Overview of phosphorus diffusion and gettering in multicrystalline silicon (Englisch)
- Neue Suche nach: Bentzen, A.
- Neue Suche nach: Holt, A.
- Neue Suche nach: Bentzen, A.
- Neue Suche nach: Holt, A.
In:
Materials Science & Engineering B: Solid-State Materials for Advanced Technology
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159-160
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228-234
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2008
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Overview of phosphorus diffusion and gettering in multicrystalline silicon
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Beteiligte:Bentzen, A. ( Autor:in ) / Holt, A. ( Autor:in )
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Erschienen in:Materials Science & Engineering B: Solid-State Materials for Advanced Technology ; 159-160 ; 228-234
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:24.10.2008
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Format / Umfang:7 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 159-160
Zeige alle Jahrgänge und Ausgaben
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- 1
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PrefaceKissinger, Gudrun / Pizzini, Sergio / Tu, Hailing / Yamada-Kaneta, Hiroshi et al. | 2009
- 2
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Elaboration and characterization of Si(n)/PS/ZnO(n) structure obtained by rf-magnetron sputtering from aerogel nanopowder target materialAlaya, A. / Nouiri, M. / Ayadi, Z. Ben / Djessas, K. / Khirouni, K. / Mir, L. El et al. | 2008
- 6
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Amorphous silicon solar cells made with SnO2:F TCO films deposited by atmospheric pressure CVDDagkaldiran, Ü. / Gordijn, A. / Finger, F. / Yates, H.M. / Evans, P. / Sheel, D.W. / Remes, Z. / Vanecek, M. et al. | 2008
- 10
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Dominant role of interfaces in solar cells with N-a-Si:H/P-c-Si heterojunction with intrinsic thin layerDatta, A. / Damon-Lacoste, J. / Nath, M. / Roca i Cabarrocas, P. / Chatterjee, P. et al. | 2008
- 14
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Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elementsMabrook, M.F. / Jombert, A.S. / Machin, S.E. / Pearson, C. / Kolb, D. / Coleman, K.S. / Zeze, D.A. / Petty, M.C. et al. | 2008
- 18
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Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:HMolpeceres, C. / Lauzurica, S. / García-Ballesteros, J.J. / Morales, M. / Guadaño, G. / Ocaña, J.L. / Fernández, S. / Gandía, J.J. / Villar, F. / Nos, O. et al. | 2008
- 23
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Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVDMuñoz, D. / Voz, C. / Blanque, S. / Ibarz, D. / Bertomeu, J. / Alcubilla, R. et al. | 2008
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Role of hydrogen in the peeling of hydrogenated microcrystalline silicon filmsPham, N. / Djeridane, Y. / Abramov, A. / Hadjadj, A. / Cabarrocas, P. Roca i et al. | 2008
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Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:HPoliani, E. / Somaschini, C. / Sanguinetti, S. / Grilli, E. / Guzzi, M. / Le Donne, A. / Binetti, S. / Pizzini, S. / Chrastina, D. / Isella, G. et al. | 2008
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Evidence of bimodal crystallite size distribution in μc-Si:H filmsRam, Sanjay K. / Islam, Md. Nazrul / Kumar, Satyendra / Roca i Cabarrocas, P. et al. | 2008
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Evidence of bimodal crystallite size distribution in mc-Si:H filmsRam, S. K. / Islam, M. N. / Kumar, S. / Roca i Cabarrocas, P. et al. | 2009
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Gas phase considerations for the growth of device quality nanocrystalline silicon at high rateRath, J.K. / Verkerk, A.D. / Liu, Y. / Brinza, M. / Goedheer, W.J. / Schropp, R.E.I. et al. | 2008
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Improved homogeneity of microcrystalline absorber layer in thin-film silicon tandem solar cellsSmirnov, Vlad / Das, Chandan / Melle, Thomas / Lambertz, Andreas / Hülsbeck, Markus / Carius, Reinhard / Finger, Friedhelm et al. | 2008
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Bragg reflector and laser fired back contact in a-Si:H/c-Si heterostructure solar cellTucci, M. / Serenelli, L. / Salza, E. / Pirozzi, L. / De Cesare, G. / Caputo, D. / Ceccarelli, M. et al. | 2008
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Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperaturesVerkerk, A.D. / de Jong, M.M. / Rath, J.K. / Brinza, M. / Schropp, R.E.I. / Goedheer, W.J. / Krzhizhanovskaya, V.V. / Gorbachev, Y.E. / Orlov, K.E. / Khilkevitch, E.M. et al. | 2008
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Laser annealing of the Si layers in Si/SiO2 multiple quantum wellsArguirov, T. / Mchedlidze, T. / Kouteva-Arguirova, S. / Kittler, M. / Rölver, R. / Berghoff, B. / Bätzner, D. / Spangenberg, B. et al. | 2009
- 61
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Non-agglomerated silicon nanoparticles on (001) silicon substrate formed by PLA and their photoluminescence propertiesDu, Jun / Tu, Hailing / Wang, Lei et al. | 2008
- 66
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Si quantum dots for solar cell fabricationFiccadenti, M. / Pinto, N. / Morresi, L. / Murri, R. / Serenelli, L. / Tucci, M. / Falconieri, M. / Sytchkova, A. Krasilnikova / Grilli, M.L. / Mittiga, A. et al. | 2008
- 70
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Silicon nanostructures for solar cell applicationsGourbilleau, F. / Dufour, C. / Rezgui, B. / Brémond, G. et al. | 2008
- 74
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Structural and optical properties of silicon quantum dots in silicon nitride grown in situ by PECVD using different gas precursorsMercaldo, Lucia V. / Veneri, Paola Delli / Esposito, Emilia / Massera, Ettore / Usatii, Iurie / Privato, Carlo et al. | 2008
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PECVD in-situ growth of silicon quantum dots in silicon nitride from silane and nitrogenMercaldo, Lucia V. / Veneri, Paola Delli / Esposito, Emilia / Massera, Ettore / Usatii, Iurie / Privato, Carlo et al. | 2008
- 80
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Quantitative study of the Si/SiO2 phase separation in substoichiometric silicon oxide filmsNicotra, G. / Spinella, C. / La Magna, A. / Bongiorno, C. / Rimini, E. et al. | 2008
- 83
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Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowiresSalem, B. / Dhalluin, F. / Baron, T. / Jamgotchian, H. / Bedu, F. / Dallaporta, H. / Gentile, P. / Pauc, N. / den Hertog, M.I. / Rouviere, J.L. et al. | 2008
- 87
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Space-separated quantum cutting in differently prepared solid-state dispersions of Si nanocrystals and Er3+ ions in SiO2Timmerman, D. / Gregorkiewicz, T. et al. | 2009
- 90
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Strain and strain-release engineering at epitaxial SiGe islands on Si(001) for microelectronic applicationsVastola, G. / Marzegalli, A. / Montalenti, F. / Miglio, Leo et al. | 2008
- 95
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Nitrogen in silicon: Diffusion at 500–750°C and interaction with dislocationsAlpass, C.R. / Murphy, J.D. / Falster, R.J. / Wilshaw, P.R. et al. | 2008
- 95
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Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocationsAlpass, C. R. / Murphy, J. D. / Falster, R. J. / Wilshaw, P. R. et al. | 2009
- 99
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Effect of processing on microstructure of Si:MnBak-Misiuk, J. / Misiuk, A. / Romanowski, P. / Barcz, A. / Jakiela, R. / Dynowska, E. / Domagala, J.Z. / Caliebe, W. et al. | 2008
- 103
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Plastic deformation in 200mm silicon wafers arising from mechanical loads in vertical-type and horizontal-type furnacesFischer, A. / Kissinger, G. / Ritter, G. / Akhmetov, V. / Kittler, M. et al. | 2009
- 107
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Vacancies and E-centers in silicon as multi-symmetry defectsGanchenkova, M.G. / Oikkonen, L.E. / Borodin, V.A. / Nicolaysen, S. / Nieminen, R.M. et al. | 2008
- 112
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The self-interstitial in silicon and germaniumJones, R. / Carvalho, A. / Goss, J.P. / Briddon, P.R. et al. | 2008
- 117
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Impact of bridge- and double-bonded oxygen on OH-terminated Si quantum dots: A density-functional–Hartree–Fock studyKönig, D. / Rudd, J. / Conibeer, G. / Green, M.A. et al. | 2008
- 122
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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in SiLondos, C.A. / Antonaras, G.D. / Potsidi, M.S. / Misiuk, A. et al. | 2008
- 128
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Microscopic underpinnings of defect nucleation and growth in silicon crystal growth and wafer processingSinno, Talid / Dai, Jianguo / Kapur, Sumeet S. et al. | 2008
- 134
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Investigation of intragrain defects in pc-Si layers obtained by aluminum-induced crystallization: Comparison of layers made by low and high temperature epitaxyVan Gestel, D. / Dogan, P. / Gordon, I. / Bender, H. / Lee, K.Y. / Beaucarne, G. / Gall, S. / Poortmans, J. et al. | 2009
- 138
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Gigantic uphill drift of vacancies and self-interstitials in siliconVoronkov, V.V. / Falster, R. et al. | 2008
- 142
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Evidence of energy levels due to nitrogen dimers in siliconVoronkova, G.I. / Batunina, A.V. / Voronkov, V.V. / Falster, R. et al. | 2008
- 145
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Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperaturesZeng, Yuheng / Yang, Deren / Ma, Xiangyang / Chen, Jiahe / Que, Duanlin et al. | 2008
- 149
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Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped siliconZirkelbach, F. / Lindner, J.K.N. / Nordlund, K. / Stritzker, B. et al. | 2008
- 153
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Cavities at the Si projected range by high dose and energy Si ion implantation in SiCanino, M. / Regula, G. / Lancin, M. / Xu, M. / Pichaud, B. / Ntzoenzok, E. / Barthe, M.F. et al. | 2008
- 157
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Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiationEmtsev, V.V. / Emtsev, V.V. Jr. / Kozlovskii, V.V. / Misiuk, A. / Oganesyan, G.A. / Poloskin, D.S. / Sobolev, N.A. / Tropp, E.A. et al. | 2008
- 160
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Electron spin resonance study of the Si-B5 paramagnetic center in neutron-irradiated heat-treated siliconKeunen, K. / Stesmans, A. et al. | 2008
- 164
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He implantation induced nanovoids in crystalline SiKilpeläinen, S. / Kuitunen, K. / Slotte, J. / Tuomisto, F. / Bruno, E. / Mirabella, S. / Priolo, F. et al. | 2008
- 168
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The role of the substrate in the high energy boron implantation damage recoveringMica, I. / Di Piazza, L. / Laurin, L. / Mariani, M. / Mauri, A.G. / Polignano, M.L. / Ricci, E. / Sammiceli, F. / Spoldi, G. et al. | 2008
- 173
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Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantationRomano, E. / Narducci, D. / Corni, F. / Frabboni, S. / Ottaviani, G. / Tonini, R. / Cerofolini, G.F. et al. | 2008
- 177
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Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial SiVines, L. / Monakhov, E.V. / Jensen, J. / Kuznetsov, A.Yu. / Svensson, B.G. et al. | 2008
- 182
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Hydrogen transformations in Si-based solar structures studied by precise FTIR spectroscopyAkhmetov, V.D. / Ulyashin, A.G. / Holt, A. / Kittler, M. et al. | 2009
- 186
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Modulated photoluminescence as an effective lifetime measurement method: Application to a-Si:H/c-Si heterojunction solar cellsChouffot, R. / Brezard-Oudot, A. / Kleider, J.-P. / Brüggemann, R. / Labrune, M. / Roca i Cabarrocas, P. / Ribeyron, P.-J. et al. | 2008
- 190
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Optical spectroscopy of carrier relaxation processes in Si nanocrystalsde Boer, W. / Zhang, H. / Gregorkiewicz, T. et al. | 2008
- 194
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Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in siliconFraser, K.J. / Falster, R.J. / Wilshaw, P.R. et al. | 2008
- 198
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Electron spin resonance study of a platinum–manganese complex in siliconIshiyama, T. / Murakami, N. / Kamiura, Y. / Yamashita, Y. et al. | 2008
- 202
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Study on the time decay of excess carriers in solar siliconLauer, K. / Laades, A. / Übensee, H. / Lawerenz, A. et al. | 2008
- 206
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Evaluation of local strain in Si using UV-Raman spectroscopyOgura, Atsushi / Kosemura, Daisuke / Takei, Munehisa / Uchida, Hidetsugu / Hattori, Nobuyoshi / Yoshimaru, Masaki / Mayuzumi, Satoru / Wakabayashi, Hitoshi et al. | 2008
- 212
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Characterization of up-converter layers on bifacial silicon solar cellsPan, A.C. / del Cañizo, C. / Luque, A. et al. | 2008
- 216
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Light-beam-induced current measurements on copper–nickel co-contaminated Cz-silicon bicrystalsSaring, P. / Rudolf, C. / Stolze, L. / Seibt, M. et al. | 2008
- 219
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Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayerAngermann, H. / Conrad, E. / Korte, L. / Rappich, J. / Schulze, T.F. / Schmidt, M. et al. | 2008
- 224
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Competitive iron gettering between internal gettering sites and boron implantation in CZ-siliconAsghar, M.I. / Yli-Koski, M. / Savin, H. / Haarahiltunen, A. / Talvitie, H. / Sinkkonen, J. et al. | 2008
- 228
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Overview of phosphorus diffusion and gettering in multicrystalline siliconBentzen, A. / Holt, A. et al. | 2008
- 235
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Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulationChen, Jiahe / Yang, Deren / Ma, Xiangyang / Que, Duanlin et al. | 2008
- 239
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Is impurity gettering or passivation by hydrogen the improvement key of mc-Si solar cells during processing steps?Dubois, S. / Enjalbert, N. / Warchol, F. / Martinuzzi, S. et al. | 2008
- 242
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Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:HFocsa, A. / Slaoui, A. / Charifi, H. / Stoquert, J.P. / Roques, S. et al. | 2009
- 248
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As-grown iron precipitates and gettering in multicrystalline siliconHaarahiltunen, A. / Savin, H. / Yli-Koski, M. / Talvitie, H. / Asghar, M.I. / Sinkkonen, J. et al. | 2008
- 253
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Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafersMartinuzzi, S. / Warchol, F. / Dubois / Enjalbert, N. et al. | 2008
- 256
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Limiting factors of gettering treatments in mc-Si wafers from the metallurgical routePérichaud, I. / Martinuzzi, S. / Degoulange, J. / Trassy, C. et al. | 2008
- 259
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Gettering in silicon-on-insulator wafers with polysilicon layerSavin, H. / Yli-Koski, M. / Haarahiltunen, A. / Virkkala, V. / Talvitie, H. / Asghar, M.I. / Sinkkonen, J. / Hintsala, J. et al. | 2008
- 264
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Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaicsSeibt, M. / Abdelbarey, D. / Kveder, V. / Rudolf, C. / Saring, P. / Stolze, L. / Voß, O. et al. | 2008
- 269
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Effect of internal gettering of iron on electrical characteristics of devicesTalvitie, H. / Haarahiltunen, A. / Savin, H. / Yli-Koski, M. / Asghar, M.I. / Sinkkonen, J. et al. | 2008
- 274
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Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstockBinetti, S. / Libal, J. / Acciarri, M. / Di Sabatino, M. / Nordmark, H. / Øvrelid, E.J. / Walmsley, J.C. / Holmestad, R. et al. | 2008
- 278
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Limitations in the application of the ideal-diode model to the analysis of luminescence from silicon solar cellsBrüggemann, R. / Bauer, G.H. et al. | 2008
- 282
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Isotype bifacial silicon solar cells obtained by ITO spray pyrolysisBruk, L. / Fedorov, V. / Sherban, D. / Simashkevich, A. / Usatii, I. / Bobeico, E. / Morvillo, P. et al. | 2008
- 286
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Proof of concept of an epitaxy-free layer-transfer process for silicon solar cells based on the reorganisation of macropores upon annealingDepauw, V. / Gordon, I. / Beaucarne, G. / Poortmans, J. / Mertens, R. / Celis, J.-P. et al. | 2008
- 291
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Study of interdigitated back contact silicon heterojunctions solar cells by two-dimensional numerical simulationsDiouf, D. / Kleider, J.P. / Desrues, T. / Ribeyron, P.-J. et al. | 2008
- 295
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Optimization of roughness, reflectance and photoluminescence for acid textured mc-Si solar cells etched at different HF/HNO3 concentrationsGonzález-Díaz, B. / Guerrero-Lemus, R. / Díaz-Herrera, B. / Marrero, N. / Méndez-Ramos, J. / Borchert, Dietmar et al. | 2008
- 299
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Acceptable contamination levels in solar grade silicon: From feedstock to solar cellHofstetter, J. / Lelièvre, J.F. / del Cañizo, C. / Luque, A. et al. | 2008
- 305
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Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusionJourdan, J. / Dubois, S. / Cabal, R. / Veschetti, Y. et al. | 2008
- 309
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A comparison of the etching behaviour of the FS Cr-free SOI with that of the Secco etching solution on silicon-on-insulator substratesMähliß, Jochen / Abbadie, Alexandra / Kolbesen, Bernd O. et al. | 2008
- 314
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Electronic properties of the interface between Si and sputter deposited indium-tin oxideMonakhov, E.V. / Balasundaraprabhu, R. / Muthukumarasamy, N. / Svensson, B.G. et al. | 2008
- 318
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Influence of metal grid patterns on the performance of silicon solar cells at different illumination levelsMorvillo, P. / Bobeico, E. / Formisano, F. / Roca, F. et al. | 2008
- 322
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Detailed balance limit for solar cell efficiencyQueisser, Hans J. et al. | 2008
- 329
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Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glassRau, B. / Weber, T. / Gorka, B. / Dogan, P. / Fenske, F. / Lee, K.Y. / Gall, S. / Rech, B. et al. | 2008
- 333
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Black surface structures for crystalline silicon solar cellsYoo, Jinsu / Yu, Gwonjong / Yi, Junsin et al. | 2008
- 338
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Defect engineering via ion implantation to control B diffusion in SiCanino, M. / Regula, G. / Xu, M. / Ntzoenzok, E. / Pichaud, B. et al. | 2008
- 342
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Hydrogenation of platinum introduced in silicon by radiation enhanced diffusionHazdra, P. / Komarnitskyy, V. / Buršíková, V. et al. | 2008
- 346
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Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ionsHazdra, P. / Komarnitskyy, V. et al. | 2008
- 350
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Copper decoration and etching of crystal defects in SOI materialsIdrisi, Hanan / Kolbesen, Bernd O. et al. | 2008
- 355
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Thermal annealing of SiC thin films with varying stoichiometryKuenle, Matthias / Janz, Stefan / Eibl, Oliver / Berthold, Christoph / Presser, Volker / Nickel, Klaus-Georg et al. | 2008
- 361
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Stress-mediated redistribution of Mn in annealed Si:MnMisiuk, A. / Barcz, A. / Bak-Misiuk, J. / Romanowski, P. / Chow, L. / Choi, E. et al. | 2008
- 365
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Co-precipitation of copper and nickel in crystalline siliconRudolf, C. / Saring, P. / Stolze, L. / Seibt, M. et al. | 2008
- 369
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Author Index| 2009
- 372
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Subject Index| 2009
- CO2
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Editorial Board| 2009