H2S molecular beam passivation of Ge(001) (Englisch)
- Neue Suche nach: Merckling, C.
- Neue Suche nach: Chang, Y.C.
- Neue Suche nach: Lu, C.Y.
- Neue Suche nach: Penaud, J.
- Neue Suche nach: El-Kazzi, M.
- Neue Suche nach: Bellenger, F.
- Neue Suche nach: Brammertz, G.
- Neue Suche nach: Hong, M.
- Neue Suche nach: Kwo, J.
- Neue Suche nach: Meuris, M.
- Neue Suche nach: Dekoster, J.
- Neue Suche nach: Heyns, M.M.
- Neue Suche nach: Caymax, M.
- Neue Suche nach: Merckling, C.
- Neue Suche nach: Chang, Y.C.
- Neue Suche nach: Lu, C.Y.
- Neue Suche nach: Penaud, J.
- Neue Suche nach: El-Kazzi, M.
- Neue Suche nach: Bellenger, F.
- Neue Suche nach: Brammertz, G.
- Neue Suche nach: Hong, M.
- Neue Suche nach: Kwo, J.
- Neue Suche nach: Meuris, M.
- Neue Suche nach: Dekoster, J.
- Neue Suche nach: Heyns, M.M.
- Neue Suche nach: Caymax, M.
In:
Microelectronic Engineering
;
88
, 4
;
399-402
;
2010
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:H2S molecular beam passivation of Ge(001)
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Beteiligte:Merckling, C. ( Autor:in ) / Chang, Y.C. ( Autor:in ) / Lu, C.Y. ( Autor:in ) / Penaud, J. ( Autor:in ) / El-Kazzi, M. ( Autor:in ) / Bellenger, F. ( Autor:in ) / Brammertz, G. ( Autor:in ) / Hong, M. ( Autor:in ) / Kwo, J. ( Autor:in ) / Meuris, M. ( Autor:in )
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Erschienen in:Microelectronic Engineering ; 88, 4 ; 399-402
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2010
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Format / Umfang:4 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 88, Ausgabe 4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materialsMolle, Alessandro / Brammertz, Guy / Dimoulas, Athanasios / Marchiori, Chiara et al. | 2011
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New opportunities for SiGe and Ge channel p-FETsBedell, S.W. / Daval, N. / Khakifirooz, A. / Kulkarni, P. / Fogel, K. / Domenicucci, A. / Sadana, D.K. et al. | 2010
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3D monolithic integration: Technological challenges and electrical resultsVinet, M. / Batude, P. / Tabone, C. / Previtali, B. / LeRoyer, C. / Pouydebasque, A. / Clavelier, L. / Valentian, A. / Thomas, O. / Michaud, S. et al. | 2010
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InGaAs and Ge MOSFETs with high k dielectricsLee, W. C. / Chang, P. / Lin, T. D. / Chu, L. K. / Chiu, H. C. / Kwo, J. / Hong, M. et al. | 2011
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InGaAs and Ge MOSFETs with high kappa dielectricsLee, W.C. / Chang, P. / Lin, T.D. / Chu, L.K. / Chiu, H.C. / Kwo, J. / Hong, M. et al. | 2011
- 336
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InGaAs and Ge MOSFETs with high κ dielectricsLee, W.C. / Chang, P. / Lin, T.D. / Chu, L.K. / Chiu, H.C. / Kwo, J. / Hong, M. et al. | 2010
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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsVincent, B. / Shimura, Y. / Takeuchi, S. / Nishimura, T. / Eneman, G. / Firrincieli, A. / Demeulemeester, J. / Vantomme, A. / Clarysse, T. / Nakatsuka, O. et al. | 2010
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Systematic study of shallow junction formation on germanium substratesHellings, Geert / Rosseel, Erik / Clarysse, Trudo / Petersen, Dirch Hjorth / Hansen, Ole / Nielsen, Peter Folmer / Simoen, Eddy / Eneman, Geert / De Jaeger, Brice / Hoffmann, Thomas et al. | 2010
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Smooth, 3D Ge transistor channels by heteroepitaxial growthCho, Hans S. / Kamins, Theodore I. et al. | 2010
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Numerical simulation of III–V FET architectures for high frequency and low consumption applicationsShi, Ming / Saint-Martin, Jérôme / Bournel, Arnaud / Dollfus, Philippe et al. | 2010
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Design and analysis of the Formula Not Shown As implant-free quantum-well device structureBenbakhti, B. / Kalna, K. / Chan, K. / Towie, E. / Hellings, G. / Eneman, G. / De Meyer, K. / Meuris, M. / Asenov, A. et al. | 2011
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Design and analysis of the As implant-free quantum-well device structureBenbakhti, Brahim et al. | 2011
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Design and analysis of the As implant-free quantum-well device structureBenbakhti, Brahim / Kalna, Karol / Chan, KahHou / Towie, Ewan / Hellings, Geert / Eneman, Geert / De Meyer, Kristin / Meuris, Marc / Asenov, Asen et al. | 2010
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Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFETChan, K.H. / Benbakhti, B. / Riddet, C. / Watling, J.R. / Asenov, A. et al. | 2010
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Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materialsMoreau, M. / Munteanu, D. / Autran, J.L. et al. | 2010
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The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substratesGassoumi, M. / Ben Salem, M.M. / Saadaoui, S. / Grimbert, B. / Fontaine, J. / gaquiere, C. / Maaref, H. et al. | 2010
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Bonding and gap states at GaAs-oxide interfacesRobertson, John / Lin, Liang et al. | 2010
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Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(001)Shen, Jian / Feldwinn, Darby L. / Melitz, Wilhelm / Droopad, Ravi / Kummel, Andrew C. et al. | 2010
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Experimental and theoretical investigation of defects at (100) Si1− xGex/oxide interfacesHoussa, M. / Pourtois, G. / Meuris, M. / Heyns, M.M. / Afanas’ev, V.V. / Stesmans, A. et al. | 2010
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Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interfaceBaldovino, S. / Molle, A. / Fanciulli, M. et al. | 2010
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Electron density of states at Ge/oxide interfaces due to formationBinder, Jan Felix / Broqvist, Peter / Pasquarello, Alfredo et al. | 2010
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Electron density of states at Ge/oxide interfaces due to formationBinder, Jan Felix et al. | 2011
- 391
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Electron density of states at Ge/oxide interfaces due to Formula Not Shown formationBinder, J. F. / Broqvist, P. / Pasquarello, A. et al. | 2011
- 395
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Defect formation and annihilation at interfacesTsetseris, L. et al. | 2011
- 395
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Defect formation and annihilation at Formula Not Shown interfacesTsetseris, L. / Pantelides, S. T. et al. | 2011
- 395
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Defect formation and annihilation at interfacesTsetseris, L. / Pantelides, S.T. et al. | 2010
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H2S molecular beam passivation of Ge(001)Merckling, C. / Chang, Y.C. / Lu, C.Y. / Penaud, J. / El-Kazzi, M. / Bellenger, F. / Brammertz, G. / Hong, M. / Kwo, J. / Meuris, M. et al. | 2010
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Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam depositionLamperti, A. / Baldovino, S. / Molle, A. / Fanciulli, M. et al. | 2010
- 407
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The effect of Se and Se/Al passivation on the oxidation of GeTsoutsou, D. / Panayiotatos, Y. / Galata, S. / Sotiropoulos, A. / Mavrou, G. / Golias, E. / Dimoulas, A. et al. | 2010
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Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(001) substratesBhuiyan, Md. Nurul Kabir / Menghini, Mariela / Seo, Jin Won / Locquet, Jean-Pierre et al. | 2010
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Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)Wiemer, C. / Baldovino, S. / Lamagna, L. / Perego, M. / Schamm-Chardon, S. / Fanciulli, M. et al. | 2010
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Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-k thin films deposited on Si and Ge as candidate for future gate dielectricsSchamm-Chardon, S. / Coulon, P. E. / Lamagna, L. / Wiemer, C. / Baldovino, S. / Fanciulli, M. et al. | 2011
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Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectricsSchamm-Chardon, S. / Coulon, P.E. / Lamagna, L. / Wiemer, C. / Baldovino, S. / Fanciulli, M. et al. | 2010
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Solid phase epitaxial growth of Dy-germanide films on Ge(001) substratesBhuiyan, Md. Nurul Kabir / Menghini, Mariela / Seo, Jin Won / Locquet, Jean-Pierre et al. | 2010
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Ge volatilization products in high-k gate dielectricsGolias, E. / Tsetseris, L. / Dimoulas, A. / Pantelides, S.T. et al. | 2010
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Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substratesLamagna, L. / Fusi, M. / Spiga, S. / Fanciulli, M. / Brammertz, G. / Merckling, C. / Meuris, M. / Molle, A. et al. | 2010
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Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interfaceFusi, M. / Lamagna, L. / Spiga, S. / Fanciulli, M. / Brammertz, G. / Merckling, C. / Meuris, M. / Molle, A. et al. | 2010
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Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAsChang, Y.H. / Huang, M.L. / Chang, P. / Lin, C.A. / Chu, Y.J. / Chen, B.R. / Hsu, C.L. / Kwo, J. / Pi, T.W. / Hong, M. et al. | 2010
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Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance–voltage methodAstromskas, Gvidas / Storm, Kristian / Caroff, Philippe / Borgström, Magnus / Lind, Erik / Wernersson, Lars-Erik et al. | 2010
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Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structuresMiranda, E. / O’Connor, E. / Hurley, P.K. et al. | 2010
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Diffusion and doping issues in germaniumBracht, H. / Schneider, S. / Kube, R. et al. | 2010
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Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germaniumKoffel, S. / Kaiser, R.J. / Bauer, A.J. / Amon, B. / Pichler, P. / Lorenz, J. / Frey, L. / Scheiblin, P. / Mazzocchi, V. / Barnes, J.-P. et al. | 2010
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Simulation of hole-mobility in doped relaxed and strained GeWatling, Jeremy R. / Riddet, Craig / Chan, Kah H. / Asenov, Asen et al. | 2010
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Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channelsSawano, K. / Toyama, K. / Masutomi, R. / Okamoto, T. / Arimoto, K. / Nakagawa, K. / Usami, N. / Shiraki, Y. et al. | 2010
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Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(001) crystalline templatesSaint-Girons, G. / Cheng, J. / Chettaoui, A. / Penuelas, J. / Gobaut, B. / Regreny, P. / Largeau, L. / Patriarche, G. / Botella, Claude / Hollinger, G. et al. | 2010
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Multi-technique characterisation of MOVPE-grown GaAs on SiWong, C.S. / Bennett, N.S. / McNally, P.J. / Galiana, B. / Tejedor, P. / Benedicto, M. / Molina-Aldareguia, J.M. / Monaghan, S. / Hurley, P.K. / Cherkaoui, K. et al. | 2010
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Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffractionFitouri, H. / Moussa, I. / Rebey, A. / El Jani, B. et al. | 2010
- 480
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Damages of Ge devices by 2-MeV electrons and their recoveryOhyama, H. / Sakamoto, K. / Sukizaki, H. / Takakura, K. / Tsukamoto, M. / Matsuo, K. / Tsunoda, I. / Kato, I. / Nakashima, T. / Simoen, E. et al. | 2010
- 484
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Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopyOhyama, H. / Naka, N. / Takakura, K. / Tsunoda, I. / Gonzalez, M.B. / Simoen, E. / Claeys, C. et al. | 2010
- 488
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Laser annealing of SiGe and Ge based devicesFisicaro, G. / La Magna, A. / Piccitto, G. / Privitera, V. et al. | 2010
- 492
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Micro-Raman characterization of Germanium thin films evaporated on various substratesSorianello, V. / Colace, L. / Assanto, G. / Nardone, M. et al. | 2010
- 496
-
Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered meltTaishi, Toshinori / Ise, Hideaki / Murao, Yu / Ohsawa, Takayuki / Tokumoto, Yuki / Ohno, Yutaka / Yonenaga, Ichiro et al. | 2010
- 499
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Germanium substrate loss during thermal processingKaiser, R.J. / Koffel, S. / Pichler, P. / Bauer, A.J. / Amon, B. / Frey, L. / Ryssel, H. et al. | 2010
- 503
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Stability of Frenkel pairs in Si(100) surface in the presence of germanium and oxygen atomsFetah, S. / Chikouche, A. / Dkhissi, A. / Landa, G. / Pochet, P. et al. | 2010
- 506
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Study of deep level defect behavior in undoped n-InP (100) after rapid thermal annealingJanardhanam, V. / Ashok Kumar, A. / Rajagopal Reddy, V. / Choi, Chel Jong et al. | 2010
- 509
-
Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrixVieira, E.M.F. / Pinto, S.R.C. / Levichev, S. / Rolo, A.G. / Chahboun, A. / Buljan, M. / Barradas, N.P. / Alves, E. / Bernstorff, S. / Conde, O. et al. | 2010
- 514
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Optical power monitors in Ge monolithically integrated on SOI chipsColace, L. / Sorianello, V. / Romagnoli, M. / Socci, L. / Assanto, G. et al. | 2010
- 518
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Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical propertiesPietralunga, S.M. / Feré, M. / Lanata, M. / Radnóczi, G. / Misják, F. / Lamperti, A. / Martinelli, M. / Ossi, P.M. et al. | 2010
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Surface activation using oxygen and nitrogen radical for Ge–Si Avalanche photodiode integrationByun, Ki Yeol / Ferain, Isabelle / Hayes, John / Yu, Ran / Gity, Farzan / Colinge, Cindy et al. | 2010
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Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterizationSorianello, V. / Colace, L. / Assanto, G. / Notargiacomo, A. / Armani, N. / Rossi, F. / Ferrari, C. et al. | 2010
- 530
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Epitaxial growth of Fe/MgO/Ge(001) heterostructuresCantoni, M. / Petti, D. / Rinaldi, C. / Bertacco, R. et al. | 2010
- IFC
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Inside Front Cover - Editorial Board| 2011
- v
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Table of Contents| 2011