An enhanced MOSFET threshold voltage model for the 6–300K temperature range (Englisch)
- Neue Suche nach: Dao, Nguyen Cong
- Neue Suche nach: Kass, Abdallah El
- Neue Suche nach: Azghadi, Mostafa Rahimi
- Neue Suche nach: Jin, Craig T.
- Neue Suche nach: Scott, Jonathan
- Neue Suche nach: Leong, Philip H.W.
- Neue Suche nach: Dao, Nguyen Cong
- Neue Suche nach: Kass, Abdallah El
- Neue Suche nach: Azghadi, Mostafa Rahimi
- Neue Suche nach: Jin, Craig T.
- Neue Suche nach: Scott, Jonathan
- Neue Suche nach: Leong, Philip H.W.
In:
Microelectronics and Reliability
;
69
;
36-39
;
2016
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:An enhanced MOSFET threshold voltage model for the 6–300K temperature range
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Beteiligte:Dao, Nguyen Cong ( Autor:in ) / Kass, Abdallah El ( Autor:in ) / Azghadi, Mostafa Rahimi ( Autor:in ) / Jin, Craig T. ( Autor:in ) / Scott, Jonathan ( Autor:in ) / Leong, Philip H.W. ( Autor:in )
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Erschienen in:Microelectronics and Reliability ; 69 ; 36-39
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Verlag:
- Neue Suche nach: Elsevier Ltd
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Erscheinungsdatum:15.12.2016
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 69
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