LEED-AES study of sulfide single crystals (Englisch)
Nationallizenz
- Neue Suche nach: Taga, Y.
- Neue Suche nach: Isogai, A.
- Neue Suche nach: Nakajima, K.
- Neue Suche nach: Taga, Y.
- Neue Suche nach: Isogai, A.
- Neue Suche nach: Nakajima, K.
In:
Surface Science
;
86
;
591-600
;
1978
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:LEED-AES study of sulfide single crystals
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Beteiligte:
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Erschienen in:Surface Science ; 86 ; 591-600
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Verlag:
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Erscheinungsdatum:30.11.1978
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Format / Umfang:10 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 86
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- 1
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Problems and progress in describing quantitatively the development of thin film depositsRobins, J.L. et al. | 1978
- 14
-
Recent progress in the theory of thin film growthKashchiev, Dimo et al. | 1978
- 28
-
Theory for rotation and translation of islands on a substrateNishioka, K. et al. | 1978
- 36
-
Measurements of residence times of gold atoms on alkali halide surfaces using time of flight techniquesHarsdorff, M. / Knabbe, E.A. et al. | 1978
- 42
-
Depositing direction dependency of Fe on W tipSuzuki, T. / Shimizu, H. / Morikawa, H. / Yashiro, Y. et al. | 1978
- 46
-
The two-dimensional nucleation and growth of anodic oxide films on layered semiconductorsMoritani, A. / Kubo, H. / Nakai, J. et al. | 1978
- 54
-
A quantitative AES method for the study of a monolayer over-growth of thin filmTokutaka, H. / Nishimori, K. / Takashima, K. et al. | 1978
- 62
-
The structure of indium particles grown in ultra-high vacuum on potassium chloride substratesYanagihara, T. et al. | 1978
- 68
-
Diffusional alloying in polycrystalline AgAl thin film couples studied by means of Kiessig X-ray interferenceWagendristel, A. / Bangert, H. / Tonsern, W. et al. | 1978
- 75
-
Photoemission of thin and ultrathin films of calciumArmand, L. / Bouillot, J.L. / Gaudart, L. et al. | 1978
- 83
-
Field effect measurement on pure and CO covered ultra-thin nickel filmsFinzel, H.-U. / Wissmann, P. et al. | 1978
- 92
-
Present status and future directions for MBEJoyce, B.A. et al. | 1978
- 102
-
Si epitaxy by molecular beam methodSakamoto, Tsunenori / Takahashi, Tetsuo / Suzuki, Eiichi / Shoji, Akira / Kawanami, Hitoshi / Komiya, Yoshio / Tarui, Yasuo et al. | 1978
- 108
-
Kinetics of deposition of bismuth film by a molecular beam methodKawazu, A. / Saito, Y. / Ogiwara, N. / Otsuki, T. / Tominaga, G. et al. | 1978
- 120
-
Molecular beam epitaxy of indium-doped ZnSeYao, Takafumi / Sera, Tetsuya / Makita, Yunosuke / Maekawa, Shigeru et al. | 1978
- 126
-
High quality Si-doped GaAs layers grown by molecular beam epitaxyShimanoe, Takuji / Murotani, Toshio / Nakatani, Masaaki / Otsubo, Mutsuyuki / Mitsui, Shigeru et al. | 1978
- 137
-
Laser operation of heteroepitaxial InxGa1−xAs by molecular beam epitaxyHiyamizu, S. / Fujii, T. / Nanbu, K. / Maekawa, S. / Hisatsugu, T. et al. | 1978
- 144
-
Epitaxial interfaces between semiconductorsAleksandrov, L.N. et al. | 1978
- 161
-
Epitaxy of titanium oxide evaporated filmsYamada, Y. / Yoshida, K. et al. | 1978
- 167
-
Layer and spiral growth of CdTe epitaxial filmsLopez-Otero, A. / Huber, W. et al. | 1978
- 174
-
Surface study by an UHV electron microscopeYagi, K. / Takayanagi, K. / Kobayashi, K. / Osakabe, N. / Tanishiro, Y. / Honjo, G. et al. | 1978
- 182
-
Preferential epitaxy of evaporated thin films produced by charged particles on NaCl substratesShimaoka, G. et al. | 1978
- 189
-
Growth and surface coverage of Te films deposited on KBr irradiated by electronsNagashima, Seiichi / Ogura, Iwao et al. | 1978
- 196
-
Electron microscopy study of the structure of Cr films deposited on low temperature KCl substratesImura, Taizo / Ishihara, Nobukazu / Okada, Masakazu / Katoh, Masaru et al. | 1978
- 200
-
Microstructure study of thin films of hcp cadmiumHalder, N.C. / Pita, M. / Li, P.L. et al. | 1978
- 207
-
Ion beam techniques for thin and thick film depositionWeissmantel, C. / Erler, H.J. / Reisse, G. et al. | 1978
- 222
-
Shock crystallization in amorphous films of dielectricsAleksandrov, L.N. / Edelman, F.L. et al. | 1978
- 230
-
A new CVD technique for the preparation of transparent conducting filmsTabata, Osama / Tanaka, Toshimitsu / Waseda, Mitoshi / Kinuhara, Kazuo et al. | 1978
- 238
-
Low temperature deposition of a refractory aluminium compound by the thermal decomposition of aluminium dialkylamidesTakahashi, Yasutaka / Yamashita, Katsuji / Motojima, Seiji / Sugiyama, Kohzo et al. | 1978
- 246
-
Fast ion induced desorption and collective electronic perturbation at the surfaceKrueger, Franz R. et al. | 1978
- 257
-
Electrochemical properties of ion implanted steelOkabe, Yoshio / Iwaki, Masaya / Takahashi, Katsuo / Hayashi, Hisashi / Namba, Susumu / Yoshida, Kiyota et al. | 1978
- 264
-
A new technique for growth of thermal oxide films on GaAsTakagi, Hiromitsu / Kano, Gota / Teramoto, Iwao et al. | 1978
- 272
-
Passivation of GaAs surfaces by GaOxNy films and by multilayersShiota, Ikuo / Miyamoto, Nobuo / Nishizawa, Jun-ichi et al. | 1978
- 280
-
Characterization of undoped ZnSxSe1−x layer grown by vapor phase chemical transport by photoelectronic techniquesDe Murcia, M. / Etienne, D. / Pillard, J.P. et al. | 1978
- 290
-
Properties of ZnO films prepared by reactive ionized cluster beam depositionMatsubara, Kakuei / Yamada, Isao / Nagao, Nobuya / Tominaga, Kenji / Takagi, Toshinori et al. | 1978
- 300
-
Special features of thin compound films prepared by magnetron sputteringWasa, Kiyotaka / Hayakawa, Shigeru et al. | 1978
- 308
-
Structure and properties of transparent and hard carbon filmsBewilogua, K. / Dietrich, D. / Pagel, L. / Schürer, C. / Weissmantel, C. et al. | 1978
- 314
-
Ellipsometric and infrared spectroscopic studies of oxide film on GaAs surfaceUmeno, Masayoshi / Yoshimoto, Masahiko / Shimizu, Hideki / Amemiya, Yoshifumi et al. | 1978
- 322
-
Chemically sensitive devicesZemel, J.N. et al. | 1978
- 335
-
Interactions of tin oxide surface with O2, H2O AND H2Yamazoe, Noboru / Fuchigami, Jun / Kishikawa, Masato / Seiyama, Tetsuro et al. | 1978
- 345
-
Hydrogen-sensitive Schottky barrier diodesIto, Kentaro et al. | 1978
- 353
-
The complex impedance of superionic conductor cellMatsui, Noboru et al. | 1978
- 359
-
Study of gain fatigue mechanism in channel electron multipliersSakai, Y. / Mogami, A. et al. | 1978
- 369
-
Amorphous nature of vacuum-deposited BiSb alloy filmsInoue, Masasi / Urai, Naoki / Yagi, Hisao et al. | 1978
- 378
-
The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloysSoonckindt, L. / Etienne, D. / Marchand, J.P. / Lassabatere, L. et al. | 1978
- 384
-
Transparent electrode properties of CdSn oxide films by dc reactive sputteringMiyata, N. / Miyake, K. et al. | 1978
- 389
-
Optical properties of native oxide film anodically grown on PbSnTeJimbo, Takashi / Umeno, Masayoshi / Shimizu, Hideki / Amemiya, Yoshifumi et al. | 1978
- 398
-
Reflection of light from gas adsorbed thin metallic films and their electrical resistanceWatanabe, Masao / Hiratuka, Atuko et al. | 1978
- 406
-
Electro-reflectance in conducting thin filmsHowson, R.P. / Avaritsiotis, J.N. et al. | 1978
- 417
-
Striped optical filters composed of multi-layered TiO2 and SiO2 films deposited by RF sputteringShimomoto, Yasuharu / Imamura, Yoshinori / Sasano, Akira / Maruyama, Eiichi et al. | 1978
- 424
-
Thin films and solar energy applicationsLoferski, Joseph J. et al. | 1978
- 444
-
Present status of solar photovoltaic R&D projects in JapanHamakawa, Yoshihiro et al. | 1978
- 462
-
Surfaces for photoelectrochemical cellsHaneman, D. et al. | 1978
- 486
-
Glow discharge produced amorphous silicon solar cellsOkamoto, H. / Nitta, Y. / Adachi, T. / Hamakawa, Y. et al. | 1978
- 492
-
n-In2O3/p-InP solar cellsIto, Kentaro / Nakazawa, Tatsuo et al. | 1978
- 498
-
Growth and properties of vacuum deposited CdIn2S4 filmsHoriba, R. / Nakanishi, H. / Endo, S. / Irie, T. et al. | 1978
- 504
-
Recent progress in surface analysisPark, Robert L. et al. | 1978
- 516
-
Relaxation shifts, satellites and sum rules in electron spectroscopies of adsorbed atomsGadzuk, J.W. et al. | 1978
- 529
-
Band gap closure in insulator near metal-insulator interfaceOkiji, Ayao / Kasai, Hideaki et al. | 1978
- 535
-
Theory of the electronic origin of the surface reconstruction of the (001) surface of Mo and WTerakura, K. / Terakura, I. / Teraoka, Y. et al. | 1978
- 542
-
Oxygen incorporation in hexagonal and amorphous nickel filmsMatsueda, Hideaki / Averbach, B.L. et al. | 1978
- 549
-
Interatomic Auger transition spectroscopy as a probe for the study of O2 and CO adsorption on AlKatayama, Y. / Kobayashi, K.L.I. / Shiraki, Y. et al. | 1978
- 555
-
Studies of SiO2 and SiSiO2 interfaces by XPSHattori, Takeo / Nishina, Tatsushi et al. | 1978
- 562
-
Field ion microscopy of siliconSakurai, Toshio et al. | 1978
- 572
-
Simultaneous RHEED / AES study of Si film growth on Si(111) and sapphire (11̄02) surfacesNarusawa, T. / Shimizu, S. / Komiya, S. et al. | 1978
- 581
-
Surface structures of CuAu and CuPd alloys as observed by leedFujinaga, Yasuo et al. | 1978
- 587
-
A simple method of automatic LEED spot tracingKanaji, Toru / Nakatsuka, Harumi / Urano, Toshio / Taki, Yoichi et al. | 1978
- 591
-
LEED-AES study of sulfide single crystalsTaga, Y. / Isogai, A. / Nakajima, K. et al. | 1978
- 601
-
Differential composition profiles in depth of thin anodic oxide films on iron-chromium alloySeo, Masahiro / Sato, Norio et al. | 1978
- 610
-
Solid surface observation at very low accelerating voltage (200V–1kV) by scanning electron microscopeSoezima, Hiroyoshi et al. | 1978
- 620
-
Analysis of the electronic state of adsorbates on single crystals by angle-resolved photoelectron spectroscopyKambe, K. et al. | 1978
- 631
-
LaB6 and SmB6 (001) surfaces studied by angle-resolved XPS, LEED and ISSAono, M. / Nishitani, R. / Oshima, C. / Tanaka, T. / Bannai, E. / Kawai, S. et al. | 1978
- 638
-
Chemisorptive bonding on metal surfaces using photoelectron spectroscopyBrucker, Charles F. / Rhodin, Thor N. et al. | 1978
- 649
-
Investigation of silicon surfaces by optically stimulated electron spin resonanceShiota, Ikuo / Miyamoto, Nobuo / Nishizawa, Jun-ichi et al. | 1978
- 655
-
Zeeman energy transfer at the surface layer of P+ ion-implanted siliconMurakami, Kouichi / Namba, Susumu / Gamo, Kenji / Masuda, Kohzo et al. | 1978
- 665
-
Infrared study of surface phonon modes in ZnO, CdS and BeO small crystalsHayashi, S. / Nakamori, N. / Kanamori, H. / Yodogawa, Y. / Yamamoto, K. et al. | 1978
- 672
-
Physics of reconstructed silicon surfacesMönch, W. et al. | 1978
- 700
-
Chemisorption of H2O on the Si(111) 7 × 7 surfacesFujiwara, K. / Ogata, H. et al. | 1978
- 706
-
Dynamical observation of room temperature interfacial reaction in metal-semiconductor system by Auger electron spectroscopyHiraki, A. / Kim, S. / Kammura, W. / Iwami, M. et al. | 1978
- 711
-
Characterization of epitaxial metal silicide films grown on siliconIshiwara, Hiroshi / Hikosaka, Kohki / Nagatomo, Masao / Furukawa, Seijiro et al. | 1978
- 718
-
Field-ion and electron microscopies of carbon tipsFutamoto, Masaaki / Hosoki, Shigeyuki / Kawabe, Ushio et al. | 1978
- 723
-
Field emission characteristics of carbon tipsHosoki, S. / Yamamoto, S. / Futamoto, M. / Fukuhara, S. et al. | 1978
- 734
-
Stability of carbon field emission currentYamamoto, S. / Hosoki, S. / Fukuhara, S. / Futamoto, M. et al. | 1978
- 743
-
Thermally stimulated exo-electron emission of anodic Ta2O5 filmNanto, Hidehito / Kawanishi, Masaharu et al. | 1978
- 751
-
Thermally stimulated exo-electron emission in copper, zinc and their alloysShimada, Hisashi / Nakajima, Koichi et al. | 1978
- 760
-
Magnetic rearrangements near the surface in finite samplesLevy, J.C.S. et al. | 1978
- 763
-
The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)Spicer, W.E. / Chye, P.W. / Garner, C.M. / Lindau, I. / Pianetta, P. et al. | 1978
- 789
-
Electronic surface properties of cleaved GaP(110)Guichar, G.M. / Sébnne, C.A. / Thuault, C.D. et al. | 1978
- 794
-
Character of surface states at InSb surfacesKreutz, E.W. / Rickus, E. / Schroll, P. / Sotnik, N. et al. | 1979
- 803
-
Low-energy electron-loss spectroscopy of clean and oxidized surfaces of ZnSe, ZnTe and CdTeEbina, Atsuko / Asano, Kiyomitsu / Takahashi, Tadashi et al. | 1978
- 811
-
X-ray photoemission study of the initial oxidation of the cleaved (110) surfaces of GaAs, GaP and InSbIwasaki, Hiroshi / Mizokawa, Yusuke / Nishitani, Ryusuke / Nakamura, Shogo et al. | 1978
- 819
-
Interface-state band model for GaAs and GaP anodic MOS structuresHasegawa, H. / Sawada, T. / Sakai, T. et al. | 1978
- 826
-
Surface states in an n-GaAs/plasma grown native oxide — A modified deep level transient spectroscopy measurementYokoyama, Naoki / Mimura, Takashi / Fukuta, Masumi et al. | 1978
- 835
-
GaAs MOS structures with Al2O3 grown by molecular beam reactionYokoyama, S. / Yukitomo, K. / Hirose, M. / Osaka, Y. / Fischer, A. / Ploog, K. et al. | 1978
- 841
-
Electrical properties of interface between metal and III–V semiconductor under mechanical stressKusaka, M. / Okamura, M. / Hiraoka, N. / Hirai, M. / Okazaki, S. et al. | 1978
- 848
-
Contactless semiconductor surface characterization using surface acoustic wavesDas, P. / Webster, R.T. / Estrada-Vazqurz, H. / Wang, W.C. et al. | 1978
- 858
-
A study of dry etching-related contaminations on Si and SiOOshima, Masaharu et al. | 1978
- 866
-
Minority carrier lifetime in SiO2 sputter-coated siliconHara, Kunihiko / Usami, Akira / Suzuki, Kazou et al. | 1978
- 874
-
Semiconductor surface state spectroscopyGuichar, G.M. / Balkanski, M. / Sébenne, C.A. et al. | 1978
- 888
-
Preparation and activation of NEA GaP surfacesMiyao, Masahiro / Goto, Ryuji / Fujioka, Tokuya / Sukegawa, Tokuzo / Hagino, Minoru et al. | 1978
- 894
-
Oxygen adsorption on Cs covered GaAs(110) surfacesSu, C.Y. / Chye, P.W. / Pianetta, P. / Lindau, I. / Spicer, W.E. et al. | 1978
- 900
-
Author index| 1979
- 909
-
Subject index| 1979
- iv
-
Editorial Board| 1979
- ix
-
PrefaceUeda, Ryuzo et al. | 1979