A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100) (Englisch)
- Neue Suche nach: Mukhopadhyay, Partha
- Weitere Informationen zu Mukhopadhyay, Partha:
- https://orcid.org/0000-0002-5838-8007
- Neue Suche nach: Kumar, Rahul
- Neue Suche nach: Ghosh, Saptarsi
- Neue Suche nach: Chakraborty, Apurba
- Neue Suche nach: Bag, Ankush
- Neue Suche nach: Kabi, Sanjib
- Neue Suche nach: Banerji, Pallab
- Neue Suche nach: Biswas, Dhrubes
- Neue Suche nach: Mukhopadhyay, Partha
- Neue Suche nach: Kumar, Rahul
- Neue Suche nach: Ghosh, Saptarsi
- Neue Suche nach: Chakraborty, Apurba
- Neue Suche nach: Bag, Ankush
- Neue Suche nach: Kabi, Sanjib
- Neue Suche nach: Banerji, Pallab
- Neue Suche nach: Biswas, Dhrubes
In:
Journal of Crystal Growth
;
418
;
138-144
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100)
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Beteiligte:Mukhopadhyay, Partha ( Autor:in ) / Kumar, Rahul ( Autor:in ) / Ghosh, Saptarsi ( Autor:in ) / Chakraborty, Apurba ( Autor:in ) / Bag, Ankush ( Autor:in ) / Kabi, Sanjib ( Autor:in ) / Banerji, Pallab ( Autor:in ) / Biswas, Dhrubes ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 418 ; 138-144
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:12.02.2015
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Format / Umfang:7 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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- IFC
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Editorial Board| 2015