Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells (Englisch)
- Neue Suche nach: Ganbold, T.
- Neue Suche nach: Antonelli, M.
- Neue Suche nach: Cautero, G.
- Neue Suche nach: Menk, R.H.
- Neue Suche nach: Cucini, R.
- Neue Suche nach: Biasiol, G.
- Neue Suche nach: Ganbold, T.
- Neue Suche nach: Antonelli, M.
- Neue Suche nach: Cautero, G.
- Neue Suche nach: Menk, R.H.
- Neue Suche nach: Cucini, R.
- Neue Suche nach: Biasiol, G.
In:
Journal of Crystal Growth
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425
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341-345
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2015
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells
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Beteiligte:Ganbold, T. ( Autor:in ) / Antonelli, M. ( Autor:in ) / Cautero, G. ( Autor:in ) / Menk, R.H. ( Autor:in ) / Cucini, R. ( Autor:in ) / Biasiol, G. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 425 ; 341-345
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2015
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 425
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014)Brown, April S. / Ptak, Aaron J. et al. | 2015
- 2
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Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopySvensson, S.P. / Sarney, W.L. / Yu, K.M. / Ting, M. / Calley, W.L. / Novikov, S.V. / Foxon, C.T. / Walukiewicz, W. et al. | 2015
- 5
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Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of ~3.3µm diode lasersKaspi, Ron / Lu, Chunte / Yang, Chi / Newell, Timothy C. / Luong, Sanh et al. | 2015
- 9
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Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1−xN layers with medium Al content (x=0.4–0.6)Nechaev, D.V. / Brunkov, P.N. / Troshkov, S.I. / Jmerik, V.N. / Ivanov, S.V. et al. | 2015
- 13
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In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBESasaki, Takuo / Takahasi, Masamitu / Suzuki, Hidetoshi / Ohshita, Yoshio / Yamaguchi, Masafumi et al. | 2015
- 16
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- 21
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Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoringLastras-Martínez, A. / Ortega-Gallegos, J. / Guevara-Macías, L.E. / Nuñez-Olvera, O. / Balderas-Navarro, R.E. / Lastras-Martínez, L.F. / Lastras-Montaño, L.A. / Lastras-Montaño, M.A. et al. | 2015
- 25
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- 29
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Growth of InAs–InAsSb SLS through the use of digital alloysSchuler-Sandy, T. / Klein, B. / Casias, L. / Mathews, S. / Kadlec, C. / Tian, Z. / Plis, E. / Myers, S. / Krishna, S. et al. | 2015
- 33
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AlxIn1−xAsySb1−y alloys lattice matched to InAs(100) grown by molecular beam epitaxyRojas-Ramirez, J.S. / Wang, S. / Contreras-Guerrero, R. / Caro, M. / Bhatnagar, K. / Holland, M. / Oxland, R. / Doornbos, G. / Passlack, M. / Diaz, C.H. et al. | 2015
- 39
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- 43
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Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural propertiesKarow, Matthias M. / Faleev, Nikolai N. / Smith, David J. / Honsberg, Christiana B. et al. | 2015
- 49
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Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical PropertiesKarow, Matthias M. / Faleev, Nikolai N. / Maros, Aymeric / Honsberg, Christiana B. et al. | 2015
- 54
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- 60
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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wellsTukiainen, Antti / Likonen, Jari / Toikkanen, Lauri / Leinonen, Tomi et al. | 2015
- 64
-
Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reductionFujikawa, S. / Taketsuru, T. / Tsuji, D. / Maeda, T. / Fujishiro, H.I. et al. | 2015
- 70
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- 76
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Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBEShibasaki, I. / Ishida, S. / Geka, H. / Manago, T. et al. | 2015
- 80
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InAs nanowires with AlxGa1−xSb shells for band alignment engineeringRieger, Torsten / Grützmacher, Detlev / Lepsa, Mihail Ion et al. | 2015
- 85
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Si-doped AlGaAs/GaAs(631)A heterostructures grown by MBE as a function of the As-pressureMéndez-García, Víctor-Hugo / Shimomura, S. / Gorbatchev, A.Yu. / Cruz-Hernández, E. / Vázquez-Cortés, D. et al. | 2015
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- 94
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- 99
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Crystal structure of low-temperature-grown In0.45Ga0.55As on an InP substrateTominaga, Yoriko / Tomiyasu, Yuki / Kadoya, Yutaka et al. | 2015
- 102
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Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devicesGozu, Shin-ichiro / Mozume, Teruo et al. | 2015
- 106
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Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs capLu, X.M. / Matsubara, S. / Nakagawa, Y. / Kitada, T. / Isu, T. et al. | 2015
- 110
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Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STMWood, M.R. / Kanedy, K. / Lopez, F. / Weimer, M. / Klem, J.F. / Hawkins, S.D. / Shaner, E.A. / Kim, J.K. et al. | 2015
- 115
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Low-temperature growth of InGaN films over the entire composition range by MBEFabien, Chloe A.M. / Gunning, Brendan P. / Alan Doolittle, W. / Fischer, Alec M. / Wei, Yong O. / Xie, Hongen / Ponce, Fernando A. et al. | 2015
- 119
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Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substratesHardy, M.T. / Storm, D.F. / Nepal, N. / Katzer, D.S. / Downey, B.P. / Meyer, D.J. et al. | 2015
- 125
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Molecular beam epitaxy of free-standing wurtzite AlxGa1−xN layersNovikov, S.V. / Staddon, C.R. / Martin, R.W. / Kent, A.J. / Foxon, C.T. et al. | 2015
- 129
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High growth speed of gallium nitride using ENABLE-MBEWilliams, J.J. / Fischer, A.M. / Williamson, T.L. / Gangam, S. / Faleev, N.N. / Hoffbauer, M.A. / Honsberg, C.B. et al. | 2015
- 133
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Low temperature AlN growth by MBE and its application in HEMTsFaria, Faiza Afroz / Nomoto, Kazuki / Hu, Zongyang / Rouvimov, Sergei / Jena, Debdeep et al. | 2015
- 138
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A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrateMakimoto, T. / Kumakura, K. / Maeda, M. / Yamamoto, H. / Horikoshi, Y. et al. | 2015
- 141
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Dislocation reduction in GaN grown on nano-patterned templatesYang, W.C. / Chen, K.Y. / Cheng, Kai-Yuan / Wang, Y.L. / Hsieh, K.C. / Cheng, K.Y. et al. | 2015
- 145
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Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlatticesSchubert, F. / Zybell, S. / Heitmann, J. / Mikolajick, T. / Schmult, S. et al. | 2015
- 149
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Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and siliconPark, Byung-Guon / Saravana Kumar, R. / Moon, Mee-Lim / Kim, Moon-Deock / Kang, Tae-Won / Yang, Woo-Chul / Kim, Song-Gang et al. | 2015
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Influence of (7×7)–“1×1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)Fissel, Andreas / Roy Chaudhuri, Ayan / Krügener, Jan / Jörg Osten, H. et al. | 2015
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Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy systemMiyata, Yusuke / Nose, Yukinori / Yoshimura, Takeshi / Ashida, Atsushi / Fujimura, Norifumi et al. | 2015
- 162
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- 167
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- 172
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Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum wellTonkikh, A.A. / Zakharov, N.D. / Talalaev, V.G. / Eisenschmidt, C. / Schilling, J. / Werner, P. et al. | 2015
- 177
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Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(100) substrates with As capSeyedmohammadi, Shahram / DiNezza, Michael J. / Liu, Shi / King, Paul / LeBlanc, Elizabeth G. / Zhao, Xin-Hao / Campbell, Calli / Myers, Thomas H. / Zhang, Yong-Hong / Malik, Roger J. et al. | 2015
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-
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- 199
-
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-
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- 216
-
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-
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- 225
-
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-
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- 234
-
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-
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-
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-
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-
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-
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-
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Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wellsGanbold, T. / Antonelli, M. / Cautero, G. / Menk, R.H. / Cucini, R. / Biasiol, G. et al. | 2015
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- 360
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Editorial Board| 2015