Si substrate preparation for GaAs/Si by metalorganic chemical vapor deposition (Englisch)
Nationallizenz
- Neue Suche nach: Fujita, K.
- Neue Suche nach: Shiba, Y.
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Fujita, K.
- Neue Suche nach: Shiba, Y.
- Neue Suche nach: Yamamoto, T.
In:
Journal of Crystal Growth
;
99
, 1-4
;
341-345
;
1990
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Si substrate preparation for GaAs/Si by metalorganic chemical vapor deposition
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Beteiligte:
-
Erschienen in:Journal of Crystal Growth ; 99, 1-4 ; 341-345
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Verlag:
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Erscheinungsdatum:01.01.1990
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Format / Umfang:5 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 99, Ausgabe 1-4
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Stoichiometry control for growth of III–V crystalsNishizawa, Jun-ichi et al. | 1990
- 9
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The evaluation of growth dynamics in MBE using electron diffractionJoyce, B.A. et al. | 1990
- 18
-
Recent advances in Bridgman growth modelling and fluid flowFavier, J.J. et al. | 1990
- 30
-
Light scattering in crystal growthBilgram, J.H. / Steininger, R. et al. | 1990
- 38
-
Numerical modelling of crystal nucleation in glassesGreer, A.L. / Evans, P.V. / Hamerton, R.G. / Shangguan, D.K. / Kelton, K.F. et al. | 1990
- 46
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The dynamic roughening of crystalsBalibar, S. / Gallet, F. / Rolley, E. et al. | 1990
- 54
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Growth kinetics on vicinal surfacesVvedensky, D.D. / Clarke, S. / Hugill, K.J. / Wilby, M.R. / Kawamura, T. et al. | 1990
- 60
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Sublattice ordering in GaInP and AlGaInP: Effects of substrate orientationsSuzuki, Tohru / Gomyo, Akiko / Iijima, Sumio et al. | 1990
- 68
-
Simulation of non-isothermal nucleation in strongly supercooled liquidsOhno, K. / Trinkaus, H. / Müller-Krumbhaar, H. et al. | 1990
- 72
-
Electrical nucleation and growth of NaCH3COO·3H2OOhachi, Tadashi / Hamanaka, Masashi / Konda, Hideya / Hayashi, Shigenori / Taniguchi, Ichiro / Hashimoto, Tokio / Kotani, Yasuo et al. | 1990
- 77
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Surface roughening versus surface melting on Lennard-Jones crystal surfacesvan der Eerden, J.P. / Roos, A. / van der Veer, J.M. et al. | 1990
- 83
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Vapor growth mechanism of a crystal surface covered with a quasi-liquid layer — Effect of self-diffusion coefficient of the quasi-liquid layer on the growth rateKuroda, Toshio et al. | 1990
- 88
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Statistical models of crystal surfaces — First-principle approachesCherepanova, T.A. / Stekolnikov, A.V. et al. | 1990
- 93
-
Structure of phase boundaries in the multicomponent lattice systemKaburagi, M. / Ebina, K. et al. | 1990
- 98
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Light scattering at the solid-liquid interface of cyclohexaneSteininger, R. / Bilgram, J.H. et al. | 1990
- 102
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Surface melting of small crystalsNenow, D. / Trayanov, A. et al. | 1990
- 106
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Monte Carlo simulation of covalent surfacesVan der Eerden, J.P. / Guang-zhao, L.I.U. / De Jong, F. / Anders, M.J. et al. | 1990
- 112
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Monte-Carlo simulation of heterogeneous thin film growthNatori, A. / Fukuda, M. / Yasunaga, H. et al. | 1990
- 116
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Kinetics of crystal growth on the solid-on-solid modelUchida, T. / Sato, F. / Wada, K. et al. | 1990
- 120
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In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopyOsaka, J. / Inque, N. / Mada, Y. / Yamada, K. / Wada, K. et al. | 1990
- 124
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Direct observation of LPE growth in GaPInatomi, Y. / Kuribayashi, K. et al. | 1990
- 128
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Experimental studies on growth kinetics of salol crystals from the meltJin, Wei-qing / Lin, Jing / Komatsu, Hiroshi et al. | 1990
- 134
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The development of surface features and kinetics of the dissolution of stearic acidRauls, Matthias / Beckmann, Wolfgang et al. | 1990
- 139
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Theoretical modelling and Czochralski growth of high perfection nickel single crystalsAl-Ourfi, M.S. / Tanner, B.K. et al. | 1990
- 145
-
Novel kinetic and structural studies of wax crystallisationGerson, A.R. / Sherwood, J.N. / Roberts, K.J. / Hausermann, D. et al. | 1990
- 150
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Impurity adsorption and habit changes in aqueous solution grown KCl crystalsLian, Li / Tsukamoto, K. / Sunagawa, I. et al. | 1990
- 156
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Dendritic growth and directional solidificationMisbah, C. / Müller-Krumbhaar, H. / Saito, Y. et al. | 1990
- 161
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Dendritic growth of single viscous finger under the influence of linear anisotropyMatsushita, Mitsugu / Yamada, Hideaki et al. | 1990
- 165
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Effects of surface energy and kinetics on the growth of needle-like dendritesBrener, E.A. et al. | 1990
- 171
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Lattice-gas model simulation of crystal shapesSaito, Yukio / Ueta, Tsuyoshi et al. | 1990
- 175
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Fractal aggregation and dendritic crystal growthUwaha, Makio / Saito, Yukio et al. | 1990
- 179
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Morphology and polarity of GaAs needlesFujii, M. / Iwanaga, H. / Shibata, N. et al. | 1990
- 183
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The formation of side branches of dendritic ice crystals growing from vapor and solutionGonda, T. / Nakahara, S. / Sei, T. et al. | 1990
- 188
-
Preparation of ultrafine γ-Fe particles by microwave plasma processingHayakawa, Kenji / Iwama, Saburo et al. | 1990
- 192
-
Oxidation process of metastable super-fine niobium oxide particlesObara, Kozo / Minami, Kazuko / Hirose, Toshikazu et al. | 1990
- 196
-
Coalescence growth mechanism of ultrafine metal particlesKasukabe, S. et al. | 1990
- 201
-
On the particle behaviour in front of advancing liquid-ice interfaceAzouni, M.A. / Kalita, W. / Yemmou, M. et al. | 1990
- 206
-
Critical growth rates of advancing ice-water interfaces for particle encapsulationLipp, G. / Körber, Ch. / Rau, G. et al. | 1990
- 211
-
Crystal growth of potassium hydrogen tartrate from aqueous solutionVeintemillas-Verdaguer, S. / Rodríguez-Clemente, R. et al. | 1990
- 217
-
Morphological instability of Zn crystals grown by VLS mechanism from Zn-Bi monotectic dropletsYumoto, Hisami / Gotoh, Yoshihiko / Igata, Naohiro / Kishi, Kiyoshi et al. | 1990
- 222
-
Aspects of silicon crystallizationSinke, W.C. / Roorda, S. et al. | 1990
- 229
-
The sources of atomic steps in epitaxial lateral overgrowth of SiSuzuki, Y. / Nishinaga, T. / Sanada, T. et al. | 1990
- 235
-
Heterogeneous silicon crystal growth on a single crystal silicon wafer by a molten silicon spraying deposition methodYokoyama, T. / Fujiya, E. / Maeda, Y. / Itoh, S. / Tanabe, S. / Usui, T. / Akahane, K. et al. | 1990
- 240
-
Nucleation control of silicon on silicon oxide for low-temperature CVD and silicon selective epitaxyKato, Manabu / Sato, Taketoshi / Murota, Junichi / Mikoshiba, Nobuo et al. | 1990
- 245
-
Two-dimensional solid phase epitaxial recovery of amorphous Si formed by ion implantationTamura, M. / Horiuchi, M. et al. | 1990
- 254
-
Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxyKoide, Y. / Zaima, S. / Ohshima, N. / Yasuda, Y. et al. | 1990
- 259
-
Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gasesKobayashi, Shin-ichi / Cheng, Min-Lin / Kohlhase, Armin / Sato, Taketoshi / Murota, Junichi / Mikoshiba, Nobou et al. | 1990
- 263
-
Influence of substrate orientation on the characteristics of Si1−xGex/Si strained layers grown by MBEEtoh, H. / Murakami, E. / Ishizaka, A. / Shimada, T. / Miyao, M. et al. | 1990
- 269
-
Accommodation of lattice misfit in Si1−xGex/Si heterostructuresFukuda, Yukio et al. | 1990
- 274
-
Growth of GeSi thick alloy layers by the yo-yo solute feeding methodSukegawa, Tokuzo / Izawa, Makoto / Katsuno, Hironobu / Tanaka, Akira / Kimura, Masakazu et al. | 1990
- 278
-
Single crystal growth of hexagonal SiC on cubic SiC by intentional polytype controlYoo, Woo Sik / Nishino, Shigehiro / Matsunami, Hiroyuki et al. | 1990
- 284
-
Low temperature epitaxial growth of 3C-SiC on (111) silicon substratesHirabayashi, Yasuo / Kobayashi, Ken / Karasawa, Shiro et al. | 1990
- 287
-
Heteroepitaxial growth of (Ca,Sr)F2 on Si(100) substrates by molecular beam epitaxyMinemura, Tetsuroh / Asano, Junko / Tsutsui, Kazuo / Furukawa, Seijiro et al. | 1990
- 292
-
Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE: Growth behavior and mechanismZhang, S. / Nishinaga, T. et al. | 1990
- 297
-
Heteroepitaxy of GaP-AlxGa1−xP system by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP)Suto, Ken / Kimura, Tomoyuki / Ogasawara, Shigemasa / Nishizawa, Jun-ichi et al. | 1990
- 302
-
Plasma-controlled selective area growth of GaAs by electron-cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE)Yamamoto, Norio / Kondo, Naoto / Nanishi, Yasushi et al. | 1990
- 306
-
Preparation and characterization of high quality inGaAs/GaAs strained multi-quantum wells grown by MBEHou, H.Q. / Huang, Y. / Zhou, J.M. et al. | 1990
- 311
-
Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxyNakata, Yoshiaki / Sugiyama, Yoshihiro / Ueda, Osamu / Sasa, Shigehiko / Fujii, Toshio / Miyauchi, Eizo et al. | 1990
- 315
-
MBE growth of lattice-mismatched layers: InxGa1−xAs/InAs and InxGa1−xAs/InP from x=1 to x=0Tabuchi, Masao / Noda, Susumu / Sasaki, Akio et al. | 1990
- 319
-
Decomposition kinetics of III–V materials used for MOCVD epitaxial growthMatsui, I. / Ishihata, A. / Ohmine, T. et al. | 1990
- 324
-
Selective epitaxy of MOVPE GaAs using diethyl gallium chlorideKuech, T.F. / Tischler, M.A. / Buchan, N.I. / Potemski, R. et al. | 1990
- 329
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Anisotropy in the doping characteristics of dimethylcadmium in GaAs grown by MOVPE on (100) GaAsMatsumoto, Koh / Hidaka, Jun-ichi / Uchida, Kazuo et al. | 1990
- 333
-
A thermodynamic approach for the vapour phase epitaxial growth of GaxIn1−xAs from A Ga-In-H-Cl-As systemMani, V.N. / Dhanasekaran, R. / Ramasamy, P. et al. | 1990
- 341
-
Si substrate preparation for GaAs/Si by metalorganic chemical vapor depositionFujita, K. / Shiba, Y. / Yamamoto, T. et al. | 1990
- 346
-
A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxyOhtsuka, N. / Kitahara, K. / Ozeki, M. / Kodama, K. et al. | 1990
- 352
-
Optical properties of maskless selectively grown GaAs and AlxGa1−xAs on V-grooved Si substratesHashimoto, A. / Fukunaga, T. / Watanabe, N. et al. | 1990
- 356
-
Multilayered structure of GaAs/epi-Si/SiO2/SiYue, A.S. / Yang, C.S. / Oh, S.W. et al. | 1990
- 361
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GaInAsP grown on Si by MOVPE using GaAs/InP double buffer layersHorikawa, H. / Akiyama, M. / Kawai, Y. / Sakuta, M. et al. | 1990
- 365
-
Heteroepitaxial growth of InP on Si substratesSugo, Mitsuru / Yamaguchi, Masafumi / Al-Jassim, M.M. et al. | 1990
- 371
-
InP-insulator interface structure studied by high resolution transmission electron microscopyNozaki, C. / Yasuami, S. / Ishimura, H. / Tokuda, H. et al. | 1990
- 375
-
Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3Hiramatsu, Kazumasa / Amano, Hiroshi / Akasaki, Isamu et al. | 1990
- 381
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Growth of single crystal GaN substrate using hydride vapor phase epitaxyNaniwae, Kouichi / Itoh, Shigetoshi / Amano, Hiroshi / Itoh, Kenji / Hiramatsu, Kazumasa / Akasaki, Isamu et al. | 1990
- 385
-
Epitaxial growth of indium nitrideWakahara, Akihiro / Tsuchiya, Tohru / Yoshida, Akira et al. | 1990
- 390
-
MBE of wide bandgap II–VI compoundsGunshor, R.L. / Kobayashi, M. / Kolodziejski, L.A. / Otsuka, N. / Nurmikko, A.V. et al. | 1990
- 399
-
Photo-MOCVD of ZnO epitaxial filmsShimizu, Masaru / Katayama, Takuma / Shiosaki, Tadashi / Kawabata, Akira et al. | 1990
- 403
-
Thermal stability of ZnSe homo- and heteroepitaxial layers grown at low temperatures by atmospheric pressure MOVPEYodo, Tokuo / Ueda, Kazuhiro / Yamashita, Ken et al. | 1990
- 408
-
Epitaxial growth and photoluminescence characterization of ZnSe: Na films by low-pressure MOCVDYamada, Yoichi / Taguchi, Tsunemasa et al. | 1990
- 413
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High concentration nitrogen doping in MOVPE grown ZnSeOhki, A. / Shibata, N. / Ando, K. / Katsui, A. et al. | 1990
- 418
-
Effect of strain on ZnSe/AlGaInP heterostructures grown by MOVPEYokogawa, Toshiya / Saitoh, Tohru / Hoshina, Jun-ichi / Narusawa, Tadashi et al. | 1990
- 422
-
Lattice matching effect on the luminescent properties of n-ZnSSe on GaAs grown by MOCVDUemoto, Tsutomu / Kamata, Atsushi / Mitsuhashi, Hiroshi / Hirahara, Keijiro / Beppu, Tatsuro et al. | 1990
- 427
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Low pressure VPE of In-doped ZnSe with controlled electrical propertiesMatsumoto, Takashi / Iijima, Takayuki / Goto, Hiromasa et al. | 1990
- 432
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Growth and properties of Zn1−xCdxS films on GaAs by low-pressure MOVPEYamaga, Shigeki / Yoshikawa, Akihiko / Kasai, Haruo et al. | 1990
- 437
-
Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrateFujita, Shizuo / Hayashi, Shigeo / Funato, Mitsuru / Fujita, Shigeo et al. | 1990
- 441
-
Surface processes in ALE and MBE growth of ZnSe: Adsorption and sublimation processesZhu, Ziqiang / Hagino, Minoru / Uesugi, Katsuhiro / Kamiyama, Satomi / Fujimoto, Masami / Yao, Takafumi et al. | 1990
- 446
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Optimum composition in MBE-ZnSxSe1−x/GaAs for high quality heteroepitaxial growthMatsumura, N. / Tsubokura, M. / Miyagawa, K. / Nakamura, N. / Saraie, J. et al. | 1990
- 451
-
Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxyTomomura, Yoshitaka / Kitagawa, Masahiko / Suzuki, Akira / Nakajima, Shigeo et al. | 1990
- 455
-
Heteroepitaxial growth and optical properties of ZnSxTe1−x on GaAs(100) by RF sputteringTokumitsu, Yoji / Kitayama, Haruyuki / Kawabuchi, Akira / Imura, Takeshi / Osaka, Yukio / Fujisawa, Masami et al. | 1990
- 459
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Effect of H2 heat-treatment of excitonic emission in MOCVD-grown CdTe films on (100) GaAs substratesOnodera, Chikara / Ekawa, Mitsuru / Taguchi, Tsunemasa et al. | 1990
- 464
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Characterization of short-period ZnTe-ZnS superlattices grown by MBEKarasawa, Takeshi / Ohkawa, Kazuhiro / Mitsuyu, Tsuneo et al. | 1990
- 468
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Growth of HgTe-ZnTe strained layer superlattices by MOVPEClifton, P.A. / Mullins, J.T. / Brown, P.D. / Lovergine, N. / Brinkman, A.W. / Woods, J. et al. | 1990
- 473
-
The application of scanning tunneling microscopy to the study of molecular beam epitaxyPashley, M.D. et al. | 1990
- 482
-
Surface diffusion and related phenomena in MBE growth of III–V compoundsNishinaga, T. / Shitara, T. / Mochizuki, K. / Cho, K.I. et al. | 1990
- 491
-
Periodic changes in the structure of a surface growing under MBE conditionsIrisawa, T. / Arima, Y. / Kuroda, T. et al. | 1990
- 496
-
Computer simulation of relaxation process of deposited filmsSasajima, Y. / Nakagawa, S. / Miyamoto, E. / Imabayashi, M. et al. | 1990
- 502
-
Molecular layer epitaxy of siliconNishizawa, Jun-ichi / Aoki, Kenji / Suzuki, Sohbe / Kikuchi, Kazuhiko et al. | 1990
- 506
-
SiCl2(X̃1A1 → Ã1B1) photo-assisted epitaxy of siliconIshitani, Akihiko / Ohshita, Yoshio / Takada, Toshikazu et al. | 1990
- 510
-
Anisotropic surface migration during MBE on stepped surfaces of vicinal Si(111)Sakamoto, Kunihiro / Miki, Kazushi / Sakamoto, Tsunenori et al. | 1990
- 514
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Silicon deposition on Si(111) surfaces at room temperature and effects of annealingNakahara, Hitoshi / Ichimiya, Ayahiko et al. | 1990
- 520
-
Atomic level control in gas source MBE growth of cubic SiCYoshinobu, Tatsuo / Nakayama, Michiaki / Shiomi, Hiromu / Fuyuki, Takashi / Matsunami, Hiroyuki et al. | 1990
- 525
-
On the reaction mechanism of GaAs MOCVDNishizawa, Jun-ichi / Kurabayashi, Toru et al. | 1990
- 530
-
RHEED oscillation and surface diffusion length on GaAs(111)B surfaceShitara, T. / Kondo, E. / Nishinaga, T. et al. | 1990
- 535
-
In situ X-ray photoemission spectroscopy for atomic layer epitaxy of InP and GaAsKodama, K. / Ozeki, M. / Sakuma, Y. / Mochizuki, K. / Ohtsuka, N. et al. | 1990
- 540
-
Atomic layer epitaxy of AlAs and AlGaAsMeguro, T. / Iwai, S. / Aoyagi, Y. / Ozaki, K. / Yamamoto, Y. / Suzuki, T. / Okano, Y. / Hirata, A. et al. | 1990
- 545
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Atomic layer epitaxial growth mechanism of a gallium layer on the (100) As surface of GaAs crystals in MOVPETsuda, Minoru / Oikawa, Setsuko / Morishita, Mutsuo / Mashita, Masao et al. | 1990
- 550
-
Atomic layer epitaxy of III–V compounds in a hydride vapor phase systemAhopelto, J. / Kattelus, H.P. / Saarilahti, J. / Suni, I. et al. | 1990
- 556
-
Atomic layer epitaxy of GaAsP and InAsP by halogen systemKoukitu, Akinori / Saegusa, Akihiko / Seki, Hisashi et al. | 1990
- 560
-
Atomic ordering in InGaP crystals grown by chloride-VPE methodUeda, O. / Hoshino, M. / Kodama, K. / Yamada, H. / Ozeki, M. et al. | 1990
- 566
-
Atomic-layer epitaxy of (100) CdTe on GaAs substratesFaschinger, W. / Sitter, H. et al. | 1990
- 572
-
Molecular layer epitaxy of α-Al2O3 filmsOya, Gin-ichiro / Sawada, Yasuji et al. | 1990
- 577
-
Growth and structures of metal-MgO composite filmsTanaka, Nobuo / Mihama, Kazuhiro et al. | 1990
- 583
-
Size distribution and morphology of islands in discontinuous silver films prepared by sputtering methodSugawara, Akira / Nakamura, Yoshio / Nittono, Osamu et al. | 1990
- 588
-
Growth of Ag on an Mo(110) surface investigated by RHEED and SEM observationsGotoh, Yoshihiko / Yanokura, Eiji et al. | 1990
- 593
-
Mode of order twinning in CuAu epitaxial thin filmsMaruyama, Saiyu / Yamamoto, Katsumi et al. | 1990
- 597
-
Growth of Al-Mn, Al-Cu-Fe and Al-Fe quasicrystalline films prepared by vacuum depositionNoro, M. / Tanaka, N. / Mihama, K. et al. | 1990
- 601
-
Surface texture of iron films grown on copper buffer layerAndo, Y. / Dingley, D.J. et al. | 1990
- 606
-
CEMS study of the growth and properties of Fe3O4 filmsFujii, T. / Takano, M. / Katano, R. / Bando, Y. / Isozumi, Y. et al. | 1990
- 611
-
Thin films of chromium oxide compounds formed by the spray-ICP techniqueSuzuki, M. / Kagawa, M. / Syono, Y. / Hirai, T. et al. | 1990
- 616
-
Growth of magneto-optic garnet layers on structured surfacesTolksdorf, W. / Dammann, H. / Pross, E. / Strocka, B. / Welz, F. / Willich, P. et al. | 1990
- 621
-
Formation of thin films by the treatment of amorphous titania with H2O2Matsuo, Kaori / Takeshita, Toshihiro / Nakano, Katsuyuki et al. | 1990
- 625
-
Zinc phosphide thin films grown by plasma assisted vapor phase depositionSuda, Toshikazu et al. | 1990
- 630
-
Heteroepitaxial growth of LiNbO3 single crystal films by ion plating methodMatsunaga, H. / Ohno, H. / Okamoto, Y. / Nakajima, Y. et al. | 1990
- 634
-
Exploratory technique in liquid phase epitaxy of potassium tantalate niobateHulliger, J. / Gutmann, R. et al. | 1990
- 638
-
Growth of birefringent films by oblique depositionTaga, Y. / Motohiro, T. et al. | 1990
- 643
-
Meeting device needs through melt growth of large-diameter elemental and compound semiconductorsThomas, R.N. / Hobgood, H.M. / Ravishankar, P.S. / Braggins, T.T. et al. | 1990
- 654
-
Oxygen in Czochralski silicon for ULSIBarraclough, K.G. et al. | 1990
- 665
-
In-situ observation of impurity diffusion boundary layer in silicon Czochralski growthKakimoto, Koichi / Eguchi, Minoru / Watanabe, Hisao / Hibiya, Taketoshi et al. | 1990
- 670
-
Crystal-melt interface shape of Czochralski-grown large diameter germanium crystalsRoth, M. / Azoulay, M. / Gafni, G. / Mizrachi, M. et al. | 1990
- 676
-
GaAs single crystal for 3 inch diameter wafers grown by horizontal zone melt techniqueMizuniwa, S. / Kashiwa, M. / Kurihara, T. / Nakamura, K. / Okubo, S. / Ikegami, K. et al. | 1990
- 680
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Gas phase contribution to carbon incorporation and extraction mechanisms for LEC GaAsNishio, Johji / Nakata, Yuhji et al. | 1990
- 685
-
Dislocations and microdefects in LEC-grown silicon-doped gallium arsenide crystalsFrigerio, G. / Mucchino, C. / Weyher, J.L. / Zanotti, L. / Paorici, C. et al. | 1990
- 692
-
Heat transfer through the melt in a silicon Czochralski processKobayashi, Sumio et al. | 1990
- 696
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Global heat transfer model for Czochralski crystal growth based on diffuse-gray radiationMiyahara, S. / Kobayashi, S. / Fujiwara, T. / Kubo, T. / Fujiwara, H. et al. | 1990
- 702
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Numerical simulation of crystal growth: Influence of melt convection on global heat transfer and interface shapeRyckmans, Y. / Nicodéme, P. / Dupret, F. et al. | 1990
- 707
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Total simulation model of high pressure liquid encapsulated Czochralski crystal growthIshida, M. / Katano, K. / Kawabata, S. / Higuchi, Y. / Orito, F. / Yamaguchi, Y. / Yajima, F. / Okano, T. et al. | 1990
- 713
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Crystal growth by the spin cast methodSuzuki, M. / Hide, I. / Matsuyama, T. / Yamashita, H. / Suzuki, T. / Moritani, T. / Maeda, Y. et al. | 1990
- 717
-
Microhardness variations in II-VI semiconducting compounds as a function of compositionAndrews, R.N. / Walck, S.D. / Price, M.W. / Szofran, F.R. / Su, C.-H. / Lehoczky, S.L. et al. | 1990
- 722
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MCT single crystal growth by travelling heater method with a mercury reservoirMochizuki, Katsumi / Masumoto, Katashi / Iwanaga, Hiroshi et al. | 1990
- 727
-
Crystal growth of CdTe in a multi-zone vertical bridgman furnace with a PBN crucibleYasuda, Kazuhito / Iwakami, Yoshifumi / Saji, Manabu et al. | 1990
- 731
-
Productivity function for multireactional CVT and its application to iodine transport of cadmium sulphideAttolini, G. / Paorici, C. / Zecchina, Luisa et al. | 1990
- 737
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Growth of high-quality cubic ZnS crystals and their application to MIS blue light-emitting diodesOhno, Tetsuichiro / Kurisu, Kenichi / Taguchi, Tsunemasa et al. | 1990
- 743
-
Growth of ultrafine particles of II-VI compounds by a new gas evaporation methodKaito, Chihiro / Saito, Yoshio et al. | 1990
- 747
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Solid state growth of some I-III-VI2 chalcopyrite crystalsYamamoto, Nobuyuki / Yokota, Kazumi / Horinaka, Hiromichi et al. | 1990
- 752
-
Vapor phase epitaxy of CuGaS2 using metal chlorides and H2S sourcesYamauchi, A. / Saito, H. / Kinito, H. / Iida, S. et al. | 1990
- 757
-
Growth of AgGaS2 single crystals by chemical transport reactionNoda, Y. / Kurasawa, T. / Sugai, N. / Furukawa, Y. / Masumoto, K. et al. | 1990
- 762
-
X-ray photoacoustic absorption spectra of CuInSe2Toyoda, T. / Masujima, T. / Shiwaku, H. / Nakanishi, H. / Endo, S. / Irie, T. / Shiozaki, I. / Iida, A. / Kawata, H. / Ando, M. et al. | 1990
- 766
-
Lattice properties of chalcopyrite semiconductors under high pressureTakarabe, K. / Kawai, K. / Wakamura, K. / Minomura, S. / Yamamoto, N. et al. | 1990
- 772
-
Crystal growth and photoluminescence studies in Fe-doped single crystals of CuAll-xGaxS2Sato, K. / Tanaka, K. / Ishii, K. / Matsuda, S. et al. | 1990
- 776
-
Crystal growth and characterization of CdInGaS4 and related compoundsEndo, Saburo / Ando, Shizutoshi / Matsushita, Hiroaki / Nomura, Shigetaka / Irie, Taizo / Nakanishi, Hisayuki / Noda, Yasutoshi / Takizawa, Takeo / Toyoda, Taro et al. | 1990
- 781
-
Growth of CdSnP2 single crystals by temperature difference methodShirakata, Sho / Isomura, Shigehiro et al. | 1990
- 785
-
Growth and electric properties of CdGa2Se4 crystalsHorinaka, Hiromichi / Uemura, Akira / Yamamoto, Nobuyuki et al. | 1990
- 790
-
The development of new NLO crystals in the borate seriesChen, Chuangtian / Wu, Yicheng / Li, Rukang et al. | 1990
- 799
-
Crystal growth and characterization of InBO3: Tb3+Chaminade, J.P. / Garcia, A. / Pouchard, M. / Fouassier, C. / Jacquier, B. / Perret-Gallix, D. / Gonzalez-Mestres, L. et al. | 1990
- 805
-
Crystal growth and properties of lithium triborateShuqing, Zhao / Chaoen, Huang / Hongwu, Zhang et al. | 1990
- 811
-
Bridgman growth of Li2B4O7 crystalsShi-ji, Fan / Guan-shun, Shen / Wen, Wang / Jin-long, Li / Xiu-hang, Le et al. | 1990
- 815
-
Growth and characterization of deuterated L-arginine phosphate monohydrate, a new nonlinear crystal, for efficient harmonic generation of fusion experiment lasersYokotani, Atsushi / Sasaki, Takatomo / Fujioka, Kana / Nakai, Sadao / Yamanaka, Chiyoe et al. | 1990
- 820
-
Growth of large KDP crystals for laser fusion experimentsSasaki, Takatomo / Yokotani, Atsushi et al. | 1990
- 827
-
Effect of impurities on the growth of KDP crystals: On the mechanism of adsorption on {100} faces from tapering dataOwczarek, I. / Sangwal, K. et al. | 1990
- 832
-
Growth and characterization of MgO-doped LiNbO3 for electro-optic devicesFurukawa, Yasunori / Sato, Masayoshi / Nitanda, Fumio / Ito, Kohei et al. | 1990
- 837
-
Single crystal growth of pure and Ba-doped strontium tantalate (SrTa206) by floating zone methodTanaka, Isao / Sato, Yuzo / Kojima, Hironao et al. | 1990
- 841
-
Optical quality and laser characteristics of YAG:Nd crystals grown by the Bridgman-Stockbarger methodPetrova, D. / Pavloff, O. / Marinov, P. et al. | 1990
- 845
-
Crystal growth of LaMgAI11O19: NdWyon, C. / Aubert, J.J. / Grange, Y. et al. | 1990
- 850
-
Crystal growth of large size Dy3Al5O12 Garnet single crystalsKimura, Hideo / Sakamoto, Masaru / Numazawa, Takenori / Sato, Mitsunori / Maeda, Hiroshi et al. | 1990
- 854
-
Growth of gadolinium lutetium gallium Garnet (GLGG) single crystals by Czochralski methodMiyazawa, Yasuto / Toshima, Hiroaki / Hanita, Shin-ichi / Kodama, Nobuhiro et al. | 1990
- 859
-
Distribution of gas-forming impurities and inclusions in leucosapphire crystalsArzumanyan, G.A. et al. | 1990
- 864
-
Top-seeded solution growth of BaTiO3, KNbO3, SrTiO3, Bi12TiO20 and La2-x, BaxCuO4Rytz, D. / Wechsler, B.A. / Nelson, C.C. / Kirby, K.W. et al. | 1990
- 869
-
Habit modifications of Beryl grown by the flux methodMiyata, Takéshi / Kawabata, Yuka / Takeda, Ichio / Kojima, Hironao et al. | 1990
- 875
-
Flux growth of some rare-earth titanate crystalsYokoyama, Mitsunori / Ota, Toshitaka / Yamai, Iwao / Takahashi, Junich et al. | 1990
- 879
-
Crystal growth of silicate apatites by flux methodSetoguchi, Masahiro et al. | 1990
- 885
-
The dependence of optical absorption in Bi12SiO20 on temperature and hydrostatic pressureToyoda, T. / Nakanishi, H. / Endo, S. / Irie, T. et al. | 1990
- 891
-
Growth mechanism of doped polar trigycine sulfate crystalsFang, C.S. / Dong, S.M. / Wang, M. / Zhuo, H.S. / Jiang, M.H. et al. | 1990
- 895
-
Hydrothermal growth and dissolution behavior of calcite single crystal in nitrate solutionsKikuta, Kö-ichi / Hirano, Shin-ichi et al. | 1990
- 900
-
Hydrothermal growht of KTP crystals in the medium range of temperature and pressureShou-Quan, Jia / Hong-Da, Niu / Jin-Ge, Tan / Yan-Ping, Xu / Ying, Tao et al. | 1990
- 905
-
Hydrothermal growth and characterization of ZnO single crystals of high puritySakagami, Noboru et al. | 1990
- 910
-
Fluid flow formation resulting from forced vibration of a growing crystalZharikov, E.V. / Prihod'ko, L.V. / Storozhev, N.R. et al. | 1990
- 915
-
Relationship between crystal growth and physical properties in the high temperature superconductor YBa2Cu3O7-δHoltzberg, F. / Feild, C. et al. | 1990
- 922
-
Primary crystallization fields and crystal growth of YBa2Cu3O7-y and NdBa2Cu3O7-yOka, Kunihiko / Unoki, Hiromi et al. | 1990
- 925
-
A method for improving superconductivity in plate crystals of DyBa2Cu3OyInoue, T. / Hayashi, S. / Komatsu, H. / Ohno, T. / Shimizu, M. et al. | 1990
- 929
-
Crystal growth of high Tc superconductors YBa2Cu3Ox, Bi3Sr3CaCu2.5Ox and Pb0.6Bi3Sr2CaCu3OxHong, Wang / Shuxia, Shang / Zhaohe, Yang / Zhuo, Wang / Xiaonong, Shen / Huansui, Zhao / Minhua, Jiang / Huanchu, Chen et al. | 1990
- 933
-
Seeded growth, morphology and surface topology of superconducting Bi-Sr-Ca-Cu-O single crystalsWang, Yaoshui / Bennema, P. / Schreurs, L.W.M. / Van Bentum, P.J.M. / Kempen, H. Van / Van De Leemput, L.E.C. / Wnuk, J. / Van Der Linden, P. et al. | 1990
- 937
-
The preparation conditions and characteristics of the Bi-Sr-Ca-Cu-O single crystalsKishida, S. / Tokutaka, H. / Nakanishi, S. / Fujimoto, H. / Nishimori, K. / Ishihara, N. / Watanabe, Y. / Futo, W. et al. | 1990
- 942
-
Growth and magnetic properties of Tl-Ca-Ba-Cu-O single crystalsKawaguchi, Kenichi / Nakao, Masao et al. | 1990
- 947
-
Thin film growth of high-Tc YBa2Cu3O7-δ phase by an oxygen refilling processAkinaga, M. / Abukay, D. / Rinderer, L. et al. | 1990
- 951
-
Bi-Sr-Ca-Cu-O Superconductor films grown by the LPE techniqueYang, C.S. / Yue, A.S. et al. | 1990
- 954
-
Preparation of high-Tc Bi-Sr-Ca-Cu-O films on MgO substrates by the solvent-evaporation epitaxial (SEE) methodTakeya, Hiroyuki / Takei, Humihiko et al. | 1990
- 958
-
Structural evaluation of CVD-grown Bi-Sr-Ca-Cu-O thin films on MgO substrates by transmission election microscopyUeda, O. / Kimura, T. / Yamada, H. / Yamawaki, H. / Ikeda, K. / Ihara, M. / Ozeki, M. et al. | 1990
- 965
-
Preparation of Bi2Sr2CaCu2Oy films with preferential c-axis orientation by the laser evaporation method and the electronic propertiesFukami, Takeshi / Kamura, Takanobu / Youssef, Ahmed A.A. / Mass, Shoichi et al. | 1990
- 969
-
Growth and characterization of Va-Sn-Ga (Va = Ta, Nb, V) superconducting compoundsYe, J. / Horiuchi, H. / Shishido, T. / Toyota, N. / Ukei, K. / Sasaki, T. / Fukuda, T. et al. | 1990
- 975
-
Crystal growth and properties of FexMo6S8-yWada, H. / Nozaki, H. / Ishii, M. et al. | 1990
- 979
-
Formation of slip dislocations during Czochralski growth of copper and its dilute alloys crystalsImashimizu, Y. / Watanabé, J. et al. | 1990
- 983
-
Suppression of moving conductors by a magnetic fieldKasuga, Masanobu / Yonekura, Tokio / Satoyoshi, Tsutomu et al. | 1990
- 988
-
A study of the homogeneity and deviations from stoichiometry in mercuric iodideBurger, A. / Morgan, S. / He, C. / Silberman, E. / van den Berg, L. / Ortale, C. / Franks, L. / Schieber, M. et al. | 1990
- 994
-
Growth of high quality single crystals of YB66Tanaka, Takaho / Otani, Shigeki / Ishizawa, Yoshio et al. | 1990
- 998
-
Crystal growth of icosahedral B12 compounds from high-temperature metal solutionsHigashi, Iwami / Kobayashi, Masayoshi / Takahashi, Yasuo / Okada, Shigeru / Hamano, Kenya et al. | 1990
- 1005
-
Preparation of V8C7 single crystal by floating zone techniqueOtani, Shigeki / Tanaka, Takaho / Ishizawa, Yoshio et al. | 1990
- 1009
-
Growth and electrical properties of high purity organic molecular crystalsKarl, Norbert et al. | 1990
- 1017
-
Significance of crystal growth of proteins and nucleic acids in biology: Novel ways in crystallogenesisMikol, Vincent / Rodeau, Jean-Luc / Hirsch, Ernest / Giegé, Richard et al. | 1990
- 1023
-
Growth and characterization of 4-(N,N-dimethylamino)-3-acetamidonitrobenzene bulk crystals and single crystal cored fibersKerkoc, P. / Hulliger, J. et al. | 1990
- 1028
-
Oriented crystallization of normal long chain compounds on polyolefinsKawaguchi, Akiyoshi / Okihara, Takumi / Katayama, Ken-ichi et al. | 1990
- 1033
-
On the polymorphism and growth of stearic acid thin films prepared by vacuum-depositionSaito, Yoshio / Kaito, Chihiro / Inaoka, Kimio / Sato, Kiyotaka / Okada, Masakazu et al. | 1990
- 1038
-
Crystal growth of tetraphenylporphyrin thin filmsYanagi, Hisao / Takemoto, Kazuhiro / Hayashi, Shigehiko / Ashida, Michio et al. | 1990
- 1044
-
The effect of crystallization properties and casting solvent on the release of tetracycline from ethyl cellulose filmsAzoury, Reuven / Elkayam, Rina / Friedman, Michael et al. | 1990
- 1048
-
Diffusion and cluster formation in supersaturated solutionsMyerson, Allan S. / Lo, Pei Yi et al. | 1990
- 1053
-
Characterization of additive performance on crystallization: Habit modificationVan Rosmalen, G.M. / Bennema, P. et al. | 1990
- 1061
-
The effect of additives on nucleation: A low cost automated apparatusBeckmann, W. / Behrens, M. / Lacmann, R. / Rolfs, J. / Tanneberger, U. et al. | 1990
- 1065
-
Structural studies of the crystal/solution interface using synchrotron radiationCunningham, D. / Davey, R.J. / Roberts, K.J. / Sherwood, J.N. / Shripathi, T. et al. | 1990
- 1070
-
The effects of additives on the crystal habit of monosodium L-glutamate monohydrateSano, Chiaki / Nagashima, Nobuya / Kawakita, Tetsuya / Iitaka, Yoichi et al. | 1990
- 1076
-
Secondary nucleation kinetcs of ammonium sulfate in a CMSMPR crystallizerDaudey, P.J. / van Rosmalen, G.M. / de Jong, E.J. et al. | 1990
- 1082
-
Impluse response experiments of secondary nucleation of potassium alumKubota, Noriaki / Sato, Tsutomu / Shimizu, Kenji et al. | 1990
- 1087
-
Contact nucleation: in situ and ex situ observations of surface damagingvan der Heijden, A.E.D.M. / Elwenspoek, M. et al. | 1990
- 1092
-
Reactive crystallization of calcium carbonate in a batch crystallizerKotaki, Yasushi / Tsuge, Hideki et al. | 1990
- 1098
-
Influence of hydrodynamic conditions on the controlled double-jet precipitation of silver halides in mechanically agitated systemsStávek, Jiři / Vondrák, Pavel / Fořt, Ivan / Nývlt, Jaroslav / Šípek<sup>*</sup>, Milan et al. | 1990
- 1104
-
Verification of the constant crystal growth model for attrition particles and its relevance to the modeling of crystallizersWang, S. / Mersmann, A. / Kind, M. et al. | 1990
- 1108
-
Growth rate dispersion in seeded batch D-xylose crystallizationGabas, N. / Biscans, B. / Laguérie, C. et al. | 1990
- 1112
-
The growth of L-SCMC crystal and its optical resolutionYokota, Masaaki / Yoshimura, Haruna / Toyokura, Ken / Inoue, Chouzo / Naijyo, Hideichi et al. | 1990
- 1117
-
Recrystallization of calcium sulfate in phosphoric acid solutions; batchwise operationWitkamp, G.J. / Seckler, M.M. / Bruinsma, O.S.L. / van Rosmalen, G.M. et al. | 1990
- 1124
-
Crystallization in detergent performanceVerdoes, D. / Van Landschoot, R.C. / Van Rosmalen, G.M. et al. | 1990
- 1130
-
Selection of solvents for organic crystal growth from solutionTanaka, Yoshiaki / Matsuoka, Masakuni et al. | 1990
- 1134
-
Progressive freezing and sweating in a test unitUlrich, J. / Özoğuz, Y. et al. | 1990
- 1138
-
The influence of melt composition on the crystal morphology of m-chloronitrobenzeneMatsuoka, M. / Garside, J. / Rout, J.E. / Black, S.N. / Davey, R.J. et al. | 1990
- 1142
-
in-situ Observation of crystal growth of p-xylene from p-, m-mixtures by application of very high pressureNishiguchi, Nobuhiko / Moritoki, Masato / Tanabe, Harumasa et al. | 1990
- 1147
-
Purification of organic crystals by high-pressure sweatingLouhi, M. / Kaipainen, E. / Niemi, H. / Silventoinen, I. / Palosaari, S. et al. | 1990
- 1151
-
Modelling a continuous column crystallizer: Dispersion and growth characteristics of a cooling sectionTavare, N.S. / Matsuoka, M. / Garside, J. et al. | 1990
- 1156
-
Growth and morphology of diamond crystals under stable and metastable contitionsSunagawa, Ichiro et al. | 1990
- 1162
-
Chemical crystallization of diamond from the activated vapor phaseSpitsyn, Boris V. et al. | 1990
- 1168
-
The analysis of defect structures and substrate/film interfaces of diamond thin filmsWilliams, B.E. / Glass, J.T. / Davis, Robert F. / Kobashi, K. et al. | 1990
- 1177
-
Diamond deposition at low substrate temperaturesYarbrough, W.A. / Badzian, A.R. / Pickrell, D. / Liou, Y. / Inspektor, A. et al. | 1990
- 1183
-
Differences in morphology and impurity content of synthetic diamond grown from molten nickelKanda, Hisao / Ohsawa, Toshikazu / Yamaoka, Shinobu et al. | 1990
- 1188
-
Growth of diamond by atomic vapor depositionKoizumi, Satoshi / Inuzuka, Tadao / Sawabe, Atsuhito / Suzuki, Kazuhiro et al. | 1990
- 1192
-
Synthesis of B-doped diamond filmOkano, Ken / Akiba, Yukio / Kurosu, Tateki / Iida, Masamori / Nakamura, Terutaro et al. | 1990
- 1196
-
Effects of substrate pretreatment on the growth of diamond films with CVD methodShu-Cheng, Yu / Hon-Sho, Chun / Fon-Shu, Guo et al. | 1990
- 1201
-
Growth of diamond films at low pressure using magneto-microwave plasma CVDWei, Jin / Kawarada, Hiroshi / Suzuki, Jun-ichi / Hiraki, Akio et al. | 1990
- 1206
-
Nucleation control and selective growth of diamond particles formed with plasma CVDSheng^Ma, Jing / Kawarada, Hiroshi / Yonehara, Takao / Suzuki, Jun-ichi / Yokota, Yoshihiro / Hiraki, Akio et al. | 1990
- 1211
-
Growth of diamond thin films on silicon and TEM observation of the interfaceKobayashi, Ken / Karasawa, Shiro / Watanabe, Takeshi / Togashi, Fumitaka et al. | 1990
- 1215
-
Diamond structure in films deposited at relatively low substrate temperatureNakao, Setsuo / Maruno, Shigeo / Noda, Mikio / Kusakabe, Hiroshi / Shimizu, Hideki et al. | 1990
- 1220
-
Evaporation of H2O—CO ice and its astrophysical implicationsKouchi, A. et al. | 1990
- 1227
-
in-situ observation of high temperature silicate solutionsNakamura, Hirohiko / Tsukamoto, Katsuo / Sunagawa, Ichiro et al. | 1990
- 1232
-
Brazil twinning in natural and synthetic amethyst crystalsTaijing, Lu / Sunagawa, I. / Balitsky, V.S. et al. | 1990
- 1238
-
Low temperature type snow crystals with capped dendrites or platesUyeda, H. / Kikuchi, K. et al. | 1990
- 1242
-
A comparative study of crystal growth phenomena under reduced and enhanced gravityMüller, Georg et al. | 1990
- 1258
-
The instability of surface tension driven flow in models for floating zones under normal and reduced gravitySchwabe, D. / Velten, R. / Scharmann, A. et al. | 1990
- 1265
-
Semi-confined Bridgman growth of germanium crystals in microgravityTillberg, Erik / Carlberg, Torbjörn et al. | 1990
- 1273
-
Growth of α-LiIO3 crystal under microgravity conditionsChen, W.C. / Mai, Z.H. / Ma, W.Y. / Jia, S.Q. / Xu, L. et al. | 1990
- 1276
-
Conditions for diffusion-controlled steady-state growth of Pb1−xSnxTe under microgravityKinoshita, Kyoichi / Yamada, Tomoaki et al. | 1990
- 1281
-
Growth kinetics in space- and earth-grown InP and GaSb crystalsDanilewsky, A.N. / Benz, K.W. / Nishinaga, T. et al. | 1990
- 1287
-
GaAs solution growth experiment in microgravityKodama, Shigeo / Suzuki, Yuichi / Ueda, Osamu / Ohtsuki, Osamu et al. | 1990
- 1291
-
Influence of solution convection on LPE InxGa1-xSbAsakawa, K. / Torimoto, Y. / Hayakawa, Y. / Kumagawa, M. et al. | 1990
- 1295
-
Gravity effect on solute transport in dissolution and growth of siliconKimura, Masakazu / Tanaka, Akira / Sukegawa, Tokuzo et al. | 1990
- 1300
-
Large single crystals of mercuric iodide from the vapour phase; preparation of a space experimentPiechotka, M. / Kaldis, E. et al. | 1990
- 1309
-
Direct observation of defects in transparent crystals by optical microscopyMing, Nai-ben / Ge, Chuan-zhen et al. | 1990
- 1315
-
High resolution X-ray diffraction and topography for crystal characterizationTanner, B.K. et al. | 1990
- 1324
-
Effect of interface structure on the X-ray double crystal rocking curve peak position from very thin layers in the highly asymmetric Bragg geometryCockerton, S. / Miles, S.J. / Green, G.S. / Tanner, B.K. et al. | 1990
- 1329
-
STM images of anisotropic atomic steps on si(111)-7 × 7 surfacesTokumoto, Hiroshi / Miki, Kazushi / Kajimura, Koji et al. | 1990
- 1333
-
In situ STM of silver electrocrystallizationWichman, B. / Van Der Eerden, J.P. / Gerritsen, J.W. et al. | 1990
- 1339
-
Influence of oxygen on polycrystalline silicon crystal for solar cellsHide, I. / Matsuyama, T. / Suzuki, M. / Yamashita, H. / Suzuki, T. / Moritani, T. / Maeda, Y. et al. | 1990
- 1343
-
Report on IOCG council and general assembly meetings held during ICCG-9 in Sendai, Japan, 20–25 August 1989| 1990
- 1346
-
Author index| 1990
- 1360
-
Subject index| 1990
- ii
-
Editorial Board| 1990
- xi
-
Editor's preface| 1990
- xiii
-
Preface| 1990