A portable analytical GaAs MESFET simulation model including temperature and negative differential mobility effects (Englisch)
M. Ansersson (Semicond. Lab., Tech. Res. Centre of Finland, Espoo, Finland) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway, 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 203-6
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:A portable analytical GaAs MESFET simulation model including temperature and negative differential mobility effects
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Untertitel:M. Ansersson (Semicond. Lab., Tech. Res. Centre of Finland, Espoo, Finland) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway, 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 203-6
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Verlag:
- Neue Suche nach: Benn Electronics Publications Ltd, Luton
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Erscheinungsdatum:01.01.1987
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Format / Umfang:1 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 18, Ausgabe 4
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