Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition (Englisch)
- Neue Suche nach: Lin, Y.H.
- Neue Suche nach: Lin, K.Y.
- Neue Suche nach: Hsueh, W.J.
- Neue Suche nach: Young, L.B.
- Neue Suche nach: Chang, T.W.
- Neue Suche nach: Chyi, J.I.
- Neue Suche nach: Pi, T.W.
- Neue Suche nach: Kwo, J.
- Neue Suche nach: Hong, M.
- Neue Suche nach: Lin, Y.H.
- Neue Suche nach: Lin, K.Y.
- Neue Suche nach: Hsueh, W.J.
- Neue Suche nach: Young, L.B.
- Neue Suche nach: Chang, T.W.
- Neue Suche nach: Chyi, J.I.
- Neue Suche nach: Pi, T.W.
- Neue Suche nach: Kwo, J.
- Neue Suche nach: Hong, M.
In:
Journal of Crystal Growth
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477
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164-168
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2017
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Beteiligte:Lin, Y.H. ( Autor:in ) / Lin, K.Y. ( Autor:in ) / Hsueh, W.J. ( Autor:in ) / Young, L.B. ( Autor:in ) / Chang, T.W. ( Autor:in ) / Chyi, J.I. ( Autor:in ) / Pi, T.W. ( Autor:in ) / Kwo, J. ( Autor:in ) / Hong, M. ( Autor:in )
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Erschienen in:Journal of Crystal Growth ; 477 ; 164-168
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:01.01.2017
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 477
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- 25
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- 30
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- 164
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Conference Information| 2017
- IFC
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Editorial Board| 2017