Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment (Englisch)
- Neue Suche nach: Nyamhere, C.
- Neue Suche nach: Botha, J.R.
- Neue Suche nach: Venter, A.
- Neue Suche nach: Nyamhere, C.
- Neue Suche nach: Botha, J.R.
- Neue Suche nach: Venter, A.
In:
Physica B: Condensed Matter
;
406
, 11
;
2273-2276
;
2011
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment
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Beteiligte:
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Erschienen in:Physica B: Condensed Matter ; 406, 11 ; 2273-2276
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Verlag:
- Neue Suche nach: Elsevier B.V.
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Erscheinungsdatum:20.03.2011
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 406, Ausgabe 11
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- IFC
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Editorial Board| 2011