Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation (Englisch)
- Neue Suche nach: Dun, Shaobo
- Neue Suche nach: Lu, Tiecheng
- Neue Suche nach: Hu, Youwen
- Neue Suche nach: Hu, Qiang
- Neue Suche nach: You, Caofeng
- Neue Suche nach: Huang, Ningkang
- Neue Suche nach: Dun, Shaobo
- Neue Suche nach: Lu, Tiecheng
- Neue Suche nach: Hu, Youwen
- Neue Suche nach: Hu, Qiang
- Neue Suche nach: You, Caofeng
- Neue Suche nach: Huang, Ningkang
In:
Materials Letters
;
62
, 21-22
;
3617-3619
;
2008
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation
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Beteiligte:Dun, Shaobo ( Autor:in ) / Lu, Tiecheng ( Autor:in ) / Hu, Youwen ( Autor:in ) / Hu, Qiang ( Autor:in ) / You, Caofeng ( Autor:in ) / Huang, Ningkang ( Autor:in )
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Erschienen in:Materials Letters ; 62, 21-22 ; 3617-3619
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:03.04.2008
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 62, Ausgabe 21-22
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- IFC
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Editorial Board| 2008