawa, Akihiko et al. | 2006
- 500
-
A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growthHashimoto, A. / Iwao, K. / Isamoto, K. / Yamamoto, A. et al. | 2006
- 504
-
Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxyYodo, Tokuo / Shimada, Teruya / Tagawa, Sumito / Harada, Yoshiyuki et al. | 2007
- 508
-
RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substratesNakamura, T. / Tokumoto, Y. / Katayama, R. / Yamamoto, T. / Onabe, K. et al. | 2006
- 513
-
RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substratesHirano, S. / Inoue, T. / Shikata, G. / Orihara, M. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2006
- 517
-
RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayerShikata, G. / Hirano, S. / Inoue, T. / Orihara, M. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2006
- 521
-
The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxyYao, Yongzhao / Sekiguchi, Takashi / Sakuma, Yoshiki / Ohashi, Naoki et al. | 2007
- 525
-
All-GaInNAs ultrafast lasers: Material development for emitters and absorbersRutz, A. / Liverini, V. / Müller, E. / Schön, S. / Keller, U. et al. | 2007
- 529
-
Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of Formula Not Shown (Ga,In)(N,As) multiple quantum wellsIshikawa, F. / Trampert, A. / Ploog, K. H. et al. | 2007
- 529
-
Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wellsIshikawa, Fumitaro / Trampert, Achim / Ploog, Klaus H. et al. | 2006
- 534
-
TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientationKrishnamurthy, D. / Matsumoto, T. / Fujiwara, A. / Hasegawa, S. / Asahi, H. et al. | 2006
- 539
-
Band alignments of InGaPN/GaPN quantum well structures on GaP and SiUmeno, Kazuyuki / Kim, Sung Man / Furukawa, Yuzo / Yonezu, Hiroo / Wakahara, Akihiro et al. | 2006
- 545
-
Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasersKasai, J. / Kitatani, T. / Adachi, K. / Nakahara, K. / Aoki, M. et al. | 2007
- 548
-
Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxyLiu, H.F. / Xiang, N. / Zhou, H.L. / Chua, S.J. / Yang, P. / Moser, H.O. et al. | 2007
- 552
-
Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substratesIbáñez, J. / Henini, M. / Kudrawiec, R. / Misiewicz, J. / Schmidbauer, M. / Hopkinson, M. et al. | 2006
- 556
-
Nitrogen-dependent effects on GaInNAs photoluminescence upon annealingLiverini, V. / Rutz, A. / Keller, U. / Schön, S. et al. | 2007
- 560
-
Effect of residual hydrogen and temperature on initial growth stages and properties of GaAs1−xNxFotkatzikis, A. / Freundlich, A. et al. | 2007
- 565
-
Study of optical properties of GaAsN layers prepared by molecular beam epitaxyPulzara-Mora, A. / Cruz-Hernández, E. / Rojas-Ramirez, J. / Contreras-Guerrero, R. / Meléndez-Lira, M. / Falcony-Guajardo, C. / Aguilar-Frutis, M.A. / López-López, M. et al. | 2007
- 570
-
Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasersRutz, A. / Liverini, V. / Grange, R. / Haiml, M. / Schön, S. / Keller, U. et al. | 2007
- 575
-
Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimonyMiura, K. / Nagai, Y. / Iguchi, Y. / Okada, H. / Kawamura, Y. et al. | 2006
- 579
-
Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBEShimizu, Yukiko / Miyashita, Naoya / Mura, Yusuke / Uedono, Akira / Okada, Yoshitaka et al. | 2006
- 583
-
GaNAs/GaAs multiple quantum well grown by modulated N radical beam sequence of RF-MBE: Effect of growth interruptionFujii, Kensuke / Takao, Katsuhiro / Kumamoto, Tsuneaki / Kakino, Masayoshi / Tsurumachi, Noriaki / Miyagawa, Hayato / Ueji, Rintaro / Itoh, Hiroshi / Nakanishi, Shunsuke / Akiyama, Hidefumi et al. | 2007
- 588
-
Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructuresHsu, Y.L. / Lee, Y.J. / Chang, Y.H. / Huang, M.L. / Chiu, Y.N. / Ho, C.C. / Chang, P. / Hsu, C.H. / Hong, M. / Kwo, J. et al. | 2006
- 592
-
Growth, interface structure and magnetic properties of Heusler alloy Co2FeSi/GaAs(001) hybrid structuresHashimoto, M. / Herfort, J. / Trampert, A. / Ploog, K.H. et al. | 2006
- 597
-
Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxyYamaguchi, K. / Yui, T. / Yamaki, K. / Kakeya, I. / Kadowaki, K. / Suemasu, T. et al. | 2006
- 602
-
Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laserHolub, M. / Bhattacharya, P. / Shin, J. / Saha, D. et al. | 2006
- 607
-
Epitaxial growth of bcc Mn films on 4H-SiC(0001) by molecular beam epitaxyWang, Wenhong / Takano, Fumiyoshi / Ofuchi, Hironori / Akinaga, Hiro et al. | 2006
- 611
-
Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Post-growth annealing and transport characteristicsSugiura, K. / Nakane, R. / Sugahara, S. / Tanaka, M. et al. | 2006
- 615
-
Molecular beam epitaxy growth, magnetic and structural properties of MnAs thin films grown on InP(001) and InGaAsPYokoyama, M. / Ohya, S. / Tanaka, M. et al. | 2006
- 619
-
Formation and properties of MnAs magnetic nanoscaled dots on sulfur-passivated semiconductor substratesKubo, K. / Kanai, K. / Okabayashi, J. / Oshima, M. / Ofuchi, H. et al. | 2006
- 623
-
Preparation of high-TC ferromagnetic (In,Mn)As with strongly As-rich conditionsSchallenberg, T. / Munekata, H. et al. | 2006
- 627
-
Fabrication, structural and magnetic properties of InAlMnAs and InAlAs:MnAs granular thin filmsYokoyama, M. / Ohya, S. / Tanaka, M. et al. | 2007
- 631
-
Theoretical study of alloy phase stability in zincblende Ga1−xMnxAsHatano, Keishi / Nakamura, Kohji / Akiyama, Toru / Ito, Tomonori et al. | 2006
- 634
-
Enhanced magnetization by modulated Mn delta doping in GaAsYanagisawa, Kohei / Takeuchi, Suguru / Yoshitake, Hirosi / Onomitsu, Koji / Horikoshi, Yosizi et al. | 2007
- 638
-
Epitaxial GaMnAs layers and nanostructures with anisotropy in structural and magnetic propertiesWenisch, J. / Ebel, L. / Gould, C. / Schmidt, G. / Molenkamp, L.W. / Brunner, K. et al. | 2007
- 642
-
Molecular beam epitaxy and magnetic properties of GaMnNAsKobayashi, Genki / Mori, Takahiro / Kato, Takashi / Hanada, Takashi / Makino, Hisao / Yao, Takafumi et al. | 2006
- 647
-
Epitaxial growth and magnetic properties of GaMnNAsManago, T. / Sinsarp, A. / Kawaguchi, K. / Akinaga, H. et al. | 2006
- 651
-
Growth and characterization of ferromagnetic cubic GaCrN: Structural and magnetic propertiesKimura, S. / Emura, S. / Ofuchi, H. / Zhou, Y.K. / Hasegawa, S. / Asahi, H. et al. | 2006
- 656
-
MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP substratesAsubar, J.T. / Kato, A. / Kambayashi, T. / Nakamura, S. / Jinbo, Y. / Uchitomi, N. et al. | 2007
- 662
-
Existence of localized spins in pair delta-doped GaAs structuresNoh, J.P. / Idutsu, Y. / Otsuka, N. et al. | 2007
- 666
-
Percolation transition via quantum point contacts in Be delta-doped GaAs structures grown by molecular beam epitaxyShimogishi, F. / Noh, J.P. / Idutsu, Y. / Otsuka, N. et al. | 2007
- 671
-
The coherent {100} and {110} interfaces between rocksalt-PbTe and zincblende-CdTeGroiss, H. / Heiss, W. / Schäffler, F. / Leitsmann, R. / Bechstedt, F. / Koike, K. / Harada, H. / Yano, M. et al. | 2006
- 676
-
Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxyMurase, S. / Sunohara, T. / Suemasu, T. et al. | 2006
- 676
-
Epitaxial growth and luminescence characterization of Si/b-FeSi2/Si multilayered structures by molecular beam epitaxyMurase, S. / Sunohara, T. / Suemasu, T. et al. | 2007
- 680
-
Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1−xSrxSi2 for photovoltaic applicationSuemasu, T. / Morita, K. / Kobayashi, M. et al. | 2006
- 684
-
Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxyShibata, H. / Karimoto, S. / Tsukada, A. / Makimoto, T. et al. | 2006
- 687
-
Characteristics of multivalent impurity doped C60 films grown by MBENishinaga, Jiro / Aihara, Tomoyuki / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2007
- 692
-
Kinetic model of intermixing during self-assembled InAs quantum dot formationHeyn, Ch. / Schramm, A. / Kipp, T. / Hansen, W. et al. | 2006
- 697
-
MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surfaceAkiyama, Y. / Sakaki, H. et al. | 2006
- 701
-
Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substratesSelcuk, E. / Lippen, T.v. / Hamhuis, G.J. / Nötzel, R. et al. | 2006
- 705
-
Initial stages of self-assembled InAs/InP(001) quantum wire formationFuster, David / Alén, Benito / González, Luisa / González, Yolanda / Martínez-Pastor, Juan et al. | 2006
- 709
-
Emission-wavelength extension of nitrided InAs/GaAs quantum dots with different sizesMizuno, H. / Inoue, T. / Kikuno, M. / Kita, T. / Wada, O. / Mori, H. / Yasuda, H. et al. | 2006
- 713
-
High-density InSb-based quantum dots emitting in the mid-infraredTasco, V. / Deguffroy, N. / Baranov, A.N. / Tournié, E. / Satpati, B. / Trampert, A. / Dunaevski, M. / Titkov, A. et al. | 2006
- 718
-
Amplified spontaneous emission from GaSb quantum dots in Si grown by MBEYasuhara, N. / Jo, M. / Sugawara, Y. / Kawamoto, K. / Fukatsu, S. et al. | 2007
- 722
-
Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxyKoike, Kazuto / Harada, Hisashi / Itakura, Tomoyuki / Yano, Mitsuaki / Heiss, Wolfgang / Groiss, Heiko / Kaufmann, Erich / Hesser, Gunter / Schäffler, Friedrich et al. | 2006
- 726
-
Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe methodOhkouchi, S. / Sugimoto, Y. / Ozaki, N. / Ishikawa, H. / Asakawa, K. et al. | 2006
- 731
-
Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structuresShibata, K. / Jung, M. / Hirakawa, K. / Machida, T. / Ishida, S. / Arakawa, Y. / Sakaki, H. et al. | 2006
- 735
-
Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxySuraprapapich, S. / Shen, Y.M. / Odnoblyudov, V.A. / Fainman, Y. / Panyakeow, S. / Tu, C.W. et al. | 2006
- 740
-
Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical propertiesMano, T. / Kuroda, T. / Mitsuishi, K. / Yamagiwa, M. / Guo, X.-J. / Furuya, K. / Sakoda, K. / Koguchi, N. et al. | 2007
- 744
-
Selective growth of ordered InGaAs quantum dots on patterned substrates with nano-hole arraysOhkouchi, S. / Nakamura, Y. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. et al. | 2006
- 748
-
Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAsSchramm, A. / Schaefer, J. / Kipp, T. / Heyn, Ch. / Hansen, W. et al. | 2006
- 751
-
Fabrication of ultra-low density and long-wavelength emission InAs quantum dotsHuang, Shesong / Niu, Zhichuan / Ni, Haiqiao / Xiong, Yonghua / Zhan, Feng / Fang, Zhidan / Xia, Jianbai et al. | 2007
- 755
-
Fabrication of high-quality CdSe quantum dots for green laser diodes by molecular beam epitaxyOhkuno, Koji / Oku, Hironao / Araki, Yuji / Nagata, Naohiro / Saraie, Junji et al. | 2006
- 759
-
Lateral self-arrangement of self-assembled InAs quantum dots by an intentional-induced dislocation networkWelsch, H. / Kipp, T. / Heyn, Ch. / Hansen, W. et al. | 2006
- 762
-
InAs quantum dots array grown with an As2 source on non-planar GaAs substratesSugaya, T. / Morohashi, I. / Komori, K. / Amano, T. et al. | 2006
- 766
-
Dosage dependence of Ge quantum dots grown on carbon-implanted Si substratesOgawa, Masaaki / Cha, Dong-ho / Lee, Joo-young / Wang, Kang L. et al. | 2007
- 771
-
Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devicesOzaki, N. / Takata, Y. / Ohkouchi, S. / Sugimoto, Y. / Nakamura, Y. / Ikeda, N. / Asakawa, K. et al. | 2006
- 776
-
Optical properties of stacked InAs self-organized quantum dots on InP (311)BOshima, Ryuji / Akahane, Kouichi / Tsuchiya, Masahiro / Shigekawa, Hidemi / Okada, Yoshitaka et al. | 2006
- 781
-
Growth and magneto-optical properties of CdSe/ZnMnSe self-assembled quantum dotsLee, Sanghoon / Dobrowolska, M. / Furdyna, J.K. et al. | 2007
- 785
-
Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dotsKashiwada, Saori / Matsuda, Takashi / Yoh, Kanji et al. | 2006
- 789
-
Investigation of CdSe quantum dots in MgS barriers as active region in light emitting diodesGust, A. / Kruse, C. / Hommel, D. et al. | 2007
- 793
-
Effect of strain anisotropies on RHEED patterns of quantum dotsFeltrin, A. / Freundlich, A. et al. | 2007
- 797
-
High-temperature growth of Mn-irradiated InAs quantum dotsNagahara, Seiji / Tsukamoto, Shiro / Arakawa, Yasuhiko et al. | 2006
- 801
-
InGaAs quantum dots grown with As4 and As2 sources using molecular beam epitaxySugaya, T. / Furue, S. / Amano, T. / Komori, K. et al. | 2006
- 805
-
Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxyKumagai, N. / Watanabe, K. / Nakata, Y. / Arakawa, Y. et al. | 2006
- 809
-
Green light emitting diodes with CdSe quantum dotsAraki, Yuji / Ohkuno, Koji / Furukawa, Takeshi / Saraie, Junji et al. | 2006
- 812
-
Evolution of self-assembled lateral quantum dot moleculesSiripitakchai, N. / Suraprapapich, S. / Thainoi, S. / Kanjanachuchai, S. / Panyakeow, S. et al. | 2007
- 817
-
Temperature-insensitive detectivity of 5-pair InAs/GaAs quantum-dot infrared photodetectors with asymmetric device structureChou, Shu-Ting / Chen, Shang-Fu / Lin, Shih-Yen / Wu, Meng-Chyi / Wang, Jing-Mei et al. | 2007
- 821
-
MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layersHashimoto, Takayuki / Oshima, Ryuji / Shigekawa, Hidemi / Okada, Yoshitaka et al. | 2006
- 825
-
AlAs coating for stacked structure of self-assembled InAs/GaAs quantum dotsYokota, H. / Iizuka, K. / Okamoto, H. / Suzuki, T. et al. | 2007
- 828
-
Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dotsJiang, Chao / Kawazu, Takuya / Kobayashi, Shigeki / Sakaki, Hiroyuki et al. | 2006
- 833
-
Intersubband absorption in p-type Si1−xGex quantum dots on pre-patterned Si substrates made by a diblock copolymer processCha, Dongho / Ogawa, Masaaki / Chen, Christopher / Kim, Seongku / Lee, Jooyoung / Wang, Kang L. / Wang, Jiayu / Russell, Thomas P. et al. | 2006
- 837
-
An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)Joe, Hidenori / Akiyama, Toru / Nakamura, Kohji / Kanisawa, Kiyoshi / Ito, Tomonori et al. | 2007
- 841
-
The influence of InAs coverage on the performances self-assembled InGaAs quantum ringsHuang, Chun-Yuan / Wu, Meng-Chyi / Lin, Shih-Yen / Dai, Jong-Horng / Lee, Si-Chen et al. | 2007
- 846
-
Site control of very low density InAs QDs on patterned GaAs nano-wire surfacesUeta, Akio / Akahane, Kouichi / Gozu, Sinichiro / Yamamoto, Naokatsu / Ohtani, Naoki / Tsuchiya, Masahiro et al. | 2006
- 849
-
Closely stacking growth of highly uniform InAs quantum dots on self-formed GaAs nanoholesTsukiji, Nobukazu / Yamaguchi, Koichi et al. | 2006
- 853
-
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperatureHarmand, J.C. / Tchernycheva, M. / Patriarche, G. / Travers, L. / Glas, F. / Cirlin, G. et al. | 2006
- 857
-
Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substratesTamai, Isao / Hasegawa, Hideki et al. | 2006
- 862
-
A Monte-Carlo simulation study of twinning formation in InP nanowiresSano, Kosuke / Akiyama, Toru / Nakamura, Kohji / Ito, Tomonori et al. | 2007
- 866
-
Growth temperature dependence of MBE-grown ZnSe NanowiresChan, S.K. / Cai, Y. / Wang, N. / Sou, I.K. et al. | 2006
- 871
-
Orientation and size dependence on structural stability in silicon nanowires: A transferable tight-binding calculation studyMaeda, S. / Akiyama, T. / Nakamura, K. / Ito, T. et al. | 2006
- 876
-
Formation of patterned Ga InAs/GaAs hetero-structures using amorphous arsenic maskNoritake, Y. / Yamada, T. / Tabuchi, M. / Takeda, Y. et al. | 2006
- 880
-
Structure of GaSb/GaAs(001) surface using the first principles calculationIshii, A. / Fujiwara, K. / Tsukamoto, S. / Kakuda, N. / Yamaguchi, K. / Arakawa, Y. et al. | 2007
- 884
-
Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopyCruz-Hernández, E. / Pulzara-Mora, A. / Rojas-Ramirez, J. / Contreras-Guerrero, R. / Vazquez, D. / Rodriguez, A.G. / Méndez-García, V.H. / López-López, M. et al. | 2006
- 889
-
Interface analysis of InAs/GaSb superlattice grown by MBESatpati, B. / Rodriguez, J.B. / Trampert, A. / Tournié, E. / Joullié, A. / Christol, P. et al. | 2007
- 893
-
Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasersManz, C. / Yang, Q. / Kirste, L. / Köhler, K. et al. | 2006
- 897
-
Piezoresistance of suspended InAs/AlGaSb heterostructure nanobeamYamazaki, Kenji / Etaki, Samir / van der Zant, Herre S.J. / Yamaguchi, Hiroshi et al. | 2006
- 902
-
Ultra-low-frequency photocurrent self-oscillation in strained InxGa1−xAs quantum well diodesTanigawa, K. / Fujiwara, K. / Sano, N. et al. | 2006
- 906
-
Enhancement of magnetic field in superconductor and magnetic semiconductor quantum well hybrid structureLee, Sanghoon / Shin, D.Y. / Hyun, E.K. / Lee, S.-R. / Dobrowolska, M. / Furdyna, J.K. et al. | 2007
- 910
-
g-factor of two-dimensional electrons in selectively doped n-AlGaAs/GaAs heterojunctions with embedded InGaAs quantum dotsKawazu, Takuya / Sakaki, Hiroyuki et al. | 2006
- 914
-
MBE-grown metamorphic lasers for applications at telecom wavelengthsLedentsov, N.N. / Shchukin, V.A. / Kettler, T. / Posilovic, K. / Bimberg, D. / Karachinsky, L.Ya. / Gladyshev, A.Yu. / Maximov, M.V. / Novikov, I.I. / Shernyakov, Yu.M. et al. | 2006
- 923
-
Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAsMi, Z. / Yang, J. / Bhattacharya, P. et al. | 2006
- 923
-
Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45mm metamorphic InAs quantum dot lasers on GaAsMi, Z. / Yang, J. / Bhattacharya, P. et al. | 2007
- 927
-
Room temperature, low-threshold distributed feedback quantum cascade lasers at 8.4 and 7.7mmXu, G. / Wei, L. / Li, Y. / Li, A. / Lin, C. / Zhang, Y. / Li, H. et al. | 2007
- 927
-
Room temperature, low-threshold distributed feedback quantum cascade lasers at ∼8.4 and ∼7.7μmXu, Gangyi / Wei, Lin / Li, Yaoyao / Li, Aizhen / Lin, Chun / Zhang, Yonggang / Li, Hua et al. | 2007
- 931
-
High-power, narrow-ridge, mid-infrared interband cascade lasersCanedy, C.L. / Kim, C.S. / Kim, M. / Larrabee, D.C. / Nolde, J.A. / Bewley, W.W. / Vurgaftman, I. / Meyer, J.R. et al. | 2006
- 935
-
Tuning the emission frequency of a 2THz quantum cascade laser by altering the total thickness of the structureBeere, H.E. / Worrall, C.H. / Whelan, S. / Ritchie, D.A. / Alton, J. / Barbieri, S. / Sirtori, C. et al. | 2006
- 941
-
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3mmBoehm, G. / Grau, M. / Dier, O. / Windhorn, K. / Roenneberg, E. / Rosskopf, J. / Shau, R. / Meyer, R. / Ortsiefer, M. / Amann, M. C. et al. | 2007
- 941
-
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μmBoehm, Gerhard / Grau, Markus / Dier, Oliver / Windhorn, Kirsten / Roenneberg, Enno / Rosskopf, Juergen / Shau, Robert / Meyer, Ralf / Ortsiefer, Markus / Amann, Markus-Christian et al. | 2006
- 945
-
MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter sectionBlokhin, S.A. / Karachinsky, L.Ya. / Novikov, I.I. / Kuznetsov, S.M. / Gordeev, N.Yu. / Shernyakov, Y.M. / Savelyev, A.V. / Maximov, M.V. / Mutig, A. / Hopfer, F. et al. | 2007
- 951
-
MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devicesAkazawa, Masamichi / Hasegawa, Hideki et al. | 2006
- 955
-
Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinementGozu, Shin-ichiro / Akahane, Kouichi / Yamamoto, Naokatsu / Ueta, Akio / Ohtani, Naoki / Tsuchiya, Masahiro et al. | 2006
- 959
-
Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAsLi, L.H. / Rossetti, M. / Patriarche, G. / Fiore, A. et al. | 2006
- 963
-
Properties of InAsSbN quantum well laser diodes operating at 2μm wavelength region grown on InP substratesKawamura, Yuichi / Inoue, Naohisa et al. | 2007
- 963
-
Properties of InAsSbN quantum well laser diodes operating at 2mm wavelength region grown on InP substratesKawamura, Y. / Inoue, N. et al. | 2007
- 967
-
Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93mmCerutti, L. / Boissier, G. / Grech, P. / Perona, A. / Angellier, J. / Rouillard, Y. / Tournie, E. / Genty, F. / Dente, G. C. / Kaspi, R. et al. | 2007
- 967
-
Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μmCerutti, L. / Boissier, G. / Grech, P. / Perona, A. / Angellier, J. / Rouillard, Y. / Tournié, E. / Genty, F. / Dente, G.C. / Kaspi, R. et al. | 2006
- 971
-
Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxyTångring, I. / Wang, S.M. / Sadeghi, M. / Larsson, A. / Wang, X.D. et al. | 2006
- 971
-
Metamorphic growth of 1.25-1.29mm InGaAs quantum well lasers on GaAs by molecular beam epitaxyTangring, I. / Wang, S. M. / Sadeghi, M. / Larsson, A. / Wang, X. D. et al. | 2007
- 975
-
Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emissionYoshimoto, Masahiro / Huang, Wei / Feng, Gan / Tanaka, Yoshinori / Oe, Kunishige et al. | 2006
- 979
-
Application of rapid thermal annealing on 1.3–1.55μm GaInNAs(Sb) lasers grown by molecular beam epitaxyZhao, H. / Xu, Y.Q. / Ni, H.Q. / Zhang, S.Y. / Han, Q. / Du, Y. / Yang, X.H. / Wu, R.H. / Niu, Z.C. et al. | 2007
- 979
-
Application of rapid thermal annealing on 1.3-1.55mm GaInNAs(Sb) lasers grown by molecular beam epitaxyZhao, H. / Xu, Y. Q. / Ni, H. Q. / Zhang, S. Y. / Han, Q. / Du, Y. / Yang, X. H. / Wu, R. H. / Niu, Z. C. et al. | 2007
- 984
-
Photonic dot structure which emits photons horizontally to a built-in waveguideMukai, Kohki / Yamamoto, Yasufumi et al. | 2006
- 989
-
Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wellsXiang, N. / Liu, H.F. / Kong, J. / Tang, D.Y. / Pessa, M. et al. | 2007